ELANTEC EL5210CS-T13

30MHz Rail-to-Rail Input-Output Op Amps
Features
General Description
• 30MHz -3dB bandwidth
• Supply voltage = 4.5V to 16.5V
• Low supply current (per amplifier)
= 2.5mA
• High slew rate = 33V/µs
• Unity-gain stable
• Beyond the rails input capability
• Rail-to-rail output swing
• Available in both standard and
space-saving fine pitch packages
The EL5210C and EL5410C are low power, high voltage rail-to-rail
input-output amplifiers. The EL5210C contains two amplifiers in one
package and the EL5410C contains four amplifiers. Operating on supplies ranging from 5V to 15V, while consuming only 2.5mA per
amplifier, the EL5410C and EL5210C have a bandwidth of 30MHz -(-3dB). They also provide common mode input ability beyond the supply rails, as well as rail-to-rail output capability. This enables these
amplifiers to offer maximum dynamic range at any supply voltage.
Applications
•
•
•
•
•
•
•
•
Driver for A-to-D Converters
Data Acquisition
Video Processing
Audio Processing
Active Filters
Test Equipment
Battery Powered Applications
Portable Equipment
EL5210C/EL5410C
EL5210C/EL5410C
The EL5410C and EL5210C also feature fast slewing and settling
times, as well as a high output drive capability of 30mA (sink and
source). These features make these amplifiers ideal for high speed filtering and signal conditioning application. Other applications include
battery power, portable devices, and anywhere low power consumption is important.
The EL5410C is available in a space-saving 14-Pin TSSOP package,
as well as the industry-standard 14-Pin SOIC. The EL5210C is available in the 8-Pin MSOP and 8-Pin SOIC packages. Both feature a
standard operational amplifier pin out. These amplifiers operate over a
temperature range of -40°C to +85°C.
Connection Diagram
Ordering Information
Part No.
Package
Tape & Reel
Outline #
8-Pin SOIC
-
MDP0027
EL5210CS-T13
8-Pin SOIC
13”
MDP0027
EL5210CY
8-Pin MSOP
-
MDP0043
EL5210CS
EL5210CY-T7
8-Pin MSOP
7”
MDP0043
EL5210CY-T13
8-Pin MSOP
13”
MDP0043
EL5410CS
14-Pin SOIC
-
MDP0027
14-Pin SOIC
13”
MDP0027
EL5410CR
EL5410CS-T13
14-Pin TSSOP
-
MDP0044
EL5410CR-T13
14-Pin TSSOP
13”
MDP0044
VOUTA 1
14 VOUTD
VINA- 2
VINA+ 3
13 VIND+
+
VOUTA 1
VINA- 2
VS+ 4
11 VSVINA+ 3
VINB+ 5
VOUTB 7
10 VINC+
+
-
+
-
VS- 4
9 VINC-
+
7 VOUTB
+
6 VINB5 VINB+
EL5210C (MSOP-8, SOIC-8)
8 VOUTC
EL5410C (TSSOP-14, SOIC-14)
Note: All information contained in this data sheet has been carefully checked and is believed to be accurate as of the date of publication; however, this data sheet cannot be a “controlled document”. Current revisions, if any, to these
specifications are maintained at the factory and are available upon your request. We recommend checking the revision level before finalization of your design documentation.
© 2000 Elantec Semiconductor, Inc.
November 16, 2000
VINB- 6
8 VS+
12 VIND+
EL5210C/EL5410C
EL5210C/EL5410C
30MHz Rail-to-Rail Input-Output Op Amps
Absolute Maximum Ratings (T
A
= 25°C)
Values beyond absolute maximum ratings can cause the device to be prematurely damaged. Absolute maximum ratings are stress ratings only and
functional device operation is not implied.
