BC 556 ... BC 559 PNP General Purpose Transistors Si-Epitaxial PlanarTransistors PNP Power dissipation – Verlustleistung 500 mW Plastic case Kunststoffgehäuse TO-92 (10D3) Weight approx. – Gewicht ca. 0.18 g Plastic material has UL classification 94V-0 Gehäusematerial UL94V-0 klassifiziert Standard Pinning 1=C 2=B 3=E Standard packaging taped in ammo pack Standard Lieferform gegurtet in Ammo-Pack Maximum ratings (TA = 25/C) Grenzwerte (TA = 25/C) BC 556 BC 557 BC 558/559 Collector-Emitter-voltage B open - VCE0 65 V 45 V 30 V Collector-Base-voltage E open - VCB0 80 V 50 V 30 V Emitter-Base-voltage C open - VEB0 5V Power dissipation – Verlustleistung Ptot 500 mW 1) Collector current – Kollektorstrom (DC) - IC 100 mA Junction temp. – Sperrschichttemperatur Tj 150/C Storage temperature – Lagerungstemperatur TS - 55…+ 150/C Characteristics (Tj = 25/C) Kennwerte (Tj = 25/C) Group A Group B Group C 110...220 200...460 420...800 DC current gain – Kollektor-Basis-Stromverhältnis - VCE = 5 V, - IC = 2 mA hFE h-Parameters at - VCE = 5V, - IC = 2 mA, f = 1 kHz Small signal current gain Stromverstärkung hfe typ. 220 typ. 330 typ. 600 Input impedance – Eingangsimpedanz hie 1.6...4.5 kS 3.2...8.5 kS 6...15 kS Output admittance – Ausg.-Leitwert hoe 18 < 30 :S 30 < 60 :S 60 < 110 :S Reverse voltage transfer ratio Spannungsrückwirkung hre typ.1.5 *10-4 typ. 2 *10-4 typ. 3 *10-4 – – 300 mV Collector saturation voltage – Kollektor-Sättigungsspg. - IC = 100 mA, - IB = 5 mA 1 -VCEsat ) Valid, if leads are kept at ambient temperature at a distance of 2 mm from case Gültig, wenn die Anschlußdrähte in 2 mm Abstand von Gehäuse auf Umgebungstemperatur gehalten werden 8 01.11.2003 General Purpose Transistors BC 556 ... BC 559 Characteristics (Tj = 25/C) Kennwerte (Tj = 25/C) Min. Typ. Max. – – 1V - VBE 580 mV 660 mV 700 mV Base saturation voltage – Basis-Sättigungsspannung - IC = 100 mA, - IB = 5 mA - VBEsat Base-Emitter voltage – Basis-Emitter-Spannung - VCE = 5 V, - IC = 2 mA Collector-Emitter cutoff current – Kollektorreststrom - VCE = 60 V BC 556 - ICE0 – – 0.1 :A - VCE = 40 V BC 557 - ICE0 – – 0.1 :A - VCE = 25 V BC 558 - ICE0 – – 0.1 :A - VCE = 25 V BC 559 - ICE0 – – 0.1 :A 150 MHz – – CCB0 – – 6 pF CEB0 – 9 pF – F – 2 dB 10 dB F – 1 dB 4 dB Gain-Bandwidth Product – Transitfrequenz - VCE = 5 V, - IC = 10 mA, f = 100 MHz fT Collector-Base Capacitance – Kollektor-Basis-Kapazität - VCB = 10 V, IE = ie = 0, f = 1 MHz Emitter-Base Capacitance – Emitter-Basis-Kapazität - VEB = 0.5 V, f = 1 MHz Noise figure – Rauschzahl - VCE = 5 V, - IC = 200 :A BC 556... RG = 2 kS f = 1 kHz, BC 558 )f = 200 Hz BC 559 Thermal resistance junction to ambient air Wärmewiderstand Sperrschicht – umgebende Luft Recommended complementary PNP transistors Empfohlene komplementäre PNP-Transistoren Available current gain groups per type Lieferbare Stromverstärkungsgruppen pro Typ 200 K/W 1) RthA BC 546 ... BC 549 BC 556A BC 557A BC 558A BC 556B BC 557B BC 558B BC 559B BC 557C BC 558C BC 559C 1 ) Valid, if leads are kept at ambient temperature at a distance of 2 mm from case Gültig, wenn die Anschlußdrähte in 2 mm Abstand von Gehäuse auf Umgebungstemperatur gehalten werden 01.11.2003 9