e PTB 20111 85 Watts, 860–900 MHz Cellular Radio RF Power Transistor Description The 20111 is a class AB, NPN, common emitter RF power transistor intended for 25 Vdc operation from 860 to 900 MHz. Rated at 85 watts minimum output power, it may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability. 100% lot traceability is standard. 25 Volt, 860–900 MHz Characteristics - Output Power = 85 Watts - Collector Efficiency = 50% at 85 Watts - IMD = -30 dBc Max at 60 W(PEP) Class AB Characteristics Gold Metallization Silicon Nitride Passivated Typical Output Power vs. Input Power Output Power (Watts) 100 80 2011 1 60 LOT COD E 40 VCC = 25 V ICQ = 200 mA f = 900 MHz 20 0 0 4 8 12 16 Package 20216 Input Power (Watts) Maximum Ratings Parameter Symbol Value Unit Collector-Emitter Voltage VCER 40 Vdc Collector-Base Voltage VCBO 65 Vdc Emitter-Base Voltage (collector open) VEBO 4.0 Vdc Collector Current (continuous) IC 20 Adc Total Device Dissipation at Tflange = 25°C PD 159 Watts 0.91 W/°C Above 25°C derate by Storage Temperature Range TSTG –40 to +150 °C Thermal Resistance (Tflange = 70°C) RθJC 1.1 °C/W 1 9/28/98 e PTB 20111 Electrical Characteristics (100% Tested) Characteristic Conditions Symbol Min Typ Max Units Breakdown Voltage C to E IB = 0 A, IC = 100 mA V(BR)CEO 25 30 — Volts Breakdown Voltage C to E VBE = 0 V, IC = 100 mA V(BR)CES 55 70 — Volts Breakdown Voltage E to B IC = 0 A, IE = 5 mA V(BR)EBO 3.5 5 — Volts DC Current Gain VCE = 5 V, IC = 1 A hFE 20 50 100 — Symbol Min Typ Max Units Gain (VCC = 25 Vdc, Pout = 85 W, ICQ = 200 mA, f = 900 MHz) Gpe 8.5 9.5 — dB Collector Efficiency (VCC = 25 Vdc, Pout = 85 W, ICQ = 200 mA, f = 900 MHz) ηC 50 — — % Ψ — — 10:1 — RF Specifications (100% Tested) Characteristic Load Mismatch Tolerance (VCC = 25 Vdc, Pout = 60 W(PEP), ICQ = 200 mA, f = 900 MHz—all phase angles at frequency of test) Impedance Data (data shown for fixed-tuned broadband circuit) (VCC = 25 Vdc, Pout = 85 W, ICQ = 200 mA) Z Source Frequency Z Load Z Source Z Load MHz R jX R jX 860 1.7 -0.8 1.7 -1.6 880 2.0 -1.2 1.8 -1.9 900 1.7 -0.8 1.7 -1.6 2 e PTB 20111 Typical Performance Gain vs. Frequency Intermodulation Distortion vs. Power Output (as measured in a broadband circuit) 11 -20 -24 IMD (dBc) Gain (dB) 10 9 VCC = 25 V ICQ = 200 mA Pout = 85 W 8 7 860 -28 VCC = 25 V -32 ICQ = 200 mA f1 = 899.95 MHz -36 f2 = 900.00 MHz -40 870 880 890 900 20 30 Frequency (MHz) Efficiency vs. Output Power 50 60 70 80 90 Output Power vs. Supply Voltage 100 Output Power (Watts) 60 50 Efficiency (%) 40 Output Power (Watts-PEP) 40 30 20 VCC = 25 V 10 ICQ = 200 mA f = 900 MHz 90 80 70 ICQ = 200 mA Pin = 10 W f = 900 MHz 60 50 0 45 50 55 60 65 70 75 80 85 18 90 Output Power (Watts) Ericsson Components RF Power Products 675 Jarvis Drive Morgan Hill, CA 95037 USA Telephone: 408-778-9434 20 22 24 26 28 Vcc, Supply Voltage 1-877-GOLDMOS (1-877-465-3667) e-mail: [email protected] www.ericsson.com/rfpower 3 Specifications subject to change without notice. LF © Ericsson Components AB 1995 EUS/KR 1301-PTB 20111 Uen Rev. D 09-28-98