+18V
Supply Voltage between VS+ and VSInput Voltage
VS- - 0.5V, VS +0.5V
Maximum Continuous Output Current
30mA
Maximum Die Temperature
Storage Temperature
Operating Temperature
Power Dissipation
ESD Voltage
+125°C
-65°C to +150°C
-40°C to +85°C
See Curves
2kV
Important Note:
All parameters having Min/Max specifications are guaranteed. Typ values are for information purposes only. Unless otherwise noted, all tests are at the
specified temperature and are pulsed tests, therefore: TJ = TC = TA
Electrical Characteristics
VS+ = +5V, VS - = -5V, RL = 1kΩ and CL = 12pF to 0V, TA = 25°C unless otherwise specified.
Parameter
Description
Condition
Min
Typ
Max
3
15
Unit
Input Characteristics
VOS
Input Offset Voltage
TCVOS
Average Offset Voltage Drift [1]
VCM = 0V
7
mV
µV/°C
IB
Input Bias Current
RIN
Input Impedance
CIN
Input Capacitance
CMIR
Common-Mode Input Range
CMRR
Common-Mode Rejection Ratio
for VIN from -5.5V to 5.5V
50
70
dB
AVOL
Open-Loop Gain
-4.5V ≤ VOUT ≤ 4.5V
65
80
dB
VCM = 0V
2
60
1
2
-5.5
nA
GΩ
pF
+5.5
V
Output Characteristics
VOL
Output Swing Low
IL = -5mA
VOH
Output Swing High
IL = 5mA
ISC
IOUT
-4.9
4.8
-4.8
V
4.9
V
Short Circuit Current
±120
mA
Output Current
±30
mA
Power Supply Performance
PSRR
Power Supply Rejection Ratio
VS is moved from ±2.25V to ±7.75V
IS
Supply Current (Per Amplifier)
No Load
60
80
2.5
dB
3.75
mA
Dynamic Performance
SR
Slew Rate [2]
-4.0V ≤ VOUT ≤ 4.0V, 20% o 80%
33
tS
Settling to +0.1% (AV = +1)
(AV = +1), VO = 2V Step
140
ns
BW
-3dB Bandwidth
30
MHz
GBWP
Gain-Bandwidth Product
20
MHz
PM
Phase Margin
50
°
CS
Channel Separation
f = 5MHz
110
dB
dG
Differential Gain [3]
RF = RG = 1kΩ and VOUT = 1.4V
0.12
%
dP
Differential Phase[3]
RF = RG = 1kΩ and VOUT = 1.4V
0.17
°
1. Measured over operating temperature range
2. Slew rate is measured on rising and falling edges
3. NTSC signal generator used
2
V/µs
Electrical Characteristics
VS+ = 5V, VS- = 0V, RL = 1kΩ and CL = 12pF to 2.5V, TA = 25°C unless otherwise specified.
Parameter
Description
Condition
Min
Typ
Max
3
15
Unit
Input Characteristics
VOS
Input Offset Voltage
TCVOS
Average Offset Voltage Drift [1]
VCM = 2.5V
7
mV
µV/°C
IB
Input Bias Current
RIN
Input Impedance
CIN
Input Capacitance
CMIR
Common-Mode Input Range
CMRR
Common-Mode Rejection Ratio
for VIN from -0.5V to 5.5V
45
66
dB
AVOL
Open-Loop Gain
0.5V ≤ VOUT ≤ 4.5V
65
80
dB
VCM = 2.5V
2
60
1
2
-0.5
nA
GΩ
pF
+5.5
V
Output Characteristics
VOL
Output Swing Low
IL = -5mA
VOH
Output Swing High
IL = 5mA
ISC
IOUT
100
4.8
200
mV
4.9
V
Short Circuit Current
±120
mA
Output Current
±30
mA
Power Supply Performance
PSRR
Power Supply Rejection Ratio
VS is moved from 4.5V to 15.5V
IS
Supply Current (Per Amplifier)
No Load
60
80
2.5
dB
3.75
mA
Dynamic Performance
SR
Slew Rate [2]
1V ≤ VOUT ≤ 4V, 20% o 80%
33
tS
Settling to +0.1% (AV = +1)
(AV = +1), VO = 2V Step
140
ns
BW
-3dB Bandwidth
30
MHz
GBWP
Gain-Bandwidth Product
20
MHz
PM
Phase Margin
50
°
CS
Channel Separation
f = 5MHz
110
dB
dG
Differential Gain [3]
RF = RG = 1kΩ and VOUT = 1.4V
0.30
%
dP
Differential Phase[3]
RF = RG = 1kΩ and VOUT = 1.4V
0.66
°
1. Measured over operating temperature range
2. Slew rate is measured on rising and falling edges
3. NTSC signal generator used
3
V/µs
EL5210C/EL5410C
EL5210C/EL5410C
30MHz Rail-to-Rail Input-Output Op Amps
EL5210C/EL5410C
EL5210C/EL5410C
30MHz Rail-to-Rail Input-Output Op Amps
Electrical Characteristics
VS+ = 15V, VS- = 0V, RL = 1kΩ and CL = 12pF to 7.5V, TA = 25°C unless otherwise specified.
