DYNEX DG808BC45

DG808BC45
Gate Turn-off Thyristor
DS5914-1.1 January 2009 (LN26575)
KEY PARAMETERS
FEATURES
Double Side Cooling
High Reliability In Service
High Voltage Capability
Fault Protection Without Fuses
High Surge Current Capability
Turn-off Capability Allows Reduction in
ITCM
VDRM
I(AV)
dVD/dt*
dIT/dt
3000A
4500V
780A
1000V/µs
400A/µs
Equipment Size and Weight. Low Noise
Emission Reduces Acoustic Cladding Necessary
For Environmental Requirements
APPLICATIONS
Variable speed AC motor drive inverters (VSDAC) including Traction drives
Uninterruptable Power Supplies
High Voltage Converters
Choppers
Welding
Induction Heating
DC/DC Converters
Outline type code: C
(See Package Details for further information)
Fig. 1 Package outline
VOLTAGE RATINGS
Type Number
Repetitive Peak Off-state
Voltage VDRM (V)
Repetitive Peak Reverse
Voltage VRRM (V)
DG808BC45
4500
16
Conditions
Tvj = 125°C, IDM =100mA,
IRRM = 50mA
CURRENT RATINGS
Symbol
Parameter
ITCM
Repetitive peak controllable on-state current
IT(AV)
Mean on-state current
IT(RMS)
RMS on-state current
Conditions
VD = 66%VDRM, Tj = 125°C,
dIGQ/dt = 40A/s, CS = 4 F
THS = 80°C, Double side cooled.
Half sine 50Hz
THS = 80°C, Double side cooled.
Half sine 50Hz
Max.
Units
3000
A
780
A
1225
A
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DG808BC45
SEMICONDUCTOR
SURGE RATINGS
Symbol
ITSM
2
It
Parameter
Test Conditions
Max.
Units
Surge (non repetitive) on-state current
10ms half sine. Tj = 125°C
16.0
kA
10ms half sine. Tj = 125°C
1.28
MA s
VD = 3000V, IT = 3000A, Tj = 125°C, IFG > 40A,
Rise time > 1.0 s
400
A/s
To 66% VDRM; RGK 1.5, Tj = 125°C
100
V/s
To 66% VDRM; VRG -2V, Tj = 125°C
1000
V/s
200
nH
2
I t for fusing
diT/dt
Critical rate of rise of on-state current
dVD/dt
Rate of rise of off-state voltage
LS
Peak stray inductance in snubber
circuit
2
o
IT = 3000A, VD = VDRM, Tj = 125 C, dIGQ = 40A/us,
CS = 4.0uF
GATE RATINGS
Symbol
Parameter
Test Conditions
Min.
Max.
Units
This value may exceeded during turn-off
-
16
V
VRGM
Peak reverse gate voltage
IFGM
Peak forward gate current
-
100
A
Average forward gate power
-
20
W
Peak reverse gate power
-
24
kW
PFG(AV)
PRGM
diGQ/dt
Rate of rise of reverse gate current
30
60
A/s
tON(min)
Minimum permissible on time
50
-
s
tOFF(min)
Minimum permissible off time
100
-
s
THERMAL AND MECHANICAL RATINGS
Symbol
Rth(j-hs)
Parameter
Thermal resistance – junction to
heatsink surface
Test Conditions
Double side cooled
Min.
Max.
Units
DC
-
0.014
°C/W
Anode DC
-
0.0233
°C/W
Cathode DC
-
0.035
°C/W
Per contact
-
0.0036
°C/W
-40
125
°C
Single side cooled
Rth(c-hs)
Contact thermal resistance
Clamping force 36.0kN
With mounting compound
Tvj
Virtual junction temperature
On-state (conducting)
Top/Tstg
Operating junction/storage
temperature range
-40
125
°C
Clamping force
28.0
44.0
kN
Fm
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DG808BC45
SEMICONDUCTOR
CHARACTERISTICS
o
Tj =125 C unless stated otherwise
Symbol
Parameter
Test Conditions
Min.
Max.
Units
VTM)
On-state voltage
At 3000A peak, IG(ON) = 10A d.c.
