DG406BP25 DG406BP25 Gate Turn-off Thyristor Replaces March 1998 version, DS4090-2.3 DS4090-3.0 January 2000 APPLICATIONS KEY PARAMETERS 1000A ITCM VDRM 2500V 400A IT(AV) dVD/dt 1000V/µs 300A/µs diT/dt ■ Variable speed A.C. motor drive inverters (VSD-AC). ■ Uninterruptable Power Supplies ■ High Voltage Converters. ■ Choppers. ■ Welding. ■ Induction Heating. ■ DC/DC Converters. FEATURES ■ Double Side Cooling. ■ High Reliability In Service. ■ High Voltage Capability. ■ Fault Protection Without Fuses. ■ High Surge Current Capability. ■ Turn-off Capability Allows Reduction In Equipment Size And Weight. Low Noise Emission Reduces Acoustic Cladding Necessary For Environmental Requirements. Outline type code: P. See Package Details for further information. VOLTAGE RATINGS Type Number DG406BP25 Repetitive Peak Off-state Voltage Repetitive Peak Reverse Voltage VDRM VRRM V V 2500 16 Conditions Tvj = 125oC, IDM = 50mA, IRRM = 50mA CURRENT RATINGS Symbol Parameter Conditions Max. Units 1000 A ITCM Repetitive peak controllable on-state current VD = VDRM, Tj = 125oC, diGQ/dt = 30A/µs, Cs = 1.0µF IT(AV) Mean on-state current THS = 80oC. Double side cooled. Half sine 50Hz. 400 A IT(RMS) RMS on-state current THS = 80oC. Double side cooled. Half sine 50Hz. 630 A 1/19 DG406BP25 SURGE RATINGS Symbol Parameter Conditions Max. Units ITSM Surge (non-repetitive) on-state current 10ms half sine. Tj = 125oC 8.0 kA I2t I2t for fusing 10ms half sine. Tj =125oC 0.32 x 106 A2s Critical rate of rise of on-state current VD = 2000V, IT = 1000A, Tj = 125oC, IFG ≥ 30A, Rise time > 1.0µs 300 A/µs To 66% VDRM; RGK ≤ 1.5Ω, Tj = 125oC 500 V/µs To 66% VDRM; VRG = -2V, Tj = 125oC 1000 V/µs IT = 1000A, VD = VDRM, Tj = 125oC, diGQ/dt = 30A/µs, Cs = 1.0µF 200 nH diT/dt dVD/dt LS Rate of rise of off-state voltage Peak stray inductance in snubber circuit GATE RATINGS Symbol Parameter VRGM Peak reverse gate voltage IFGM Peak forward gate current Conditions This value maybe exceeded during turn-off Min. Max. Units - 16 V 20 70 A PFG(AV) Average forward gate power - 10 W PRGM Peak reverse gate power - 15 kW diGQ/dt Rate of rise of reverse gate current 15 60 A/µs tON(min) Minimum permissable on time 20 - µs tOFF(min) Minimum permissable off time 100 - µs Min. Max. Units Double side cooled - 0.041 o Anode side cooled - 0.07 o Cathode side cooled - 0.1 o - 0.009 o - 125 o Operating junction/storage temperature range -40 125 o Clamping force 11.0 15.0 THERMAL RATINGS AND MECHANICAL DATA Symbol Rth(j-hs) Parameter DC thermal resistance - junction to heatsink surface Rth(c-hs) Contact thermal resistance Tvj Virtual junction temperature TOP/Tstg - 2/19 Conditions Clamping force 12.0kN With mounting compound per contact C/W C/W C/W C/W C C kN DG406BP25 CHARACTERISTICS Tj = 125oC unless stated otherwise Symbol Conditions Parameter Min. Max. Units VTM On-state voltage At 1000A peak, IG(ON) = 4A d.c. - 2.5 V IDM Peak off-state current VDRM = 2500V, VRG = 0V - 50 mA IRRM Peak reverse current At VRRM - 50 mA VGT Gate trigger voltage VD = 24V, IT = 100A, Tj = 25oC - 1.0 V IGT Gate trigger current VD = 24V, IT = 100A, Tj = 25oC - 1.5 A IRGM Reverse gate cathode current VRGM = 16V, No gate/cathode resistor - 50 mA EON Turn-on energy VD = 