DG858BW45 DG858BW45 Gate Turn-off Thyristor Replaces July 1999 version, DS4096-3.0 DS4096-4.0 January 2000 FEATURES KEY PARAMETERS 3000A ITCM VDRM 4500V 1180A IT(AV) dVD/dt 1000V/µs 300A/µs diT/dt ● Double Side Cooling ● High Reliability In Service ● High Voltage Capability ● Fault Protection Without Fuses ● High Surge Current Capability ● Turn-off Capability Allows Reduction In Equipment Size And Weight. Low Noise Emission Reduces Acoustic Cladding Necessary For Environmental Requirements APPLICATIONS ● Variable speed A.C. motor drive inverters (VSD-AC) ● Uninterruptable Power Supplies ● High Voltage Converters ● Choppers ● Welding ● Induction Heating ● DC/DC Converters Package outline type code: W. See Package Details for further information. Figure 1. Package outline VOLTAGE RATINGS Type Number Repetitive Peak Off-state Voltage VDRM V Repetitive Peak Reverse Voltage VRRM V 4500 16 DG858BW45 Conditions Tvj = 125oC, IDM = 100mA, IRRM = 50mA CURRENT RATINGS Symbol Parameter Conditions Max. Units ITCM Repetitive peak controllable on-state current VD = 66% VDRM, Tj = 125oC, diGQ/dt = 40A/µs, Cs = 3µF 3000 A IT(AV) Mean on-state current THS = 80oC. Double side cooled, half sine 50Hz 1180 A IT(RMS) RMS on-state current THS = 80oC. Double side cooled, half sine 50Hz 1850 A 1/19 DG858BW45 SURGE RATINGS Symbol Parameter Conditions Max. Units ITSM Surge (non-repetitive) on-state current 10ms half sine. Tj = 125oC 20.0 kA I2 t I2t for fusing 10ms half sine. Tj =125oC 2.0 x 106 A2s Critical rate of rise of on-state current VD = 3000V, IT = 3000A, Tj = 125oC, IFG > 40A, Rise time > 1.0µs 300 A/µs To 66% VDRM; RGK ≤ 1.5Ω, Tj = 125oC 130 V/µs To 66% VDRM; VRG = -2V, Tj = 125oC 1000 V/µs 200 nH diT/dt dVD/dt LS Rate of rise of off-state voltage Peak stray inductance in snubber circuit IT = 3000A, VD = VDRM,-T - j = 125˚C, dI/GQ = 40A/ µs, Cs = 3.0µF GATE RATINGS Symbol Parameter VRGM Peak reverse gate voltage IFGM Peak forward gate current Conditions Min. Max. Units This value maybe exceeded during turn-off - 16 V 20 100 A PFG(AV) Average forward gate power - 20 W PRGM Peak reverse gate power - 24 kW diGQ/dt Rate of rise of reverse gate current 20 60 A/µs tON(min) Minimum permissable on time 50 - µs tOFF(min) Minimum permissable off time 100 - µs Min. Max. Units Double side cooled - 0.011 o C/W Anode side cooled - 0.017 o C/W Cathode side cooled - 0.03 o C/W - 0.0021 o C/W THERMAL AND MECHANICAL DATA Symbol Rth(j-hs) Parameter DC thermal resistance - junction to heatsink surface Conditions Clamping force 40.0kN With mounting compound Rth(c-hs) Contact thermal resistance Tvj Virtual junction temperature -40 125 o Operating junction/storage temperature range -40 125 o Clamping force 36.0 44.0 kN TOP/Tstg 2/19 per contact C C DG858BW45 CHARACTERISTICS Tj = 125oC unless stated otherwise Conditions Parameter Symbol Min. Max. Units VTM On-state voltage At 4000A peak, IG(ON) = 10A d.c. - 4.0 V IDM Peak off-state current VDRM = 4500V, VRG = 0V - 100 mA IRRM Peak reverse current At VRRM - 50 mA VGT Gate trigger voltage VD = 24V, IT = 100A, Tj = 25oC - 1.2 V Gate trigger current VD = 24V, IT = 100A, Tj = 25oC - 4.0 A IRGM Reverse gate cathode current VRGM = 16V, No gate/cathode resistor - 50 mA EON Turn-on energy VD = 2000V - 2700 mJ td Delay time IT = 3000A, dIT/dt = 300A/µs - 