CEM11C2 Jul. 2002 Dual Enhancement Mode Field Effect Transistor ( N and P Channel) 5 FEATURES 30V ,7A , RDS(ON)=30m Ω @VGS=10V. RDS(ON)=42mΩ @VGS=4.5V. -20V , -4.3A , RDS(ON)=90m Ω @VGS=-4.5V. RDS(ON)=120mΩ @VGS=-2.5V. Super high dense cell design for extremely low RDS(ON). D1 D1 D2 D2 8 7 6 5 1 2 3 S1 G1 S2 High power and current handing capability. Surface Mount Package. SO-8 4 G2 1 ABSOLUTE MAXIMUM RATINGS (TA=25 C unless otherwise noted) Symbol Parameter N-Channel P-Channel Unit Drain-Source Voltage VDS 30 -20 V Gate-Source Voltage VGS Ć20 Ć8 V ID Ć7 Ć4.3 A IDM Ć 30 Ć17 A IS 2.3 -4.3 A a Drain Current-Continuous @TJ=125 C b -Pulsed Drain-Source Diode Forward Current a Maximum Power Dissipation a Operating Junction and Storage Temperature Range PD 2.0 TJ, TSTG -55 to 150 W C THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Ambient a RįJA 5-148 62.5 C/W CEM11C2 N-Channel ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) Parameter Condition Symbol Min Typ C Max Unit 5 OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS VGS = 0V,ID = 250µA Zero Gate Voltage Drain Current IDSS VDS = 30V, VGS = 0V Gate-Body Leakage IGSS VGS =Ć20V, VDS = 0V Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250µA Drain-Source On-State Resistance RDS(ON) 30 V 1 µA Ć100 nA 3 V ON CHARACTERISTICS b ID(ON) gFS On-State Drain Current Forward Transconductance 1 VGS = 10V, ID = 7A 24 30 mΩ VGS = 4.5V, ID = 3.5A 32 42 mΩ VDS = 5V, VGS = 10V VDS = 15V, ID =7A A 30 8 S 804 PF 328 PF 79 PF c DYNAMIC CHARACTERISTICS Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS VDS =15V, VGS = 0V f =1.0MHZ c SWITCHING CHARACTERISTICS Turn-On Delay Time Rise Time Turn-Off Delay Time tD(ON) tr tD(OFF) VDD = 25V, ID = 1A, VGS = 10V, RGEN = 6 Ω 16 24 ns 7 14 ns 47 60 ns Fall Time tf 10 15 ns Total Gate Charge Qg 20 24 nC Gate-Source Charge Qgs Gate-Drain Charge Qgd VDS =15V, ID = 2A, VGS =10V 5-149 3 nC 6 nC CEM11C2 P-Channel ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) Parameter 5 Condition Symbol Min Typ C Max Unit OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS VGS = 0V, ID = -250µA Zero Gate Voltage Drain Current IDSS VDS = -16V, VGS = 0V Gate-Body Leakage IGSS VGS = Ć8V, VDS = 0V Gate Threshold Voltage VGS(th) VDS = VGS, ID = -250µA Drain-Source On-State Resistance RDS(ON) -20 V -1 µA Ć100 nA ON CHARACTERISTICS b ID(ON) gFS On-State Drain Current Forward Transconductance -0.6 -1.5 V VGS = -4.5V,ID = -2.2A 50 90 mΩ VGS = -2.5V,ID = -1.8A 80 120 mΩ VDS = -5V, VGS = -4.5V VDS = -16V,ID = -2.2A -20 4 A 6 S c DYNAMIC CHARACTERISTICS Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS VDS =-15V, VGS = 0V f =1.0MHZ 1430 PF 800 PF 325 PF c SWITCHING CHARACTERISTICS Turn-On Delay Time Rise Time Turn-Off Delay Time tD(ON) tr tD(OFF) VDD = 10V, ID = -2.2A, VGEN = - 4.5V, RGEN = 6 Ω 20 28 ns 21 30 ns 76 106 ns Fall Time tf 56 78 ns Total Gate Charge Qg 19.4 25 nC Gate-Source Charge Qgs Gate-Drain Charge Qgd VDS =-6V, ID = -2.2A, VGS =-4.5V 5-150 3 nC 5 nC CEM11C2 ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) Parameter C Min Typ Max Unit Condition Symbol DRAIN-SOURCE DIODE CHARACTERISTICS b Diode Forward Voltage 5 0.76 1.1 -0.80 -1.0 VGS = 0V, Is = 2A N-Ch VGS = 0V, Is =-1.8A P-Ch VSD Notes a.Surface Mounted on FR4 Board, t ś10sec. b.Pulse Test:Pulse Width ś300ijs, Duty Cycle ś 2%. c.Guaranteed by design, not subject to production testing. 