2000V - 1040 mJ td Delay time IT = 1000A, dIT/dt = 300A/µs - 1.5 µs tr Rise time IFG = 30A, rise time ≤ 1.0µs - 3.0 µs Turn-off energy - 2300 mJ tgs Storage time - 14.0 µs tgf Fall time IT = 1000A, VDM = 2500V - 1.5 µs tgq Gate controlled turn-off time Snubber Cap Cs = 1.0µF, - 15.5 µs QGQ Turn-off gate charge diGQ/dt = 30A/µs - 3000 µC QGQT Total turn-off gate charge - 6000 µC IGQM Peak reverse gate current - 420 A EOFF 3/19 DG406BP25 2.0 4.0 1.5 3.0 1.0 2.0 VGT 0.5 1.0 Gate trigger current IGT - (A) Gate trigger voltage VGT - (V) CURVES IGT 0 -50 -25 0 25 50 75 100 Junction temperature Tj - (˚C) 125 0 150 Instantaneous on-state current ITM - (kA) 4.0 Measured under pulse conditions. IG(ON) = 4.0A Half sine wave 10ms 3.0 1.5 Tj = 25˚C Tj = 125˚C 1.0 2.0 0.5 1.0 0 1.0 2.0 3.0 4.0 Instantaneous on-state voltage VTM - (V) Fig.2 On-state characteristics 4/19 Maximum permissible turn-off current ITCM - (kA) Fig.1 Maximum gate trigger voltage/current vs junction temperature 5.0 Conditions: Tj = 125˚C, VDM = VDRM, dIGQ/dt = 30A/µs 0 0.25 0.50 0.75 1.00 1.25 1.5 1.75 Snubber capacitance CS - (µF) Fig.3 Maximum dependence of ITCM on CS 2.0 DG406BP25 0.05 dc 0.03 0.02 0.01 0 0.001 0.01 0.1 Time - (s) 10 1.0 100 Fig.4 Maximum (limit) transient thermal impedance - double side cooled Peak half sine wave on-state current - (kA) Thermal impedance - ˚C/W 0.04 20 15 10 5 0 0.0001 0.001 0.01 Pulse duration - (s) 0.1 1.0 Fig.5 Surge (non-repetitive) on-state current vs time 5/19 Mean on-state power dissipation - (W) DG406BP25 1500 Conditions: IG(ON) = 4.0A dc 180˚ 1000 120˚ 60˚ 30˚ 500 0 0 200 400 600 Mean on-state current IT(AV) - (A) 70 80 90 100 120 Maximum permissible case temperature - (˚C) 130 Mean on-state power dissipation - (W) Fig.6 Steady state rectangluar wave conduction loss - double side cooled 1500 Conditions: IG(ON) = 4.0A 1000 180˚ 120˚ 90˚ 60˚ 30˚ 500 0 0 100 200 300 400 500 600 Mean on-state current IT(AV) - (A) 70 80 90 100 120 130 Maximum permissible case temperature - (˚C) Fig.7 Steady state sinusoidal wave conduction loss - double side cooled 6/19 DG406BP25 Conditions: Tj = 25˚C, IFGM = 30A, CS = 1.0µF, dI/dt = 300A/µs, 750 dIFG/dt = 30A/µs VD = 2000V VD = 1500V 500 VD = 1000V 250 0 0 250 500 750 1000 On-state current IT - (A) 1250 1500 Fig.8 Turn-on energy vs on-state current 2000 Turn-on energy loss EON - (mJ) Turn-on energy loss EON - (mJ) 1000 Conditions: Tj = 25˚C, IT = 1000A, CS = 1.0µF, RS = 10 Ohms dI/dt = 300A/µs, dIFG/dt = 30A/µs 1500 1000 VD = 2000V VD = 1500V 500 0 VD = 1000V 0 20 40 60 80 Peak forward gate current IFGM - (A) FIG 9 TURN ON ENERGY PEAK FORWARD Fig.9 Turn-on energy vs peak forward gate current 7/19 DG406BP25 Turn-on energy loss EON - (mJ) 1125 Conditions: 1000 Tj = 125˚C, IFGM = 30A, CS = 1.0µF, RS = 10 Ohms, 875 dI /dt = 300A/µs, T dIF/dt = 30A/µs 750 VD = 2000V VD = 1500V 625 VD = 1000V 500 375 250 125 0 0 250 500 750 1000 On-state current IT - (A) 1250 2500 Fig.10 Turn-on energy vs on-state current 1250 Conditions: Tj = 125˚C, IT = 1000A, CS = 1.0µF, RS = 10 Ohms dI/dt = 300A/µs, dIFG/dt = 30A/µs 1500 VD = 2000V 1000 VD = 1500V VD = 1000V 500 0 0 20 40 60 Peak forward gate current IFGM - (A) Fig.11 Turn-on energy vs peak forward gate current 