ETC DIM800DCM12-A

DIM800DCM12-A000
DIM800DCM12-A000
IGBT Chopper Module
Replaces July 2002 version DS5548-2.0
FEATURES
■
10µs Short Circuit Withstand
■
High Thermal Cycling Capability
■
Non Punch Through Silicon
■
Isolated MMC Base with AlN Substrates
DS5548-
KEY PARAMETERS
VCES
(typ)
VCE(sat) *
(max)
IC
(max)
IC(PK)
1200V
2.2V
800A
1600A
*(measured at the power busbars and not the auxiliary terminals)
APPLICATIONS
■
Inverters
■
Motor Controllers
■
Traction Drives
The Powerline range of modules includes half bridge, dual,
chopper, bi-directional and single switch configurations covering
voltages from 600V to 3300V and currents up to 2400A.
The DIM800DCM12-A000 is a 1200V, n channel
enhancement mode insulated gate bipolar transistor (IGBT)
chopper module. The IGBT has a wide reverse bias safe
operating area (RBSOA) plus full 10µs short circuit withstand.
This module is optimised for applications requiring high thermal
cycling capability.
5(E1)
1(E1)
2(C2)
3(C1)
4(E2)
6(G1)
7(C1)
Fig. 1 Chopper circuit diagram
The module incorporates an electrically isolated base plate
and low inductance construction enabling circuit designers to
optimise circuit layouts and utilise grounded heat sinks for safety.
ORDERING INFORMATION
Order As:
DIM800DCM12-A000
Note: When ordering, please use the whole part number.
Outline type code: D
(See package details for further information)
Fig. 2 Electrical connections - (not to scale)
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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1/10
DIM800DCM12-A000
ABSOLUTE MAXIMUM RATINGS - PER ARM
Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme
conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions
should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability.
Tcase = 25˚C unless stated otherwise
Symbol
Test Conditions
Parameter
VCES
Collector-emitter voltage
VGES
Gate-emitter voltage
VGE = 0V
-
Max.
Units
1200
V
±20
V
Continuous collector current
Tcase = 85˚C
800
A
IC(PK)
Peak collector current
1ms, Tcase = 115˚C
1600
A
Pmax
Max. transistor power dissipation
Tcase = 25˚C, Tj = 150˚C
6940
W
Diode I2t value (IGBT arm)
VR = 0, tp = 10ms, Tvj = 125˚C
100
kA2s
225
kA2s
2500
V
10
PC
IC
I2t
Diode I2t value (Diode arm)
Visol
Isolation voltage - per module
Commoned terminals to base plate. AC RMS, 1 min, 50Hz
QPD
Partial discharge - per module
IEC1287. V1 = 1800V, V2 = 1300V, 50Hz RMS
2/10
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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DIM800DCM12-A000
THERMAL AND MECHANICAL RATINGS
Internal insulation material:
Baseplate material:
Creepage distance:
Clearance:
CTI (Critical Tracking Index):
Test Conditions
Parameter
Symbol
Rth(j-c)
AlN
AlSiC
20mm
10mm
175
Thermal resistance - transistor (per arm)
Continuous dissipation -
Min.
Typ.
Max.
Units
-
-
18
˚C/kW
junction to case
Rth(j-c)
Rth(c-h)
Tj
Tstg
-
Thermal resistance - diode (IGBT arm)
Continuous dissipation -
-
-
40
˚C/kW
Thermal resistance - diode (Diode arm)
junction to case
-
-
26.7
˚C/kW
Thermal resistance - case to heatsink
Mounting torque 5Nm
-
-
8
˚C/kW
(per module)
(with mounting grease)
Junction temperature
Transistor
-
-
150
˚C
Diode
-
-
125
˚C
–40
-
125
˚C
Mounting - M6
-
-
5
Nm
Electrical connections - M4
-
-
2
Nm
Electrical connections - M8
-
-
10
Nm
-
Storage temperature range
Screw torque
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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3/10
DIM800DCM12-A000
ELECTRICAL CHARACTERISTICS
Tcase = 25˚C unless stated otherwise.
Min.
Typ.
Max.
