STM8320 S a mHop Microelectronics C orp. Ver 1.0 Dual Enhancement Mode Field Effect Transistor ( N and P Channel ) PRODUCT SUMMARY (N-Channel) V DSS ID 30V 7.5A PRODUCT SUMMARY (P-Channel) R DS(ON) (m Ω) Max V DSS ID -30V -6.0A R DS(ON) (m Ω) Max 23 @ VGS=10V 35 @ VGS=-10V 35 @ VGS=4.5V 55 @ VGS=-4.5V S O-8 1 D2 5 4 G2 D2 6 3 S2 D1 7 2 G1 D1 8 1 S1 ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS Parameter Drain-Source Voltage Gate-Source Voltage ID Drain Current-Continuous IDM -Pulsed TA=25°C TA=70°C a b EAS Single Pulse Avalanche Energy PD Maximum Power Dissipation TJ, TSTG Operating Junction and Storage Temperature Range a d N-Channel 30 P-Channel -30 Units V ±20 ±20 V 7.5 -6.0 6.0 -4.8 A A 27 -22 A 10 18 mJ TA=25°C 2 TA=70°C 1.28 THERMAL CHARACTERISTICS R JA Thermal Resistance, Junction-to-Ambient a Details are subject to change without notice. W -55 to 150 °C 62.5 °C/W Sep,17,2008 1 www.samhop.com.tw STM8320 Ver 1.0 N-Channel ELECTRICAL CHARACTERISTICS ( T A=25 °C unless otherwise noted ) Symbol Parameter OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS Zero Gate Voltage Drain Current IDSS Gate-Body Leakage Current IGSS ON CHARACTERISTICS Gate Threshold Voltage VGS(th) RDS(ON) Drain-Source On-State Resistance gFS Forward Transconductance Conditions Min VGS=0V , ID=250uA 30 Typ Units 1 ±10 uA V VDS=24V , VGS=0V VGS= ±20V , VDS=0V uA 1.8 3 18 23 V m ohm VGS=4.5V , ID=6.5A 26 35 m ohm VDS=10V , ID=4.0A 14 S VDS=15V,VGS=0V f=1.0MHz 420 130 78 pF pF pF 8 ns ns VDS=15V,ID=7.5A,VGS=4.5V 11 40 15 7.9 4.3 nC nC VDS=15V,ID=7.5A, VGS=10V 1.2 2.5 nC nC VDS=VGS , ID=250uA VGS=10V , ID=7.5A 1 Max c DYNAMIC CHARACTERISTICS Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING CHARACTERISTICS Turn-On Delay Time tD(ON) tr Rise Time tD(OFF) Turn-Off Delay Time tf Fall Time Qg Total Gate Charge Qgs Qgd Gate-Source Charge c VDD=15V ID=1A VGS=10V RGEN=6 ohm VDS=15V,ID=7.5A,VGS=10V Gate-Drain Charge DRAIN-SOURCE DIODE CHARACTERISTICS Maximum Continuous Drain-Source Diode Forward Current IS VSD Diode Forward Voltage b VGS=0V,IS=1.3A 0.78 ns ns 1.3 A 1.3 V Sep,17,2008 2 www.samhop.com.tw STM8320 Ver 1.0 P-Channel ELECTRICAL CHARACTERISTICS ( T A=25 °C unless otherwise noted ) Symbol Parameter OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS Zero Gate Voltage Drain Current IDSS Gate-Body Leakage Current IGSS ON CHARACTERISTICS Gate Threshold Voltage VGS(th) RDS(ON) Drain-Source On-State Resistance gFS Forward Transconductance DYNAMIC CHARACTERISTICS