ETC EL5128IY

EL5128
®
Data Sheet
November 22, 2002
Dual VCOM Amplifier & Gamma Reference
Buffer
The EL5128 integrates two VCOM
® amplifiers with a single gamma
reference buffer. Operating on
supplies ranging from 5V to 15V, while consuming only
2.0mA, the EL5128 has a bandwidth of 12MHz (-3dB) and
provides common mode input ability beyond the supply rails,
as well as rail-to-rail output capability. This enables this
amplifier to offer maximum dynamic range at any supply
voltage. The EL5128 also features fast slewing and settling
times, as well as a high output drive capability of 30mA (sink
and source).
Features
• Dual VCOM amplifier
• Single gamma reference buffer
• 12MHz -3dB bandwidth
• Supply voltage = 4.5V to 16.5V
• Low supply current = 2.0mA
• High slew rate = 10V/µs
• Unity-gain stable
• Beyond the rails input capability
• Rail-to-rail output swing
The EL5128 is targeted at TFT-LCD applications, including
notebook panels, monitors, and LCD-TVs. It is available in
the 10-pin MSOP package and is specified for operation
over the -40°C to +85°C temperature range.
• Ultra-small package
Pinout
• Notebook displays
EL5128IY
(10-PIN MSOP)
TOP VIEW
VOUTA 1
VINA- 2
+
+
VINA+ 3
-
Applications
• TFT-LCD drive circuits
• LCD desktop monitors
• LCD-TVs
10 VOUTB
-
FN7000
9 VINB-
Ordering Information
PART NUMBER
PACKAGE
TAPE & REEL
OUTLINE #
EL5128IY
10-Pin MSOP
-
MDP0043
EL5128IY-T7
10-Pin MSOP
7”
MDP0043
EL5128IY-T13
10-Pin MSOP
13”
MDP0043
8 VINB+
VS+ 4
7 VS-
VINC 5
6 VOUTC
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-ELANTEC or 408-945-1323 | Intersil (and design) is a registered trademark of Intersil Americas Inc.
Elantec is a registered trademark of Elantec Semiconductor, Inc.
Copyright © Intersil Americas Inc. 2002. All Rights Reserved
EL5128
Absolute Maximum Ratings
Thermal Information
Supply Voltage between VS+ and VS- . . . . . . . . . . . . . . . . . . . .+18V
Input Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . VS- - 0.5V, VS + 0.5V
Maximum Continuous Output Current . . . . . . . . . . . . . . . . . . 30mA
ESD Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2kV
Maximum Die Temperature . . . . . . . . . . . . . . . . . . . . . . . . . .+125oC
Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . -65oC to +150oC
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . See Curves
Operating Conditions
Operating Temperature . . . . . . . . . . . . . . . . . . . . . . -40oC to +85oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
IMPORTANT NOTE: All parameters having Min/Max specifications are guaranteed. Typ values are for information purposes only. Unless otherwise noted, all tests are at
the specified temperature and are pulsed tests, therefore: TJ = TC = TA
Electrical Specifications
VS+ = +5V, VS- = -5V, RL = 10kΩ and CL = 10pF to 0V, TA = 25°C unless otherwise specified.
PARAMETER
DESCRIPTION
CONDITION
MIN
TYP
MAX
UNIT
12
mV
Input Characteristics
VOS
Input Offset Voltage
VCM = 0V
2
TCVOS
Average Offset Voltage Drift
a
5
IB
Input Bias Current
VCM = 0V
2
RIN
Input Impedance
CIN
Input Capacitance
CMIR
Common-Mode Input Range
(VCOM amps)
CMRR
Common-Mode Rejection Ratio
(VCOM amps) for VIN from -5.5V to +5.5V
50
70
dB
AVOL
Open-Loop Gain
-4.5V ≤ VOUT ≤ +4.5V (VCOM amps)
75
95
dB
AV
Voltage Gain
-4.5V ≤ VOUT ≤ +4.5V
µV/°C
50
nA
1
GΩ
1.35
pF
-5.5
+5.5
0.995
V
1.005
V/V
-4.85
V
Output Characteristics
VOL
Output Swing Low
IL = -5mA
VOH
Output Swing High
IL = 5mA
ISC
IOUT
-4.92
4.85
4.92
V
Short Circuit Current
±120
mA
Output Current
±30
mA
80
dB
Power Supply Performance
PSRR
Power Supply Rejection Ratio
VS is moved from ±2.25V to ±7.75V
60
IS
Supply Current (Per Amplifier)
No load
660
1000
µA
Dynamic Performance
SR
Slew Rateb
-4.0V ≤ VOUT ≤ +4.0V, 20% to 80%
10
V/µs
tS
Settling to +0.1% (AV = +1)
(AV = +1), VO = 2V step
500
ns
BW
-3dB Bandwidth
RL = 10kΩ, CL = 10pF
12
MHz
GBWP
Gain-Bandwidth Product
RL = 10kΩ, CL = 10pF (VCOM amps)
8
MHz
PM
Phase Margin
RL = 10kΩ, CL = 10pF (VCOM amps)
50
°
CS
Channel Separation
f = 5MHz
75
dB
a.Measured over operating temperature range
b.Slew rate is measured on rising and falling edges
2
EL5128
Electrical Specifications
VS+ = 5V, VS-= 0V, RL = 10kΩ and CL = 10pF to 2.5V, TA = 25°C unless otherwise specified.