2.0 µs tr Rise time IFG = 40A, rise time < 1.0µs - 6.0 µs Turn-off energy - 13500 mJ tgs Storage time - 25.0 µs tgf Fall time IT = 3000A, VDM = VDRM - 2.5 µs tgq Gate controlled turn-off time Snubber Cap Cs = 3.0µF, - 27.5 µs QGQ Turn-off gate charge diGQ/dt = 40A/µs - 12000 µC QGQT Total turn-off gate charge - 24000 µC IGQM Peak reverse gate current - 950 A IGT EOFF 3/19 DG858BW45 2.5 12.5 2.0 10.0 1.5 7.5 1.0 5.0 Gate trigger current IGT - (A) Gate trigger voltage VGT - (V) CURVES VGT 2.5 0.5 IGT 0 -50 -25 75 0 25 50 100 Junction temperature Tj - (˚C) 125 0 150 Figure 2. Maximum gate trigger voltage/current vs junction temperature Instantaneous on-state current IT - (A) 4000 Measured under pulse conditions. IG(ON) = 10A Half sine wave 10ms 3000 Tj = 25˚C Tj = 125˚C 2000 1000 0 1.0 1.5 2.0 2.5 3.0 3.5 Instantaneous on-state voltage VTM - (V) Figure 3. On-state characteristics 4/19 4.0 DG858BW45 Maximum permissible turn-off current ITCM - (A) 4000 Conditions: T = 125˚C, 3500 Vj = V DM DRM dIGQ/dt = 40A/µs 3000 2500 2000 1500 1000 0 4.0 5.0 1.0 2.0 3.0 Snubber capacitance Cs - (µF) 6.0 Figure 4. Maximum dependence of ITCM on Cs dc 0.010 0.005 0 0.001 0.01 0.1 Time - (s) 10 1.0 100 Figure 5. Maximum (limit) transient thermal impedance - double side cooled 50 Peak half sine wave on-state current - (kA) Thermal impedance - ˚C/W 0.015 40 30 20 10 0 0.0001 0.001 0.01 Pulse duration - (s) 0.1 Figure 6. Surge (non-repetitive) on-state current vs time 1.0 5/19 DG858BW45 5500 5000 dc Conditions; IG(ON) = 10A Mean on-state power dissipation - (W) 4500 180˚ 4000 120˚ 3500 3000 60˚ 2500 30˚ 2000 1500 1000 500 0 0 500 1000 1500 Mean on-state current IT(AV) - (A) 60 70 80 90 100 110 120 130 Maximum permissible case temperature - (˚C) Figure 7. Steady state rectangular wave conduction loss - double side cooled Mean on-state power dissipation- (W) 4000 180˚ Conditions; IG(ON) = 10A 3500 120˚ 90˚ 3000 60˚ 2500 30˚ 2000 1500 1000 500 0 0 200 400 600 800 1000 1200 Mean on-state current IT(AV) - (A) 80 90 100 110 120 130 Maximum permissible case temperature - (˚C) Figure 8. Steady state sinusoidal wave conduction loss - double side cooled 6/19 DG858BW45 Conditions: T = 25˚C 4000 j IFGM = 40A Cs = 3µF 3500 Rs = 10 Ohms dIT/dt = 300A/µs /dt = 40A/µs dI FG 3000 VD = 3000V 2500 VD = 2000V 2000 1500 VD = 1000V 1000 500 0 0 500 1000 1500 2000 On-state current IT - (A) 2500 3000 Figure 9. Turn-on energy vs on-state current 8000 Conditions: IT = 3000A, Tj = 25˚C, Cs = 3.0µF, Rs = 10 Ohms dIT/dt = 300A/µs, dIFG/dt = 40A/µs 7000 Turn-on energy loss EON - (mJ) Turn-on energy loss EON - (mJ) 4500 6000 5000 4000 VD = 3000V 3000 2000 VD = 2000V 1000 VD = 1000V 0 0 10 20 30 40 50 60 70 Peak forward gate current IFGM- (A) 80 Figure 10. Turn-on energy vs peak forward gate current 7/19 DG858BW45 Turn-on energy loss EON - (mJ) 4500 VD = 3000V Conditions: Tj = 125˚C 4000 IFGM = 40A Cs = 3.0µF 3500 Rs = 10 Ohms dIT/dt = 300A/µs dI FG/dt = 40A/µs 3000 VD = 2000V 2500 2000 1500 VD = 1000V 1000 500 0 0 500 1000 1500 2000 On-state current IT - (A) 2500 3000 Figure 11. Turn-on energy vs on-state current 10000 8000 7000 Turn-on energy loss EON - (mJ) 9000 Turn-on energy loss EON - (mJ) 5000 Conditions: IT = 3000A Tj = 125˚C Cs = 3.0µF Rs = 10 Ohms dIT/dt = 300A/µs dIFG/dt = 40A/µs 6000 5000 4000 VD = 