25 30 VGS=10,8,7,6,5V ID, Drain Current (A) 20 VGS=4V 24 ID, Drain Current (A) N-Channel 15 10 VGS=3V 5 0 0 0.5 1.0 1.5 2.0 2.5 12 Tj=125 C 3.0 -55 C 6 25 C 0 0.0 1.0 2.0 3.0 4.0 5.0 6.0 VDS, Drain-to-Source Voltage (V) VGS, Gate-to-Source Voltage (V) Figure 1. Output Characteristics Figure 2. Transfer Characteristics RDS (ON), On-Resistance (Ohms) 1800 1500 C, Capacitance (pF) 18 1200 900 Ciss 600 Coss 300 Crss 0.06 VGS=10V 0.05 Tj=125 C 0.04 25 C 0.03 -55 C 0.02 0.01 0 0 0 5 10 15 20 25 30 0 5 10 15 20 ID, Drain Current(A) VDS, Drain-to Source Voltage (V) Figure 3. Capacitance Figure 4. On-Resistance Variation with Drain Current and Temperature 5-151 V CEM11C2 BVDSS, Normalized Drain-Source Breakdown Voltage 1.09 VDS=VGS ID=250ijA 1.06 1.03 1.00 0.97 0.94 0.91 -50 -25 0 25 50 75 100 125 150 1.15 1.10 5 ID=-250ijA 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150 Tj, Junction Temperature ( C) Tj, Junction Temperature ( C) Figure 6. Breakdown Voltage Variation with Temperature Figure 5. Gate Threshold Variation with Temperature 30.0 15 VDS=15V -Is, Source-drain current (A) gFS, Transconductance (S) 5 Vth, Normalized Gate-Source Threshold Voltage N-Channel 12 9 6 3 10.0 1.0 0 0 5 10 15 20 0.4 IDS, Drain-Source Current (A) 0.6 0.8 1.0 1.2 1.4 VSD, Body Diode Forward Voltage (V) Figure 7. Transconductance Variation with Drain Current 5-152 Figure 8. Body Diode Forward Voltage Variation with Source Current CEM11C2 P-Channel 25 20 -ID, Drain Current (A) -ID, Drain Current (A) 20 3V 15 10 2V 5 16 Tj=125 C 12 8 4 0 0 0 2 4 6 8 10 0 12 -VDS, Drain-to-Source Voltage (V) RDS(ON), On-Resistance (Ohms) 2000 Ciss 1600 1200 Coss Crss 400 0 0 4 8 12 16 20 1 1.5 2 2.5 3 Figure 2. Transfer Characteristics 2400 800 0.5 -VGS, Gate-to-Source Voltage (V) Figure 1. Output Characteristics C, Capacitance (pF) 5 -55 C 25 C -VGS=5,4.5,4,3.5V 24 0.12 VGS=10V 0.10 Tj=125 C 0.08 0.06 25 C 0.04 -55 C 0.02 0.00 0 5 10 15 20 -VDS, Drain-to-Source Voltage (V) -ID, Drain Current (A) Figure 3. Capacitance Figure 4. On-Resistance Variation withDrain Current and Temperature 5-153 CEM11C2 P-Channel 1.6 VDS=VGS ID=-250ijA 1.4 1.2 1.0 0.8 0.6 0.4 -50 -25 0 25 50 75 100 125 150 BVDSS, Normalized Drain-Source Breakdown Voltage Vth, Normalized Gate-Source Threshold Voltage 5 1.15 ID=-250ijA 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 25 50 75 100 125 150 Tj, Junction Temperature ( C) Tj, Junction Temperature ( C) Figure 6. Breakdown Voltage Variation with Temperature Figure 5. Gate Threshold Variation with Temperature 15 30.0 VGS=0V -Is, Source-drain current (A) gFS, Transconductance (S) 0 12 9 6 3 VDS=-16V 1.0 0 0 4 8 12 10.0 16 -IDS, Drain-Source Current (A) 0.4 0.6 0.8 1.0 1.2 1.4 -VSD, Body Diode Forward Voltage (V) Figure 7. Transconductance Variation with Drain Current 5-154 Figure 8. Body Diode Forward Voltage Variation with Source Current CEM11C2 N-Channel 50 VDS=15V ID=2A 8 ID, Drain Current (A) VGS, Gate to Source Voltage (V) 10 6 4 2 10 RD S 0 3 6 9 12 15 18 (O L N) im 5 it 10m 100 s ms 1s DC 1 VGS=10V Single Pulse TA=25 C 0.1 0.03 0 0.1 21 24 1 Qg, Total Gate Charge (nC) 10 30 50 VDS, Drain-Source Voltage (V) Figure 10. Maximum Safe Operating Area Figure 9. Gate Charge P-Channel 5 50 VDS=-6V ID=-2.2A 4 -ID, Drain Current (A) VGS, Gate to Source Voltage (V) 5 3 2 1 0 10 R 3 6 9 12 15 18 21 24 ( Lim it 10 10 1s 0.1 0m ms s DC 1 0.03 0 DS ) ON VGS=-4.5V Single Pulse TA=25 C 0.1 1 10 20 50 Qg, Total Gate Charge (nC) -VDS, Drain-Source Voltage (V) Figure 9. Gate Charge Figure 10. Maximum Safe Operating Area 50 5-155 CEM11C2 VDD t on 5 RL V IN D td(off) 5 tf 90% 90% VOUT VOUT VGS RGEN toff tr td(on) 10% INVERTED 10% G 90% VIN S 50% 50% 10% PULSE WIDTH Figure 12. Switching Waveforms Figure 11. Switching Test Circuit r(t),Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle=0.5 0.2 PDM 0.1 0.1 t1 0.05 t2 1. RįJA (t)=r (t) * RįJA 2. RįJA=See Datasheet 3. TJM-TA = PDM* RįJA (t) 4. Duty Cycle, D=t1/t2 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (sec) Figure 13. Normalized Thermal Transient Impedance Curve 5-156 10 100