PARAMETER
DESCRIPTION
CONDITION
MIN
TYP
MAX
UNIT
10
mV
Input Characteristics
VOS
Input Offset Voltage
VCM = 2.5V
2
TCVOS
Average Offset Voltage Drift
a
5
IB
Input Bias Current
VCM = 2.5V
2
RIN
Input Impedance
CIN
Input Capacitance
CMIR
Common-Mode Input Range
CMRR
Common-Mode Rejection Ratio
for VIN from -0.5V to +5.5V
45
66
dB
AVOL
Open-Loop Gain
0.5V ≤ VOUT ≤+ 4.5V
75
95
dB
AV
Voltage Gain
0.5V ≤ VOUT ≤+ 4.5V
0.995
µV/°C
50
nA
1
GΩ
1.35
pF
-0.5
+5.5
V
1.005
V/V
150
mV
Output Characteristics
VOL
Output Swing Low
IL = -5mA
VOH
Output Swing High
IL = +5mA
ISC
IOUT
80
4.85
4.92
V
Short Circuit Current
±120
mA
Output Current
±30
mA
80
dB
Power Supply Performance
PSRR
Power Supply Rejection Ratio
VS is moved from 4.5V to 15.5V
60
IS
Supply Current (Per Amplifier)
No load
660
1000
µA
Dynamic Performance
SR
Slew Rateb
1V ≤ VOUT ≤ 4V, 20% to 80%
10
V/µs
tS
Settling to +0.1% (AV = +1)
(AV = +1), VO = 2V step
500
ns
BW
-3dB Bandwidth
RL = 10kΩ, CL = 10pF
12
MHz
GBWP
Gain-Bandwidth Product
RL = 10 kΩ, CL = 10pF
8
MHz
PM
Phase Margin
RL = 10 kΩ, CL = 10 pF
50
°
CS
Channel Separation
f = 5MHz
75
dB
a.Measured over operating temperature range
b.Slew rate is measured on rising and falling edges
3
EL5128
Electrical Specifications
VS+ = 15V, VS- = 0V, RL = 10kΩ and CL = 10pF to 7.5V, TA = 25°C unless otherwise specified.
PARAMETER
DESCRIPTION
CONDITION
MIN
TYP
MAX
UNIT
14
mV
Input Characteristics
VOS
Input Offset Voltage
VCM = 7.5V
2
TCVOS
Average Offset Voltage Drift
a
5
IB
Input Bias Current
VCM = 7.5V
2
RIN
Input Impedance
CIN
Input Capacitance
CMIR
Common-Mode Input Range
CMRR
Common-Mode Rejection Ratio
for VIN from -0.5V to +15.5V
53
72
dB
AVOL
Open-Loop Gain
0.5V ≤ VOUT ≤ 14.5V
75
95
dB
AV
Voltage Gain
0.5V ≤ VOUT ≤ 14.5V
0.995
µV/°C
50
nA
1
GΩ
1.35
pF
-0.5
+15.5
V
1.005
V/V
150
mV
Output Characteristics
VOL
Output Swing Low
IL = -5mA
VOH
Output Swing High
IL = +5mA
ISC
IOUT
80
14.85
14.92
V
Short Circuit Current
±120
mA
Output Current
±30
mA
80
dB
Power Supply Performance
PSRR
Power Supply Rejection Ratio
VS is moved from 4.5V to 15.5V
60
IS
Supply Current (Per Amplifier)
No load
660
1000
µA
Dynamic Performance
SR
Slew Rateb
1V ≤ VOUT ≤ 14V, 20% to 80%
10
V/µs
tS
Settling to +0.1% (AV = +1)
(AV = +1), VO = 2V step
500
ns
BW
-3dB Bandwidth
RL = 10kΩ, CL = 10pF
12
MHz
GBWP
Gain-Bandwidth Product
RL = 10kΩ, CL = 10pF
8
MHz
PM
Phase Margin
RL = 10kΩ, CL = 10 pF
50
°
CS
Channel Separation
f = 5MHz
75
dB
a.Measured over operating temperature range
b.Slew rate is measured on rising and falling edges
4
EL5128
Typical Performance Curves
Input Offset Voltage Distribution
Input Offset Voltage Drift
70
1800
Typical
Production
Distribution
VS=±5V
TA=25°C
1600
Quantity (Amplifiers)
Quantity (Amplifiers)
1400
1200
1000
800
600
Typical
Production
Distribution
VS=±5V
60
50
40
30
20
400
10
200
0
21
19
17
15
13
9
11
7
5
3
1
12
8
10
6
4
2
-0
-2
-4
-6
-8
-10
-12
0
Input Offset Voltage Drift, TCVOS (µV/°C)
Input Offset Voltage (mV)
