Fast Operational Amplifier Features General Description # # # # # # # The ELH0032 is a high slew rate, high input impedance differential operational amplifier suitable for diverse application in fast signal handling. The high allowable differential input voltage, ease of output clamping, and high output drive capability make the ELH0032 particularly suitable for comparator applications. It may be used in applications normally reserved for video amplifiers allowing the use of operational gain setting and frequency response shaping into the megahertz region. 500 V/ms slew rate 70 MHz bandwidth 1012X input impedance 5 mV max. input offset voltage FET input Offset nulls with single pot No compensation required for gains above 50 # Peak output current to 100 mA # MIL-STD-883 devices 100% manufactured in U.S.A. Ordering Information Part No. Temp. Range Pkg. OutlineÝ ELH0032G/883B b 55§ C to a 125§ C TO-8 MDP0002 8001301ZX is the SMD version of this device. Connection Diagram ELH0032G/883/8001301ZX ELH0032G/883/8001301ZX The ELH0032’s wide bandwidth, high input impedance and high output drive capability make it an ideal choice for applications such as summing amplifiers in high-speed D to A’s, buffers in data acquisition systems, and sample and hold circuits. Additional applications include high-speed integrators and video amplifiers. The ELH0032 is guaranteed over the temperature range b 55§ C to a 125§ C. Elantec facilities comply with MIL-I-45208A and other applicable quality specifications. Elantec’s Military devices are 100% fabricated and assembled in our rigidly controlled, ultra-clean facilities in Milpitas, California. For additional information on Elantec’s Quality and Reliability Assurance policy and procedures request brochure QRA-1. Simplified Schematic 0032 – 1 Top View Case is electrically isolated. Manufactured under U.S. Patent No. 4,746,877 Note: All information contained in this data sheet has been carefully checked and is believed to be accurate as of the date of publication; however, this data sheet cannot be a ‘‘controlled document’’. Current revisions, if any, to these specifications are maintained at the factory and are available upon your request. We recommend checking the revision level before finalization of your design documentation. CMSÝ0032DS © 1986 Elantec, Inc. July 1991 Rev F 0032 – 2 ELH0032G/883/8001301ZX Fast Operational Amplifier Absolute Maximum Ratings TA g 18V Supply Voltage g 15 VS Input Voltage g 30V or g 2 VS Differential Input Voltage Power Dissipation (Note 1) TA e 25§ C 1.5W, derate 100§ C/W to a 125§ C TC e 25§ C 2.2W, derate 70§ C/W to a 125§ C PD TJ TST Operating Temperature Range: ELH0032 Operating Junction Temperature Storage Temperature Lead Temperature (Soldering, 10 seconds) b 55§ C to a 125§ C 175§ C b 65§ C to a 150§ C 300§ C TD is 0.7in VS VIN Important Note: All parameters having Min/Max specifications are guaranteed. The Test Level column indicates the specific device testing actually performed during production and Quality inspection. Elantec performs most electrical tests using modern high-speed automatic test equipment, specifically the LTX77 Series system. Unless otherwise noted, all tests are pulsed tests, therefore TJ e TC e TA. Test Level I II III IV V Test Procedure 100% production tested and QA sample tested per QA test plan QCX0002. 100% production tested at TA e 25§ C and QA sample tested at TA e 25§ C , TMAX and TMIN per QA test plan QCX0002. QA sample tested per QA test plan QCX0002. Parameter is guaranteed (but not tested) by Design and Characterization Data. Parameter is typical value at TA e 25§ C for information purposes only. DC Electrical Characteristics VS e g 15V, TMIN s TA s TMAX, VIN e 0V ELH0032 Description Test Conditions Min VOS Input Offset Voltage DVOS/DT Average Offset Voltage Drift IOS Input Offset Current IB Input Bias Current VINCM Input Voltage Range CMRR Common-Mode Rejection Ratio AVOL Open-Loop Voltage Gain TJ e 25§ C (Note 2) Typ 2 Max Test Level Units 5 I mV 10 I mV 150 I mV/§ C TJ e 25§ C (Note 2) 25 I pA TA e 25§ C (Note 3) 250 IV pA TJ e Max 25 I nA TJ e 25§ C (Note 2) 100 I pA TA e 25§ C (Note 3) 1 IV nA TJ e TMAX 50 I nA 25 g 10 g 12 I V VIN e g 10V 50 60 I dB VO e g 10V, RL e 1 kX, TJ e 25§ C 48 60 I dB VO e g 10V, RL e 1 kX 45 I dB VO e g 10V, f e 1 kHz, RL e 1 kX, TJ e 25§ C 60 I dB VO e g 10V, f e 1 kHz, RL e 1 kX 57 I dB 2 70 TD is 3.7in Parameter ELH0032G/883/8001301ZX Fast Operational Amplifier DC