Parameter
Description
Condition
Min
Typ
Max
3
15
Unit
Input Characteristics
VOS
Input Offset Voltage
TCVOS
Average Offset Voltage Drift [1]
IB
Input Bias Current
RIN
Input Impedance
VCM = 7.5V
7
VCM = 7.5V
2
mV
µV/°C
60
1
nA
GΩ
CIN
Input Capacitance
CMIR
Common-Mode Input Range
CMRR
Common-Mode Rejection Ratio
for VIN from -0.5V to 15.5V
53
72
dB
AVOL
Open-Loop Gain
0.5V ≤ VOUT ≤ 14.5V
65
80
dB
14.65
14.83
V
2
-0.5
pF
+15.5
V
Output Characteristics
VOL
Output Swing Low
IL = -7.5mA
VOH
Output Swing High
IL = 7.5mA
ISC
Short Circuit Current
±120
mA
IOUT
Output Current
±30
mA
170
350
mV
Power Supply Performance
PSRR
Power Supply Rejection Ratio
VS is moved from 4.5V to 15.5V
IS
Supply Current (Per Amplifier)
No Load
60
80
2.5
dB
3.75
mA
Dynamic Performance
SR
Slew Rate [2]
1V ≤ VOUT ≤ 14V, 20% o 80%
33
tS
Settling to +0.1% (AV = +1)
(AV = +1), VO = 2V Step
140
ns
BW
-3dB Bandwidth
30
MHz
GBWP
Gain-Bandwidth Product
20
MHz
PM
Phase Margin
50
°
CS
Channel Separation
f = 5MHz
110
dB
dG
Differential Gain [3]
RF = RG = 1kΩ and VOUT = 1.4V
0.10
%
dP
Differential Phase[3]
RF = RG = 1kΩ and VOUT = 1.4V
0.11
°
1. Measured over operating temperature range
2. Slew rate is measured on rising and falling edges
3. NTSC signal generator used
4
V/µs
Typical Performance Curves
EL5410C Input Offset Voltage Drift
EL5410C Input Offset Voltage Distribution
25
21
19
17
11
13
Input Offset Voltage Drift, TCVOS(µ V/°C)
Input Bias Current vs Temperature
Input Offset Voltage vs Temperature
0.008
4
0.004
Input Bias Current (µ A)
5
3
2
1
VS=±5V
0
-0.004
-0.008
0
-50
-10
30
70
110
-0.012
-50
150
-10
Temperature (°C)
70
110
150
110
150
Output Low Voltage vs Temperature
-4.85
4.96
-4.87
4.95
Output Low Voltage (V)
VS=±5V
IOUT=5mA
4.94
4.93
VS=±5V
IOUT=5mA
-4.89
-4.91
-4.93
4.92
4.91
-50
30
Temperature (°C)
Output High Voltage vs Temperature
Output High Voltage (V)
9
7
1
12
8
10
6
4
2
-0
-2
-4
0
-6
0
-8
5
-10
100
5
10
3
Quantity (Amplifiers)
200
15
Input Offset Voltage (mV)
Input Offset Voltage (mV)
Typical
Production
Distortion
20
300
-12
Quantity (Amplifiers)
VS=±5V
Typical
Production
Distortion
VS=±5V
TA=25°C
400
15
500
-10
30
70
110
-4.95
-50
150
Temperature (°C)
-10
30
70
Temperature (°C)
5
EL5210C/EL5410C
EL5210C/EL5410C
30MHz Rail-to-Rail Input-Output Op Amps
30MHz Rail-to-Rail Input-Output Op Amps
Typical Performance Curves
Open-Loop Gain vs Temperature
Slew Rate vs Temperature
