DYNEX MF35-1000

MF35
MF35
Fast Recovery Diode
Replaces March 1998 version, DS4625-3.1
DSDS4625-4.0 January 2000
APPLICATIONS
KEY PARAMETERS
VRRM
1200V
IF(AV)
40A
IFSM
400A
Qr
10µC
trr
0.2ns
■ Inverse, Parallel Or Series Connected Diode
■ Power Supplies
■ High Frequency Applications
FEATURES
■ Glass Passivation
■ High Voltage Capability
■ Fast Recovery Characteristics
VOLTAGE RATINGS
Type Number
Repetitive Peak
Reverse Voltage
VRRM
V
MF35 - 1200
MF35 - 1000
MF35 - 800
MF35 - 600
1200
1000
800
600
Conditions
VRSM = VRRM +100V
Lower voltage grades available.
For stud anode add suffix 'R' to type number. e.g. MF35-1200R.
Outline type code: DO5.
See Package Details for further information.
CURRENT RATINGS
Symbol
Parameter
Conditions
Max.
Units
IF(AV)
Mean forward current
Half sine wave resistive load, Tcase = 65oC
40
A
IF(RMS)
RMS value
Tcase = 65oC
63
A
Continuous (direct) forward current
Tcase = 65oC
50
A
IF
1/8
MF35
SURGE RATINGS
Symbol
Conditions
Parameter
Max.
Units
IFSM
Surge (non-repetitive) forward current
10ms half sine; with VRRM ≤ 10V, Tj = 125oC
400
A
I2t
I2t for fusing
10ms half sine; Tj = 125oC
800
A2s
THERMAL AND MECHANICAL DATA
Conditions
Parameter
Symbol
Min.
Max.
Units
Rth(j-c)
Thermal resistance - junction to case
dc
-
0.8
o
Rth(c-h)
Thermal resistance - case to heatsink
Mounting torque 3.5Nm
with mounting compound
-
0.2
o
Forward (conducting)
-
125
o
Reverse (blocking)
-
125
o
Storage temperature range
-55
125
˚C
Mounting torque
3.2
3.8
Nm
Typ.
Max.
Units
Tvj
Tstg
-
C/W
C/W
C
Virtual junction temperature
C
CHARACTERISTICS
Symbol
2/8
Parameter
Conditions
o
VFM
Forward voltage
At 120A peak, Tcase = 25 C
-
2.0
V
IRM
Peak reverse current
At VRRM, Tcase = 100oC
-
5
mA
trr
Reverse recovery time
IF = 1A, diRR/dt = 25A/µs, Tcase = 25˚C,
VR = 100V
-
200
ns
QR
Recovered charge
IF = 50A, diRR/dt = 50A/µs, Tcase = 25˚C,
VR = 100V
-
10
µC
VTO
Threshold voltage
At Tvj = 125 C
-
1.2
V
rT
Slope resistance
At Tvj = 125 C
-
7.0
mΩ
o
o
MF35
CURVES
80
Measured under pulse
conditions
Tj = 25˚C
150
Tj = 125˚C
100
50
0
1.0
2.0
3.0
Instantaneous forward voltage - (V)
5%
40
20
400
350
300
250
2
3 45
10
200 400 600 800 1000 1200
Rate of rise of forward current - (A/µs)
1.00
Tcase = 125˚C
VR = VRRM
1
0
Fig.2 Forward recovery voltage vs rate of rise of forward
voltage
Thermal impedance - ˚C/W
Peak half sinewave forward current - (A)
Fig.1 Maximum (limit) forward characteristics
200
60
0
0
Tcase = 25˚C
95%
Transient forward voltage - (V)
Instantaneous forward current - (A)
200
50
Cycles at 50Hz
Duration
Fig.3 Surge (non-repetitive) forward current vs time
d.c.