Electrical Characteristics VS e g 15V, TMIN s TA s TMAX, VIN e 0V Ð Contd. VO IS PSRR Description Test Conditions Min Typ g 10 g 13.5 Max Test Level Units I V Output Voltage Swing RL e 1 kX Power Supply Current TJ e 25§ C, IO e 0 mA 21 23 I mA TA e 25§ C, IO e 0 mA (Note 3) 18 20 IV mA I dB 50 I dB 50 I dB Power Supply Rejection Ratio g 5V s VS s 15V 50 a 5V s VS( a ) s a 20V, VS(b) e b15V b 5V t VS( b ) t b 20V, VS( a ) e a 15V 60 TD is 1.9in ELH0032 Parameter Parameter Description Test Conditions Min 350 Typ Max Test Level Units I V/ms 500 IV ns SR Slew Rate AV e a 1, DVIN e 20V tS Settling Time to 1% of Final Value AV e b1, DVIN e 20V 100 tS Settling Time to 0.1% of Final Value AV e b1, DVIN e 20V 300 V ns tR Small Signal Rise Time AV e a 1, DVIN e 1V 8 20 I ns tD Small Signal Delay Time AV e a 1, DVIN e 1V 10 25 I ns 500 Note 1: In order to limit maximum junction temperature to a 175§ C, it may be necessary to operate with VS k g 15V when TA or TC exceeds specific values depending on the PD within the device package. Total PD is the sum of quiescent and load-related dissipation. Note 2: Specification is at 25§ C junction temperature due to requirements of high-speed automatic testing. Actual values at operating temperature will exceed the value at TJ e 25§ C. When supply voltage are g 15V, no-load operating junction temperature may rise 40§ C– 60§ C above ambient and more under load conditions. Accordingly, VOS may change one to several mV, and IB and IOS will change significantly during warm-up. Refer to IB and IOS vs temperature graph for expected values. Note 3: Measured in still air 7 minutes after application of power. 3 TD is 1.3in AC Electrical Characteristics VS e g 15V, RL e 1 kX, TJ e 25§ C ELH0032G/883/8001301ZX Fast Operational Amplifier Typical Performance Curves Maximum Power Dissipation Supply Current vs Supply Voltage Input Voltage Range and Output Voltage vs Supply Voltage Bode Plot (Uncompensated) Bode Plot (Unity Gain Compensation) Large Signal Frequency Response 0032 – 3 4 ELH0032G/883/8001301ZX Fast Operational Amplifier Typical Performance Curves Ð Contd. Common Mode Rejection Ratio vs Frequency Large Signal Pulse Response Large Signal Pulse Response Normalized Input Bias and Offset Current vs Junction Temperature Normalized Input Bias Current During Warm-Up Input Bias Current vs Input Voltage 0032 – 4 Total Input Noise Voltage vs Frequency* Auxiliary Circuits Offset Null Output Short Circuit Protection 0032 – 5 *Noise voltage includes contribution from source resistance. 0032 – 6 0032 – 7 5 ELH0032G/883/8001301ZX Fast Operational Amplifier Typical Applications Unity Gain Amplifier 100X Buffer Amplifier 0032 – 8 TYP BW3 dB e 45 MHz 10X Buffer Amplifier 0032 – 10 0032 – 9 TYP BW3 dB e 10 MHz Non-Compensated Unity Gain Inverter TYP BW3 dB e 5 MHz High-Speed Sample and Hold *Low leakage for minimum drift 0032 – 11 TYP BW3 dB e 70 MHz 0032 – 12 High-Speed Current Mode MUX 0032 – 13 6 ELH0032G/883/8001301ZX Fast Operational Amplifier Input Capacitance Applications Information The input capacitance to the ELH0032 is typically 5 pF and thus may form a significant time constant with high value resistors. For optimum performance, the input capacitance to the inverting input should be compensated by a small capacitor across the feedback resistor. The value is strongly dependent on layout and closed loop gain, but will typically be in the neighborhood of several picofarads. Power Supply Decoupling The ELH0032, like most high-speed circuits, is sensitive to layout and stray capacitance. Power supplies should be bypassed as near to pins 10 and 12 as possible with low inductance capacitors such as 0.01 mF disc ceramics. Compensation components should also be located close to the appropriate pins to minimize stray reactances. In the non-inverting configuration, it may be advantageous to bootstrap the case and/or a guard conductor to the inverting input. This serves both to divert leakage currents away from the non-inverting input and to reduce the effective input capacitance. A unity gain follower so treated will have an input capacitance under a 1 pF. Input Current Because the input devices are FETs, the input bias current may be expected to double for each 11§ C junction temperature rise. This characteristic is plotted in the typical performance characteristics graphs. The device will self-heat due to internal power dissipation after application of power, thus raising the FET junction