CISS COSS CRSS SWITCHING CHARACTERISTICS tD(ON) Turn-On Delay Time tr Rise Time tD(OFF) Turn-Off Delay Time tf Fall Time Total Gate Charge Qgs Qgd Gate-Source Charge Gate-Drain Charge Min VGS=0V , ID=-250uA -30 Typ VGS= ±20V , VDS=0V Diode Forward Voltage -1 ±10 uA uA -1.8 -3.0 28 35 V m ohm VGS=-4.5V , ID=-4.8A 42 55 m ohm VDS=-10V , ID=-3.0A 8.5 S VDS=-15V,VGS=0V f=1.0MHz 860 225 135 pF pF pF 15 18 63 15 ns ns ns ns VDS=-15V,ID=-6.0A,VGS=-10V 16.8 nC VDS=-15V,ID=-6.0A,VGS=-4.5V 8.5 1.7 3.5 nC VDS=VGS , ID=-250uA VGS=-10V , ID=-6.0A c VDD=-15V ID=-1A VGS=-10V RGEN=6 ohm VDS=-15V,ID=-6.0A, VGS=-10V DRAIN-SOURCE DIODE CHARACTERISTICS Maximum Continuous Drain-Source Diode Forward Current IS VSD Units V VDS=-24V , VGS=0V -1.0 Max c Input Capacitance Output Capacitance Reverse Transfer Capacitance Qg Conditions b VGS=0V,IS=-1.2A -0.76 nC nC -1.2 A -1.2 V Notes _ 10sec. a.Surface Mounted on FR4 Board,t < _ 2%. _ b.Pulse Test:Pulse Width < 300us, Duty Cycle < c.Guaranteed by design, not subject to production testing. d.Starting TJ=25°C,VDD = 20V,VGS=10V,L=0.5mH. Sep,17,2008 3 www.samhop.com.tw STM8320 Ver 1.0 N-Channel 35 20 VGS=10V VGS=4.5V VGS=5V VGS=4V I D, Drain Current(A) I D, Drain Current(A) 28 21 VGS=3.5V 14 7 VGS=3V 0 16 12 8 4 25 C 0 0 0.5 1 1.5 2 2.5 3 0 V DS, Drain-to-Source Voltage(V) 50 1.5 R DS(on), On-Resistance Normalized RDS(on)(m Ω) 1.6 40 VGS=4.5V 20 VGS=10V 10 1 7 14 21 28 2.1 2.8 3.5 4.2 V G S =10V I D =7.5A 1.4 1.3 1.2 V G S =4.5V I D =6.5A 1.1 0.0 35 0 75 50 25 100 125 150 T j ( °C ) ID, Drain Current(A) Tj, Junction Temperature(° C ) Figure 3. On-Resistance vs. Drain Current and Gate Voltage Figure 4. On-Resistance Variation with Drain Current and Temperature BVDSS, Normalized Drain-Source Breakdown Voltage 1.3 Vth, Normalized Gate-Source Threshold Voltage 1.4 Figure 2. Transfer Characteristics 60 30 0.7 VGS, Gate-to-Source Voltage(V) Figure 1. Output Characteristics 1 -55 C Tj=125 C VDS=VGS ID=250uA 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 Tj, Junction Temperature( ° C ) 1.15 ID=250uA 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150 Tj, Junction Temperature(° C ) Figure 5. Gate Threshold Variation with Temperature Figure 6. Breakdown Voltage Variation with Temperature Sep,17,2008 4 www.samhop.com.tw STM8320 Ver 1.0 60 20.0 Is, Source-drain current(A) ID=7.5A RDS(on)(m Ω) 50 40 75 C 125 C 30 20 25 C 10 0 0 2 4 6 8 0.4 0.6 0.8 1.0 1.2 1.4 V SD, Body Diode Forward Voltage(V) Figure 7. On-Resistance