0.75
0.50
0.25
0
0.001
0.01
0.1
Time - (s)
1.0
10
Fig.4 Maximum transient thermal impedance
3/8
MF35
1200 Tcase = 125˚C (No snubber)
Recovery time - (ns)
1000
800
IF = 100A
IF = 50A
600
IF = 10A
400
200
1
10
100
Rate of rise of reverse current - (A/µs)
1000
Fig.5 Recovery time vs dIR/dt
Peak reverse current - (A)
60
Tcase = 125˚C (No snubber)
IF = 100A
50
IF = 50A
40
30
IF = 10A
20
10
0
1
10
100
Rate of change of reverse current - (A/µs)
1000
Recovered charge - (µC)
Fig.6 Peak reverse current vs dIR/dt
20
IF = 100A
T
= 125˚C (No snubber)
18 case
16
IF = 50A
14
12
10
8
IF = 10A
6
4
2
0
1
10
100
Rate of change of reverse current - (A/µs)
Fig.7 Recovered charge vs dIR/dt
4/8
1000
MF35
Peak current - (A)
500
Tcase = 65˚
100
50
10
00
0
10
10
50
00
25
10
00
00
50
0
H
10 z
0
30
0
100
1000
Pulse width - (µs)
10000
Fig.8 Frequency curves - square waveform
Peak current - (A)
500
Tcase = 85˚
100
50
10
00
0
10
10
50
00
25
10
00
00
50
0
30
100
1000
Pulse width - (µs)
0
H
10 z
0
10000
Fig.9 Frequency curves - square waveform
500
Peak current - (A)
0.05
0.1
0.2
0.5
1.0
2.0J
100
10
10
100
1000
Pulse width - (µs)
10000
Fig.10 Energy per pulse - square waveform
5/8
MF35
Peak current - (A)
500
Tcase = 65˚
100
10
00
0
10
10
50
00
25
00
10
00
50
0
50
H
10 z
0
30
0
100
1000
Pulse width - (µs)
10000
Fig.11 Frequency curves - sine waveform
Peak current - (A)
500
Tcase = 85˚
100
10
00
0
10
10
50
00
25
00
10
00
50
0
100
1000
Pulse width - (µs)
50
H
10 z
0
30
0
10000
Fig.12 Frequency curves - sine waveform
500
Peak current - (A)
0.05 0.1
0.2
0.5
2.0J
100
10
10
100
1000
Pulse width - (µs)
Fig.13 Energy per pulse - sine waveform
6/8
1.0
10000
MF35
PACKAGE DETAILS
For further package information, please contact your local Customer Service Centre. All dimensions in mm, unless stated otherwise.
DO NOT SCALE.
Hex. 17.35mm AF max
23
Ø4.0
11.5
Thread 1/4 in
28 UNF 2A
Weight: 20g
Package outline type code: DO5
ASSOCIATED PUBLICATIONS
Title
Application Note
Number
Calculating the junction temperature or power semiconductors
AN4506
Thyristor and diode measurement with a multi-meter
AN4853
Use of V , r on-state characteristic
AN5001
TO
T
7/8
MF35
POWER ASSEMBLY CAPABILITY
The Power Assembly group was set up to provide a support service for those customers requiring more than the basic semiconductor, and has developed a flexible range of heatsink / clamping systems in line with advances in device types and the voltage and
current capability of our semiconductors.
We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The
Assembly group continues to offer high quality engineering support dedicated to designing new units to satisfy the growing needs of
our customers.
Using the up to date CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete
solution (PACs).
HEATSINKS
Power Assembly has it’s own proprietary range of extruded aluminium heatsinks. They have been designed to optimise the
performance or our semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on
request.
For further information on device clamps, heatsinks and assemblies, please contact your nearest Sales Representative or the
factory.
http://www.dynexsemi.com
e-mail: [email protected]
HEADQUARTERS OPERATIONS
DYNEX SEMICONDUCTOR LTD
Doddington Road, Lincoln.
Lincolnshire. LN6 3LF. United Kingdom.
Tel: 00-44-(0)1522-500500
Fax: 00-44-(0)1522-500550
DYNEX POWER INC.
Unit 7 - 58 Antares Drive,
Nepean, Ontario, Canada K2E 7W6.
Tel: 613.723.7035
Fax: 613.723.1518
Toll Free: 1.888.33.DYNEX (39639)
CUSTOMER SERVICE CENTRES
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UK, Germany, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020
SALES OFFICES
France, Benelux, Italy and Spain Tel: +33 (0)1 69 18 90 00. Fax: +33 (0)1 64 46 54 50
Germany Tel: 07351 827723
North America Tel: (613) 723-7035. Fax: (613) 723-1518. Toll Free: 1.888.33.DYNEX (39639) /
Tel: (831) 440-1988. Fax: (831) 440-1989 / Tel: (949) 733-3005. Fax: (949) 733-2986.
UK, Germany, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020
These offices are supported by Representatives and Distributors in many countries world-wide.
© Dynex Semiconductor 2000 Publication No. DS4625-4 Issue No. 4.0 January 2000
TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRINTED IN UNITED KINGDOM
Datasheet Annotations:
Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. The annotations are as follows:Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started.
Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change.
Advance Information: The product design is complete and final characterisation for volume production is well in hand.
No Annotation: The product parameters are fixed and the product is available to datasheet specification.
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