DIM600DCM17-A000 DIM600DCM17-A000 IGBT Chopper Module Replaces September 2001, version DS5491-1.1 FEATURES ■ 10µs Short Circuit Withstand ■ High Thermal Cycling Capability ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates DS5491-2.0 March 2002 KEY PARAMETERS VCES (typ) VCE(sat) * (max) IC (max) IC(PK) 1700V 2.7V 600A 1200A *(measured at the power busbars and not the auxiliary terminals) APPLICATIONS ■ Choppers ■ Motor Controllers ■ Traction Drives The Powerline range of modules includes half bridge, chopper, dual and single switch configurations covering voltages from 600V to 3300V and currents up to 2400A. The DIM600DCM17-A000 is a 1700V, n channel enhancement mode insulated gate bipolar transistor (IGBT) chopper module. The IGBT has a wide reverse bias safe operating area (RBSOA) plus full 10µs short circuit withstand. This module is optimised for traction drives and other applications requiring high thermal cycling capability. 5(E1) 1(E1) 2(C2) 3(C1) 4(E2) 6(G1) 7(C1) Fig. 1 Chopper circuit diagram The module incorporates an electrically isolated base plate and low inductance construction enabling circuit designers to optimise circuit layouts and utilise grounded heat sinks for safety. ORDERING INFORMATION Order As: DIM600DCM17-A000 Note: When ordering, please use the whole part number. Outline type code: D (See package details for further information) Fig. 2 Electrical connections - (not to scale) Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com 1/11 DIM600DCM17-A000 ABSOLUTE MAXIMUM RATINGS - PER ARM Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability. Tcase = 25˚C unless stated otherwise Symbol Test Conditions Parameter VCES Collector-emitter voltage VGES Gate-emitter voltage VGE = 0V - Max. Units 1700 V ±20 V Continuous collector current Tcase = 70˚C 600 A IC(PK) Peak collector current 1ms, Tcase = 105˚C 1200 A Pmax Max. transistor power dissipation Tcase = 25˚C, Tj = 150˚C 4630 W Diode I2t value (IGBT arm) VR = 0, tp = 10ms, Tvj = 125˚C 120 kA2s 120 kA2s 4000 V 10 pC IC I2t Diode I2t value (Diode arm) Visol Isolation voltage - per module Commoned terminals to base plate. AC RMS, 1 min, 50Hz QPD Partial discharge - per module IEC1287. V1 = 1500V, V2 = 1100V, 50Hz RMS 2/11 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com DIM600DCM17-A000 THERMAL AND MECHANICAL RATINGS Internal insulation material: Baseplate material: Creepage distance: Clearance: CTI (Critical Tracking Index): Test Conditions Parameter Symbol Rth(j-c) AlN AlSiC 20mm 10mm 175 Thermal resistance - transistor (per arm) Continuous dissipation - Min. Typ. Max. Units - - 27 ˚C/kW junction to case Rth(j-c) Rth(c-h) Tj Tstg - Thermal resistance - diode (IGBT arm) Continuous dissipation - - - 40 ˚C/kW Thermal resistance - diode (Diode arm) junction to case - - 40 ˚C/kW Thermal resistance - case to heatsink Mounting torque 5Nm - - 8 ˚C/kW (per module) (with mounting grease) Junction temperature Transistor - - 150 ˚C Diode - - 125 ˚C –40 - 125 ˚C Mounting - M6 - - 5 Nm Electrical connections - M4 - - 2 Nm Electrical connections - M8 - - 10 Nm - Storage temperature range Screw torque Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com 3/11 DIM600DCM17-A000 ELECTRICAL CHARACTERISTICS Tcase = 25˚C unless stated otherwise. Min. Typ. Max. Units VGE = 0V, VCE = VCES - - 1 mA VGE = 0V, VCE = VCES, Tcase = 125˚C - - 20 mA Gate leakage current VGE = ±20V, VCE = 0V - - 4 µA VGE(TH) Gate threshold voltage IC = 30mA, VGE = VCE 4.5 5.5 6.5 V VCE(sat)† Collector-emitter saturation voltage VGE = 15V, IC = 600A - 2.7 3.2 V VGE = 15V, IC = 600A, , Tcase = 125˚C - 3.4 4.0 V Symbol ICES IGES Parameter Collector cut-off current Test Conditions IF Diode forward current DC - - 600 A IFM Diode maximum forward current tp = 1ms - - 1200 A VF† Diode forward voltage (IGBT arm) IF = 600A - 2.0 2.3 V - 2.0 2.3 V - 2.1 2.4 V - 2.1 2.4 V Diode forward voltage (Diode arm) Diode forward voltage (IGBT arm) IF = 600A, Tcase = 