Input Offset Voltage vs Temperature
Input Bias Current vs Temperature
10
2.0
VS=±5V
Input Bias Current (nA)
Input Offset Voltage (mV)
VS=±5V
5
0
-5
0.0
-2.0
-50
0
50
100
150
-50
0
Temperature (°C)
100
150
Output Low Voltage vs Temperature
Output High Voltage vs Temperature
-4.91
4.97
-4.92
VS=±5V
IOUT=5mA
4.96
Output Low Voltage (V)
Output High Voltage (V)
50
Temperature (°C)
4.95
4.94
VS=±5V
IOUT=-5mA
-4.93
-4.94
-4.95
-4.96
-4.97
4.93
-50
0
50
100
-50
150
0
Open-Loop Gain vs Temperature
100
150
Slew Rate vs Temperature
10.40
100
VS=±5V
VS=±5V
RL=10kΩ
Slew Rate (V/µS)
Open-Loop Gain (dB)
50
Temperature (°C)
Temperature (°C)
90
10.35
10.30
80
10.25
-50
0
50
Temperature (°C)
5
100
150
-50
0
50
Temperature (°C)
100
150
EL5128
Typical Performance Curves
Supply Current per Amplifier vs Supply Voltage
Supply Current per Amplifier vs Temperature
700
TA=25°C
VS=±5V
600
Supply Current (µA)
Supply Current (mA)
0.55
0.5
500
400
0.45
300
-50
0
50
100
150
0
5
10
Temperature (°C)
200
100
-80
50
-130
-180
Gain
-50
10
100
1k
10k
100k
1M
10M
Phase(°)
-30
Phase
Magnitude (Normalized) (dB)
150
Gain (dB)
5
20
0
10kΩ
0
1kΩ
150Ω
-10
-15
100k
-230
100M
560Ω
CL=10pF
AV=1
VS=±5V
-5
1M
Frequency Response for Various CL
Closed Loop Output Impedance vs Frequency
20
200
RL=10kΩ
AV=1
VS=±5V
10
12pF
0
50pF
-10
100pF
-20
1M
120
80
40
1000pF
-30
100k
AV=1
VS=±5V
TA=25°C
160
Output Impedance (Ω)
Magnitude (Normalized) (dB)
100M
10M
Frequency (Hz)
Frequency (Hz)
10M
0
10k
100M
100
1M
10M
Frequency (Hz)
Frequency (Hz)
Maximum Output Swing vs Frequency
CMRR vs Frequency
80
12
10
60
8
CMRR (dB)
Maximum Output Swing (VP-P)
20
Frequency Response for Various RL
Open Loop Gain and Phase vs Frequency
VS=±5V, TA=25°C
RL=10KΩ to GND
CL=12pF to GND
15
Supply Voltage (V)
6
VS=±5V
TA=25°C
AV=1
RL=10kΩ
CL=12pF
Distortion <1%
4
2
20
VS=±5V
TA=25°C
0
10k
40
100
1M
Frequency (Hz)
6
10M
0
100
1k
10k
100k
Frequency (Hz)
1M
10M
EL5128
Typical Performance Curves
Input Voltage Noise Spectral Density vs Frequency
PSRR vs Frequency
600
80
PSRR+
PSRR (dB)
Voltage Noise (nV√Hz)
PSRR-
60
40
20
100
10
VS=±5V
TA=25°C
0
100
1k
10k
100k
1M
1
100
10M
1k
10k
Frequency (Hz)
Total Harmonic Distortion + Noise vs Frequency
100M
-60
Measured Channel A to B
0.009
0.008
VS=±5V
RL=10kΩ
AV=1
VIN=220mVRMS
-80
X-Talk (dB)
0.007
THD+ N (%)
10M
Channel Separation vs Frequency Response
0.010
0.006
0.005
0.004
VS=±5V
RL=10kΩ
AV=1
VIN=1VRMS
0.003
0.002
-100
-120
0.001
-140
1k
10k
Frequency (Hz)
100k
1k
1M
VS=±5V
AV=1
RL=10kΩ
CL=12pF
TA=25°C
4
3
2
Step Size (V)
70
100k
6M
Settling Time vs Step Size
VS=±5V
AV=1
RL=10kΩ
VIN=±50mV
TA=25°C
90
10k
Frequency (Hz)
Small-Signal Overshoot vs Load Capacitance
Overshoot (%)
100k
1M
Frequency (Hz)
50
30
0.1%
1
0
-1
-2
0.1%
-3
-4
10
10
100
Load Capacitance (pF)
0
200
400
600
800
Settling Time (nS)
Small Signal Transient Response
Large Signal Transient Response
1V
1000
1µS
50mV
200ns
VS=±5V
TA=25°C
AV=1
RL=10kΩ
CL=12pF
VS=±5V
TA=25°C
AV=1
RL=10kΩ
CL=12pF
7
EL5128
