CET CEM11C2

CEM11C2
Jul. 2002
Dual Enhancement Mode Field Effect Transistor ( N and P Channel)
5
FEATURES
30V ,7A , RDS(ON)=30m Ω @VGS=10V.
RDS(ON)=42mΩ @VGS=4.5V.
-20V , -4.3A , RDS(ON)=90m Ω @VGS=-4.5V.
RDS(ON)=120mΩ @VGS=-2.5V.
Super high dense cell design for extremely low RDS(ON).
D1
D1
D2
D2
8
7
6
5
1
2
3
S1
G1 S2
High power and current handing capability.
Surface Mount Package.
SO-8
4
G2
1
ABSOLUTE MAXIMUM RATINGS (TA=25 C unless otherwise noted)
Symbol
Parameter
N-Channel P-Channel
Unit
Drain-Source Voltage
VDS
30
-20
V
Gate-Source Voltage
VGS
Ć20
Ć8
V
ID
Ć7
Ć4.3
A
IDM
Ć 30
Ć17
A
IS
2.3
-4.3
A
a
Drain Current-Continuous @TJ=125 C
b
-Pulsed
Drain-Source Diode Forward Current
a
Maximum Power Dissipation a
Operating Junction and Storage
Temperature Range
PD
2.0
TJ, TSTG
-55 to 150
W
C
THERMAL CHARACTERISTICS
Thermal Resistance, Junction-to-Ambient a
RįJA
5-148
62.5
C/W
CEM11C2
N-Channel ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted)
Parameter
Condition
Symbol
Min Typ C Max Unit
5
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS = 0V,ID = 250µA
Zero Gate Voltage Drain Current
IDSS
VDS = 30V, VGS = 0V
Gate-Body Leakage
IGSS
VGS =Ć20V, VDS = 0V
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = 250µA
Drain-Source On-State Resistance
RDS(ON)
30
V
1
µA
Ć100
nA
3
V
ON CHARACTERISTICS b
ID(ON)
gFS
On-State Drain Current
Forward Transconductance
1
VGS = 10V, ID = 7A
24
30
mΩ
VGS = 4.5V, ID = 3.5A
32
42
mΩ
VDS = 5V, VGS = 10V
VDS = 15V, ID =7A
A
30
8
S
804
PF
328
PF
79
PF
c
DYNAMIC CHARACTERISTICS
Input Capacitance
CISS
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
VDS =15V, VGS = 0V
f =1.0MHZ
c
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
tD(ON)
tr
tD(OFF)
VDD = 25V,
ID = 1A,
VGS = 10V,
RGEN = 6 Ω
16
24
ns
7
14
ns
47
60
ns
Fall Time
tf
10
15
ns
Total Gate Charge
Qg
20
24
nC
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
VDS =15V, ID = 2A,
VGS =10V
5-149
3
nC
6
nC
CEM11C2
P-Channel ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted)
Parameter
5
Condition
Symbol
Min Typ C Max Unit
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS = 0V, ID = -250µA
Zero Gate Voltage Drain Current
IDSS
VDS = -16V, VGS = 0V
Gate-Body Leakage
IGSS
VGS = Ć8V, VDS = 0V
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = -250µA
Drain-Source On-State Resistance
RDS(ON)
-20
V
-1
µA
Ć100 nA
ON CHARACTERISTICS b
ID(ON)
gFS
On-State Drain Current
Forward Transconductance
-0.6
-1.5
V
VGS = -4.5V,ID = -2.2A
50
90
mΩ
VGS = -2.5V,ID = -1.8A
80
120
mΩ
VDS = -5V, VGS = -4.5V
VDS = -16V,ID = -2.2A
-20
4
A
6
S
c
DYNAMIC CHARACTERISTICS
Input Capacitance
CISS
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
VDS =-15V, VGS = 0V
f =1.0MHZ
1430
PF
800
PF
325
PF
c
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
tD(ON)
tr
tD(OFF)
VDD = 10V,
ID = -2.2A,
VGEN = - 4.5V,
RGEN = 6 Ω
20
28
ns
21
30
ns
76
106
ns
Fall Time
tf
56
78
ns
Total Gate Charge
Qg
19.4
25
nC
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
VDS =-6V, ID = -2.2A,
VGS =-4.5V
5-150
3
nC
5
nC
CEM11C2
ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted)
Parameter
C
Min Typ Max Unit
Condition
Symbol
DRAIN-SOURCE DIODE CHARACTERISTICS b
Diode Forward Voltage
5
0.76 1.1
-0.80 -1.0
VGS = 0V, Is = 2A
N-Ch
VGS = 0V, Is =-1.8A P-Ch
VSD
Notes
a.Surface Mounted on FR4 Board, t ś10sec.
b.Pulse Test:Pulse Width ś300ijs, Duty Cycle ś 2%.
c.Guaranteed by design, not subject to production testing.
