DG648BH45 DG648BH45 Gate Turn-off Thyristor Replaces March 1998 version, DS4093-2.3 DS4093-3.0 January 2000 APPLICATIONS KEY PARAMETERS 2000A ITCM VDRM 4500V IT(AV) 745A dVD/dt 1000V/µs diT/dt 300A/µs ■ Variable speed A.C. motor drive inverters (VSD-AC) ■ Uninterruptable Power Supplies ■ High Voltage Converters ■ Choppers ■ Welding ■ Induction Heating ■ DC/DC Converters FEATURES ■ Double Side Cooling ■ High Reliability In Service ■ High Voltage Capability ■ Fault Protection Without Fuses ■ High Surge Current Capability ■ Turn-off Capability Allows Reduction In Equipment Size And Weight. Low Noise Emission Reduces Acoustic Cladding Necessary For Environmental Requirements Outline type code: H. See Package Details for further information. VOLTAGE RATINGS Type Number DG648BH45 Repetitive Peak Off-state Voltage Repetitive Peak Reverse Voltage VDRM VRRM V V 4500 16 Conditions Tvj = 125oC, IDM = 50mA, IRRM = 50mA CURRENT RATINGS Symbol Parameter Conditions Max. Units 2000 A ITCM Repetitive peak controllable on-state current VD = VDRM, Tj = 125oC, diGQ/dt = 40A/µs, Cs = 2.0µF IT(AV) Mean on-state current THS = 80oC. Double side cooled. Half sine 50Hz. 745 A IT(RMS) RMS on-state current THS = 80oC. Double side cooled. Half sine 50Hz. 1170 A 1/19 DG648BH45 SURGE RATINGS Symbol ITSM I2t diT/dt dVD/dt LS Conditions Parameter Max. Units Surge (non-repetitive) on-state current 10ms half sine. Tj = 125oC 16.0 kA I2t for fusing 10ms half sine. Tj =125oC 1.28 x 106 A2s Critical rate of rise of on-state current VD = 4500V, IT = 2000A, Tj = 125oC, IFG > 30A, Rise time > 1.0µs 300 A/µs To 66% VDRM; RGK ≤ 1.5Ω, Tj = 125oC 175 V/µs To 66% VDRM; VRG = -2V, Tj = 125oC 1000 V/µs 200 nH Rate of rise of off-state voltage Peak stray inductance in snubber circuit IT = 2000A, VDM = 4500V,- Tj = 125˚C, diGQ/dt = 40A/µs, Cs = 2.0µF GATE RATINGS Symbol Parameter Min. Max. Units - 16 V 20 100 A Average forward gate power - 15 W Peak reverse gate power - 19 kW VRGM Peak reverse gate voltage IFGM Peak forward gate current PFG(AV) PRGM Conditions This value maybe exceeded during turn-off diGQ/dt Rate of rise of reverse gate current 30 60 A/µs tON(min) Minimum permissable on time 50 - µs tOFF(min) Minimum permissable off time 100 - µs Min. Max. Units Double side cooled - 0.018 o Anode side cooled - 0.03 o Cathode side cooled - 0.045 o - 0.006 o - 125 o Operating junction/storage temperature range -40 125 o Clamping force 18.0 22.0 kN THERMAL RATINGS AND MECHANICAL DATA Symbol Rth(j-hs) Parameter DC thermal resistance - junction to heatsink surface Rth(c-hs) Contact thermal resistance Tvj Virtual junction temperature TOP/Tstg - 2/19 Conditions Clamping force 20.0kN With mounting compound per contact C/W C/W C/W C/W C C DG648BH45 CHARACTERISTICS Tj = 125oC unless stated otherwise Symbol Conditions Parameter Min. Max. Units VTM On-state voltage At 2000A peak, IG(ON) = 7A d.c. - 3.2 V IDM Peak off-state current VDRM = 4500V, VRG = 0V - 100 mA IRRM Peak reverse current At VRRM - 50 mA VGT Gate trigger voltage VD = 24V, IT = 100A, Tj = 25oC - 1.0 V IGT Gate trigger current VD = 24V, IT = 100A, Tj = 25oC - 3.0 A IRGM Reverse gate cathode current VRGM = 16V, No gate/cathode resistor - 50 mA EON Turn-on energy VD = 3000V - 3170 mJ td Delay time IT = 2000A, dIT/dt = 300A/µs - 1.35 µs tr Rise time IFG = 30A, rise time < 1.0µs - 3.2 µs Turn-off energy - 10000 mJ tgs Storage time - 20.0 µs tgf Fall time IT = 2000A, VDM = VDRM - 2.0 µs tgq Gate controlled turn-off time Snubber Cap Cs = 2.0µF, - 22.0 µs QGQ Turn-off gate charge diGQ/dt = 40A/µs - 6000 µC QGQT Total turn-off gate charge - 12000 µC IGQM Peak reverse gate current - 690 A EOFF 3/19 DG648BH45 2.0 8.0 1.5 6.0 1.0 4.0 VGT 0.5 2.0 Gate trigger current IGT - (A) Gate trigger voltage VGT - (V) CURVES IGT 0 -50 -25 0 25 50 75 100 Junction temperature Tj - (˚C) 0 150 125 Fig.1 Maximum gate trigger voltage/current vs junction temperature Instantaneous on-state current ITM - (A) 4000 Measured under pulse conditions. IG(ON) = 7A Half sine wave 10ms Tj = 125˚C 3000 Tj = 25˚C 2000 1000 0 0 1.0 2.0 3.0 4.0 Instantaneous on-state voltage VTM - (V) Fig.2 On-state characteristics 4/19 5.0 DG648BH45 Maximum permissible turn-off current ITCM - (A) 3000 Conditions: Tj = 125˚C, VDM = VDRM, dIGQ/dt = 40A/µs 2000 1000 0 0 1.0 2.0 3.0 Snubber capacitance CS - (µF) 4.0 Fig.3 Maximum dependence of ITCM on CS 0.020 0.015 0.010 0.005 0 0.001 0.01 0.1 Time - (s) 1.0 10 Fig.4 Maximum (limit) transient thermal impedance - double side cooled Peak half sine wave on-state current - (kA) Thermal impedance - ˚C/W dc 40 30 20 10 0 0.0001 0.001 0.01 Pulse duration - (s) 0.1 Fig.5 Surge (non-repetitive) on-state current vs time 1.0 5/19 DG648BH45 Mean on-state power dissipation - (W) 4000 Conditions: IG(ON) = 7A dc 3000 180˚ 120˚ 2000 60˚ 30˚ 1000 0 0 500 1000 1500 Mean on-state current IT(AV) - (A) 70 80 90 100 120 Maximum permissible case temperature - (˚C) 130 Mean on-state power dissipation - (W) Fig.6 Steady state rectangluar wave conduction loss - double side cooled 3000 Conditions: IG(ON) = 7A 180˚ 120˚ 90˚ 2000 60˚ 30˚ 1000 0 0 200 400 600 800 1000 1200 1400 80 90 100 120 130 Mean on-state current IT(AV) - (A) Maximum permissible case temperature - (˚C) Fig.7 Steady state sinusoidal wave conduction loss - double side cooled 6/19 DG648BH45 Conditions: Tj = 25˚C, IFGM = 30A, CS = 2.0µF, dI/dt = 300A/µs, 3000 dIFG/dt = 30A/µs VD = 3000V VD = 2000V 2000 1000 VD = 1000V 0 0 500 1000 1500 2000 On-state current IT - (A) 2500 3000 Fig.8 Turn-on energy vs on-state current 5000 Conditions: Tj = 25˚C, IT = 2000A, CS = 2.0µF, RS = 10 Ohms dI/dt = 300A/µs, dIFG/dt = 30A/µs 4000 Turn-on energy loss EON - (mJ) Turn-on energy loss EON - (mJ) 4000 3000 VD = 3000V 2000 VD = 2000V 1000 VD = 1000V 0 0 20 40 60 Peak forward gate current IFGM - (A) 80 Fig.9 Turn-on energy vs peak forward gate current 7/19 DG648BH45 Turn-on energy loss EON - (mJ) 4000 Conditions: Tj = 125˚C, IFGM = 30A, CS = 2.0µF, RS = 10Ω, 3000 dIT/dt = 300A/µs, dIFG/dt = 30A/µs, VD = 3000V VD = 2000V 2000 1000 0 VD = 1000V 0 500 1000 1500 2000 On-state current IT - (A) 2500 3000 Fig.10 Turn-on energy vs on-state current 5000 Conditions: Tj = 125˚C, IT = 2000A, CS = 2.0µF, RS = 10 Ohms dI/dt = 300A/µs, dIFG/dt = 30A/µs 3000 Turn-on energy loss EON - (mJ) Turn-on energy loss EON - (mJ) 4000 4000 VD = 3000V VD = 2000V 2000 1000 Conditions: IT = 2000A, Tj = 125˚C, CS = 2.0µF 3000 RS = 10 Ohms IFGM = 30A, dIFG/dt = 30A/µs VD = 3000V VD = 2000V 2000 1000 VD = 1000V VD = 1000V 0 0 0 100 200 300 Rate of rise of on-state current dIT/dt - (A/µs) 0 20 40 60 Peak forward gate current IFGM - (A) Fig.11 Turn-on energy vs peak forward gate current 8/19 80 Fig.12 Turn-on energy vs rate of rise of on-state current DG648BH45 tr 3.0 2.0 td 1.0 0 Conditions: Tj = 125˚C, IFGM = 30A, CS = 2.0µF, VD = 3000V, RS = 10Ω, dIT/dt = 300A/µs, dIFG/dt = 30A/µs, 0 500 1000 1500 2000 On-state current IT - (A) 2500 3000 Fig.13 Delay time & rise time vs turn-on current 8.0 Turn-on delay time and rise time - (µs) Turn-on delay and rise time - (µs) 4.0 Conditions: Tj = 125˚C, IT = 2000A, CS = 2.0µF, RS = 10 Ohms, dI/dt = 300A/µs, dIFG/dt = 30A/µs, VD = 3000V 6.0 4.0 2.0 tr td 0 0 20 40 60 Peak forward gate current IFGM - (A) 80 Fig.14 Delay time & rise time vs peak forward gate current 9/19 DG648BH45 5000 4000 Turn-off energy loss EOFF - (mJ) VDRM Conditions: Tj = 25˚C, CS = 2.0µF, dIGQ/dt = 40A/µs 0.75x VDRM 3000 0.5x VDRM 2000 1000 0 0 500 1000 1500 2000 On-state current IT - (A) 2500 3000 Fig.15 Turn-off energy vs on-state current Turn-off energy per pulse EOFF - (mJ) 6000 Conditions: Tj = 25˚C, CS = 2.0µF, IT = 2000A VDRM 5000 0.75x VDRM 4000 3000 2000 20 0.5x VDRM 30 40 50 60 Rate of rise of reverse gate current dIGQ/dt - (A/µs) Fig.16 Turn-off energy vs rate of rise of reverse gate current 10/19 70 DG648BH45 10000 Conditions: Tj = 125˚C, CS = 2.0µF, dIGQ/dt = 40A/µs 0.75x VDRM 6000 0.5x VDRM 4000 2000 0 0 500 1000 1500 2000 2500 On-state current IT - (A) FIG 17Fig.17 TURNTurn-off OFF ENERGY ON STATE CURRENT energy vs on-state current 12000 Turn-off energy per pulse EOFF - (mJ) Turn-off energy loss EOFF - (mJ) 8000 VDRM Conditions: Tj = 125˚C, CS = 2.0µF, IT = 2000A 3000 VDRM 10000 0.75x VDRM 8000 6000 4000 20 0.5x VDRM 30 40 50 60 Rate of rise of reverse gate current dIGQ/dt - (A/µs) 70 Fig.18 Turn-off energy loss vs rate of rise of reverse gate current 11/19 DG648BH45 Turn-off energy per pulse EOFF - (mJ) 8000 Conditions: Tj = 125˚C, VDM = 0.75x VDRM, dIGQ/dt = 40A/µs CS = 2.0µF CS = 4.0µF 6000 4000 2000 0 0 500 1000 1500 2000 On-state current IT - (A) 2500 3000 Fig.19 Turn-off energy vs on-state current Gate storage time tgs - (µs) 20.0 Conditions: CS = 2.0µF, dIGQ/dt = 40A/µs Tj = 125˚C Tj = 25˚C 15.0 10.0 5.0 0 0 500 1000 1500 2000 On-state current IT - (A) Fig.20 Gate storage time vs on-state current 12/19 2500 3000 DG648BH45 30 Conditions: CS = 2.0µF, IT = 2000A Gate storage time tgs - (µs) 25 20 Tj = 125˚C 15 10 20 Tj = 25˚C 30 40 50 60 Rate of rise of reverse gate current dIGQ/dt - (A/µs) 70 Fig.21 Gate storage time vs rate of rise of reverse gate current 2.0 Tj = 125˚C Conditions: CS = 2.0µF, dIGQ/dt = 40A/µs Gate fall time tgf - (µs) 1.5 Tj = 25˚C 1.0 0.5 0 0 500 1000 1500 2000 On-state current IT - (A) 2500 3000 Fig.22 Gate fall time vs on-state current 13/19 DG648BH45 2.5 Conditions: CS = 2.0µF, IT = 2000A Tj = 125˚C Gate fall time tgf - (µs) 2.0 1.5 Tj = 25˚C 1.0 0.5 20 30 40 50 60 Rate of rise of reverse gate current dIGQ/dt - (A/µs) 70 Fig.23 Gate fall time vs rate of rise of reverse gate current Peak reverse gate current IGQM - (A) 800 Conditions: CS = 2.0µF, dIGQ/dt = 40A/µs Tj = 125˚C 600 Tj = 25˚C 400 200 0 0 500 1000 1500 2000 Turn-off current IT - (A) 2500 Fig.24 Peak reverse gate current vs turn-off current 14/19 3000 DG648BH45 750 Conditions: CS = 2.0µF, IT = 2000A Tj = 125˚C Peak reverse gate current IGQM - (A) 700 650 Tj = 25˚C 600 550 500 20 30 40 50 60 Rate of rise of reverse gate current dIGQ/dt - (A/µs) 70 Fig.25 Peak reverse gate current vs rate of rise of reversegate current Total turn-off charge QGQ - (µC) 8000 Conditions: CS = 2.0µF, dIGQ/dt = 40A/µs Tj = 125˚C 6000 Tj = 25˚C 4000 2000 0 0 500 1000 1500 2000 On-state current IT - (A) 2500 3000 Fig.26 Turn-off gate charge vs on-state current 15/19 DG648BH45 Turn-off gate charge QGQ - (µC) 7000 Conditions: CS = 2.0µF, IT = 2000A 6000 TJ = 125˚C 5000 Tj = 25˚C 4000 3000 20 30 40 50 60 Rate of rise of reverse gate current dIGQ/dt - (A/µs) 70 Rate of rise of off-state voltage dV/dt - (V/µs) Fig.27 Turn-off gate charge vs rate of rise of reverse gate current 