8/19 Turn-on energy loss EON - (mJ) Turn-on energy loss EON - (mJ) 2000 Conditions: IT = 1000A, Tj = 125˚C, CS = 1.0µF 1000 RS = 10 Ohms IFGM = 30A, dIFG/dt = 30A/µs 750 VD = 2000V 500 VD = 1500V 250 VD = 1000V 80 0 0 100 200 300 Rate of rise of on-state current dIT/dt - (A/µs) FIG 12 TURN ON ENERGY RATE OF Fig.12 Turn-on energy vs rate of rise of on-state current DG406BP25 Conditions: Tj = 125˚C, IFGM = 30A, CS = 1.0µF, VD = 2000V, RS = 10 Ohms, dIT/dt = 300A/µs tr 3.0 2.0 td 1.0 0 0 250 500 750 1000 On-state current IT - (A) 1250 1500 Fig.13 Delay time & rise time vs turn-on current 5.0 Turn-on delay time and rise time - (µs) Turn-on delay and rise time - (µs) 4.0 Conditions: Tj = 125˚C, IT = 1000A, CS = 1.0µF, RS = 10 Ohms, dI/dt = 300A/µs, dIFG/dt = 30A/µs, VD = 2000V 4.0 3.0 tr 2.0 td 1.0 0 0 20 40 60 80 Peak forward gate current IFGM - (A) FIG 14 DELAY TIME & RISE TIME s PEAK FORWARD Fig.14 Delay time & rise time vs peak forward gate current 9/19 DG406BP25 Turn-off energy loss EOFF - (mJ) 2000 Conditions: Tj = 25˚C, CS = 1.0µF, dIGQ/dt = 30A/µs 1500 VDRM 0.75x VDRM 1000 0.5x VDRM 500 0 0 250 500 750 1000 On-state current IT - (A) 1250 1500 Turn-off energy per pulse EOFF - (mJ) Fig.15 Turn-off energy vs on-state current 2000 Conditions: Tj = 25˚C, CS = 1.0µF, IT = 1000A VDRM 1500 0.75x VDRM 1000 0.5x VDRM 500 0 10 20 30 40 50 Rate of rise of reverse gate current dIGQ/dt - (A/µs) FIG 16 TURN OFF ENERGY RATE OF RISE OF Fig.16 Turn-off energy vs rate of rise of reverse gate current 10/19 60 DG406BP25 2500 Conditions: Tj = 125˚C, CS = 1.0µF, dIGQ/dt = 30A/µs VDRM 1500 0.75x VDRM 1000 0.5x VDRM 500 0 0 250 500 750 1000 1250 On-state current IT - (A) FIG 17 TURN OFF ENERGY ON STATE CURRENT 1500 Fig.17 Turn-off energy vs on-state current 2500 Turn-off energy per pulse EOFF - (mJ) Turn-off energy loss EOFF - (mJ) 2000 Conditions: 2000 Tj = 125˚C, CS = 1.0µF, IT = 1000A VDRM 0.75x VDRM 1500 0.5x VDRM 1000 500 10 20 30 40 50 60 Rate of rise of reverse gate current dIGQ/dt - (A/µs) FIG 18 TURN OFF ENERGY LOSS RATE OF RISE OF Fig.18 Turn-off energy loss vs rate of rise of reverse gate current 11/19 DG406BP25 2500 Turn-off energy per pulse EOFF - (mJ) Conditions: Tj = 125˚C, VDM = VDRM, dIGQ/dt = 30A/µs CS = 1.0µF CS = 1.5µF 2000 CS = 2.0µF 1500 CS = 0.5µF 1000 500 0 0 250 500 750 1000 1250 On-state current IT - (A) FIG 19 TURN OFF ENERGY ON STATE CURRENT 1500 Fig.19 Turn-off energy vs on-state current 2.0 Conditions: CS = 1.0µF, dIGQ/dt = 30A/µs Tj = 125˚C Gate fall tgf - (µs) 1.5 Tj = 25˚C 1.0 0.5 0 0 250 500 750 1000 On-state current IT - (A) Fig.20 Gate fall time vs on-state current 12/19 1250 1500 DG406BP25 Gate storage time tgs - (µs) 25 Conditions: CS = 1.0µF, IT = 1000A 20 15 Tj = 125˚C 10 Tj = 25˚C 5 10 20 30 40 50 Rate of rise of reverse gate current dIGQ/dt - (A/µs) FIG 21 GATE STORAGE TIME RATE OF RISE OF 60 Fig.21 Gate storage time vs rate of rise of reverse gate current Gate storage fall tgf - (µs) 2.0 Conditions: CS = 1.0µF, dIGQ/dt = 30A/µs Tj = 125˚C 1.5 Tj = 25˚C 1.0 0.5 0 0 250 500 750 1000 1250 On-state current IT - (A) FIG 22 GATE FALL TIME ON STATE CURRENT 1500 Fig.22 Gate fall time vs on-state current 13/19 DG406BP25 2.00 Conditions: CS = 1.0µF, IT = 1000A