e PTB 20144 6 Watts, 915–960 MHz Cellular Radio RF Power Transistor Description The 20144 is a class AB, NPN, common emitter RF power transistor intended for 25 Vdc operation from 915 to 960 MHz. Rated at 6 watts minimum output power, it may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability. 100% lot traceability is standard. 6 Watts, 915–960 MHz Class AB Characteristics 50% Typ Collector Efficiency at 6 Watts Tested to solderability standards: - IEC-68-2-54 - ANSI/J Std-002-A Gold Metallization Silicon Nitride Passivated Typical Output Power vs. Input Power Output Power (Watts) 12 10 8 VCC = 25 V ICQ = 50 mA f = 960 MHz 20 LO 6 14 TC O DE 4 4 2 0 0.00 0.25 0.50 0.75 1.00 1.25 Input Power (Watts) Package 20208 Maximum Ratings Parameter Symbol Value Unit Collector-Emitter Voltage VCER 55 Vdc Collector-Base Voltage VCBO 60 Vdc Emitter-Base Voltage (collector open) VEBO 4.0 Vdc Collector Current (continuous) IC 1.7 Adc Total Device Dissipation at Tflange = 25°C PD 22 Watts 0.125 W/°C Above 25°C derate by Storage Temperature Range Tstg –40 to +150 °C Thermal Resistance (Tflange = 70°C) RθJC 8 °C/W 1 9/28/98 e PTB 20144 Electrical Characteristics (100% Tested) Characteristic Conditions Symbol Min Typ Max Units Breakdown Voltage C to E IB = 0 A, IC = 50 mA V(BR)CEO 24 30 — Volts Breakdown Voltage C to E VBE = 0 V, IC = 50 mA V(BR)CES 60 70 — Volts Breakdown Voltage E to B IC = 0 A, IE = 5 mA V(BR)EBO 3.5 5 — Volts DC Current Gain VCE = 5 V, IC = 1 A hFE 20 50 120 — Symbol Min Typ Max Units Gain (VCC = 25 Vdc, Pout = 6 W, ICQ = 50 mA, f = 960 MHz) Gpe 9 10 — dB Collector Efficiency (VCC = 25 Vdc, Pout = 6 W, ICQ = 50 mA, f = 960 MHz) ηC — 50 — % Ψ — — 30:1 — RF Specifications (100% Tested) Characteristic Load Mismatch Tolerance (VCC = 25 Vdc, Pout = 6 W, ICQ = 50 mA, f = 960 MHz—all phase angles at frequency of test) Impedance Data (data shown for fixed-tuned broadband circuit) (VCC = 25 Vdc, Pout = 6 W, ICQ = 50 mA) Z Source Frequency Z Load Z Source Z Load MHz R jX R jX 915 2.5 -1.4 6.3 9.8 960 2.6 -0.8 7.0 12.4 2 e PTB 20144 Typical Performance Gain & Efficiency vs. Frequency (as measured in a broadband circuit) 11 80 70 Gain 9 8 60 50 Efficiency VCC = 25 V 7 ICQ = 50 mA Pout = 6 W 6 5 900 915 930 945 960 40 Efficiency (%) Gain (dB) 10 30 20 975 Frequency (MHz) Ericsson Components RF Power Products 675 Jarvis Drive Morgan Hill, CA 95037 USA Telephone: 408-778-9434 1-877-GOLDMOS (1-877-465-3667) e-mail: [email protected] www.ericsson.com/rfpower 3 Specifications subject to change without notice. LF © Ericsson Components AB 1995 EUS/KR 1301-PTB 20144 Uen Rev. D 09-28-98