DYNEX DG646BH25

DG646BH25
DG646BH25
Gate Turn-off Thyristor
Replaces March 1998 version, DS4092-2.3
DS4092-3.0 January 2000
APPLICATIONS
KEY PARAMETERS
2000A
ITCM
VDRM
2500V
867A
IT(AV)
dVD/dt
1000V/µs
300A/µs
diT/dt
■ Variable speed A.C. motor drive inverters (VSD-AC)
■ Uninterruptable Power Supplies
■ High Voltage Converters
■ Choppers
■ Welding
■ Induction Heating
■ DC/DC Converters
FEATURES
■ Double Side Cooling
■ High Reliability In Service
■ High Voltage Capability
■ Fault Protection Without Fuses
■ High Surge Current Capability
■ Turn-off Capability Allows Reduction In Equipment
Size And Weight. Low Noise Emission Reduces Acoustic
Cladding Necessary For Environmental Requirements
Outline type code: H.
See Package Details for further information.
VOLTAGE RATINGS
Type Number
DG646BH25
Repetitive Peak Off-state Voltage Repetitive Peak Reverse Voltage
VRRM
VDRM
V
V
2500
16
Conditions
Tvj = 125oC, IDM = 50mA,
IRRM = 50mA
CURRENT RATINGS
Symbol
Parameter
Conditions
Max.
Units
2000
A
ITCM
Repetitive peak controllable on-state current VD = VDRM, Tj = 125oC, diGQ/dt = 40A/µs, Cs = 2.0µF
IT(AV)
Mean on-state current
THS = 80oC. Double side cooled. Half sine 50Hz.
867
A
IT(RMS)
RMS on-state current
THS = 80oC. Double side cooled. Half sine 50Hz.
1360
A
1/19
DG646BH25
SURGE RATINGS
Symbol
Parameter
Conditions
Max.
Units
ITSM
Surge (non-repetitive) on-state current
10ms half sine. Tj = 125oC
18.0
kA
I2t
I2t for fusing
10ms half sine. Tj =125oC
1.62 x 106
A2s
Critical rate of rise of on-state current
VD = 1500V, IT = 2000A, Tj = 125oC, IFG > 30A,
Rise time > 1.0µs
300
A/µs
To 66% VDRM; RGK ≤ 1.5Ω, Tj = 125oC
135
V/µs
To 66% VDRM; VRG = -2V, Tj = 125oC
1000
V/µs
IT = 2000A, VDM = 2500V,- Tj = 125˚C,
diGQ/dt = 40A/µs, Cs = 2.0µF
200
nH
diT/dt
dVD/dt
LS
Rate of rise of off-state voltage
Peak stray inductance in snubber circuit
GATE RATINGS
Symbol
Parameter
VRGM
Peak reverse gate voltage
IFGM
Peak forward gate current
Conditions
This value maybe exceeded during turn-off
Min.
Max.
Units
-
16
V
20
100
A
PFG(AV)
Average forward gate power
-
15
W
PRGM
Peak reverse gate power
-
19
kW
diGQ/dt
Rate of rise of reverse gate current
30
60
A/µs
tON(min)
Minimum permissable on time
50
-
µs
tOFF(min)
Minimum permissable off time
100
-
µs
Min.
Max.
Units
Double side cooled
-
0.018
o
Anode side cooled
-
0.03
o
Cathode side cooled
-
0.045
o
-
0.006
o
-
125
o
Operating junction/storage temperature range
-40
125
o
Clamping force
18.0
22.0
THERMAL RATINGS AND MECHANICAL DATA
Symbol
Rth(j-hs)
Parameter
DC thermal resistance - junction to heatsink
surface
Rth(c-hs)
Contact thermal resistance
Tvj
Virtual junction temperature
TOP/Tstg
-
2/19
Conditions
Clamping force 20.0kN
With mounting compound
per contact
C/W
C/W
C/W
C/W
C
C
kN
DG646BH25
CHARACTERISTICS
Tj = 125oC unless stated otherwise
Symbol
Conditions
Parameter
Min.
Max.
Units
VTM
On-state voltage
At 2000A peak, IG(ON) = 7A d.c.