33.85
90
VS=±5V
RL=1kΩ
85
Slew Rate (V/µ S)
Open-Loop Gain (dB)
33.80
80
VS=±5V
33.75
33.70
33.65
75
33.60
70
-50
-10
30
70
Temperature (°C)
110
33.55
-40
150
EL5410C Supply Current per Amplifier vs Supply
Voltage
80
120
160
EL5410C Supply Current per Amplifier vs
Temperature
TA=25°C
VS=±5V
2.65
2.5
Supply Current (mA)
Supply Current (mA)
40
2.7
2.7
2.3
2.1
1.9
2.6
2.55
2.5
2.45
1.7
2.4
-50
1.5
4
8
12
Supply Voltage (V)
16
20
Differential Gain and Phase
-10
30
70
Temperature (°C)
110
150
8
10
Harmonic Distortion vs VOP-P
-30
0.25
VS=±5V
AV=2
RL=1kΩ
0.15
VS=±5V
AV=1
RL=1k
FIN = 1MHz
-40
0.05
Distortion (dB)
Diff Gain (%)
0
Temperature (°C)
2.9
-0.05
0
Diff Phase (°)
EL5210C/EL5410C
EL5210C/EL5410C
100
200
0.20
0.10
HD3
-50
HD2
-60
-70
0
-0.10
-80
0
100
IRE
200
0
2
4
6
VOP-P (V)
6
Typical Performance Curves
Open Loop Gain and Phase vs Frequency
Frequency Response for Various RL
250
5
100
150
3
60
50
140
-50
Gain
VS=±5V
TA=25°C
RL=1kΩ to GND
CL=12pF to GND
-20
-60
10
100
Magnitude (Normalized) (dB)
20
10kΩ
Phase (°)
Gain (dB)
Phase
-150
1k
10k
100k
1M
10M
-250
100M
1kΩ
1
560Ω
0
-1
AV=1
VS=±5V
CL=12pF
-3
-5
100k
150Ω
1M
Frequency Response for Various CL
Closed Loop Output Impedance vs Frequency
20
200
100pF
AV=1
VS=±5V
TA=25°C
10
160
47pF
0
Output Impedance (Ω)
Magnitude (Normalized) (dB)
1000pF
10pF
-10
RL=1kΩ
AV=1
VS=±5V
-20
-30
100k
120
80
40
1M
10M
0
10k
100M
100k
Frequency (Hz)
Maximum Output Swing vs Frequency
80
8
70
6
4
2
0
10k
1M
Frequency (Hz)
10M
30M
CMRR vs Frequency
10
CMRR (dB)
Maximum Output Swing (VP-P)
100M
10M
Frequency (Hz)
Frequency (Hz)
VS=±5V
TA=25°C
AV=1
RL=1kΩ
CL=12pF
Distortion <1%
60
50
VS=±5V
TA=25°C
40
30
100k
1M
10
10M
Frequency (Hz)
100
1k
10k
100k
Frequency (Hz)
7
1M
10M 30M
EL5210C/EL5410C
EL5210C/EL5410C
30MHz Rail-to-Rail Input-Output Op Amps
30MHz Rail-to-Rail Input-Output Op Amps
Typical Performance Curves
Input Voltage Noise Spectral Density vs
Frequency
PSRR vs Frequency
80
1000
PSRR+
PSRR (dB)
Voltage Noise (nV√Hz)
PSRR-
60
40
VS=±5V
TA=25°C
20
0
100
1k
10k
100k
1M
100
10
1
100
10M
1k
10k
Frequency (Hz)
0.010
0.008
-80
0.006
-100
XTalk (dB)
THD+ N (%)
10M
100M
Channel Separation vs Frequency Response
-60
0.004
VS=±5V
RL=1kΩ
AV=1
VIN=0.5VRMS
0.002
1M
100k
Frequency (Hz)
Total Harmonic Distortion + Noise vs Frequency
Dual measured Channel A to B
Quad measured Channel A to D or B to C