Gate fall time tgf - (µs) 1.75 1.50 Tj = 125˚C 1.25 Tj = 25˚C 1.00 10 20 30 40 50 Rate of rise of reverse gate current dIGQ/dt - (A/µs) FIG 23 GATE FALL TIME RATE OF RISE OF 60 Fig.23 Gate fall time vs rate of rise of reverse gate current Peak reverse gate current IGQM - (A) 500 Conditions: CS = 1.0µF, dIGQ/dt = 30A/µs Tj = 125˚C 400 Tj = 25˚C 300 200 100 0 250 500 750 1000 Turn-off current IT - (A) 1250 Fig.24 Peak reverse gate current vs turn-off current 14/19 1500 DG406BP25 500 Conditions: CS = 1.0µF, IT = 1000A Tj = 125˚C Peak reverse gate current IGQM - (A) 450 Tj = 25˚C 400 350 300 250 10 20 30 40 50 Rate of rise of reverse gate current dIGQ/dt - (A/µs) 60 Fig.25 Peak reverse gate current vs rate of rise of reversegate current Total turn-off charge QGQ - (µC) 4000 Conditions: CS = 1.0µF, dIGQ/dt = 30A/µs Tj = 125˚C 3000 Tj = 25˚C 2000 1000 0 0 250 500 750 1000 On-state current IT - (A) 1250 1500 Fig.26 Turn-off gate charge vs on-state current 15/19 DG406BP25 4000 Conditions: CS = 1.0µF, IT = 1000A Turn-off gate charge QGQ - (µC) 3500 3000 Tj = 125˚C 2500 2000 Tj = 25˚C 1500 10 20 30 40 50 Rate of rise of reverse gate current dIGQ/dt - (A/µs) 60 Rate of rise of off-state voltage dV/dt - (V/µs) Fig.27 Turn-off gate charge vs rate of rise of reverse gate current 1000 VD = 1250V 500 0 0.1 Tj = 125˚C VD = 1650V 1.0 10 100 Gate cathode resistance RGK - (Ohms) 1000 Fig.28 Rate of rise of off-state voltage vs gate cathode resistance 16/19 Anode voltage and current DG406BP25 0.9VD 0.9IT dVD/dt VD VD IT 0.1VD td VDM ITAIL VDP tgs tr tgf tgt Gate voltage and current dIFG/dt 0.1IFG tgq IFG VFG IG(ON) 0.1IGQ tw1 VRG QGQ 0.5IGQM IGQM V(RG)BR Recommended gate conditions: ITCM = 1000A IFG = 30A IG(ON) = 4A d.c. tw1(min) = 10µs IGQM = 420A diGQ/dt = 30A/µs QGQ = 3000µC VRG(min) = 2V VRG(max) = 16V These are recommended Dynex Semiconductor conditions. Other conditions are permitted according to users gate drive specifications. Fig.29 General switching waveforms 17/19 DG406BP25 PACKAGE DETAILS For further package information, please contact your local Customer Service Centre. All dimensions in mm, unless stated otherwise. DO NOT SCALE. 2 holes Ø3.6 ± 0.1 x 1.95 ± 0.05 deep Auxiliary cathode 20˚ Gate Cathode 18 nom 27.0 25.5 Ø51 nom Ø38 nom Ø38 nom Ø56 max Ø57.5 max Ø63.5 max Anode Nominal weight: 350g Clamping force: 12kN ±10% Lead length: 505mm Package outine type code: P ASSOCIATED PUBLICATIONS Title Application Note Number Calculating the junction temperature or power semiconductors GTO gate drive units AN4506 AN4571 Recommendations for clamping power semiconductors AN4839 Use of V , r on-state characteristic AN5001 Impoved gate drive for GTO series connections AN5177 TO 18/19 T DG406BP25 POWER ASSEMBLY CAPABILITY The Power Assembly group was set up to provide a support service for those customers requiring more than the basic semiconductor, and has developed a flexible range of heatsink / clamping systems in line with advances in device types and the voltage and current capability of our semiconductors. We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The Assembly group continues to offer high quality engineering support dedicated to designing new units to satisfy the growing