-
2.6
V
IDM
Peak off-state current
VDRM = 2500V, VRG = 0V
-
100
mA
IRRM
Peak reverse current
At VRRM
-
50
mA
VGT
Gate trigger voltage
VD = 24V, IT = 100A, Tj = 25oC
-
1.0
V
IGT
Gate trigger current
VD = 24V, IT = 100A, Tj = 25oC
-
3.0
A
IRGM
Reverse gate cathode current
VRGM = 16V, No gate/cathode resistor
-
50
mA
EON
Turn-on energy
VD = 15000V
-
1188
mJ
td
Delay time
IT = 2000A, dIT/dt = 300A/µs
-
1.2
µs
tr
Rise time
IFG = 30A, rise time < 1.0µs
-
3.0
µs
Turn-off energy
-
4000
mJ
tgs
Storage time
-
17.0
µs
tgf
Fall time
IT = 2000A, VDM = 2500V
-
2.0
µs
tgq
Gate controlled turn-off time
Snubber Cap Cs = 2.0µF,
-
19.0
µs
QGQ
Turn-off gate charge
diGQ/dt = 40A/µs
-
6600
µC
QGQT
Total turn-off gate charge
-
13200
µC
IGQM
Peak reverse gate current
-
650
A
EOFF
3/19
DG646BH25
2.0
8.0
1.5
6.0
1.0
4.0
VGT
0.5
2.0
Gate trigger current IGT - (A)
Gate trigger voltage VGT - (V)
CURVES
IGT
0
-50
0
0
25
50
75 100 125 150
Junction temperature Tj - (˚C)
FIG 1 MAXIMUM GATE TRIGGER VOLTAGE/CURRENT
-25
Fig.1 Maximum gate trigger voltage/current vs junction temperature
Instantaneous on-state current ITM - (A)
4000
Measured under pulse conditions.
IG(ON) = 7A
Half sine wave 10ms
3000
Tj = 25˚C
Tj = 125˚C
2000
1000
0
0
1.0
2.0
3.0
4.0
Instantaneous on-state voltage VTM - (V)
Fig.2 On-state characteristics
4/19
5.0
DG646BH25
Maximum permissible turn-off
current ITCM - (A)
3000
Conditions:
Tj = 125˚C, VDM = VDRM,
dIGQ/dt = 40A/µs
2000
1000
0
0
1.0
2.0
3.0
Snubber capacitance CS - (µF)
4.0
Fig.3 Maximum dependence of ITCM on CS
0.020
0.015
0.010
0.005
0
0.001
0.01
0.1
Time - (s)
1.0
10
Fig.4 Maximum (limit) transient thermal impedance - double side cooled
Peak half sine wave on-state current - (kA)
Thermal impedance - ˚C/W
dc
40
30
20
10
0
0.0001
0.001
0.01
Pulse duration - (s)
0.1
1.0
Fig.5 Surge (non-repetitive) on-state current vs time
5/19
DG646BH25
Mean on-state power dissipation - (W)
4000
Conditions:
IG(ON) = 7A
dc
3000
180˚
120˚
2000
60˚
30˚
1000
0
0
500
1000
1500
Mean on-state current IT(AV) - (A)
70
80
90 100 120
Maximum permissible case
temperature - (˚C)
130
Mean on-state power dissipation - (W)
Fig.6 Steady state rectangluar wave conduction loss - double side cooled
3000
Conditions:
IG(ON) = 7A
180˚
120˚
90˚
2000
60˚
30˚
1000
0
0
200 400 600 800 1000 1200
Mean on-state current IT(AV) - (A)
70
80
90 100 120 130
Maximum permissible case
temperature - (˚C)
Fig.7 Steady state sinusoidal wave conduction loss - double side cooled
6/19
DG646BH25
Conditions:
Tj = 25˚C, IFGM = 30A,
CS = 2.0µF, RS = 10Ω,
dI/dt = 300A/µs,
dIFG/dt = 30A/µs
1500
VD = 1500V
1000
VD = 1000V
VD = 750V
500
0
0
500
1000
1500
2000
On-state current IT - (A)
2500
3000
Fig.8 Turn-on energy vs on-state current
2000
Turn-on energy loss EON - (mJ)
Turn-on energy loss EON - (mJ)
2000
1500
Conditions:
Tj = 25˚C, IT = 2000A,
CS = 2.0µF, RS = 10 Ohms