-
3.75
V
IDM
Peak off-state current
VDRM = 4500V, VRG = 0V
-
100
mA
IRRM
Peak reverse current
VRRM = 16V
-
50
mA
VGT
Gate trigger voltage
VD = 24V, IT = 100A, Tj = 25 C
o
-
1.2
V
IGT
Gate trigger current
VD = 24V, IT = 100A, Tj = 25 C
o
-
3.5
A
IRGM
Reverse gate cathode current
VRGM = 16V, No gate/cathode resistor
-
10
mA
EON
Turn-on Energy
VD = 3000V
-
2860
mJ
td
Delay time
IT = 3000A, dIT/dt = 300A/µs
-
2.1
µs
tr
Rise time
IFG = 40A, rise time < 1.0µs
-
4.8
µs
Turn-off energy
-
12000
mJ
tgs
Storage time
-
25
µs
tgf
Fall time
IT = 3000A, VDM = VDRM
2
µs
tgq
Gate controlled turn-off time
Snubber Cap Cs = 4.0µC
27
µs
QGQ
Turn-off gate charge
diGQ/dt = 40A/us
12000
µC
QGQT
Total turn-off gate charge
24000
µC
IGQM
Peak reverse gate current
800
A
EOFF
-
-
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DG808BC45
SEMICONDUCTOR
10
9
1.6
8
1.4
7
1.2
6
VGT
1
5
0.8
4
0.6
3
IGT
0.4
2
0.2
1
0
-50 -25
0
25
50
Gate trigger current IGT - (A)
Gate trigger voltage VGT - (V)
1.8
3500
0
75 100 125 150
Instantaneous on-state current I T - (A)
2
Measured under
pulse conditions.
IG(ON) = 10A
Half sine wave 10ms
3000
Tj=25oC
2500
2000
Tj=125oC
1500
1000
500
0
1
o
Junction temperature Tj - ( C)
1.5
2
2.5
3
3.5
4
Instantaneous on-state voltage VTM - (V)
Fig.2 Maximum gate trigger voltage/current vs junction
temperature
Fig.3 On-state characteristics
Maximum permissible turn-off current I TCM - (A)
4000
3500
3000
2500
2000
Conditions:
Tj = 125 oC
VDM = VDRM
dIGQ = 40A/us
1500
1000
500
0
0
2
4
6
8
Snubber capacitance CS - (uF)
Fig.4 Maximum dependence of ITCM on CS
Fig.5 Maximum (limit) transient thermal impedancedouble side cooled
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DG808BC45
SEMICONDUCTOR
3500
35
30
25
20
15
10
2500
VD = 2000V
2000
1500
VD = 1000V
1000
0
0.001
0.01
0.1
0
1
Fig.6 Surge (non-repetitive) on-state current vs time
4500
3000
V D = 3000V
1500
V D = 2000V
1000
500
Conditions:
IT = 3000A;Tj = 125oC
CS = 4.0uF;RS = 10 Ohms
IFGM = 40A;diFG /dt =
40A/us
3000
2500
2000
3000
Fig.7 Turn-on energy vs on-state current
Turn-on energy loss EON - (mJ)
(mJ)
3500
2000
3500
Conditions:
Tj = 125oC; IT = 3000A
Cs = 4.0uF
Rs = 10 Ohms
dIT /dt = 300A/uS
dIFG/dt = 40A/uS
4000
1000
On-state current IT -(A)
Pulse duration - (s)
ON -
VD = 3000V
500
5
0
0.0001
Turn-on energy loss E
Conditions:
o
Tj = 125 C; IFGM = 40A
Cs = 4.0uF; Rs = 10 Ohms
dIT/dt = 300A/uS
dIFG/dt = 40A/uS
3000
Turn-on energy loss EON - (mJ)
Peak half sine wave on-state current - (kA)
40
2500
VD = 3000V
2000
VD = 2000V
1500
1000
VD = 1000V
500
V D = 1000V
0
0
0
20
40
60
80
100
Peak forward gate current IFGM - (A)
Fig.8 Turn-on energy vs forward gate current
0
100
200
300
400
Rate of rise of on-state current diT/dt - (A/us)
Fig.9 Turn-on energy vs rate of rise of on-state current
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DG808BC45
SEMICONDUCTOR
10
5
Turn-on delay time, td, and rise time, tr - (us)
Turn-on delay time, td, and rise time, tr - (us)
6
rise time
Conditions:
Tj = 125oC; IFGM = 40A
Cs = 4.0uF; Rs = 10 Ohms
diT/dt = 300A/uS
Vd = 2000V
4
3
2
delay time
1
Conditions:
IT = 3000A
9
7
6
rise time
5
4
3
2
delay time
1
0
0
0
500
1000
1500
2000
2500
0
3000
20
40
60
80
Peak forward gate current IFGM - (A)
On-state current IT - (A)