needs of our customers. Using the up to date CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete solution (PACs). DEVICE CLAMPS Disc devices require the correct clamping force to ensure their safe operation. The PACs range offers a varied selection of preloaded clamps to suit all of our manufactured devices. This include cube clamps for single side cooling of ‘T’ 22mm Clamps are available for single or double side cooling, with high insulation versions for high voltage assemblies. Please refer to our application note on device clamping, AN4839 HEATSINKS Power Assembly has it’s own proprietary range of extruded aluminium heatsinks. They have been designed to optimise the performance or our semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on request. For further information on device clamps, heatsinks and assemblies, please contact your nearest Sales Representative or the factory. http://www.dynexsemi.com e-mail: [email protected] HEADQUARTERS OPERATIONS DYNEX SEMICONDUCTOR LTD Doddington Road, Lincoln. Lincolnshire. LN6 3LF. United Kingdom. Tel: 00-44-(0)1522-500500 Fax: 00-44-(0)1522-500550 DYNEX POWER INC. Unit 7 - 58 Antares Drive, Nepean, Ontario, Canada K2E 7W6. Tel: 613.723.7035 Fax: 613.723.1518 Toll Free: 1.888.33.DYNEX (39639) CUSTOMER SERVICE CENTRES France, Benelux, Italy and Spain Tel: +33 (0)1 69 18 90 00. Fax: +33 (0)1 64 46 54 50 North America Tel: 011-800-5554-5554. Fax: 011-800-5444-5444 UK, Germany, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020 SALES OFFICES France, Benelux, Italy and Spain Tel: +33 (0)1 69 18 90 00. Fax: +33 (0)1 64 46 54 50 Germany Tel: 07351 827723 North America Tel: (613) 723-7035. Fax: (613) 723-1518. Toll Free: 1.888.33.DYNEX (39639) / Tel: (831) 440-1988. Fax: (831) 440-1989 / Tel: (949) 733-3005. Fax: (949) 733-2986. UK, Germany, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020 These offices are supported by Representatives and Distributors in many countries world-wide. © Dynex Semiconductor 2000 Publication No. DS4090-3 Issue No. 3.0 January 2000 TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRINTED IN UNITED KINGDOM Datasheet Annotations: Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. The annotations are as follows:Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started. Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change. Advance Information: The product design is complete and final characterisation for volume production is well in hand. No Annotation: The product parameters are fixed and the product is available to datasheet specification. This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company reserves the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such methods of use will be satisfactory in a specific piece of equipment. It is the user's responsibility to fully determine the performance and suitability of any equipment using such information and to ensure that any publication or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury or death to the user. All products and materials are sold and services provided subject to the Company's conditions of sale, which are available on request. All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners. 19/19