2250V 3000 3000 1500 VD = 1000V 1000 1000 VD = 1000V 500 10 20 30 40 50 60 70 Peak forward gate current IFGM - (A) Figure 12. Turn-on energy vs peak forward gate current 80 VD = 2000V 2000 VD = 2000V 0 VD = 3000V 2500 2000 0 8/19 Conditions: I = 3000A 4500 T Tj = 125˚C Cs = 3.0µF 4000 Rs = 10 Ohms IFGM = 40A 3500 dIFG/dt = 40A/µs 0 50 100 150 200 250 300 350 Rate of rise of on-state current dIT/dt - (A/µs) Figure 13. Turn-on energy vs rate of rise of on-state current 7.0 6.0 tr 5.0 Conditions: Tj = 125˚C, IFGM = 40A Cs = 3.0µF, Rs = 10 Ohms, dIT/dt = 300A/µs, VD = 2000V 4.0 3.0 td 2.0 1.0 0 500 1000 1500 2000 On-state current IT - (A) 2500 3000 Fig.ure 14. Delay and rise time vs on-state current 12.0 Conditions: IT = 3000A Tj = 125˚C Cs = 3.0µF Rs = 10 Ohms dIT/dt = 300A/µs dIFG/dt = 40A/µs VD = 2000V 11.0 10.0 Turn-on delay time and rise time - (µs) Turn-on delay time and rise time - (µs) DG858BW45 9.0 8.0 7.0 6.0 5.0 tr 4.0 3.0 2.0 td 1.0 0 10 20 30 40 50 60 70 Peak forward gate current IFGM - (A) 80 Figure 15. Delay and rise time vs peak forward gate current 9/19 DG858BW45 Turn-off energy loss EOFF - (mJ) 9000 Conditions: T = 25˚C 8000 Cjs = 3.0µF dIGQ/dt = 40A/µs 7000 A B 6000 C 5000 4000 3000 2000 A: VDM = 100% VDRM B: VDM = 75% VDRM C: VDM = 50% VDRM 1000 0 0 500 1000 1500 2000 On-state current IT - (A) 2500 Figure 16. Turn-off energy loss vs on-state current 9000 Turn-off energy per pulse EOFF - (mJ) Conditions: I = 3000A 8500 T Tj = 25˚C Cs = 3.0µF 8000 7500 VDM = 100% VDRM VDM = 75% VDRM 7000 6500 6000 VDM = 50% VDRM 5500 5000 4500 4000 20 25 30 35 40 45 50 55 60 Rate of rise of reverse gate current dIGQ/dt- (A/µs) Figure 17. Turn-off energy vs rate of rise of reverse gate current 10/19 3000 DG858BW45 14000 A B 8000 C 6000 4000 A: VDM = 100% VDRM B: VDM = 75% VDRM C: VDM = 50% VDRM 2000 0 0 500 1000 1500 2000 On-state current IT - (A) 2500 3000 Figure 18. Turn-off energy vs on-state current 14000 Turn-off energy per pulse EOFF - (mJ) Turn-off energy loss EOFF - (mJ) Conditions: T = 125˚C 12000 Cjs = 3.0µF dIGQ/dt = 40A/µs 10000 13000 VDM = 100% VDRM 12000 11000 VDM = 75% VDRM 10000 9000 Conditions: IT = 3000A Tj = 125˚C Cs = 3.0µF 8000 7000 VDM = 50% VDRM 6000 20 25 30 35 40 45 50 55 60 Rate of rise of reverse gate current dIGQ/dt- (A/µs) Figure 19. Turn-off energy loss vs rate of rise of reverse gate current 11/19 DG858BW45 Turn-off energy per pulse EOFF - (mJ) 16000 Conditions: T = 125˚C 14000 j VDM = VDRM dIGQ/dt = 40A/µs 12000 Cs = 3.0µF Cs = 4.0µF Cs = 2.5µF Cs = 2.0µF 10000 8000 6000 4000 2000 0 0 500 1000 1500 2000 On-state current IT - (A) 2500 3000 Figure 20. Turn-off energy vs on-state current 25.0 Conditions: Cs = 3.0µF 22.5 dI /dt = 40A/µs GQ Tj = 125˚C Tj = 25˚C Gate storage time tgs - (µs) 20.0 17.5 15.0 12.5 10.0 7.5 5.0 2.5 0 500 1000 1500 2000 On-state current IT - (A) 2500 Figure 21. Gate storage time vs on-state current 12/19 3000 3500 DG858BW45 40.0 Conditions: IT = 3000A Cs = 3.0µF Gate storage time tgs - (µs) 35.0 30.0 25.0 Tj = 125˚C 20.0 Tj = 25˚C 15.0 20 25 30 35 40 45 50 55 60 Rate of rise of reverse gate current dIGQ/dt - (A/µs) Figure 22. Gate storage time vs rate of rise of reverse gate current Gate fall time tgf - (µs) 3.0 Conditions: Cs = 3.0µF dIGQ/dt = 40A/µs Tj = 125˚C 2.0 Tj = 25˚C 1.0 0 0 500 1000 1500 2000 On-state