Fig.10 Delay and rise time vs on-state current
Fig.11 Delay and rise time vs peak forward gate current
14000
13000
Conditions:
Tj = 125oC
Cs = 4.0uF
diGQ/dt =
40A/uS
12000
10000
VDM = 100% VDRM
8000
VDM = 75% VDRM
6000
VDM = 50% VDRM
4000
2000
Turn-off energy per pulse EOFF - (mJ)
Turn-off energy per pulse EOFF - (mJ)
Tj = 125oC
Cs = 4.0uF
Rs = 10 Ohms
diT/dt = 300A/uS
diFG/dt = 40A/uS
VD = 3000V
8
12000
VDM = 100% VDRM
11000
10000
VDM = 75% VDRM
9000
Conditions:
Tj = 125oC
Cs = 4.0uF
IT = 3000A
8000
7000
6000
VDM = 50% VDRM
5000
0
0
1000
2000
3000
4000
On-state current, IT - (A)
Fig.12 Turn-off energy vs on-state current
20
30
40
50
60
Rate of rise of reverse gate current dIGQ/dt - (A/us)
Fig.13 Turn-off energy loss vs rate of rise of reverse gate
current
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DG808BC45
SEMICONDUCTOR
30
CS = 3 uF
12000
10000
CS = 2 uF
8000
6000
Conditions :
Tj = 125 oC
VDM = VDRM
dIGQ/dt = 40 A/us
4000
2000
Conditions :
Cs = 4 uF
dIGQ/dt = 40 A/us
25
CS = 4uF
CS = 2.5 uF
Gate storage time Tgs - (us)
Turn-off energy per pulse EOFF - (mJ)
14000
Tj = 25 oC
20
15
10
5
0
0
0
1000
2000
3000
4000
0
On-state current IT - (A)
1000
2000
3000
4000
On-state current IT - (A)
Fig.14 Turn-off energy vs on-state current
Fig.15 Gate storage time vs on-state current
40
2.5
Conditions:
IT = 3000A
Cs = 4.0uF
30
Tj = 125 oC
25
Tj = 25 oC
15
0
40
50
Rate of rise of reverse gate current dIGQ/dt - (A/us)
Fig.16 Gate storage time vs rate of rise of reverse gate
current
Tj = 25 oC
1
0.5
30
Tj = 125 oC
1.5
20
20
Conditions:
Cs = 4.0uF
diGQ/dt = 40A/uS
2
Gate fall time tgf - (us)
35
Gate storage time t gs - (us)
Tj = 125 oC
0
1000
2000
3000
4000
On-state current IT - (A)
Fig.17 Gate fall time vs on-state current
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DG808BC45
SEMICONDUCTOR
2.5
900
2.3
Peak reverse gate current IGQM - (A)
Conditions:
IT = 3000A
Cs = 4.0uF
2.4
2.2
Gate fall time tgf - (us)
2.1
2
1.9
Tj = 125 oC
1.8
1.7
1.6
1.5
1.4
1.3
1.2
Tj = 25 oC
Conditions:
Cs = 4.0uF
diGQ/dt = 40A/uS
800
700
Tj = 125 oC
600
500
Tj = 25 oC
400
300
1.1
1
20
30
40
50
Rate of rise of reverse gate current dIGQ/dt (A/us)
200
60
0
2000
3000
4000
On-state current IT - (A)
Fig.18 Gate fall time vs rate of rise of reverse gate
current
Fig.19 Peak reverse gate current vs on-state current
850
14000
Conditions:
IT = 3000A
Cs = 4.0uF
800
Tj = 125oC
775
750
725
Tj = 25oC
700
675
650
Tj = 125oC
Conditions:
Cs = 4.0uF
diGQ/dt = 40A/uS
12000
Turn-off gate charge QGQ - (uC)
825
Peak reverse gate current IGQM - (A)
1000
Tj = 25oC
10000
8000
6000
4000
2000
625
600
20
25
30
35
40
45
50
55
60
65
Rate of rise of reverse gate current dIGQ/dt - (A/us)
Fig.20 Reverse gate current vs rate of rise of reverse
gate current
0
0
1000
2000
3000
4000
On-state current IT - (A)
Fig.21 Turn-off gate charge vs on-state current
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DG808BC45
SEMICONDUCTOR
15000
1000
Turn-off gate charge Q GQ - (uC)
14000
Rate of rise of off-state voltage dv/dt - (V/us)
Conditions:
IT = 3000A
Cs = 4.0uF
13000
Tj = 125oC
12000
11000
10000
Tj = 25oC
9000
8000
20
30
40
50
Rate of rise of reverse gate current dIGQ/dt - (A/us)
Fig.22 Turn-off charge vs rate of rise of reverse gate
current
Tj = 125oC
900
800