1000 Tj = 125˚C 500 VD = 2250V VD = 3000V 0 0.1 1.0 10 100 Gate cathode resistance RGK - (Ohms) 1000 Fig.28 Rate of rise of off-state voltage vs gate cathode resistance 16/19 Anode voltage and current DG648BH45 0.9VD 0.9IT dVD/dt VD VD VDM IT td ITAIL VDP 0.1VD tgs tr tgf tgt Gate voltage and current dIFG/dt 0.1IFG tgq IFG VFG IG(ON) 0.1IGQ tw1 VRG QGQ 0.5IGQM IGQM V(RG)BR Recommended gate conditions: ITCM = 2000A IFG = 30A IG(ON) = 7A d.c. tw1(min) = 20µs IGQM = 690A diGQ/dt = 40A/µs QGQ = 6000µC VRG(min) = 2V VRG(max) = 16V These are recommended Dynex Semiconductor conditions. Other conditions are permitted according to users gate drive specifications. Fig.29 General switching waveforms 17/19 DG648BH45 PACKAGE DETAILS For further package information, please contact Customer Service. All dimensions in mm, unless stated otherwise. DO NOT SCALE. 2 holes Ø3.60 ± 0.05 x 2.0 ± 0.1 deep (One in each electrode) Cathode Aux. Tube Gate Tube 15˚ 52 Anode 26 ± 0.5 Ø100 Ø62.85 9.6 Ø62.85 55 Nominal weight: 820g Clamping force: 20kN ±10% Lead length: 505mm Package outine type code: H 18/19 Cathode POWER ASSEMBLY CAPABILITY The Power Assembly group was set up to provide a support service for those customers requiring more than the basic semiconductor, and has developed a flexible range of heatsink and clamping systems in line with advances in device voltages and current capability of our semiconductors. We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The Assembly group offers high quality engineering support dedicated to designing new units to satisfy the growing needs of our customers. Using the latest CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete Solution (PACs). HEATSINKS The Power Assembly group has its own proprietary range of extruded aluminium heatsinks which have been designed to optimise the performance of Dynex semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on request. For further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or Customer Services. http://www.dynexsemi.com e-mail: [email protected] HEADQUARTERS OPERATIONS DYNEX SEMICONDUCTOR LTD Doddington Road, Lincoln. Lincolnshire. LN6 3LF. United Kingdom. Tel: +44-(0)1522-500500 Fax: +44-(0)1522-500550 CUSTOMER SERVICE Tel: +44 (0)1522 502753 / 502901. Fax: +44 (0)1522 500020 SALES OFFICES Benelux, Italy & Switzerland: Tel: +33 (0)1 64 66 42 17. Fax: +33 (0)1 64 66 42 19. France: Tel: +33 (0)2 47 55 75 52. Fax: +33 (0)2 47 55 75 59. Germany, Northern Europe, Spain & Rest Of World: Tel: +44 (0)1522 502753 / 502901. Fax: +44 (0)1522 500020 North America: Tel: (440) 259-2060. Fax: (440) 259-2059. Tel: (949) 733-3005. Fax: (949) 733-2986. These offices are supported by Representatives and Distributors in many countries world-wide. © Dynex Semiconductor 2003 TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRODUCED IN UNITED KINGDOM Datasheet Annotations: Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. The annotations are as follows:Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started. Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change. Advance Information: The product design is complete and final characterisation for volume production is well in hand. No Annotation: The product parameters are fixed and the product is available to datasheet specification. This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company reserves the right to alter without prior notice the specification, design or price of any product or service. 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