DYNEX GDU90

GDU 90-20421
GDU 90-20421
Gate Drive Unit
Replaces March 1998 version, DS4565-2.1
DS4565-3.0 January 2000
This datasheet should be used in conjunction with the application note AN4571, GDU9X-XXXXX Series, Gate Drive Unit.
APPLICATIONS
KEY PARAMETERS
IFGM
IG(ON)
dIGQ/dt
■ Used with Gate Turn-Off Thyristors in high current
switching applications
30A
7A
40A/µs
CONDITIONS - (UNLESS STATED OTHERWISE)
V1 = +5V
V2 = +15V
V3 = -15V
Test circuit GTO
DG646BH
GDU connection to GTO
500mm CO - AX cable type RC5327230
Test circuit emitter and gate drive emitter
Hewlett Packard versatile link HFBR1524
Test circuit emitter current
30mA
Test circuit receiver and gate drive receiver
Hewlett Packard versatile link HFBR2524
ELECTRICAL CHARACTERISTICS
Symbol
Conditions
Parameter
Min.
Typ.
Max.
Units
IV1
+5V PSU current
700Hz, 50% duty cycle
-
-
3.80
A
IV2
+15V PSU current
700Hz
-
-
0.73
A
IV3
-15V PSU current
700Hz, IT = 2000A
GTO Tj = 125˚C
-
-
9.20
A
V1(Min)
+5V PSU minimum
-
3.8
-
-
V
V2(Min)
+15V PSU minimum
-
14.0
-
-
V
V3(Min)
-15V PSU minimum
-
14.0
-
-
V
IFGM
Peak forward gate current
-
30
-
-
A
IG(ON)
On-state gate current
-
-
7
-
A
dIFG/dt
Rate of rise of positive gate current
Measured 10 - 75% IFGM
-
30
-
A/µs
dIGQ/dt
Rate of rise of negative gate current
IT = 2000A, 90% IG(ON) - 50% IGQM
-
40
-
A/µs
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GDU 90-20421
TIMING CHARACTERISTICS
Parameter
Symbol
t1*†
No response pulse width of
input signal
Conditions
Min.
Typ.
Max.
Units
Adjustable by R81 + R82
2
-
3
µs
t2
Delay time emitter
current to receiver o/p
-
0.2
-
0.4
µs
t3*†
Turn-on delay emitter
current to 10% IFGM
-
5.0
-
5.8
µs
t4
IFGM pulse width
-
-
25
-
µs
t5*
Minimum on time
10% IFGM to 90% IG(ON)
Adjustable by R37
80
-
110
µs
t6
Receiver storage time
-
0.8
-
1.2
µs
t7
Turn-off delay.
Emitter current to 90% IG(ON)
-
1.5
-
2.3
µs
t8*
Minimum off time
90% IG(ON) to 10% IFGM
Adjustable by R38
80
-
110
µs
t9
Delay time
Gate volts to o/p emitter current
-
-
0.2
-
µs
t10
Turn-off delay
Gate volts to test receiver o/p
-
-
0.8
-
µs
t11
Storage time
Gate volts to o/p emitter current
Measured at low IGQM
-
0.11
-
µs
t12
Turn-on delay
Gate volts to test receiver o/p
Measured at low IGQM
-
0.31
-
µs
* t1,t3,t5,t8 are factory settings.
†
Adjustment of t1 alters t3.
1. Varies with IGQM due to gate lead impedance.
t1
Test circuit
emitter current
t2
t6
10µs
t7
dIFG/dt
10%
t4
t3
QGQT
t5
Min. ON time
dIGQ/dt
t8
0V
Gate voltage
Control card emitter current
Test circuit receiver output
2/4
90% IG(ON)
IGQM
Gate current
IFGM
Gate Drive Unit Waveforms
Control card
receiver output
Min. OFF
-8V
-8V
t9
t11
t10
t12
GDU 90-20421
OUTLINE
Clearance underneath P.C.B. for
mounting nuts etc.
13
0V
V3
V2
V1
5
10
200 centres
220
I/P
Gate
Fibre optics
Cathode
O/P
4 holes
Ø4.4
48
253 centres
279
Weight: 1.89Kg
All dimensions in mm, unless stated otherwise. DO NOT SCALE.
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GDU 90-20421
POWER ASSEMBLY CAPABILITY
The Power Assembly group was set up to provide a support service for those customers requiring more than the basic semiconductor, and has developed a flexible range of heatsink / clamping systems in line with advances in device types and the voltage and
current capability of our semiconductors.
We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The
Assembly group continues to offer high quality engineering support dedicated to designing new units to satisfy the growing needs of
our customers.
Using the up to date CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete
solution (PACs).
DEVICE CLAMPS
Disc devices require the correct clamping force to ensure their safe operation. The PACs range offers a varied selection of preloaded clamps to suit all of our manufactured devices. This include cube clamps for single side cooling of ‘T’ 22mm
Clamps are available for single or double side cooling, with high insulation versions for high voltage assemblies.
Please refer to our application note on device clamping, AN4839
HEATSINKS
Power Assembly has it’s own proprietary range of extruded aluminium heatsinks. They have been designed to optimise the
performance or our semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on
request.
For further information on device clamps, heatsinks and assemblies, please contact your nearest Sales Representative or the
factory.
http://www.dynexsemi.com
e-mail: [email protected]
HEADQUARTERS OPERATIONS
DYNEX SEMICONDUCTOR LTD
Doddington Road, Lincoln.
Lincolnshire. LN6 3LF. United Kingdom.
Tel: 00-44-(0)1522-500500
Fax: 00-44-(0)1522-500550
DYNEX POWER INC.
Unit 7 - 58 Antares Drive,
Nepean, Ontario, Canada K2E 7W6.
Tel: 613.723.7035
Fax: 613.723.1518
Toll Free: 1.888.33.DYNEX (39639)
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SALES OFFICES
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These offices are supported by Representatives and Distributors in many countries world-wide.
© Dynex Semiconductor 2000 Publication No. DS4565-3 Issue No. 3.0 January 2000
TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRINTED IN UNITED KINGDOM
Datasheet Annotations:
Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. The annotations are as follows:Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started.
Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change.
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No Annotation: The product parameters are fixed and the product is available to datasheet specification.
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