VD = 2250V
700
600
500
400
300
200
100
VD = 3000V
0
0.1
1
10
100
1000
Gate cathode resistance RGK - (Ohms)
Fig.23 Rate of rise of off-state voltage vs gate cathode
resistance
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DG808BC45
SEMICONDUCTOR
Fig.24 General switching waveforms
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DG808BC45
SEMICONDUCTOR
PACKAGE DETAILS
For further package information, please contact Customer Services. All dimensions in mm, unless stated otherwise.
DO NOT SCALE.
Nominal weight: 1400g
Clamping force: 31.5 ±10%
Lead length: 600mm
Package outline type code: C
Fig.31 Package outline
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DG808BC45
SEMICONDUCTOR
POWER ASSEMBLY CAPABILITY
The Power Assembly group was set up to provide a support service for those customers requiring more than the basic
semiconductor, and has developed a flexible range of heatsink and clamping systems in line with advances in device voltages
and current capability of our semiconductors.
We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today.
The Assembly group offers high quality engineering support dedicated to designing new units to satisfy the growing needs of our
customers.
Using the latest CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete
Solution (PACs).
HEATSINKS
The Power Assembly group has its own proprietary range of extruded aluminium heatsinks which have been designed to optimise
the performance of Dynex semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is
available on request.
For further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or
Customer Services.
Stresses above those listed in this data sheet may cause permanent damage to the device. In extreme conditions, as with all
semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions should always be
followed.
http://www.dynexsemi.com
e-mail: [email protected]
HEADQUARTERS OPERATIONS
DYNEX SEMICONDUCTOR LTD
Doddington Road, Lincoln
Lincolnshire, LN6 3LF. United Kingdom.
Tel: +44(0)1522 500500
Fax: +44(0)1522 500550
CUSTOMER SERVICE
Tel: +44(0)1522 502753 / 502901. Fax: +44(0)1522 500020
Dynex Semiconductor 2003 TECHNICAL DOCUMENTATION – NOT FOR
RESALE. PRODUCED IN UNITED KINGDOM.
This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or
contract nor to be regarded as a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or
suitability of any product or service. The Company reserves the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible
methods of use is provided as a guide only and does not constitute any guarantee that such methods of use will be satisfactory in a specific piece of equipment. It is the user’s responsibility to
fully determine the performance and suitability of any equipment using such information and to ensure that any publication or data used is up to date and has not been superseded. These
products are not suitable for use in any medical products whose failure to perform may result in significant injury or death to the user. All products and materials are sold and services provided
subject to the Company’s conditions of sale, which are available on request.
All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners.
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