Pin Descriptions
PIN
NUMBER
PIN NAME
1
VOUTA
PIN FUNCTION
EQUIVALENT CIRCUIT
Amplifier A Output
VS+
VS-
GND
Circuit 1
2
VINA-
Amplifier A Inverting Input
VS+
VS-
Circuit 2
3
VINA+
Amplifier A Non-Inverting Input
(Reference Circuit 2)
4
VS+
Positive Power Supply
5
VINC
Amplifier C
(Reference Circuit 2)
6
VOUTC
Amplifier C Output
(Reference Circuit 2)
7
VS-
8
VINB+
Amplifier B Non-Inverting Input
(Reference Circuit 2)
9
VINB-
Amplifier B Inverting Input
(Reference Circuit 2)
10
VOUTB
Amplifier B Output
(Reference Circuit 1)
Negative Power Supply
8
EL5128
Applications Information
Output Phase Reversal
Product Description
The EL5128 voltage feedback amplifier/buffer combination is
fabricated using a high voltage CMOS process. It exhibits
rail-to-rail input and output capability, it is unity gain stable,
and has low power consumption (500µA per amplifier).
These features make the EL5128 ideal for a wide range of
general-purpose applications. Connected in voltage follower
mode and driving a load of 10kΩ and 12pF, the EL5128 has
a -3dB bandwidth of 12MHz while maintaining a 10V/µs slew
rate.
The EL5128 is immune to phase reversal as long as the
input voltage is limited from (VS-) -0.5V to (VS+) +0.5V.
Figure 2 shows a photo of the output of the device with the
input voltage driven beyond the supply rails. Although the
device's output will not change phase, the input's overvoltage should be avoided. If an input voltage exceeds
supply voltage by more than 0.6V, electrostatic protection
diodes placed in the input stage of the device begin to
conduct and over-voltage damage could occur.
FIGURE 2. Operation with Beyond-the-Rails Input
Operating Voltage, Input, and Output
1V
The EL5128 is specified with a single nominal supply voltage
from 5V to 15V or a split supply with its total range from 5V
to 15V. Correct operation is guaranteed for a supply range of
4.5V to 16.5V. Most EL5128 specifications are stable over
both the full supply range and operating temperatures of 40°C to +85°C. Parameter variations with operating voltage
and/or temperature are shown in the typical performance
curves.
The input common-mode voltage range of the amplifiers
extends 500mV beyond the supply rails. The output swings
of the EL5128 typically extend to within 80mV of positive and
negative supply rails with load currents of 5mA. Decreasing
load currents will extend the output voltage range even
closer to the supply rails. Figure 1 shows the input and
output waveforms for the device in the unity-gain
configuration. Operation is from ±5V supply with a 10kΩ load
connected to GND. The input is a 10VP-P sinusoid. The
output voltage is approximately 9.985VP-P.
FIGURE 1. Operation with Rail-to-Rail Input and Output
100µs
VS=±2.5V
TA=25°C
AV=1
VIN=6VP-P
1V
Power Dissipation
With the high-output drive capability of the EL5128 amplifier,
it is possible to exceed the 125°C “absolute-maximum
junction temperature” under certain load current conditions.