current IT - (A) 2500 3000 Figure 23. Gate fall time vs on-state current 13/19 DG858BW45 3.0 Conditions: IT = 3000A Cs = 3.0µF Gate fall time tgf - (µs) 2.5 Tj = 125˚C 2.0 Tj = 25˚C 1.5 1.0 20 25 30 35 40 45 50 55 60 Rate of rise of reverse gate current dIGQ/dt - (A/µs) Figure 24. Gate fall time vs rate of rise of reverse gate current Peak reverse gate current IGQM - (A) 1000 Conditions: C = 3.0µF 900 s dIGQ/dt = 40A/µs Tj = 125˚C 800 Tj = 25˚C 700 600 500 400 300 200 0 500 1000 1500 2000 On-state current IT - (A) 2500 Figure 25. Peak reverse gate current vs on-state current 14/19 3000 DG858BW45 1000 Peak reverse gate current IGQM - (A) Conditions: IT = 3000A CS = 3.0µF Tj = 125˚C 900 Tj = 25˚C 800 700 600 20 25 30 35 40 45 50 55 60 Rate of rise of reverse gate current dIGQ/dt - (A/µs) Figure 26. Reverse gate current vs rate of rise of reverse gate current Total turn-off gate charge QGQ - (µC) 12000 Conditions: C = 3.0µF 10000 dIS /dt = 40A/µs GQ Tj = 125˚C 8000 Tj = 25˚C 6000 4000 2000 0 0 500 1000 1500 2000 On-state current IT - (A) 2500 3000 Figure 27. Turn-off gate charge vs on-state current 15/19 DG858BW45 15000 Conditions: IT = 3000A CS = 3.0µF Turn-off gate charge QGQ - (µC) 14000 13000 12000 Tj = 125˚C 11000 10000 9000 Tj = 25˚C 8000 7000 20 25 30 35 40 45 50 55 60 Rate of rise of reverse gate current dIGQ/dt - (A/µs) Rate of rise of off-state voltage dV/dt - (V/µs) Figure 28. Turn-off gate charge vs rate of rise of reverse gate current 1000 500 0 0.1 Tj = 125˚C VD = 2250V VD = 3000V 1.0 10 100 Gate cathode resistance RGK - (Ohms) 1000 Figure 29. Rate of rise of off-state voltage vs gate cathode resistance 16/19 Anode voltage and current DG858BW45 0.9VD 0.9IT dVD/dt VD VD IT td ITAIL VDP 0.1VD VDM tgs tr tgf tgt tgq dIFG/dt Gate voltage and current IFG VFG IG(ON) 0.1IFG 0.1IGQ tw1 VRG QGQ 0.5IGQM IGQM V(RG)BR Recommended gate conditions: ITCM = 3000A IFG = 40A IG(ON) = 10A d.c. tw1(min) = 20µs IGQM = 950A diGQ/dt = 40A/µs QGQ = 12000µC VRG(min) = 2V VRG(max) = 16V These are recommended Dynex Semiconductor conditions. Other conditions are permitted Figure 30. General switching waveforms 17/19 DG858BW45 PACKAGE DETAILS For further package information, please contact your local Customer Service Centre. All dimensions in mm, unless stated otherwise. DO NOT SCALE. 2 holes Ø3.6 x 2.0 deep (One in each electrode) 12˚ Auxiliary cathode connector Ø3.0 Gate connector Ø3.0 Anode 27.0 25.5 Ø120 max Ø84.6 nom Ø84.6 nom 72 max Cathode Nominal weight: 1700g Clamping force: 40kN ±10% Lead length: 600mm Package outine type code: W ASSOCIATED PUBLICATIONS Title Application Note Number Calculating the junction temperature or power semiconductors AN4506 GTO gate drive units AN4571 Recommendations for clamping power semiconductors AN4839 Use of V , r on-state characteristic AN5001 Impoved gate drive for GTO series connections AN5177 TO 18/19 T DG858BW45 POWER ASSEMBLY CAPABILITY The Power Assembly group was set up to provide a support service for those customers requiring more than the basic semiconductor, and has developed a flexible range of heatsink / clamping systems in line with advances in device types and the voltage and current capability of our semiconductors. We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The Assembly group continues to offer high