125˚C Diode forward voltage (Diode arm) Cies Input capacitance VCE = 25V, VGE = 0V, f = 1MHz - 45 - nF Cres Reverse transfer capacitance VCE = 25V, VGE = 0V, f = 1MHz - 3.8 - nF LM Module inductance - per arm - - 20 - nH Internal transistor resistance - per arm - - 0.27 - mΩ RINT SCData Short circuit. ISC Tj = 125˚C, VCC = 1000V, I1 2780 - A tp ≤ 10µs, VCE(max) = VCES – L*. di/dt I2 2400 - A IEC 60747-9 Note: † Measured at the power busbars and not the auxiliary terminals) * L is the circuit inductance + LM 4/11 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com DIM600DCM17-A000 ELECTRICAL CHARACTERISTICS Tcase = 25˚C unless stated otherwise Min. Typ. Max. Units IC = 600A - 1200 - ns Fall time VGE = ±15V - 140 - ns EOFF Turn-off energy loss VCE = 900V - 190 - mJ td(on) Turn-on delay time RG(ON) = RG(OFF) = 3.3Ω - 250 - ns L ~ 100nH - 250 - ns Symbol td(off) tf tr Test Conditions Parameter Turn-off delay time Rise time EON Turn-on energy loss - 220 - mJ Qg Gate charge - 6.8 - µC Qrr Diode reverse recovery charge Irr Erec Diode reverse recovery current Diode reverse recovery energy Diode arm IF = 600A, - 370 - µC IGBT arm VR = 50% VCES, - 150 - µC Diode arm dIF/dt = 3000A/µs - 800 - A IGBT arm - 350 - A Diode arm - 250 - mJ IGBT arm - 100 - mJ Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com 5/11 DIM600DCM17-A000 ELECTRICAL CHARACTERISTICS Tcase = 125˚C unless stated otherwise Min. Typ. Max. Units IC = 600A - 1500 - ns Fall time VGE = ±15V - 170 - ns EOFF Turn-off energy loss VCE = 900V - 270 - mJ td(on) Turn-on delay time RG(ON) = RG(OFF) = 3.3Ω - 400 - ns L ~ 100nH - 250 - ns - 350 - mJ Parameter Symbol td(off) tf tr Turn-off delay time Rise time EON Turn-on energy loss Qrr Diode reverse recovery charge Irr Erec 6/11 Test Conditions Diode reverse recovery current Diode reverse recovery energy Diode arm IF = 600A, - 650 - µC IGBT arm VR = 50% VCES, - 250 - µC Diode arm dIF/dt = 3000A/µs - 900 - A IGBT arm - 400 - A Diode arm - 380 - mJ IGBT arm - 150 - mJ Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com DIM600DCM17-A000 TYPICAL CHARACTERISTICS 1200 1200 Common emitter. 1100 Tcase = 25˚C Common emitter. 1100 Tcase = 125˚C Vce is measured at power busbars Vce is measured at power busbars 1000 and not the auxiliary terminals 1000 and not the auxiliary terminals 900 Collector current, IC - (A) Collector current, IC - (A) 900 800 700 600 500 400 300 700 600 500 400 300 VGE = 20V 15V 12V 10V 200 100 0 0 800 0.5 1 1.5 2 2.5 3 3.5 4 VGE = 20V 15V 12V 10V 200 100 4.5 0 5 0 0.5 1 Collector-emitter voltage, Vce - (V) Fig. 3 Typical output characteristics 1600 Conditions: Vce = 900V 350 Tc = 125°C Rg = 3.3Ω 6 Tj = 25˚C Tj = 125˚C 1400 VF is measured at power busbars and not the auxiliary terminals 1200 300 Foward current, IF - (A) Switching energy, Esw - (mJ) 5.5 Fig. 4 Typical output characteristics 400 1000 250 200 150 800 600 400 100 Eoff Eon Erec 50 0 0 1.5 2 2.5 3 3.5 4 4.5 5 Collector-emitter voltage, Vce - (V) 100 200 300 400 500 600 Collector current, IC - (A) 700 200 800 Fig. 5 Typical switching energy vs collector current 0 0 0.5 2.0 1.0 1.5 2.5 Foward voltage, VF - (V) 3.5 Fig. 6 Diode typical forward characteristics Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com 3.0 7/11 DIM600DCM17-A000 2000 800 1800 700 Reverse recovery current, Irr - (A) Collector current, IC - (A) 1600 1400 1200 Chip 1000 800 Module 600 600 500 400 300 200 400 100 Tcase = 125˚C 200 Vge = ±15V Rg(min) = 2.2Ω 0 1200 0 400 800 1600 Collector-emitter voltage, Vce - (V) Tj = 125˚C 0 0 2000 Fig. 7 Reverse bias safe operating area 400 1200 800 Reverse voltage, VR - (V) 1600 2000 Fig. 8 Diode reverse bias safe operating area Tvj = 125˚C, Tc = 70˚C Collector current, IC - (A) 1000 100 IC(max) DC tp = 50µs tp = 100µs tp = 1 ms 10 Transient thermal impedance, Zth (j-c) - (°C/kW ) 100 10000 Freewheel and Antiparallel Diode Transistor 10 1 0.001 1 1 10 100 1000 Collector-emitter voltage, Vce - (V) Fig. 9 