Therefore, it is important to calculate the maximum junction
temperature for the application to determine if load
conditions need to be modified for the amplifier to remain in
the safe operating area.
The maximum power dissipation allowed in a package is
determined according to:
where:
• TJMAX = Maximum junction temperature
Output
VS=±5V
TA=25°C
AV=1
VIN=10VP-
Input
T JMAX - T AMAX
P DMAX = --------------------------------------------Θ JA
• TAMAX= Maximum ambient temperature
• θJA = Thermal resistance of the package
• PDMAX = Maximum power dissipation in the package
Short Circuit Current Limit
The EL5128 will limit the short circuit current to ±120mA if
the output is directly shorted to the positive or the negative
supply. If an output is shorted indefinitely, the power
dissipation could easily increase such that the device may
be damaged. Maximum reliability is maintained if the output
continuous current never exceeds ±30mA. This limit is set by
the design of the internal metal interconnects.
9
The maximum power dissipation actually produced by an IC
is the total quiescent supply current times the total power
supply voltage, plus the power in the IC due to the loads, or:
P DMAX = Σi × [ V S × I SMAX + ( V S + - V OUT i ) × I LOAD i ]
when sourcing, and:
P DMAX = Σi × [ V S × I SMAX + ( V OUT i - V S - ) × I LOAD i ]
EL5128
when sinking.
Driving Capacitive Loads
where:
The EL5128 can drive a wide range of capacitive loads. As
load capacitance increases, however, the -3dB bandwidth of
the device will decrease and the peaking increase. The
amplifiers drive 10pF loads in parallel with 10kΩ with just
1.5dB of peaking, and 100pF with 6.4dB of peaking. If less
peaking is desired in these applications, a small series
resistor (usually between 5Ω and 50Ω) can be placed in
series with the output. However, this will obviously reduce
the gain slightly. Another method of reducing peaking is to
add a “snubber” circuit at the output. A snubber is a shunt
load consisting of a resistor in series with a capacitor. Values
of 150Ω and 10nF are typical. The advantage of a snubber is
that it does not draw any DC load current or reduce the gain
• VS = Total supply voltage
• ISMAX = Maximum supply current per amplifier
• VOUTi = Maximum output voltage of the application
• ILOADi = Load current
If we set the two PDMAX equations equal to each other, we
can solve for RLOADi to avoid device overheat. Figures 3
and 4 provide a convenient way to see if the device will
overheat. The maximum safe power dissipation can be
found graphically, based on the package type and the
ambient temperature. By using the previous equation, it is a
simple matter to see if PDMAX exceeds the device's power
derating curves. To ensure proper operation, it is important
to observe the recommended derating curves in Figures 3
and 4.
FIGURE 3. Package Power Dissipation vs Ambient
Temperature
Package Power Dissipation vs Ambient Temperature
JEDEC JESD51-7 High Effective Thermal Conductivity Test Board
1
0.9
870mW
Power Dissipation (W)
0.8
0.7
MS
θ
JA =
0.6
0.5
11
5
OP
10
°C
/W
0.4
0.3
0.2
0.1
0
0
25
50
75 85
100
125
Ambient Temperature (°C)
FIGURE 4. Package Power Dissipation vs Ambient
Temperature
Package Power Dissipation vs Ambient Temperature
JEDEC JESD51-3 Low Effective Thermal Conductivity Test Board
0.6
Power Dissipation (W)
0.5
486mW
0.4
θ
MS
OP
8/1
20
0
6°
C/
W
JA =
0.3
0.2
0.1
0
0
25
50
75 85
Ambient Temperature (°C)
10
100
125
Power Supply Bypassing and Printed Circuit
Board Layout
The EL5128 can provide gain at high frequency. As with any
high-frequency device, good printed circuit board layout is
necessary for optimum performance. Ground plane
construction is highly recommended, lead lengths should be
as short as possible and the power supply pins must be well
bypassed to reduce the risk of oscillation. For normal single
supply operation, where the VS- pin is connected to ground,
a 0.1µF ceramic capacitor should be placed from VS+ to pin
to VS- pin. A 4.7µF tantalum capacitor should then be
connected in parallel, placed in the region of the amplifier.
One 4.7µF capacitor may be used for multiple devices. This
same capacitor combination should be placed at each
supply pin to ground if split supplies are to be used.
EL5128
All Intersil U.S. products are manufactured, assembled and tested utilizing ISO9000 quality systems.
Intersil Corporation’s quality certifications can be viewed at www.intersil.com/design/quality
Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design, software and/or specifications at any time without
notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
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11