CEM4532 Jan. 2003 Dual Enhancement Mode Field Effect Transistor ( N and P Channel) FEATURES 5 30V , 4.7A , RDS(ON)=55m Ω @VGS=10V. RDS(ON)=85mΩ @VGS=4.5V. -30V , -4.5A , RDS(ON)=80m Ω @VGS=-10V. RDS(ON)=135m Ω @VGS=-4.5V. Super high dense cell design for extremely low RDS(ON). D1 D1 D2 D2 8 7 6 5 1 2 3 S1 G1 S2 High power and current handing capability. Surface Mount Package. SO-8 4 G2 1 ABSOLUTE MAXIMUM RATINGS (TA=25 C unless otherwise noted) Parameter Symbol N-Channel P-Channel Unit Drain-Source Voltage VDS 30 -30 V Gate-Source Voltage VGS Ć20 Ć20 V Drain Current-Continuous a -Pulsed ID Ć4.7 Ć4.5 A IDM Ć20 Ć20 A Drain-Source Diode Forward Current a IS 1.7 -1.7 A Maximum Power Dissipation a PD 2.0 TJ, TSTG -55 to 150 Operating Junction and Storage Temperature Range W C THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Ambient a RįJA 5-7 62.5 C/W CEM4532 N-Channel ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) Parameter 5 Symbol Condition Drain-Source Breakdown Voltage BVDSS VGS = 0V, ID = 250µA Zero Gate Voltage Drain Current IDSS VDS = 30V, VGS = 0V Gate-Body Leakage IGSS VGS = Ć20V, VDS = 0V Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250µA Drain-Source On-State Resistance RDS(ON) Min Typ C Max Unit OFF CHARACTERISTICS 30 V 1 µA Ć100 nA 3 V ON CHARACTERISTICS b ID(ON) gFS On-State Drain Current Forward Transconductance 1 VGS = 10V, ID = 4.7A 40 55 mΩ VGS = 4.5V, ID = 3.7A 70 85 mΩ VDS = 5V, VGS = 10V VDS = 15V, ID = 4.7A A 15 5 S 357 PF 190 PF 60 PF c DYNAMIC CHARACTERISTICS Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS VDS =15V, VGS = 0V f =1.0MHZ c SWITCHING CHARACTERISTICS Turn-On Delay Time Rise Time Turn-Off Delay Time tD(ON) tr tD(OFF) VDD = 15V, ID = 1A, VGS = 10V, RGEN = 6 Ω 15 30 ns 18 40 ns 30 60 ns Fall Time tf 5 15 ns Total Gate Charge Qg 10.4 15 nC Gate-Source Charge Qgs Gate-Drain Charge Qgd VDS =15V, ID = 4.7A, VGS =10V 5-8 2.3 nC 2.8 nC CEM4532 P-Channel ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) Parameter Condition Symbol Min Typ C Max Unit 5 OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS VGS = 0V, ID = 250µA Zero Gate Voltage Drain Current IDSS VDS = -30V, VGS = 0V -1 µA Gate-Body Leakage IGSS VGS =Ć20V, VDS = 0V Ć100 nA Gate Threshold Voltage VGS(th) VDS = VGS, ID = -250µA -3 V Drain-Source On-State Resistance RDS(ON) -30 V ON CHARACTERISTICS b ID(ON) gFS On-State Drain Current Forward Transconductance -1 VGS = -10V, ID = -4.5A 60 80 mΩ VGS = -4.5V, ID = -3.6A 105 135 mΩ VDS = -5V, VGS = -10V VDS = -15V, ID = -4.5A A -15 5.8 S 448 PF 317 PF 308 PF c DYNAMIC CHARACTERISTICS Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS VDS =-15V, VGS = 0V f =1.0MHZ c SWITCHING CHARACTERISTICS Turn-On Delay Time Rise Time Turn-Off Delay Time tD(ON) tr tD(OFF) VDD = -15V, ID = -1A, VGEN = -10V, RGEN = 6 Ω 19 45 ns 19 45 ns 38 75 ns Fall Time tf 48 95 ns Total Gate Charge Qg 18 23 nC Gate-Source Charge Qgs Gate-Drain Charge Qgd VDS =-15V, ID = -4.5A, VGS =-10V 5-9 3 nC 4.5 nC CEM4532 ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) Parameter DRAIN-SOURCE DIODE CHARACTERISTICS b Diode Forward Voltage VGS = 0V, Is = 1.7A N-Ch VGS = 0V, Is =-1.7A P-Ch VSD 0.8 -0.8 1.2 -1.2 Notes a.Surface Mounted on FR4 Board, t ś10sec. b.Pulse Test:Pulse Width ś300ijs, Duty Cycle ś 2%. c.Guaranteed by design, not subject to production testing. N-Channel 20 20 VGS=10,9,8,7,6V VGS=5V 25 C 16 VGS=4V ID, Drain Current (A) ID, Drain Current (A) 16 12 8 VGS=3V 4 0 12 8 -55 C 4 Tj=125 C 0 0 0.5 1.0 1.5 2.0 2.5 1 3.0 4 3 2 5 VDS, Drain-to-Source Voltage (V) VGS, Gate-to-Source Voltage (V) Figure 1. Output Characteristics Figure 2. Transfer Characteristics 1.80 RDS(ON), Normalized RDS(ON), On-Resistance(Ohms) 600 500 C, Capacitance (pF) 5 C Min Typ Max Unit Condition Symbol 400 Ciss 300 Coss 200 100 Crss 0 0 5 10 15 20 25 30 1.60 ID=4.7A VGS=10V 1.40 1.20 