e PTB 20134 30 Watts, 860–900 MHz Cellular Radio RF Power Transistor Description The 20134 is a class AB, NPN, common emitter RF power transistor intended for 25 Vdc operation from 860 to 900 MHz. Rated at 30 watts minimum output power, it may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability. 100% lot traceability is standard. 30 Watts, 860–900 MHz Class AB Characteristics 50% Min Collector Efficiency at 30 Watts Gold Metallization Silicon Nitride Passivated Typical Output Power vs. Input Power Output Power (Watts) 50 VCC = 25 V 40 ICQ = 100 mA f = 900 MHz 201 34 30 LOT COD E 20 10 0 0 1 2 3 4 5 Package 20201 Input Power (Watts) Maximum Ratings Parameter Symbol Value Unit Collector-Emitter Voltage VCER 40 Vdc Collector-Base Voltage VCBO 50 Vdc Emitter-Base Voltage (collector open) VEBO 4.0 Vdc Collector Current (continuous) IC 8.0 Adc Total Device Dissipation at Tflange = 25°C PD 80 Watts 0.45 W/°C Above 25°C derate by Storage Temperature Range TSTG –40 to +150 °C Thermal Resistance (Tflange = 70°C) RθJC 2.2 °C/W 1 9/28/98 e PTB 20134 Electrical Characteristics (100% Tested) Characteristic Conditions Symbol Min Typ Max Units Breakdown Voltage C to E IB = 0 A, IC = 100 mA V(BR)CEO 25 30 — Volts Breakdown Voltage C to E VBE = 0 V, IC = 100 mA V(BR)CES 55 70 — Volts Breakdown Voltage E to B IC = 0 A, IE = 5 mA V(BR)EBO 3.5 5 — Volts DC Current Gain VCE = 5 V, IC = 1 A hFE 20 50 100 — Symbol Min Typ Max Units Gain (VCC = 25 Vdc, Pout = 30 W, ICQ = 100 mA, f = 900 MHz) Gpe 8 9.5 — dB Collector Efficiency (VCC = 25 Vdc, Pout = 30 W, ICQ = 100 mA, f = 900 MHz) ηC 50 — — % Intermodulation Distortion (VCC = 25 Vdc, Pout = 30 W(PEP), ICQ = 100 mA, f = 900 MHz, ∆f = 1 MHz) IMD — -30 — dBc Load Mismatch Tolerance (VCC = 25 Vdc, Pout = 30 W, ICQ = 100 mA, f = 900 MHz—all phase angles at frequency of test) Ψ — — 30:1 — RF Specifications (100% Tested) Characteristic Typical Performance Gain & Efficiency vs. Frequency (as measured in a broadband circuit) 13 80 70 Efficiency (%) 11 10 9 60 50 VCC = 25 V Gain (dB) ICQ = 100 mA 8 7 850 POUT = 30 W 860 40 Efficiency (%) Gain (dB) 12 870 880 890 900 30 20 910 Frequency (MHz) Ericsson Components RF Power Products 675 Jarvis Drive Morgan Hill, CA 95037 USA Telephone: 408-778-9434 1-877-GOLDMOS (1-877-465-3667) e-mail: [email protected] www.ericsson.com/rfpower 2 Specifications subject to change without notice. LF © Ericsson Components AB 1995 EUS/KR 1301-PTB 20134 Uen Rev. D 09-28-98