Units
VGE = 0V, VCE = VCES
-
-
1
mA
VGE = 0V, VCE = VCES, Tcase = 125˚C
-
-
25
mA
Gate leakage current
VGE = ±20V, VCE = 0V
-
-
4
µA
VGE(TH)
Gate threshold voltage
IC = 40mA, VGE = VCE
4.5
5.5
6.5
V
VCE(sat)†
Collector-emitter saturation voltage
VGE = 15V, IC = 800A
-
2.2
2.8
V
VGE = 15V, IC = 800A, , Tcase = 125˚C
-
2.6
3.2
V
Symbol
ICES
IGES
Parameter
Collector cut-off current
Test Conditions
IF
Diode forward current
DC
-
-
800
A
IFM
Diode maximum forward current
tp = 1ms
-
-
1600
A
VF†
Diode forward voltage (IGBT arm)
IF = 800A
-
2.1
2.4
V
-
1.8
2.1
V
-
2.1
2.4
V
-
1.7
2.0
V
-
90
-
nF
Diode forward voltage (Diode arm)
Diode forward voltage (IGBT arm)
IF = 800A, Tcase = 125˚C
Diode forward voltage (Diode arm)
VCE = 25V, VGE = 0V, f = 1MHz
Cies
Input capacitance
LM
Module inductance - per arm
-
-
20
-
nH
Internal transistor resistance - per arm
-
-
0.27
-
mΩ
RINT
SCData
Short circuit. ISC
Tj = 125˚C, VCC = 900V,
I1
5500
-
A
tp ≤ 10µs, VCE(max) = VCES – L*. di/dt
I2
4500
-
A
IEC 60747-9
Note:
†
Measured at the power busbars and not the auxiliary terminals)
* L is the circuit inductance + LM
4/10
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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DIM800DCM12-A000
ELECTRICAL CHARACTERISTICS
Tcase = 25˚C unless stated otherwise
Min.
Typ.
Max.
Units
IC = 800A
-
1250
-
ns
Fall time
VGE = ±15V
-
170
-
ns
EOFF
Turn-off energy loss
VCE = 600V
-
130
-
mJ
td(on)
Turn-on delay time
RG(ON) = RG(OFF) = 2.7Ω
-
250
-
ns
L ~ 100nH
-
250
-
ns
Parameter
Symbol
td(off)
tf
tr
Turn-off delay time
Rise time
Test Conditions
EON
Turn-on energy loss
-
80
-
mJ
Qg
Gate charge
-
9
-
µC
Qrr
Diode reverse recovery charge
IF = 800A, VR = 600V,
-
80
-
µC
Irr
Diode reverse current
dIF/dt = 4200A/µs
-
380
-
A
-
30
-
mJ
Min.
Typ.
Max.
Units
IC = 800A
-
1500
-
ns
Fall time
VGE = ±15V
-
200
-
ns
EOFF
Turn-off energy loss
VCE = 600V
-
160
-
mJ
td(on)
Turn-on delay time
RG(ON) = RG(OFF) = 2.7Ω
-
400
-
ns
L ~ 100nH
-
220
-
ns
-
120
-
mJ
IF = 800A, VR = 600V,
-
160
-
µC
dIF/dt = 4000A/µs
-
450
-
A
-
60
-
mJ
EREC
Diode reverse recovery energy
Tcase = 125˚C unless stated otherwise
Parameter
Symbol
td(off)
tf
tr
Turn-off delay time
Rise time
EON
Turn-on energy loss
Qrr
Diode reverse recovery charge
Irr
Diode reverse current
EREC
Diode reverse recovery energy
Test Conditions
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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5/10
DIM800DCM12-A000
TYPICAL CHARACTERISTICS
1600
1600
Common emitter
Tcase = 125˚C
Common emitter
Tcase = 25˚C
1400 Vce is measured at power busbars
1400 Vce is measured at power busbars
1200
1200
and not the auxiliary terminals
Collector current, IC - (A)
Collector current, IC - (A)
and not the auxiliary terminals
1000
1000
800
600
800
600
400
400
VGE = 10V
VGE = 12V
VGE = 15V
VGE = 20V
200
0
0
0.5
1.0
1.5
2.0
2.5
3.0
Collector-emitter voltage, Vce - (V)
3.5
VGE = 10V
VGE = 12V
VGE = 15V
VGE = 20V
200
0
0
4.0
Fig. 3 Typical output characteristics
0.5
1.0 1.5 2.0 2.5 3.0 3.5 4.0
Collector-emitter voltage, Vce - (V)
4.5
5.0
Fig. 4 Typical output characteristics
350
180
Tc = 125˚C,
Vce = 600V,
160 Rg = 2.7
Tc = 125˚C,
Vce = 600V,
IC = 800A
300
140
Switching energy, Esw - (mJ)
250
Switching energy, Esw - (mJ)
120
200
100
80
150
60
100
40
Eon
Eoff
Erec
20
0
Eon
Eoff
Erec
0
0
200
400
600
Collector current, IC - (A)
800
1000
Fig. 5 Typical switching energy vs collector current
6/10
50
2
4
8
6
10
Gate resistance, Rg - (ohms)
12
Fig. 6 Typical switching energy vs gate resistance
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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DIM800DCM12-A000
1600
2000
Tj = 25˚C
Tj = 125˚C
1400
Tcase = 125˚C
Vge =15V
1800 R = 2.7Ohms
g
VF is measured at power busbars
and not the auxiliary terminals
1600
1400
Collector current, IC - (A)
