MAS110S MAS110S Fast Turn-off Asymmetric Thyristor/Diode Module Replaces April 1999 version, DS4200-4.0 DS4200-5.0 January 2000 KEY PARAMETERS VDRM 1400V ITSM 2000A IT(AV) per arm 110A Visol 2500V tq 10/12/15µs APPLICATIONS ● High Frequency High Power Choppers And Inverters. ● Ultrasonic Generators. ● Welding. ● PWM Inverters. DESCRIPTION The MAS 110S is a fast thyristor/diode module in an electrically isolated package. The semiconductors are are pressure contact mounted giving high resistance to thermal fatigue, and having excellent heat dissipation qualities. Isolation medium is non-toxic alumina. The MAS110S is recognised under the 'Recognised Component Program of Underwriters Laboratories Inc. USA. File number E151069. Outline type code: MAS110S See Package Details for further information. Fig.1 Package outline (not to scale) G1 VOLTAGE RATINGS K1 2 1 Type Number Repetitive Peak Off-state Voltage VDRM V Conditions MAS110S 14 MAS110S 12 MAS110S 10 MAS110S 08 MAS110S 06 1400 1200 1000 800 600 Tvj = 125˚C, IDRM = 50mA, VDSM = VDRM + 100V Fig.2 Single circuit For full description of part number see 'Ordering Information'. THYRISTOR CURRENT RATINGS Symbol Parameter Conditions Max. Units IT(AV) Mean forward current Half wave resistive load, Tcase = 75oC 110 A IT(RMS) RMS value Tcase = 75oC 175 A 1/9 MAS110S THYRISTOR SURGE RATINGS Symbol ITSM I2t Parameter Surge (non-repetitive) on-state current Conditions Max. Units 10ms half sine; Tcase = 125oC 2.0 kA VR = 0% VDRM 20.0 x 103 A2s I2t for fusing THYRISTOR DYNAMIC CHARACTERISTICS Symbol Parameter Conditions Max. Units VTM Maximum on-state voltage At 600A peak, Tcase = 25oC - 2.9 V IDRM Peak off-state current At VDRM, Tcase = 125oC - 70 mA dV/dt Maximum linear rate of rise of off-state voltage To 60% VDRM Tj = 125oC, Gate open circuit - 1000 V/µs dI/dt Rate of rise of on-state current From 67% VDRM to 600A, Gate source 20V, 20Ω tr = < 0.5µs, Tj = 125˚C - 500 A/µs VT(TO) Threshold voltage At Tvj = 125oC - 1.6 V rT On-state slope resistance At Tvj = 125oC - 1.4 mΩ tq Turn-off time IT = 100A, Tj = 125˚C, tq code: W - 10 µs dV/dt = 20V/µs to 60% tq code: S - 12 µs VDRM, VR = 1V. tq code: X - 15 µs dIR/dt = 30A/µs, VGK = 0V 2/9 Min. Repetitive 50Hz MAS110S THYRISTOR GATE TRIGGER CHARACTERISTICS AND RATINGS Symbol Parameter Conditions Typ. Max. Units VGT Gate trigger voltage VDRM = 12V, Tcase = 25oC, RL = 30Ω - 4.0 V IGT Gate trigger current VDRM = 12V, Tcase = 25oC - 250 mA - 7.0 V - 10 A VRGM Peak reverse gate voltage IFGM Peak forward gate current PGM Peak gate power - - 50 W PG(AV) Mean gate power Average timing = 10ms - 15 W Anode positive with respect to cathode DIODE CURRENT RATINGS Symbol Parameter Conditions Max. Units IT(AV) Mean forward current Half wave resistive load, Tcase = 75oC 112 A IT(RMS) RMS value Tcase = 75oC 175 A Conditions Max. Units 10ms half sine; Tcase = 130oC 3.5 kA VR = 0% VRRM 61.25 x 103 A2s Conditions Max. Units DIODE SURGE RATINGS - PER ARM Parameter Symbol IFSM I2t Surge (non-repetitive) forward current I2t for fusing DIODE DYNAMIC CHARACTERISTICS Parameter Symbol VFM Forward voltage At 600A, Tcase = 25˚C. 2.65 V IRRM Peak reverse current At VRRM, Tcase = 125˚C. 70 mA Reverse recovery time Tcase = 125˚C, dIR/dt = -50V/µs, IFM = 200A 1.3 µs Threshold voltage At Tvj = 125˚C. 1.6 V Forward slope resistance At Tvj = 125˚C. 1.5 mΩ trr VTO rT 3/9 MAS110S THERMAL AND MECHANICAL DATA Conditions Parameter Symbol Min. Max. Units Rth(j-c) Thermal resistance - junction to case (Thyristor or diode) dc - 0.21 o Rth(c-h) Thermal resistance - case to heatsink (Thyristor or diode) Mounting force 6Nm with mounting compound. - 0.07 o C/W C/W Tvj Virtual junction temperature - - 125 o Top Operating temperature range - -40 125 o Tstg Storage temperature range -40 125 o Visol Isolation voltage - 2.5 kV - Mounting torque - 6.0 Nm Commoned terminals to base plate. AC RMS, 1 min, 50Hz. C C C ORDERING INFORMATION The module type number is made up as follows: MAS XXX S XX W Turn-off time code Examples: MAS 110 S 12 W MAS 110 S 08 X Voltage grade. VDRM/100 Single thyristor/diode configuration Nominal IF(AV) at Tcase = 75˚C Pressure contact asymmetric thyristor/diode module MODULE MOUNTING RECOMMENDATIONS ■ Adequate heatsinking is required to maintain the base temperature at 75oC if full rated current is to be achieved. Power dissipation may be calculated by use of VT(TO) and rT information and loss curves in accordance with standard formulae. We can provide assistance with calculations or choice of heatsink if required. ■ The heatsink surface must be smooth and flat; a surface finish of N6 (32µin) and a flatness within 0.05mm (0.002") are recommended. ■ Immediately prior to mounting, the heatsink surface should be lightly scrubbed with fine emery, Scotch Brite™ or a mild chemical etchant and then cleaned with a solvent to remove oxide build up and foreign material. Care should be taken to ensure no foreign particles remain. 