25
30
VGS=10,8,7,6,5V
ID, Drain Current (A)
20
VGS=4V
24
ID, Drain Current (A)
N-Channel
15
10
VGS=3V
5
0
0
0.5
1.0
1.5
2.0
2.5
12
Tj=125 C
3.0
-55 C
6
25 C
0
0.0
1.0
2.0
3.0
4.0
5.0
6.0
VDS, Drain-to-Source Voltage (V)
VGS, Gate-to-Source Voltage (V)
Figure 1. Output Characteristics
Figure 2. Transfer Characteristics
RDS (ON), On-Resistance (Ohms)
1800
1500
C, Capacitance (pF)
18
1200
900
Ciss
600
Coss
300
Crss
0.06
VGS=10V
0.05
Tj=125 C
0.04
25 C
0.03
-55 C
0.02
0.01
0
0
0
5
10
15
20
25
30
0
5
10
15
20
ID, Drain Current(A)
VDS, Drain-to Source Voltage (V)
Figure 3. Capacitance
Figure 4. On-Resistance Variation with
Drain Current and Temperature
5-151
V
CEM11C2
BVDSS, Normalized
Drain-Source Breakdown Voltage
1.09
VDS=VGS
ID=250ijA
1.06
1.03
1.00
0.97
0.94
0.91
-50 -25
0
25
50
75 100 125 150
1.15
1.10
5
ID=-250ijA
1.05
1.00
0.95
0.90
0.85
-50 -25
0
25
50
75 100 125 150
Tj, Junction Temperature ( C)
Tj, Junction Temperature ( C)
Figure 6. Breakdown Voltage Variation
with Temperature
Figure 5. Gate Threshold Variation
with Temperature
30.0
15
VDS=15V
-Is, Source-drain current (A)
gFS, Transconductance (S)
5
Vth, Normalized
Gate-Source Threshold Voltage
N-Channel
12
9
6
3
10.0
1.0
0
0
5
10
15
20
0.4
IDS, Drain-Source Current (A)
0.6
0.8
1.0
1.2
1.4
VSD, Body Diode Forward Voltage (V)
Figure 7. Transconductance Variation
with Drain Current
5-152
Figure 8. Body Diode Forward Voltage
Variation with Source Current
CEM11C2
P-Channel
25
20
-ID, Drain Current (A)
-ID, Drain Current (A)
20
3V
15
10
2V
5
16
Tj=125 C
12
8
4
0
0
0
2
4
6
8
10
0
12
-VDS, Drain-to-Source Voltage (V)
RDS(ON), On-Resistance (Ohms)
2000
Ciss
1600
1200
Coss
Crss
400
0
0
4
8
12
16
20
1
1.5
2
2.5
3
Figure 2. Transfer Characteristics
2400
800
0.5
-VGS, Gate-to-Source Voltage (V)
Figure 1. Output Characteristics
C, Capacitance (pF)
5
-55 C
25 C
-VGS=5,4.5,4,3.5V
24
0.12
VGS=10V
0.10
Tj=125 C
0.08
0.06
25 C
0.04
-55 C
0.02
0.00
0
5
10
15
20
-VDS, Drain-to-Source Voltage (V)
-ID, Drain Current (A)
Figure 3. Capacitance
Figure 4. On-Resistance Variation
withDrain Current and
Temperature
5-153
CEM11C2
P-Channel
1.6
VDS=VGS
ID=-250ijA
1.4
1.2
1.0
0.8
0.6
0.4
-50 -25
0
25
50
75 100 125 150
BVDSS, Normalized
Drain-Source Breakdown Voltage
Vth, Normalized
Gate-Source Threshold Voltage
5
1.15
ID=-250ijA
1.10
1.05
1.00
0.95
0.90
0.85
-50 -25
25
50
75 100 125 150
Tj, Junction Temperature ( C)
Tj, Junction Temperature ( C)
Figure 6. Breakdown Voltage Variation
with Temperature
Figure 5. Gate Threshold Variation
with Temperature
15
30.0
VGS=0V
-Is, Source-drain current (A)
gFS, Transconductance (S)
0
12
9
6
3
VDS=-16V
1.0
0
0
4
8
12
10.0
16
-IDS, Drain-Source Current (A)
0.4
0.6
0.8
1.0
1.2
1.4
-VSD, Body Diode Forward Voltage (V)
Figure 7. Transconductance Variation
with Drain Current
5-154
Figure 8. Body Diode Forward Voltage
Variation with Source Current
CEM11C2
N-Channel
50
VDS=15V
ID=2A
8
ID, Drain Current (A)
VGS, Gate to Source Voltage (V)
10
6
4
2
10
RD
S
0
3
6
9
12 15
18
(O
L
N)
im
5
it
10m
100
s
ms
1s
DC
1
VGS=10V
Single Pulse
TA=25 C
0.1
0.03
0
0.1
21 24
1
Qg, Total Gate Charge (nC)
10
30 50
VDS, Drain-Source Voltage (V)
Figure 10. Maximum Safe
Operating Area
Figure 9. Gate Charge
P-Channel
5
50
VDS=-6V
ID=-2.2A
4
-ID, Drain Current (A)
VGS, Gate to Source Voltage (V)
5
3
2
1
0
10
R
3
6
9
12
15 18
21
24
(
Lim
it
10
10
1s
0.1
0m
ms
s
DC
1
0.03
0
DS
)
ON
VGS=-4.5V
Single Pulse
TA=25 C
0.1
1
10 20
50
Qg, Total Gate Charge (nC)
-VDS, Drain-Source Voltage (V)
Figure 9. Gate Charge
Figure 10. Maximum Safe
Operating Area 50
5-155
CEM11C2
VDD
t on
5
RL
V IN
D
td(off)
5
tf
90%
90%
VOUT
VOUT
VGS
RGEN
toff
tr
td(on)
10%
INVERTED
10%
G
90%
VIN
S
50%
50%
10%
PULSE WIDTH
Figure 12. Switching Waveforms
Figure 11. Switching Test Circuit
r(t),Normalized Effective
Transient Thermal Impedance
2
1
Duty Cycle=0.5
0.2
PDM
0.1
0.1
t1
0.05
t2
1. RįJA (t)=r (t) * RįJA
2. RįJA=See Datasheet
3. TJM-TA = PDM* RįJA (t)
4. Duty Cycle, D=t1/t2
0.02
Single Pulse
0.01
10
-4
10
-3
10
-2
10
-1
1
Square Wave Pulse Duration (sec)
Figure 13. Normalized Thermal Transient Impedance Curve
5-156
10
100