dI/dt = 300A/µs,
dIFG/dt = 30A/µs
1000
VD = 1500V
VD = 1000V
500
0
VD = 750V
0
20
40
60
Peak forward gate current IFGM - (A)
80
Fig.9 Turn-on energy vs peak forward gate current
7/19
DG646BH25
Turn-on energy loss EON - (mJ)
2000
Conditions:
Tj = 125˚C, IFGM = 30A,
CS = 2.0µF,
RS = 10 Ohms,
1500 dIT/dt = 300A/µs,
dIF/dt = 30A/µs
VD = 1500V
1000
VD = 1000V
VD = 750V
500
0
0
500
1000
1500
2000
On-state current IT - (A)
2500
3000
Fig.10 Turn-on energy vs on-state current
2000
Conditions:
Tj = 125˚C, IT = 2000A,
CS = 2.0µF, RS = 10 Ohms
dI/dt = 300A/µs,
dIFG/dt = 30A/µs
1500
VD = 1500V
1000
VD = 1000V
VD = 750V
500
0
Conditions:
IT = 2000A,
Tj = 125˚C,
CS = 2.0µF
1500 RS = 10 Ohms
IFGM = 30A,
dIFG/dt = 30A/µs
VD = 1500V
1000
VD = 1000V
500
VD = 750V
0
0
20
40
60
Peak forward gate current IFGM - (A)
Fig.11 Turn-on energy vs peak forward gate current
8/19
Turn-on energy loss EON - (mJ)
Turn-on energy loss EON - (mJ)
2000
80
0
100
200
300
Rate of rise of on-state current dIT/dt - (A/µs)
FIG 12 TURN ON ENERGY
RATE OF RISE
Fig.12 Turn-on energy vs rate of rise of on-state current
DG646BH25
Conditions: Tj = 125˚C, IFGM = 30A,
CS = 2.0µF, VD = 1500V,
RS = 10Ω, dIT/dt = 300A/µs, dIF/dt = 30A/µs
tr
3.0
2.0
td
1.0
0
0
500
1000
1500
2000
On-state current IT - (A)
2500
3000
Fig.13 Delay time & rise time vs turn-on current
5.0
Turn-on delay time and rise time - (µs)
Turn-on delay and rise time - (µs)
4.0
Conditions:
Tj = 125˚C, IT = 2000A,
CS = 2.0µF,
RS = 10 Ohms,
dI/dt = 300A/µs,
dIFG/dt = 30A/µs,
VD = 1500V
4.0
3.0
tr
2.0
1.0
0
td
0
20
40
60
Peak forward gate current IFGM - (A)
80
Fig.14 Delay time & rise time vs peak forward gate current
9/19
DG646BH25
2500
Conditions:
Tj = 25˚C,
CS = 2.0µF,
dIGQ/dt = 40A/µs
Turn-off energy loss EOFF - (mJ)
2000
VDRM
0.75x VDRM
1500
0.5x VDRM
1000
500
0
0
500
1000
1500
2000
2500
On-state current IT - (A)
FIG 15 TURN OFF ENERGY
ON STATE CURRENT
3000
Turn-off energy per pulse EOFF - (mJ)
Fig.15 Turn-off energy vs on-state current
2500
VDRM
2000
0.75x VDRM
1500
1000
500
20
Conditions:
Tj = 25˚C,
CS = 2.0µF,
IT = 2000A
0.5x VDRM
30
40
50
60
Rate of rise of reverse gate current dIGQ/dt - (A/µs)
Fig.16 Turn-off energy vs rate of rise of reverse gate current
10/19
70
DG646BH25
Conditions:
Tj = 125˚C,
CS = 2.0µF,
dIGQ/dt = 40A/µs
3000
2000
VDRM
0.75x VDRM
0.5x VDRM
1000
0
0
500
1000
1500
2000
2500
On-state current IT - (A)
FIG 17 Fig.17
TURN Turn-off
OFF ENERGY
ON STATE CURRENT
energy vs on-state current
5000
Turn-off energy per pulse EOFF - (mJ)
Turn-off energy loss EOFF - (mJ)
4000
Conditions:
Tj = 125˚C,
CS = 2.0µF,
IT = 2000A
3000
VDRM
4000
0.75x VDRM
3000
0.5x VDRM
2000
1000
20
30
40
50
60
Rate of rise of reverse gate current dIGQ/dt - (A/µs)
70
Fig.18 Turn-off energy loss vs rate of rise of reverse gate current
11/19
DG646BH25
Turn-off energy per pulse EOFF - (mJ)