Other combinations yield improved rejection
-120
VS=±5V
RL=1kΩ
AV=1
VIN=110mVRMS
-140
0
-160
1k
10k
Frequency (Hz)
1k
100k
Small-Signal Overshoot vs Load Capacitance
100k
1M
Frequency (Hz)
10M 30M
Settling Time vs Step Size
VS=±5V
AV=1
RL=1kΩ
VIN=±50mV
TA=25°C
4
3
2
Step Size (V)
80
10k
5
100
Overshoot (%)
EL5210C/EL5410C
EL5210C/EL5410C
60
40
VS=±5V
AV=1
RL=1k
CL=12pF
TA=25°C
0.1%
1
0
-1
-2
0.1%
-3
20
-4
-5
70
0
10
100
Load Capacitance (pF)
1000
90
110
130
150
170
Settling Time (ns)
8
190
210
230
Typical Performance Curves
Large Signal Transient Response
1V
Small Signal Transient Response
200ns
50mV
VS=±5V
TA=25°C
AV=1
RL=1kΩ
CL=12pF
VS=±5V
TA=25°C
AV=1
RL=1kΩ
CL=12pF
9
100nS
EL5210C/EL5410C
EL5210C/EL5410C
30MHz Rail-to-Rail Input-Output Op Amps
EL5210C/EL5410C
EL5210C/EL5410C
30MHz Rail-to-Rail Input-Output Op Amps
Pin Descriptions
EL5210C
EL5410C
Name
1
1
VOUTA
Function
Equivalent Circuit
Amplifier A Output
VS+
VSGND
Circuit 1
2
2
VINA-
Amplifier A Inverting Input
VS+
VSCircuit 2
3
3
VINA+
8
4
VS+
5
5
VINB+
Amplifier B Non-Inverting Input
(Reference Circuit 2)
6
6
VINB-
Amplifier B Inverting Input
(Reference Circuit 2)
7
7
VOUTB
Amplifier B Output
(Reference Circuit 1)
8
VOUTC
Amplifier C Output
(Reference Circuit 1)
9
VINC-
Amplifier C Inverting Input
(Reference Circuit 2)
10
VINC+
Amplifier C Non-Inverting Input
(Reference Circuit 2)
11
VS-
12
VIND+
Amplifier D Non-Inverting Input
(Reference Circuit 2)
13
VIND-
Amplifier D Inverting Input
(Reference Circuit 2)
14
VOUTD
Amplifier D Output
(Reference Circuit 1)
4
Amplifier A Non-Inverting Input
(Reference Circuit 2)
Positive Power Supply
Negative Power Supply
10
Applications Information
Product Description
connected to GND. The input is a 10Vp-p sinusoid. The
output voltage is approximately 9.8VP-P.
10µ S
VS=±5V
TA=25°C
AV=1
VIN=10VP-P
5V
Input
5V
Output
The EL5210C and EL5410C voltage feedback amplifiers are fabricated using a high voltage CMOS process.
They exhibit Rail-to-Rail input and output capability,
are unity gain stable and have low power consumption
(2.5mA per amplifier). These features make the
EL5210C and EL5410C ideal for a wide range of general-purpose applications. Connected in voltage follower
mode and driving a load of 1kΩ and 12pF, the EL5210C
and EL5410C have a -3dB bandwidth of 30MHz while
maintaining a 33V/µS slew rate. The EL5210C is a dual
amplifier while the EL5410C is a quad amplifier.