Forward current, IF - (A)
1200
1000
800
600
1200
1000
800
600
400
400
200
200
0
0
0.5
1.0
1.5
2.0
2.5
3.0
0
0
3.5
Module IC
Chip IC
200
Forward voltage, VF - (V)
Fig. 7 Diode typical forward characteristics
400
600
800
1000
1200
Collector emitter voltage, Vce - (V)
1400
Fig. 8 Reverse bias safe operating area
1500
1000
Tj = 125˚C
900
1400
1300
Freewheel Diode
1200
800
1100
DC collector current, IC - (A)
Reverse current, IR - (A)
700
1000
600
Antiparallel Diode
500
400
300
900
800
700
600
500
400
300
200
200
100
0
0
100
200
400
600
800
1000
Reverse voltage, VR - (V)
1200
Fig. 9 Diode reverse bias safe operating area
1400
0
0
20
40
60
80
120
140
160
Fig. 10 DC current rating vs case temperature
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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100
Case temperature, Tcase - (˚C)
7/10
DIM800DCM12-A000
Transient thermal impedance, Zth (j-c) - (°C/kW )
100 Transistor
Antiparallel Diode
Freewheel Diode
10
1
0.1
0.001
IGBT
0.01
0.1
Pulse width, tp - (s)
Ri (˚C/KW)
ti (ms)
Antiparallel Diode Ri (˚C/KW)
ti (ms)
Freewheel Diode Ri (˚C/KW)
ti (ms)
1
0.56
0.12
1.23
0.11
0.82
0.11
2
4.00
3.89
9.26
4.24
6.17
4.24
1
3
5.64
47.15
12.96
48.75
8.64
48.75
10
4
7.81
257.21
16.53
256.75
11.02
256.75
Fig. 11 Transient thermal impedance
8/10
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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DIM800DCM12-A000
PACKAGE DETAILS
For further package information, please visit our website or contact Customer Services. All dimensions in mm, unless stated otherwise.
DO NOT SCALE.
Nominal weight: 1050g
Module outine type code: D
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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9/10
POWER ASSEMBLY CAPABILITY
The Power Assembly group was set up to provide a support service for those customers requiring more than the basic
semiconductor, and has developed a flexible range of heatsink and clamping systems in line with advances in device voltages
and current capability of our semiconductors.
We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today.
The Assembly group offers high quality engineering support dedicated to designing new units to satisfy the growing needs of
our customers.
Using the latest CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete
Solution (PACs).
HEATSINKS
The Power Assembly group has its own proprietary range of extruded aluminium heatsinks which have been designed to
optimise the performance of Dynex semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow
rates) is available on request.
For further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or
Customer Services.
http://www.dynexsemi.com
e-mail: [email protected]
HEADQUARTERS OPERATIONS
DYNEX SEMICONDUCTOR LTD
Doddington Road, Lincoln.
Lincolnshire. LN6 3LF. United Kingdom.
Tel: +44-(0)1522-500500
Fax: +44-(0)1522-500550
CUSTOMER SERVICE
Tel: +44 (0)1522 502753 / 502901. Fax: +44 (0)1522 500020
SALES OFFICES
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Fax: +44 (0)1522 500020
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These offices are supported by Representatives and Distributors in many countries world-wide.
© Dynex Semiconductor 2003 TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRODUCED IN
UNITED KINGDOM
Datasheet Annotations:
Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. The annotations are as follows:Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started.
Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change.
Advance Information: The product design is complete and final characterisation for volume production is well in hand.
No Annotation: The product parameters are fixed and the product is available to datasheet specification.
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