e PTB 20017 150 Watts, 860–900 MHz Cellular Radio RF Power Transistor Description The 20017 is a class AB, NPN, common emitter RF power transistor intended for 25 Vdc operation across the 860 to 900 MHz cellular radio frequency band. Rated at 150 watts minimum output power, it may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability. 100% lot traceability is standard. 150 Watts, 860–900 MHz Class AB Characteristics 50% Collector Efficiency at 150 Watts Gold Metallization Silicon Nitride Passivated Typical Output Power vs. Input Power Output Power (Watts) 240 200 160 200 17 LOT 120 80 VCC = 25 V 40 ICQ = 200 mA (per side) f = 900 MHz COD E 0 0 7 14 21 28 35 Input Power (Watts) Package 20224 Maximum Ratings Parameter Symbol Value Unit Collector-Emitter Voltage VCER 40 Vdc Collector-Base Voltage VCBO 60 Vdc Emitter-Base Voltage (collector open) VEBO 4.0 Vdc Collector Current (continuous) IC 25 Adc Total Device Dissipation at Tflange = 25°C PD 330 Watts 1.89 W/°C Above 25°C derate by Storage Temperature Range TSTG –40 to +150 °C Thermal Resistance (Tflange = 70°C) RθJC 0.53 °C/W 1 9/28/98 e PTB 20017 Electrical Characteristics (100% Tested) Characteristic Conditions Symbol Min Typ Max Units Breakdown Voltage C to E IB = 0 A, IC = 100 mA V(BR)CEO 25 30 — Volts Breakdown Voltage C to E VBE = 0 V, IC = 100 mA V(BR)CES 55 70 — Volts Breakdown Voltage E to B IC = 0 A, IE = 5 mA V(BR)EBO 3.5 5 — Volts DC Current Gain VCE = 5 V, IC = 1 A hFE 20 50 100 — Symbol Min Typ Max Units Gain (VCC = 25 Vdc, Pout = 150 W, ICQ = 200 mA per side, f = 900 MHz) Gpe 8.0 9.0 — dB Collector Efficiency (VCC = 25 Vdc, Pout = 150 W, ICQ = 200 mA per side, f = 900 MHz) ηC 50 — — % Intermodulation Distortion (VCC = 25 Vdc, Pout = 150 W(PEP), ICQ = 200 mA per side, f1 = 899 MHz, f2 = 900 MHz) IMD — -28 — dBc Load Mismatch Tolerance (VCC = 25 Vdc, Pout = 150 W(PEP), ICQ = 200 mA per side f = 900 MHz—all phase angles at frequency of test) Ψ — — 5:1 — RF Specifications (100% Tested) Characteristic Impedance Data (data shown for fixed-tuned broadband circuit) (VCC = 25 Vdc, Pout = 150 W, ICQ = 200 mA per side) Z Source Frequency Z Load Z Source Z Load MHz R jX R jX 860 3.4 -6.7 3.5 -3.1 880 3.1 -6.1 3.4 -2.6 900 2.9 -5.6 3.2 -2.1 2 e PTB 20017 Typical Performance Gain & Efficiency vs. Frequency (as measured in a broadband circuit) 11 80 10 70 9 60 8 50 Efficiency (%) 7 VCC = 25 V 40 6 ICQ = 200 mA (per side) Pout = 150 Watts CW 30 5 840 855 870 885 900 Efficiency (%) Gain (dB) Gain (dB) 20 915 Frequency (MHz) Ericsson Components RF Power Products 675 Jarvis Drive Morgan Hill, CA 95037 USA Telephone: 408-778-9434 1-877-GOLDMOS (1-877-465-3667) e-mail: [email protected] www.ericsson.com/rfpower 3 Specifications subject to change without notice. LF © Ericsson Components AB 1994 EUS/KR 1301-PTB 20017 Uen Rev. D 09-28-98