quality engineering support dedicated to designing new units to satisfy the growing needs of our customers. Using the up to date CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete solution (PACs). DEVICE CLAMPS Disc devices require the correct clamping force to ensure their safe operation. The PACs range offers a varied selection of preloaded clamps to suit all of our manufactured devices. This include cube clamps for single side cooling of ‘T’ 22mm Clamps are available for single or double side cooling, with high insulation versions for high voltage assemblies. Please refer to our application note on device clamping, AN4839 HEATSINKS Power Assembly has it’s own proprietary range of extruded aluminium heatsinks. They have been designed to optimise the performance or our semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on request. For further information on device clamps, heatsinks and assemblies, please contact your nearest Sales Representative or the factory. http://www.dynexsemi.com e-mail: [email protected] HEADQUARTERS OPERATIONS DYNEX SEMICONDUCTOR LTD Doddington Road, Lincoln. Lincolnshire. LN6 3LF. United Kingdom. Tel: 00-44-(0)1522-500500 Fax: 00-44-(0)1522-500550 DYNEX POWER INC. Unit 7 - 58 Antares Drive, Nepean, Ontario, Canada K2E 7W6. Tel: 613.723.7035 Fax: 613.723.1518 Toll Free: 1.888.33.DYNEX (39639) CUSTOMER SERVICE CENTRES France, Benelux, Italy and Spain Tel: +33 (0)1 69 18 90 00. Fax: +33 (0)1 64 46 54 50 North America Tel: 011-800-5554-5554. Fax: 011-800-5444-5444 UK, Germany, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020 SALES OFFICES France, Benelux, Italy and Spain Tel: +33 (0)1 69 18 90 00. Fax: +33 (0)1 64 46 54 50 Germany Tel: 07351 827723 North America Tel: (613) 723-7035. Fax: (613) 723-1518. Toll Free: 1.888.33.DYNEX (39639) / Tel: (831) 440-1988. Fax: (831) 440-1989 / Tel: (949) 733-3005. Fax: (949) 733-2986. UK, Germany, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020 These offices are supported by Representatives and Distributors in many countries world-wide. © Dynex Semiconductor 2000 Publication No. DS4096-4 Issue No. 4.0 January 2000 TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRINTED IN UNITED KINGDOM Datasheet Annotations: Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. The annotations are as follows:Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started. Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change. Advance Information: The product design is complete and final characterisation for volume production is well in hand. No Annotation: The product parameters are fixed and the product is available to datasheet specification. This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company reserves the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such methods of use will be satisfactory in a specific piece of equipment. It is the user's responsibility to fully determine the performance and suitability of any equipment using such information and to ensure that any publication or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury or death to the user. All products and materials are sold and services provided subject to the Company's conditions of sale, which are available on request. All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners. 19/19