Operating Voltage, Input, and Output
The EL5210C and EL5410C are specified with a single
nominal supply voltage from 5V to 15V or a split supply
with its total range from 5V to 15V. Correct operation is
guaranteed for a supply range of 4.5V to 16.5V. Most
EL5210C and EL5410C specifications are stable over
both the full supply range and operating temperatures of
-40 °C to +85 °C. Parameter variations with operating
voltage and/or temperature are shown in the typical performance curves.
Figure 1. Operation with Rail-to-Rail Input and
Output
Short Circuit Current Limit
The EL5210C and EL5410C will limit the short circuit
current to +/-120mA if the output is directly shorted to
the positive or the negative supply. If an output is
shorted indefinitely, the power dissipation could easily
increase such that the device may be damaged. Maximum reliability is maintained if the output continuous
current never exceeds +/-30mA. This limit is set by the
design of the internal metal interconnects.
The input common-mode voltage range of the EL5210C
and EL5410C extends 500mV beyond the supply rails.
The output swings of the EL5210C and EL5410C typically extend to within 100mV of positive and negative
supply rails with load currents of 5mA. Decreasing load
currents will extend the output voltage range even closer
to the supply rails. Figure 1 shows the input and output
waveforms for the device in the unity-gain configuration. Operation is from +/-5V supply with a 1kΩ load
Output Phase Reversal
The EL5210C and EL5410C are immune to phase reversal as long as the input voltage is limited from VS- 0.5V to VS+ +0.5V. Figure 2 shows a photo of the output of the device with the input voltage driven beyond
the supply rails. Although the device's output will not
change phase, the input's overvoltage should be avoided.
If an input voltage exceeds supply voltage by more than
0.6V, electrostatic protection diodes placed in the input
11
EL5210C/EL5410C
EL5210C/EL5410C
30MHz Rail-to-Rail Input-Output Op Amps
EL5210C/EL5410C
EL5210C/EL5410C
30MHz Rail-to-Rail Input-Output Op Amps
power supply voltage, plus the power in the IC due to the
loads, or:
stage of the device begin to conduct and overvoltage
damage could occur.
P D MAX = Σi [ V S × I SMA X + ( V S + – V OU T i ) × I L OA D i ]
1V
10µ S
when sourcing, and
P D MA X = Σi [ V S × I SM AX + ( V OU T i – V S - ) × I L OA D i ]
when sinking.
VS=±2.5V
TA=25°C
AV=1
VIN=6VP-P
Where:
i = 1 to 2 for Dual and 1 to 4 for Quad
1V
VS = Total Supply Voltage
ISMAX = Maximum Supply Current Per Amplifier
Figure 2. Operation with Beyond-the-Rails
Input
VOUTi = Maximum Output Voltage of the
Application
Power Dissipation
ILOADi = Load current
With the high-output drive capability of the EL5210C
and EL5410C amplifiers, it is possible to exceed the
125°C 'absolute-maximum junction temperature' under
certain load current conditions. Therefore, it is important
to calculate the maximum junction temperature for the
application to determine if load conditions need to be
modified for the amplifier to remain in the safe operating
area.
If we set the two PDMAX equations equal to each other,
we can solve for RLOADi to avoid device overheat. Figure 3 and Figure 4 provide a convenient way to see if the
device will overheat. The maximum safe power dissipation can be found graphically, based on the package type
and the ambient temperature. By using the previous
equation, it is a simple matter to see if PDMAX exceeds
the device's power derating curves. To ensure proper
operation, it is important to observe the recommended
derating curves shown in Figure 3 and Figure 4.
The maximum power dissipation allowed in a package is
determined according to:
T JM AX – T A MA X
P D MAX = -------------------------------------------Θ JA
Where:
TJMAX = Maximum Junction Temperature
TAMAX= Maximum Ambient Temperature
ΘJA = Thermal Resistance of the Package
PDMAX = Maximum Power Dissipation in the
Package.
The maximum power dissipation actually produced by
an IC is the total quiescent supply current times the total
12
lower. The inverting input should be directly connected
to the output and the non-inverting input tied to the
ground plane.
