CE 1N4151 CHENYI ELECTRONICS SMALL SIGNAL SWITCHING DIODE FEATURES . Silicon epitaxial planar diode . Fast swithching diodes . 500mW power dissipation . The diode is also available in the Mini-MELF case with the type designation LL4151 MECHANICAL DATA . Case: DO-35 glass case . Polarity: Color brand denotes cathode end . Weight: Approx. 0.13gram Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (Ratings at 25 ambient temperature unless otherwise specified) Symbol Reverse voltage Units Value VR 50 Volts Peak reverse voltage VRM 75 Volts Average rectified current, Half wave rectification with IAV 1501) mA Resistive load at TA=25 and F 50Hz Surge forward current at t<1S and TJ=25 IFSM 500 Ma Power dissipation at TA=25 Ptot 5001) Mw TJ 175 TSTG -65 to + 175 Junction temperature Storage temperature range 1)Valid provided that at a distance of 8mm from case are kept at ambient temperature(DO-35) ELECTRICAL CHARACTERISTICS (Ratings at 25 ambient temperature unless otherwise specified) Symbols Forward voltage Leakage current at VR=50V at VR=20V, TJ=150 Junction capacitance at VR=VF=0V Max. Units VF 1 Volts IR 50 nA IR 50 A 2 pF trr 4 ns trr 4.000 ns 3501) K/W CJ Reverse breakdown voltage tested with 5 A pulse from IF=10mA to IR=1mA to IR=1mA, VR=6V.RL=100 Rectification efficience at f=100MHz,VRF=2V Typ. 75 V(BR)R Reverse recovery time from IF=10mA to IR=10mA to IR=1mA, Thermal resistance junction to ambient Min. R JA 0.45 1)Valid provided that leads at a distance of 8mm from case are kept at ambient temperature(DO-35) Copyright @ 2000 SHANGHAI CHENYI ELECTRONICS CO.,LTD Page 1 of 3 CE 1N4151 CHENYI ELECTRONICS SMALL SIGNAL SWITCHING DIODE RATINGS AND CHATACTERISTIC CURVES 1N4151 FIG.2-DYNAMIC FORWARD RESISTANCE FLG.1-FORWARD CHARACTERISTICS FIG.3-ADMISSIBLE POWER DISSIPATION VERSUS AMBIENT TEMPERATURE VERSUS FORWARD CURRENT FIG.4-RELATIVE CAPACITANCE VERSUS VOLTAGE Copyright @ 2000 SHANGHAI CHENYI ELECTRONICS CO.,LTD Page 2 of 3 CE 1N4151 CHENYI ELECTRONICS FIG.5-RECTIFICATION EFFICIENCY MEASUREMENT CIRCUIT SMALL SIGNAL SWITCHING DIODE FIG.6-LEAKAGE CURRENT VERSUS JUNCTION TEMPERATURE FIG.7-ADMISSIBLE REPETITIVE PEAK FORWARD CURRENT VERSUS PULSE DURATION Copyright @ 2000 SHANGHAI CHENYI ELECTRONICS CO.,LTD Page 3 of 3