DG808BC45 Gate Turn-off Thyristor DS5914-2 July 2014 (LN31731) KEY PARAMETERS FEATURES Double Side Cooling High Reliability In Service High Voltage Capability Fault Protection Without Fuses High Surge Current Capability Turn-off Capability Allows Reduction in ITCM VDRM I(AV) dVD/dt* dIT/dt 3000A 4500V 780A 1000V/µs 400A/µs Equipment Size and Weight. Low Noise Emission Reduces Acoustic Cladding Necessary For Environmental Requirements APPLICATIONS Variable speed AC motor drive inverters (VSDAC) including Traction drives Uninterruptable Power Supplies High Voltage Converters Choppers Welding Induction Heating DC/DC Converters Outline type code: C (See Package Details for further information) Fig. 1 Package outline VOLTAGE RATINGS Type Number Repetitive Peak Off-state Voltage VDRM (V) Repetitive Peak Reverse Voltage VRRM (V) DG808BC45 4500 16 Conditions Tvj = 125°C, IDM =100mA, IRRM = 50mA CURRENT RATINGS Symbol Parameter ITCM Repetitive peak controllable on-state current IT(AV) Mean on-state current IT(RMS) RMS on-state current Conditions VD = 66%VDRM, Tj = 125°C, dIGQ/dt = 40A/s, CS = 4 F THS = 80°C, Double side cooled. Half sine 50Hz THS = 80°C, Double side cooled. Half sine 50Hz Max. Units 3000 A 780 A 1225 A 1/12 www.dynexsemi.com DG808BC45 SEMICONDUCTOR SURGE RATINGS Symbol ITSM 2 It Parameter Test Conditions Max. Units Surge (non repetitive) on-state current 10ms half sine. Tj = 125°C 16.0 kA 10ms half sine. Tj = 125°C 1.28 MA s VD = 3000V, IT = 3000A, Tj = 125°C, IFG > 40A, Rise time > 1.0 s 400 A/s To 66% VDRM; RGK 1.5, Tj = 125°C 100 V/s To 66% VDRM; VRG -2V, Tj = 125°C 1000 V/s 200 nH 2 I t for fusing diT/dt Critical rate of rise of on-state current dVD/dt Rate of rise of off-state voltage LS Peak stray inductance in snubber circuit 2 o IT = 3000A, VD = VDRM, Tj = 125 C, dIGQ = 40A/us, CS = 4.0uF GATE RATINGS Symbol Parameter Test Conditions Min. Max. Units This value may exceeded during turn-off - 16 V VRGM Peak reverse gate voltage IFGM Peak forward gate current - 100 A Average forward gate power - 20 W Peak reverse gate power - 24 kW PFG(AV) PRGM diGQ/dt Rate of rise of reverse gate current 30 60 A/s tON(min) Minimum permissible on time 50 - s tOFF(min) Minimum permissible off time 100 - s THERMAL AND MECHANICAL RATINGS Symbol Rth(j-hs) Parameter Thermal resistance – junction to heatsink surface Test Conditions Double side cooled Min. Max. Units DC - 0.014 °C/W Anode DC - 0.0233 °C/W Cathode DC - 0.035 °C/W Per contact - 0.0036 °C/W -40 125 °C Single side cooled Rth(c-hs) Contact thermal resistance Clamping force 36.0kN With mounting compound Tvj Virtual junction temperature On-state (conducting) Top/Tstg Operating junction/storage temperature range -40 125 °C Clamping force 28.0 44.0 kN Fm 2/12 www.dynexsemi.com DG808BC45 SEMICONDUCTOR CHARACTERISTICS o Tj =125 C unless stated otherwise Symbol Parameter Test Conditions Min. Max. Units VTM) On-state voltage At 3000A peak, IG(ON) = 10A d.c. - 3.75 V IDM Peak off-state current VDRM = 4500V, VRG = 0V - 100 mA IRRM Peak reverse current VRRM = 16V - 50 mA VGT Gate trigger voltage VD = 24V, IT = 100A, Tj = 25 C o - 1.2 V IGT Gate trigger current VD = 24V, IT = 100A, Tj = 25 C o - 3.5 A IRGM Reverse gate cathode current VRGM = 16V, No gate/cathode resistor - 10 mA EON Turn-on Energy VD = 3000V - 2860 mJ td Delay time IT = 3000A, dIT/dt = 300A/µs - 2.1 µs tr Rise time IFG = 40A, rise time < 1.0µs - 4.8 µs Turn-off energy - 12000 mJ tgs Storage time - 25 µs tgf Fall time IT = 3000A, VDM = VDRM 2 µs tgq Gate controlled turn-off time