vs. Gate-Source Voltage Figure 8. Body Diode Forward Voltage Variation with Source Current 10 V GS, Gate to Source Voltage(V) C, Capacitance(pF) 75 C 125 C V GS, Gate-to-Source Voltage(V) 500 Ciss 400 300 200 Coss 100 Crss 0 0 5 10 15 20 25 VDS=15V ID=7.5A 8 6 4 2 0 30 0 1 3 2 4 5 6 7 8 V DS, Drain-to-Source Voltage(V) Qg, Total Gate Charge(nC) Figure 9. Capacitance Figure 10. Gate Charge 600 9 80 100 60 I D, Drain Current(A) Switching Time(ns) 25 C 1.0 10 600 Tr TD(off ) TD(on) Tf 10 VDS=15V,ID=1A VGS=10V 1 10.0 1 6 10 60 100 10 Rg, Gate Resistance(Ω) S ( L im it 10 1m 10 0u s s ms DC 1 0.1 0.05 300 600 RD ) ON V G S =10V S ingle P ulse T c=25 C 0.1 1 10 100 V DS, Drain-Source Voltage(V) Figure 11. switching characteristics Figure 12. Maximum Safe Operating Area Sep,17,2008 5 www.samhop.com.tw STM8320 Ver 1.0 V(B R )DS S 15V tp DR IV E R L VDS D .U .T RG + - VD D IA S A 20V tp 0.0 1 IAS Unclamped Inductive Test Circuit Unclamped Inductive Waveforms Figure 13a. Figure 13b. Normalized Transient Thermal Resistance 10 1 0.5 0.2 0.1 0.1 P DM 0.05 t1 t2 0.02 0.01 0.00001 1. 2. 3. 4. Single Pulse 0.01 0.0001 0.001 0.01 0.1 1 10 R įJ A (t)=r (t) * R įJ A R įJ A =S ee Datas heet T J M-T A = P DM* R įJ A (t) Duty C ycle, D=t1/t2 100 1000 Square Wave Pulse Duration(sec) Normalized Thermal Transient Impedance Curve Sep,17,2008 6 www.samhop.com.tw STM8320 Ver 1.0 P-Channel 20 VGS=10V VGS=5V 125 C VGS=4V I D, Drain Current(A) 16 I D, Drain Current(A) 20 VGS=4.5V 12 VGS=3.5V 8 VGS=3V 4 16 12 25 C 8 -55 C 4 0 0 0 0.5 1 1.5 2 2.5 0 3 V DS, Drain-to-Source Voltage(V) 75 1.4 R DS(on), On-Resistance Normalized RDS(on)(m Ω) 1.5 60 VGS=-4.5V 45 30 VGS=-10V 15 4 8 12 16 2.7 3.6 4.5 5.4 Figure 2. Transfer Characteristics 90 1 1.8 VGS, Gate-to-Source Voltage(V) Figure 1. Output Characteristics 1 0.9 1.2 VGS=-4.5V ID=-4.8A 1.1 1.0 0.9 20 VGS=-10V ID=-6.0A 1.3 0 50 25 75 100 125 150 T j ( °C ) ID, Drain Current(A) Tj, Junction Temperature(° C ) Figure 3. On-Resistance vs. Drain Current and Gate Voltage Figure 4. On-Resistance Variation with Drain Current and Temperature BVDSS, Normalized Drain-Source Breakdown Voltage Vth, Normalized Gate-Source Threshold Voltage 1.2 VDS=VGS ID=-250uA 1.1 1.0 0.9 0.8 0.7 0.6 0.5 -50 -25 0 25 50 75 100 125 150 Tj, Junction Temperature( ° C ) 1.3 ID=-250uA 1.2 1.1 1.0 0.9 0.8 0.7 -50 -25 0 25 50 75 100 125 150 Tj, Junction Temperature(° C ) Figure 5. Gate Threshold Variation with Temperature Figure 6. Breakdown Voltage Variation with Temperature