CEM9939 BVDSS, Normalized Drain-Source Breakdown Voltage 1.2 VDS=VGS ID=250 A 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 1.15 5 ID=250 A 1.10 1.05 1.00 0.95 0.90 0.85 -25 75 100 125 150 0 25 50 75 100 125 150 Tj, Junction Temperature ( C) Tj, Junction Temperature ( C) Figure 5. Gate Threshold Variation with Temperature Figure 6. Breakdown Voltage Variationwith Temperature 13.0 20.0 11.0 -ID, Drain Current (A) VGS, Gate to Source Voltage (V) Vth, Normalized Gate-Source Threshold Voltage N-Channel 9.0 7.0 5.0 VDS=15V 2.5 10.0 5.0 1.0 0 0 2 4 6 8 0 10 0.3 0.6 0.9 1.2 1.5 VDS, Body Diode Forward Voltage (V) IDS, Drain-Source Current (A) Figure 7. Transconductance Variation with Temperature 5-171 Figure 8. Body Diode Forward VoltageVariation with Source Current 1.15 1.10 ID=250£gA 1.05 1.00 0.95 0.90 0.85 -25 0 25 50 75 100 125 150