temperature 40§ C – 60§ C above the free-air ambient temperature when supplies are g 15V. The device temperature will stabilize within 5 –10 minutes after application of power, and the input bias currents measured at the time will be indicative of normal operating currents. An additional rise will occur as power is delivered to a load due to additional internal power dissipation. Heatsinking While the ELH0032 is specified for operation without any explicit heatsink, internal power dissipation does cause a significant temperature rise. Improved bias current performance can thus be obtained by limiting this temperature rise with a small heat sink such as the Thermalloy No. 2241 or equivalent. The case of the device has no internal connection, so it may be electrically connected to the sink if this is advantageous. Be aware, however, that this will affect the stray capacitances to all pins and may thus require adjustment of circuit compensation values. There is an additional effect on input bias current as the input voltage is changed. The effect, common to all FETs, is an avalance-like increase in gate current as the FET gate-to-drain voltage is increased above a critical value, depending on FET geometry and doping levels. This effect will be noted as the input voltage of the ELH0032 is taken below ground potential when the supplies are g 15V. All of the effects described here may be minimized by operating the device with VS s g 15V. Burn-In Circuit (Functional Diagram) These effects are indicated in the typical performance curves. 0032 – 14 7 ELH0032G/883/8001301ZX TAB WIDE Fast Operational Amplifier ELH0032 Macromodel a input l l l l l l l l l b input l l l l l l l l a Vsupply l l l l l l l b Vsupply l l l l l l Comp 3 Comp 4 l * l l Comp 2 * l l l Output * l l l l * l l l l .subckt M0032 6 5 12 10 3 4 2 11 * Models .model qfa njf (vto eb2.5V beta e 1.11eb3 cgd e 2pF cgs e 5pF m e 0.3744) .model qp pnp (is e 5eb14 bf e 150 vaf e 100 ikf e 100mA tf e .53nS vtf e 0 ise e 1nA a cjc e 4pF cje e 5.7pF tr e 170nS rb e 3 br e 5 mje e .32 mjc e .43 xtb e 2.1 ne e 4 a isc e 1nA nc e 4 itf e .4 vtf e 4 xtf e 6) .model qn npn (is e 5eb14 bf e 150 vaf e 800 ikf e 200mA tf e .53nS vtf e 0 a cjc e 4pF cje e 5pF rb e 3 br e 5 mje e .42 MJC e .23 tr e 200nS xtb e 2.1 a ise e 4nA ne e 4 isc e 4nA nc e 4 itf e .4 vtf e 4 xtf e 2) .model qfb njf (vto eb2.8V beta e 4eb3 cgd e 7pF cgs e 8pF lambda e 4eb3) .model zener d (bv e 2.49V ibv e 1mA) * Resistors and Capacitors r1 12 4 700 r2 12 3 700 r3 12 105 160 r4 103 100 10 r5 108 100 10 r6 12 101 22K r7 113 11 10 r8 11 112 10 r9 102 10 407 cs2 10 116 100pF * Transistors and Diodes j1a 4 5 103 qfa j1b 3 6 108 qfa j2 111 10 116 qfb q1 104 4 105 qp q2 2 3 105 qp q3 114 11 104 qp q4 12 2 113 qn q5 10 111 112 qp q6 2 2 110 qn q7 111 111 110 qp q8 100 101 102 qn d1 10 117 zener q9 101 101 117 qn q10 114 114 10 qn q11 116 114 10 qn .ends 8 TD is 6.6in * Connections: * * * * * ELH0032G/883/8001301ZX Fast Operational Amplifier ELH0032 Macromodel Ð Contd. 0032 – 15 9 10 BLANK 11 BLANK ELH0032G/883/8001301ZX ELH0032G/883/8001301ZX Fast Operational Amplifier General Disclaimer Specifications contained in this data sheet are in effect as of the publication date shown. Elantec, Inc. reserves the right to make changes in the circuitry or specifications contained herein at any time without notice. Elantec, Inc. assumes no responsibility for the use of any circuits described herein and makes no representations that they are free from patent infringement. July 1991 Rev F WARNING Ð Life Support Policy Elantec, Inc. products are not authorized for and should not be used within Life Support Systems without the specific written consent of Elantec, Inc. Life Support systems are equipment intended to support or sustain life and whose failure to perform when properly used in accordance with instructions provided can be reasonably expected to result in significant personal injury or death. Users contemplating application of Elantec, Inc. products in Life Support Systems are requested to contact Elantec, Inc. factory headquarters to establish suitable terms & conditions for these applications. Elantec, Inc.’s warranty is limited to replacement of defective components and does not cover injury to persons or property or other consequential damages. Elantec, Inc. 1996 Tarob Court Milpitas, CA 95035 Telephone: (408) 945-1323 (800) 333-6314 Fax: (408) 945-9305 European Office: 44-71-482-4596 12 Printed in U.S.A.