4000
Conditions:
Tj = 125˚C,
VDM = VDRM,
dIGQ/dt = 40A/µs
CS = 2.0µF
CS = 4.0µF
3000
2000
1000
0
0
500
1000
1500
2000
On-state current IT - (A)
2500
3000
Fig.19 Turn-off energy vs on-state current
Gate storage time tgs - (µs)
20.0
Conditions:
CS = 2.0µF,
dIGQ/dt = 40A/µs
Tj = 125˚C
15.0
Tj = 25˚C
10.0
5.0
0
0
500
1000
1500
2000
On-state current IT - (A)
Fig.20 Gate storage time vs on-state current
12/19
2500
3000
DG646BH25
Gate storage time tgs - (µs)
30
Conditions:
CS = 2.0µF,
IT = 2000A
25
20
Tj = 125˚C
15
Tj = 25˚C
10
20
30
40
50
60
Rate of rise of reverse gate current dIGQ/dt - (A/µs)
70
Fig.21 Gate storage time vs rate of rise of reverse gate current
2.0
Tj = 125˚C
Conditions:
CS = 2.0µF,
dIGQ/dt = 40A/µs
Gate fall tgf - (µs)
1.5
Tj = 25˚C
1.0
0.5
0
0
500
1000
1500
2000
On-state current IT - (A)
2500
3000
Fig.22 Gate fall time vs on-state current
13/19
DG646BH25
2.5
Conditions:
CS = 2.0µF,
IT = 2000A
Tj = 125˚C
Gate fall time tgf - (µs)
2.0
1.5
Tj = 25˚C
1.0
0.5
20
30
40
50
60
Rate of rise of reverse gate current dIGQ/dt - (A/µs)
70
Fig.23 Gate fall time vs rate of rise of reverse gate current
Peak reverse gate current IGQM - (A)
800
Conditions:
CS = 2.0µF,
dIGQ/dt = 40A/µs
Tj = 125˚C
600
Tj = 25˚C
400
200
0
0
500
1000
1500
2000
Turn-off current IT - (A)
2500
Fig.24 Peak reverse gate current vs turn-off current
14/19
3000
DG646BH25
700
Conditions:
CS = 2.0µF,
IT = 2000A
Tj = 125˚C
Peak reverse gate current IGQM - (A)
650
Tj = 25˚C
600
550
500
450
20
30
40
50
60
Rate of rise of reverse gate current dIGQ/dt - (A/µs)
70
Fig.25 Peak reverse gate current vs rate of rise of reversegate current
Total turn-off charge QGQ - (µC)
8000
Conditions:
CS = 2.0µF,
dIGQ/dt = 40A/µs
Tj = 125˚C
6000
Tj = 25˚C
4000
2000
0
0
500
1000
1500
2000
On-state current IT - (A)
2500
3000
Fig.26 Turn-off gate charge vs on-state current
15/19
DG646BH25
Turn-off gate charge QGQ - (µC)
8000
Conditions:
CS = 2.0µF,
IT = 2000A
7000
Tj = 125˚C
6000
5000
Tj = 25˚C
4000
20
30
40
50
60
Rate of rise of reverse gate current dIGQ/dt - (A/µs)
Rate of rise of off-state voltage dV/dt
- (V/µs)
Fig.27 Turn-off gate charge vs rate of rise of reverse gate current
1000
Tj = 125˚C
500
VD = 1250V
VD = 1650V
0
0.1
1.0
10
100
Gate cathode resistance RGK - (Ohms)
1000
Fig.28 Rate of rise of off-state voltage vs gate cathode resistance
16/19
70
Anode voltage and current
DG646BH25
0.9VD
0.9IT
dVD/dt
VD
VD
IT
0.1VD
td
VDM
ITAIL
VDP
tgs
tr
tgf
tgt
Gate voltage and current
dIFG/dt
0.1IFG
tgq
IFG
VFG
IG(ON)
0.1IGQ
tw1
VRG
QGQ
0.5IGQM
IGQM
V(RG)BR
Recommended gate conditions:
ITCM = 2000A
IFG = 30A
IG(ON) = 7A d.c.
tw1(min) = 20µs
IGQM = 650 A
diGQ/dt = 40A/µs
QGQ = 6600µC
VRG(min) = 2V
VRG(max) = 16V
These are recommended Dynex Semiconductor conditions. Other conditions are permitted
according to users gate drive specifications.
