2N4402, 2N4403 PNP General Purpose Transistors Si-Epitaxial PlanarTransistors PNP Version 2004-01-20 Power dissipation – Verlustleistung 625 mW Plastic case Kunststoffgehäuse TO-92 (10D3) Weight approx. – Gewicht ca. 0.18 g Plastic material has UL classification 94V-0 Gehäusematerial UL94V-0 klassifiziert Standard Pinning 1=C 2=B 3=E Standard packaging taped in ammo pack Standard Lieferform gegurtet in Ammo-Pack Maximum ratings (TA = 25°C) Grenzwerte (TA = 25°C) 2N4402, 2N4403 Collector-Emitter-voltage B open - VCE0 40 V Collector-Base-voltage E open - VCE0 40 V Emitter-Base-voltage C open - VEB0 5V Power dissipation – Verlustleistung Ptot 625 mW 1) Collector current – Kollektorstrom (dc) - IC 600 mA Junction temp. – Sperrschichttemperatur Tj 150°C Storage temperature – Lagerungstemperatur TS - 55…+ 150°C Characteristics (Tj = 25°C) Kennwerte (Tj = 25°C) Min. Typ. Max. – – – – 400 mV 750 mV - VBEsat - VBEsat 750 mV – – – 950 mV 1.3 V - ICBV – – 100 nA - IEBV – – 100 nA Collector saturation volt. – Kollektor-Sättigungsspannung - IC = 150 mA, - IB = 15 mA - IC = 500 mA, - IB = 50 mA - VCEsat - VCEsat Base saturation voltage – Basis-Sättigungsspannung - IC = 150 mA, - IB = 15 mA - IC = 500 mA, - IB = 50 mA Collector cutoff current – Kollektorreststrom - VCE = 35 V, - VEB = 0.4 V Emitter cutoff current – Emitterreststrom - VCE = 35 V, - VEB = 0.4 V 1 ) Valid, if leads are kept at ambient temperature at a distance of 2 mm from case Gültig, wenn die Anschlußdrähte in 2 mm Abstand von Gehäuse auf Umgebungstemperatur gehalten werden 36 General Purpose Transistors 2N4402, 2N4403 Characteristics (Tj = 25°C) Kennwerte (Tj = 25°C) Min. Typ. Max. DC current gain – Kollektor-Basis-Stromverhältnis - VCE = 1 V, - IC = 0.1 mA 2N4403 hFE 30 – – - VCE = 1 V, - IC = 1 mA 2N4402 2N4403 hFE hFE 30 60 – – – – - VCE = 1 V, - IC = 10 mA 2N4402 2N4403 hFE hFE 50 100 – – – – - VCE = 1 V, - IC = 150 mA 2N4402 2N4403 hFE hFE 50 100 – – 150 300 - VCE = 1 V, - IC = 500 mA 2N4402 2N4403 hFE hFE 20 20 – – – – h-Parameters at - VCE = 10 V, - IC = 1 mA, f = 1 kHz Small signal current gain Kleinsignal-Stromverstärkung 2N4402 2N4403 hfe hfe 30 60 – – 250 500 Input impedance Eingangs-Impedanz 2N4402 2N4403 hie hie 0.75 kS 1.5 kS – – 7.5 kS 15 kS Output admittance – Ausgangs-Leitwert hoe 1 µS – 100 µS Reverse voltage ratio – Spannungsrückwirkg. hre 0.1 *10-4 – 8 *10-4 fT fT 150 MHz 200 MHz – – – – – – 8.5 pF CEB0 – – 30 pF ton td tr toff ts tf – – – – – – – – – – – – 35 ns 15 ns 20 ns 255 ns 225 ns 30 ns Gain-Bandwidth Product – Transitfrequenz - VCE = 10 V, - IC = 20 mA, f = 100 MHz 2N4402 2N4403 Collector-Base Capacitance – Kollektor-Basis-Kapazität - VCB = 10 V, - IE = ie = 0, f = 1 MHz CCB0 Emitter-Base Capacitance – Emitter-Basis-Kapazität VEB = 2 V, IC = ic = 0, f = 1 MHz Switching times – Schaltzeiten turn-on time delay time rise time turn-off time storage time fall time - ICon = 150 mA - IBon = 15 mA IBoff = 15 mA Thermal resistance junction to ambient air Wärmewiderstand Sperrschicht – umgebende Luft Recommended complementary NPN transistors Empfohlene komplementäre NPN-Transistoren 1 RthA 200 K/W 1) 2N4400, 2N4401 ) Valid, if leads are kept at ambient temperature at a distance of 2 mm from case Gültig, wenn die Anschlußdrähte in 2 mm Abstand von Gehäuse auf Umgebungstemperatur gehalten werden 37