4/9 ■ An even coating of thermal compound (eg. Unial) should be applied to both the heatsink and module mounting surfaces. This should ideally be 0.05mm (0.002") per surface to ensure optimum thermal performance. ■ After application of thermal compound, place the module squarely over the mounting holes, (or 'T' slots) in the heatsink. Using a torque wrench, slowly tighten the recommended fixing bolts at each end, rotating each in turn no more than 1/4 of a revolution at a time. Continue until the required torque of 6Nm (55lb.ins) is reached at both ends. ■ It is not acceptable to fully tighten one fixing bolt before starting to tighten the others. Such action may DAMAGE the module. MAS110S Curves Instantaneous on-state current IT - (A) 2000 1500 Tj = 125˚C 1000 500 0 1.0 2.0 3.0 4.0 Instantaneous on-state voltage VT - (V) 5.0 Fig.3 Maximum (limit) on-state characteristics (thyristor only) 5000 Instantaneous forward current IF - (A) 4000 3000 Tj = 125˚C 2000 1000 0 0 2.0 4.0 6.0 Instantaneous forward voltage VF - (V) 8.0 10.0 Fig.4 Maximum (limit) forward characteristics (diode only) 5/9 MAS110S 100 Tj = -40˚C Tj = +25˚C 10 Tj = +125˚C Gate trigger voltage VGT - (V) PGM = 50W 1.0 0.1 0.01 0.1 1.0 Gate trigger current IGT - (A) 10 Fig.5 Gate characteristics 1000 Energy per pulse - (mJ) ITM = 2000A 100 ITM = 1000A ITM = 600A ITM = 400A 10 ITM = 200A ITM = 100A 1.0 1.0 10 100 Pulse width tp - (µs) Fig.6 Sinusoidal energy per pulse (thyristor only) 6/9 1000 MAS110S 100 Tj = 125˚C IFM = 400A Recovered charge QR - (C) IFM = 200A IFM = 100A IFM = 60A IFM = 40A 10 1.0 1.0 10 100 Rate of rise of reverse current dIRR/dt - (A/µs) 1000 Fig.7 Recovered charge (diode only) Thermal impedance - (˚C/W) 1.0 0.1 0.01 0.001 0.01 0.1 Time - (s) 1.0 10 Fig.8 Maximum (limit) transient thermal impedance (thyristor only) 7/9 MAS110S PACKAGE DETAILS For further package information, please contact your local Customer Service Centre. All dimensions in mm, unless stated otherwise. DO NOT SCALE. 23 47 Ø6.5 34 12.8 13 K1 G1 80 M6 1 2 2.8x0.8 30 94 Recommended fixings for mounting: Recommended mounting torque: Recommended torque for electrical connections: Maximum torques for electrical connections: Nominal weight: M6 socket head cap screws. 6Nm (55lb.ins) 5Nm (44lb.ins) 8Nm (70lb.ins) 350g Module outline type code: MP02 8/9 MAS110S POWER ASSEMBLY CAPABILITY The Power Assembly group was set up to provide a support service for those customers requiring more than the basic semiconductor, and has developed a flexible range of heatsink / clamping systems in line with advances in device types and the voltage and current capability of our semiconductors. We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The Assembly group continues to offer high quality engineering support dedicated to designing new units to satisfy the growing needs of our customers. Using the up to date CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete solution (PACs). HEATSINKS Power Assembly has it’s own proprietary range of extruded aluminium heatsinks. They have been designed to optimise the performance or our semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on request. For further information on device clamps, heatsinks and assemblies, please contact your nearest Sales Representative or the factory. http://www.dynexsemi.com e-mail: [email protected] HEADQUARTERS OPERATIONS DYNEX SEMICONDUCTOR LTD Doddington Road, Lincoln. Lincolnshire. LN6 3LF. United Kingdom. Tel: 00-44-(0)1522-500500 Fax: 00-44-(0)1522-500550 DYNEX POWER INC. Unit 7 - 58 Antares Drive, Nepean, Ontario, Canada K2E 7W6. Tel: 613.723.7035 Fax: 613.723.1518 Toll Free: 1.888.33.DYNEX (39639) CUSTOMER SERVICE CENTRES France, Benelux, Italy and Spain Tel: +33 (0)1 69 18 90 00. Fax: +33 (0)1 64 46 54 50 North America Tel: 011-800-5554-5554. Fax: 011-800-5444-5444 UK, Germany, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020 SALES OFFICES France, Benelux, Italy and Spain Tel: +33 (0)1 69 18 90 00. Fax: +33 (0)1 64 46 54 50 Germany Tel: 07351 827723 North America Tel: (613) 723-7035. Fax: (613) 723-1518. Toll Free: 1.888.33.DYNEX (39639) / Tel: (831) 440-1988. Fax: (831) 440-1989 / Tel: (949) 733-3005. Fax: (949) 733-2986. UK, Germany, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020 These offices are supported by Representatives and Distributors in many countries world-wide. © Dynex Semiconductor 2000 Publication No. DS4200-5 Issue No. 5.0 January 2000 TECHNICAL DOCUMENTATION – NOT FOR RESALE. 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