Snubber Cap Cs = 4.0µC 27 µs QGQ Turn-off gate charge diGQ/dt = 40A/us 12000 µC QGQT Total turn-off gate charge 24000 µC IGQM Peak reverse gate current 800 A EOFF - - 3/12 www.dynexsemi.com DG808BC45 SEMICONDUCTOR 10 9 1.6 8 1.4 7 1.2 6 VGT 1 5 0.8 4 0.6 3 IGT 0.4 2 0.2 1 0 -50 -25 0 25 50 Gate trigger current IGT - (A) Gate trigger voltage VGT - (V) 1.8 3500 0 75 100 125 150 Instantaneous on-state current I T - (A) 2 Measured under pulse conditions. IG(ON) = 10A Half sine wave 10ms 3000 Tj=25oC 2500 2000 Tj=125oC 1500 1000 500 0 1 o Junction temperature Tj - ( C) 1.5 2 2.5 3 3.5 4 Instantaneous on-state voltage VTM - (V) Fig.2 Maximum gate trigger voltage/current vs junction temperature Fig.3 On-state characteristics Maximum permissible turn-off current I TCM - (A) 4000 3500 3000 2500 2000 Conditions: Tj = 125 oC VDM = VDRM dIGQ = 40A/us 1500 1000 500 0 0 2 4 6 8 Snubber capacitance CS - (uF) Fig.4 Maximum dependence of ITCM on CS Fig.5 Maximum (limit) transient thermal impedancedouble side cooled 4/12 www.dynexsemi.com DG808BC45 SEMICONDUCTOR 40 3500 35 30 25 20 15 10 2500 VD = 2000V 2000 1500 VD = 1000V 1000 0 0.001 0.01 0.1 0 1 Fig.6 Surge (non-repetitive) on-state current vs time 4500 3000 V D = 3000V 1500 V D = 2000V 1000 500 Conditions: IT = 3000A;Tj = 125oC CS = 4.0uF;RS = 10 Ohms IFGM = 40A;diFG /dt = 40A/us 3000 2500 2000 3000 Fig.7 Turn-on energy vs on-state current Turn-on energy loss EON - (mJ) (mJ) 3500 2000 3500 Conditions: Tj = 125oC; IT = 3000A Cs = 4.0uF Rs = 10 Ohms dIT /dt = 300A/uS dIFG/dt = 40A/uS 4000 1000 On-state current IT -(A) Pulse duration - (s) ON - VD = 3000V 500 5 0 0.0001 Turn-on energy loss E Tj = 125oC; IFGM = 40A Cs = 4.0uF; Rs = 10 Ohms dIT/dt = 300A/uS dIFG/dt = 40A/uS 3000 Turn-on energy loss EON - (mJ) Peak half sine wave on-state current - (kA) Conditions: 2500 VD = 3000V 2000 VD = 2000V 1500 1000 VD = 1000V 500 V D = 1000V 0 0 0 20 40 60 80 100 Peak forward gate current IFGM - (A) Fig.8 Turn-on energy vs forward gate current 0 100 200 300 400 Rate of rise of on-state current diT/dt - (A/us) Fig.9 Turn-on energy vs rate of rise of on-state current 5/12 www.dynexsemi.com DG808BC45 SEMICONDUCTOR 10 5 Turn-on delay time, td, and rise time, tr - (us) Turn-on delay time, td, and rise time, tr - (us) 6 rise time Conditions: Tj = 125oC; IFGM = 40A Cs = 4.0uF; Rs = 10 Ohms diT/dt = 300A/uS Vd = 2000V 4 3 2 delay time 1 Conditions: IT = 3000A 9 7 6 rise time 5 4 3 2 delay time 1 0 0 0 500 1000 1500 2000 2500 0 3000 20 40 60 80 Peak forward gate current IFGM - (A) On-state current IT - (A) Fig.10 Delay and rise time vs on-state current Fig.11 Delay and rise time vs peak forward gate current 14000 13000 Conditions: Tj = 125oC Cs = 4.0uF diGQ/dt = 40A/uS 12000 10000 VDM = 100% VDRM 8000 VDM = 75% VDRM 6000 VDM = 50% VDRM 4000 2000 Turn-off energy per pulse EOFF - (mJ) Turn-off energy per pulse EOFF - (mJ) Tj = 125oC Cs = 4.0uF Rs = 10 Ohms diT/dt = 300A/uS diFG/dt = 40A/uS VD = 3000V 8 12000 VDM = 100% VDRM 11000 10000 VDM = 75% VDRM 9000 Conditions: Tj = 125oC Cs = 4.0uF IT = 3000A 8000 7000 6000 VDM = 50% VDRM 5000 0 0 1000 2000 3000 4000 On-state current, IT - (A) Fig.12 Turn-off energy vs on-state current 20 30 40 50 60 Rate of rise of reverse gate current dIGQ/dt - (A/us) Fig.13 Turn-off energy loss vs rate of rise of reverse gate current 6/12 www.dynexsemi.com DG808BC45 SEMICONDUCTOR 30 CS = 3 uF 12000 10000 CS = 2 uF 8000 6000 Conditions : Tj = 125 oC VDM = VDRM dIGQ/dt = 40 A/us 4000 2000 Conditions : Cs = 4 uF dIGQ/dt = 40 A/us 25 CS = 4uF CS = 2.5 uF