Packages Mounted on a JEDEC JESD51-7 High
Effective Thermal Conductivity Test Board
1200
1.136W
Power Dissipation (mW)
MAX TJ=125°C
1.0W
909mW
1000
Driving Capacitive Loads
The EL5210C and EL5410C can drive a wide range of
capacitive loads. As load capacitance increases, however, the -3dB bandwidth of the device will decrease and
the peaking increase. The amplifiers drive 10pF loads in
parallel with 1kΩ with just 1.2dB of peaking, and 100pF
with 6.5dB of peaking. If less peaking is desired in these
applications, a small series resistor (usually between 5Ω
and 50Ω) can be placed in series with the output. However, this will obviously reduce the gain slightly.
Another method of reducing peaking is to add a "snubber" circuit at the output. A snubber is a shunt load
consisting of a resistor in series with a capacitor. Values
of 150Ω and 10nF are typical. The advantage of a snubber is that it does not draw any DC load current or
reduce the gain
833mW
800
600
SO14
θJA=88°C/W
SO8
θJA=110°C/W
400
TSSOP14
θJA=100°C/W
MSOP8
θJA=115°C/W
200
0
0
25
50
75 85 100
Ambient Temperature (°C)
125
150
Figure 3. Package Power Dissipation vs
Ambient Temperature
Packages Mounted on a JEDEC JESD51-3 Low
Effective Thermal Conductivity Test Board
Power Supply Bypassing and Printed Circuit
Board Layout
1200
MAX TJ=125°C
The EL5210C and EL5410C can provide gain at high
frequency. As with any high-frequency device, good
printed circuit board layout is necessary for optimum
performance. Ground plane construction is highly recommended, lead lengths should be as short as possible
and the power supply pins must be well bypassed to
reduce the risk of oscillation. For normal single supply
operation, where the VS- pin is connected to ground, a
0.1µF ceramic capacitor should be placed from VS+ to
pin to VS- pin. A 4.7µF tantalum capacitor should then
be connected in parallel, placed in the region of the
amplifier. One 4.7µF capacitor may be used for multiple
devices. This same capacitor combination should be
placed at each supply pin to ground if split supplies are
to be used.
Power Dissipation (mW)
1000
800
SO14
θJA=120°C/W
833mW
606mW
600
625mW
TSSOP14
θJA=165°C/W
485mW
400
SO8
θJA=160°C/W
200
MSOP8
θJA=206°C/W
0
0
25
50
75 85 100
Ambient Temperature (°C)
125
150
Figure 4. Package Power Dissipation vs
Ambient Temperature
Unused Amplifiers
It is recommended that any unused amplifiers in a dual
and a quad package be configured as a unity gain fol-
13
EL5210C/EL5410C
EL5210C/EL5410C
30MHz Rail-to-Rail Input-Output Op Amps
EL5210C/EL5410C
EL5210C/EL5410C
30MHz Rail-to-Rail Input-Output Op Amps
General Disclaimer
Specifications contained in this data sheet are in effect as of the publication date shown. Elantec, Inc. reserves the right to make changes in the circuitry or specifications contained herein at any time without notice. Elantec, Inc. assumes no responsibility for the use of any circuits described
herein and makes no representations that they are free from patent infringement.
November 16, 2000
WARNING - Life Support Policy
Elantec, Inc. products are not authorized for and should not be used
within Life Support Systems without the specific written consent of
Elantec, Inc. Life Support systems are equipment intended to support or sustain life and whose failure to perform when properly used
in accordance with instructions provided can be reasonably
expected to result in significant personal injury or death. Users contemplating application of Elantec, Inc. Products in Life Support
Systems are requested to contact Elantec, Inc. factory headquarters
to establish suitable terms & conditions for these applications. Elantec, Inc.’s warranty is limited to replacement of defective
components and does not cover injury to persons or property or
other consequential damages.
Elantec Semiconductor, Inc.
675 Trade Zone Blvd.
Milpitas, CA 95035
Telephone: (408) 945-1323
(888) ELANTEC
Fax:
(408) 945-9305
European Office: +44-118-977-6080
Japan Technical Center: +81-45-682-5820
14
Printed in U.S.A.