1.00 0.80 0.60 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature( C) VDS, Drain-to Source Voltage (V) Figure 4. On-Resistance Variation with Temperature Figure 3. Capacitance 5-10 V 1.30 VDS=VGS ID=250ijA 1.20 1.10 1.00 0.90 0.80 0.70 0.60 -50 -25 0 25 50 75 100 125 150 BVDSS, Normalized Drain-Source Breakdown Voltage Vth, Normalized Gate-Source Threshold Voltage CEM4532 1.15 ID=250ijA 1.10 1.05 1.00 5 0.95 0.90 0.85 -50 -25 25 50 75 100 125 150 Tj, Junction Temperature ( C) Tj, Junction Temperature ( C) Figure 6. Breakdown Voltage Variation with Temperature Figure 5. Gate Threshold Variation with Temperature 20 20 10 16 Is, Source-drain current (A) gFS, Transconductance (S) 0 12 8 4 VDS=15V VGS=0V 1 0.1 0 0 5 10 15 20 0.4 IDS, Drain-Source Current (A) 0.6 1.2 1.0 0.8 VSD, Body Diode Forward Voltage (V) Figure 7. Transconductance Variation with Drain Current Figure 8. Body Diode Forward Voltage Variation with Source Current VDS=15V ID=4.7A 8 ID, Drain Current (A) VGS, Gate to Source Voltage (V) 10 6 4 2 10 1 RD 10 -1 10 0 3 6 9 12 Qg, Total Gate Charge (nC) ON )L im it 1m 10 10 1s 10 0 -2 0 S( 10 DC 0m s ms s s TA=25 C Tj=150 C Single Pulse 10 -1 10 1 10 0 10 VDS, Drain-Source Voltage (V) Figure 10. Maximum Safe Operating Area Figure 9. Gate Charge 5-11 1 CEM4532 P-Channel 20 20 25 C -VGS=10 thru 5V -ID, Drain Current (A) 16 12 -VGS=4V 8 4 -VGS=3V 12 8 -55 C 4 0 1 2 3 4 5 0 6 6 4 2 8 -VDS, Drain-to-Source Voltage (V) -VGS, Gate-to-Source Voltage (V) Figure 11. Output Characteristics Figure 12. Transfer Characteristics 1.80 RDS(ON), On-Resistance(Ohms) 600 500 Ciss C, Capacitance (pF) Tj=125 C 0 0 400 Coss 300 Crss 200 100 0 0 5 10 15 20 25 30 1.60 ID=-4.5A VGS=-10V 1.40 1.20 1.00 0.80 0.60 -50 -25 -VDS, Drain-to Source Voltage (V) VDS=VGS ID=-250ijA 1.20 1.10 1.00 0.90 0.80 0.70 0.60 -50 -25 0 25 50 75 100 125 150 Tj, Junction Temperature ( C) Figure 15. Gate Threshold Variation with Temperature 5-12 25 50 75 100 125 150 Figure 14. On-Resistance Variation with Temperature BVDSS, Normalized Drain-Source Breakdown Voltage 1.30 0 TJ, Junction Temperature( C) Figure 13. Capacitance Vth, Normalized Gate-Source Threshold Voltage 5 -ID, Drain Current (A) 16 1.15 ID=-250ijA 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150 Tj, Junction Temperature ( C) Figure 16. Breakdown Voltage Variation with Temperature CEM4532 P-Channel 16 -Is, Source-drain current (A) gFS, Transconductance (S) 20 12 8 4 VDS=-15V 1.15 20 10 VGS=0V 1.10 ID=250ijA 5 1.05 1.00 1 0.95 0.90 0.1 0.85 0 0 5 10 15 0.4 -25 20 00.6 25 50 1.2 1.0 125 150 0.8 75 100 -VSD, Body Diode Forward Voltage (V) -IDS, Drain-Source Current (A) Figure 18. Body Diode Forward Voltage Variation with Source Current Figure 17. Transconductance Variation with Drain Current VDS=-15V ID=-4.5A 8 -ID, Drain Current (A) VGS, Gate to Source Voltage (V) 10 6 4 2 10 1 RD 10 0 5 10 15 20 Lim 1m it 10 10 10 DC 10 -1 10 N) 0 -2 0 O S( 1s 0m m s s s s TA=25 C Tj=150 C Single Pulse 10 -1 10 1 10 0 -VDS, Drain-Source Voltage (V) Qg, Total Gate Charge (nC) Figure 20. Maximum Safe Operating Area Figure 19. Gate Charge 5-13 10 1 CEM4532 VDD t on 5 V IN D td(off) tf 90% 90% VOUT VOUT VGS RGEN toff tr td(on) RL 10% INVERTED 10% G 90% VIN S 50% 50% 10% PULSE WIDTH Figure 22. Switching Waveforms Figure 21. Switching Test Circuit r(t),Normalized Effective Transient Thermal Impedance 102 0 D=0.5 1 Duty Cycle=0.5 0.2 10 -1 0.1 0.2 0.05 10 PDM 0.1 0.02 0.1 -2 t1 t2 t2 1. RįJA (t)=r * R(t)=r įJA (t) * RįJA 1. (t) RįJA 2. RįJA=See Datasheet 2. R įJA=See Datasheet RįJA (t)PDM* RįJA (t) 3. TJM-TA =3.P*TJMTA = 4. Duty Cycle, D=t1/t2 4. Duty Cycle, D=t1/t2 0.02 Pulse Single Single Pulse 0.01 10 PDM t1 0.05 0.01 -3 -4 10 -3-3 10 10 -2 -2 10 10 10 -1 10 -1 10 0 1 10 1 Square Wave Pulse Duration (sec) Figure 13. 23. Normalized Thermal Transient Impedance Curve 5-14 10 10 2 100