Fig.29 General switching waveforms
17/19
DG646BH25
PACKAGE DETAILS
For further package information, please contact your local Customer Service Centre. All dimensions in mm, unless stated otherwise.
DO NOT SCALE.
2 holes Ø3.60 ± 0.05 x 2.0 ± 0.1 deep (One in each electrode)
Cathode Aux. Tube
Gate Tube
15˚
52
Anode
26 ± 0.5
Ø100
Ø62.85
9.6
Ø62.85
Cathode
55
Nominal weight: 820g
Clamping force: 20kN ±10%
Lead length: 505mm
Package outine type code: H
ASSOCIATED PUBLICATIONS
Title
Application Note
Number
Calculating the junction temperature or power semiconductors
AN4506
GTO gate drive units
AN4571
Recommendations for clamping power semiconductors
AN4839
Use of V , r on-state characteristic
AN5001
Impoved gate drive for GTO series connections
AN5177
TO
18/19
T
DG646BH25
POWER ASSEMBLY CAPABILITY
The Power Assembly group was set up to provide a support service for those customers requiring more than the basic semiconductor, and has developed a flexible range of heatsink / clamping systems in line with advances in device types and the voltage and
current capability of our semiconductors.
We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The
Assembly group continues to offer high quality engineering support dedicated to designing new units to satisfy the growing needs of
our customers.
Using the up to date CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete
solution (PACs).
DEVICE CLAMPS
Disc devices require the correct clamping force to ensure their safe operation. The PACs range offers a varied selection of preloaded clamps to suit all of our manufactured devices. This include cube clamps for single side cooling of ‘T’ 22mm
Clamps are available for single or double side cooling, with high insulation versions for high voltage assemblies.
Please refer to our application note on device clamping, AN4839
HEATSINKS
Power Assembly has it’s own proprietary range of extruded aluminium heatsinks. They have been designed to optimise the
performance or our semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on
request.
For further information on device clamps, heatsinks and assemblies, please contact your nearest Sales Representative or the
factory.
http://www.dynexsemi.com
e-mail: [email protected]
HEADQUARTERS OPERATIONS
DYNEX SEMICONDUCTOR LTD
Doddington Road, Lincoln.
Lincolnshire. LN6 3LF. United Kingdom.
Tel: 00-44-(0)1522-500500
Fax: 00-44-(0)1522-500550
DYNEX POWER INC.
Unit 7 - 58 Antares Drive,
Nepean, Ontario, Canada K2E 7W6.
Tel: 613.723.7035
Fax: 613.723.1518
Toll Free: 1.888.33.DYNEX (39639)
CUSTOMER SERVICE CENTRES
France, Benelux, Italy and Spain Tel: +33 (0)1 69 18 90 00. Fax: +33 (0)1 64 46 54 50
North America Tel: 011-800-5554-5554. Fax: 011-800-5444-5444
UK, Germany, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020
SALES OFFICES
France, Benelux, Italy and Spain Tel: +33 (0)1 69 18 90 00. Fax: +33 (0)1 64 46 54 50
Germany Tel: 07351 827723
North America Tel: (613) 723-7035. Fax: (613) 723-1518. Toll Free: 1.888.33.DYNEX (39639) /
Tel: (831) 440-1988. Fax: (831) 440-1989 / Tel: (949) 733-3005. Fax: (949) 733-2986.
UK, Germany, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020
These offices are supported by Representatives and Distributors in many countries world-wide.
© Dynex Semiconductor 2000 Publication No. DS4092-3 Issue No. 3.0 January 2000
TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRINTED IN UNITED KINGDOM
Datasheet Annotations:
Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. The annotations are as follows:Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started.
Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change.
Advance Information: The product design is complete and final characterisation for volume production is well in hand.
No Annotation: The product parameters are fixed and the product is available to datasheet specification.
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19/19