Sep,17,2008 7 www.samhop.com.tw STM8320 Ver 1.0 100 20.0 Is, Source-drain current(A) I D =-6.0A R DS(on)(m Ω) 90 80 60 125 C 40 0 25 C 75 C 20 125 C 4 8 6 75 C 0 10 0.25 0.5 0.75 1.0 1.25 V GS, Gate-to-Source Voltage(V) V SD, Body Diode Forward Voltage(V) Figure 7. On-Resistance vs. Gate-Source Voltage Figure 8. Body Diode Forward Voltage Variation with Source Current 10 V GS, Gate to Source Voltage(V) 1000 Ciss 800 600 400 Coss 200 Crss 0 0 5 10 15 20 25 V DS =-15V I D =-6.0A 8 6 4 2 0 30 0 6 3 9 15 12 18 21 V DS, Drain-to-Source Voltage(V) Qg, Total Gate Charge(nC) Figure 9. Capacitance Figure 10. Gate Charge 250 24 80 100 60 I D, Drain Current(A) Tr Switching Time(ns) 25 C 1.0 2 0 1200 C, Capacitance(pF) 10.0 TD(off) Tf TD(on) 10 V DS =-15V,I D =-6.0A 1 6 10 RD 60 100 300 600 Rg, Gate Resistance(Ω) S ( L im it 10 10 1 0.1 0.05 V GS =-10V 1 10 ) ON 1m 0u s s ms DC V G S =10V S ingle P ulse T c=25 C 0.1 1 10 100 V DS, Drain-Source Voltage(V) Figure 12. Maximum Safe Operating Area Figure 11. switching characteristics Sep,17,2008 8 www.samhop.com.tw STM8320 Ver 1.0 V(B R )DS S 15V tp DR IV E R L VDS D .U .T RG + - VD D IA S A 20V tp 0.0 1 IAS Unclamped Inductive Test Circuit Unclamped Inductive Waveforms Figure 13a. Figure 13b. Normalized Transient Thermal Resistance 10 0.5 1 0.2 0.1 P DM 0.05 0.1 t1 t2 0.02 1. RthJA (t)=r (t) * R th JA 2. R thJA=See Datasheet 3. TJM-TA = PDM* R thJA (t) 4. Duty Cycle, D=t1/t2 0.01 Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 Square Wave Pulse Duration(sec) Normalized Thermal Transient Impedance Curve 10 100 1000 Sep,17,2008 9 www.samhop.com.tw STM8320 Ver 1.0 PACKAGE OUTLINE DIMENSIONS SO-8 1 L E D A C 0.015X45± B A1 e 0.008 TYP. 0.016 TYP. 0.05 TYP. H MILLIME T E R S INC HE S S Y MB OLS MIN A A1 D E H L 1.35 0.10 4.80 3.81 5.79 0.41 0± MAX 1.75 0.25 4.98 3.99 6.20 1.27 8± MIN 0.053 0.004 0.189 0.150 0.228 0.016 0± MAX 0.069 0.010 0.196 0.157 0.244 0.050 8± Sep,17,2008 10 www.samhop.com.tw STM8320 Ver 1.0 SO-8 Tape and Reel Data SO-8 Carrier Tape P1 D1 P2 B0 E E2 E1 A A0 A P0 D0 TERMINAL NUMBER 1 T SECTION A-A K0 FEEDING DIRECTION unit:р PACKAGE A0 SOP 8N 150п 6.50 ²0.15 B0 K0 D0 D1 E 5.25 ²0.10 2.10 ²0.10 ӿ1.5 (MIN) ӿ1.55 ²0.10 12.0 +0.3 - 0.1 E1 1.75 ²0.10 E2 P0 P1 P2 T 5.5 ²0.10 8.0 ²0.10 4.0 ²0.10 2.0 ²0.10 0.30 ²0.013 SO-8 Reel W1 S K V M N G R H W UNIT:р TAPE SIZE 12 р REEL SIZE M N W W1 H ӿ330 330 ² 1 62 ²1.5 12.4 + 0.2 16.8 - 0.4 ӿ12.75 + 0.15 K S G R V 2.0 ²0.15 Sep,17,2008 11 www.samhop.com.tw