Gate storage time Tgs - (us) Turn-off energy per pulse EOFF - (mJ) 14000 Tj = 25 oC 20 15 10 5 0 0 0 1000 2000 3000 4000 0 On-state current IT - (A) 1000 2000 3000 4000 On-state current IT - (A) Fig.14 Turn-off energy vs on-state current Fig.15 Gate storage time vs on-state current 40 2.5 Conditions: IT = 3000A Cs = 4.0uF 30 Tj = 125 oC 25 Tj = 25 oC 15 0 40 50 Rate of rise of reverse gate current dIGQ/dt - (A/us) Fig.16 Gate storage time vs rate of rise of reverse gate current Tj = 25 oC 1 0.5 30 Tj = 125 oC 1.5 20 20 Conditions: Cs = 4.0uF diGQ/dt = 40A/uS 2 Gate fall time tgf - (us) 35 Gate storage time t gs - (us) Tj = 125 oC 0 1000 2000 3000 4000 On-state current IT - (A) Fig.17 Gate fall time vs on-state current 7/12 www.dynexsemi.com DG808BC45 SEMICONDUCTOR 2.5 900 2.3 Peak reverse gate current IGQM - (A) Conditions: IT = 3000A Cs = 4.0uF 2.4 2.2 Gate fall time tgf - (us) 2.1 2 1.9 Tj = 125 oC 1.8 1.7 1.6 1.5 1.4 1.3 1.2 Tj = 25 oC Conditions: Cs = 4.0uF diGQ/dt = 40A/uS 800 700 Tj = 125 oC 600 500 Tj = 25 oC 400 300 1.1 1 20 30 40 50 Rate of rise of reverse gate current dIGQ/dt (A/us) 200 60 0 2000 3000 4000 On-state current IT - (A) Fig.18 Gate fall time vs rate of rise of reverse gate current Fig.19 Peak reverse gate current vs on-state current 850 14000 Conditions: IT = 3000A Cs = 4.0uF 800 Tj = 125oC 775 750 725 Tj = 25oC 700 675 650 Tj = 125oC Conditions: Cs = 4.0uF diGQ/dt = 40A/uS 12000 Turn-off gate charge QGQ - (uC) 825 Peak reverse gate current IGQM - (A) 1000 Tj = 25oC 10000 8000 6000 4000 2000 625 600 20 25 30 35 40 45 50 55 60 65 Rate of rise of reverse gate current dIGQ/dt - (A/us) Fig.20 Reverse gate current vs rate of rise of reverse gate current 0 0 1000 2000 3000 4000 On-state current IT - (A) Fig.21 Turn-off gate charge vs on-state current 8/12 www.dynexsemi.com DG808BC45 SEMICONDUCTOR 15000 1000 Turn-off gate charge Q GQ - (uC) 14000 Rate of rise of off-state voltage dv/dt - (V/us) Conditions: IT = 3000A Cs = 4.0uF 13000 Tj = 125oC 12000 11000 10000 Tj = 25oC 9000 8000 20 30 40 50 Rate of rise of reverse gate current dIGQ/dt - (A/us) Fig.22 Turn-off charge vs rate of rise of reverse gate current Tj = 125oC 900 800 VD = 2250V 700 600 500 400 300 200 VD = 3000V 100 0 0.1 1 10 100 1000 Gate cathode resistance RGK - (Ohms) Fig.23 Rate of rise of off-state voltage vs gate cathode resistance 9/12 www.dynexsemi.com DG808BC45 SEMICONDUCTOR Fig.24 General switching waveforms 10/12 www.dynexsemi.com DG808BC45 SEMICONDUCTOR PACKAGE DETAILS For further package information, please contact Customer Services. All dimensions in mm, unless stated otherwise. DO NOT SCALE. Nominal weight: 1400g Clamping force: 31.5 ±10% Lead coaxial, length: 600mm Package outline type code: C Fig.31 Package outline 11/12 www.dynexsemi.com IMPORTANT INFORMATION: This publication is provided for information only and not for resale. The products and information in this publication are intended for use by appropriately trained technical personnel. Due to the diversity of product applications, the information contained herein is provided as a general guide only and does not constitute any guarantee of suitability for use in a specific application.The user must evaluate the suitability of the product and the completeness of the product data for the application. The user is responsible for product selection and ensuring all safety and any warning requirements are met. Should additional product information be needed please contact Customer Service. 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