Forward bias safe operating area 8/11 10000 0.01 0.1 Pulse width, tp - (s) 1 10 1 2 3 4 Ri (˚C/KW) 0.65865 5.7785 6.2197 15.3534 τi (ms) 0.045 2.8869 21.7141 152.6381 Freewheel and Ri (˚C/KW) 1.5612 5.7426 6.999 25.6068 Antiparallel Diode τi (ms) 0.0063516 1.4746 13.9664 111.7517 IGBT Fig. 10 Transient thermal impedance Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com DIM600DCM17-A000 1400 DC collector current, IC - (A) 1200 1000 800 600 400 200 0 0 20 40 60 80 100 120 Case temperature, Tcase - (˚C) 140 160 Fig. 11 DC current rating vs case temperature Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com 9/11 DIM600DCM17-A000 PACKAGE DETAILS For further package information, please visit our website or contact Customer Services. All dimensions in mm, unless stated otherwise. DO NOT SCALE. Nominal weight: 1050g Module outine type code: D 10/11 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com DIM600DCM17-A000 POWER ASSEMBLY CAPABILITY The Power Assembly group was set up to provide a support service for those customers requiring more than the basic semiconductor, and has developed a flexible range of heatsink and clamping systems in line with advances in device voltages and current capability of our semiconductors. We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The Assembly group continues to offer high quality engineering support dedicated to designing new units to satisfy the growing needs of our customers. Using the latest CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete Solution (PACs). HEATSINKS The Power Assembly group has its own proprietary range of extruded aluminium heatsinks. They have been designed to optimise the performance of Dynex semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on request. For further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or customer service office. http://www.dynexsemi.com e-mail: [email protected] HEADQUARTERS OPERATIONS DYNEX SEMICONDUCTOR LTD Doddington Road, Lincoln. Lincolnshire. LN6 3LF. United Kingdom. Tel: 00-44-(0)1522-500500 Fax: 00-44-(0)1522-500550 CUSTOMER SERVICE Tel: +44 (0)1522 502753 / 502901. Fax: +44 (0)1522 500020 SALES OFFICES Benelux, Italy & Switzerland: Tel: +33 (0)1 64 66 42 17. Fax: +33 (0)1 64 66 42 19. France & Spain: Tel: +33 (0)2 47 55 75 52. Fax: +33 (0)2 47 55 75 59. Germany, Northern Europe & Rest Of World: Tel: +44 (0)1522 502753 / 502901. Fax: +44 (0)1522 500020 North America: Tel: (613) 723-7035. Fax: (613) 723-1518. Toll Free: 1.888.33.DYNEX (39639) / Tel: (949) 733-3005. Fax: (949) 733-2986. These offices are supported by Representatives and Distributors in many countries world-wide. © Dynex Semiconductor 2002 Publication No. DS5491-2 Issue No. 2.0 March 2002 TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRODUCED IN UNITED KINGDOM Datasheet Annotations: Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. The annotations are as follows:Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started. Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change. Advance Information: The product design is complete and final characterisation for volume production is well in hand. No Annotation: The product parameters are fixed and the product is available to datasheet specification. This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company reserves the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such methods of use will be satisfactory in a specific piece of equipment. It is the user's responsibility to fully determine the performance and suitability of any equipment using such information and to ensure that any publication or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury or death to the user. All products and materials are sold and services provided subject to the Company's conditions of sale, which are available on request. All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners. Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com 11/11