e PTB 20038 25 Watts, 860–900 MHz Cellular Radio RF Power Transistor Description The 20038 is a class AB, NPN, common emitter RF power transistor intended for 25 Vdc operation across the 860 to 900 MHz frequency band. Rated at 25 watts minimum output power, it may be used for both CW and PEP applications. It is specifically designed for high efficiency operation at average power levels around 10 watts with high PEP capacity. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability. 100% lot traceability is standard. 25 Watts, 860–900 MHz Class AB Characteristics Gold Metallization Silicon Nitride Passivated Typical Output Power vs. Input Power 40 Output Power (Watts) 35 30 25 200 38 20 LOT 15 VCC = 25 V 10 ICQ = 100 mA f = 900 MHz 5 CO DE 0 0 1 2 3 4 5 Package 20200 Input Power (Watts) Maximum Ratings Parameter Symbol Value Unit Collector-Emitter Voltage VCER 40 Vdc Collector-Base Voltage VCBO 50 Vdc Emitter-Base Voltage (collector open) VEBO 4.0 Vdc Collector Current (continuous) IC 6.7 Adc Total Device Dissipation at Tflange = 25°C PD 65 Watts 0.37 W/°C Above 25°C derate by Storage Temperature Range TSTG –40 to +150 °C Thermal Resistance (Tflange = 70°C) RθJC 2.7 °C/W 1 9/28/98 e PTB 20038 Electrical Characteristics (100% Tested) Characteristic Conditions Symbol Min Typ Max Units Breakdown Voltage C to E IB = 0 A, IC = 100 mA V(BR)CEO 25 30 — Volts Breakdown Voltage C to E VBE = 0 V, IC = 100 mA V(BR)CES 55 70 — Volts Breakdown Voltage E to B IC = 0 A, IE = 5 mA V(BR)EBO 3.5 5 — Volts DC Current Gain VCE = 5 V, IC = 1 A hFE 20 50 100 — Symbol Min Typ Max Units Gain (VCC = 25 Vdc, Pout = 25 W, ICQ = 100 mA, f = 900 MHz) Gpe 9.0 10.0 — dB Collector Efficiency (VCC = 25 Vdc, Pout = 25 W, ICQ = 100 mA, f = 900 MHz) ηC 50 — — % Gain (VCC = 25 Vdc, Pout = 10 W, ICQ = 100 mA, f = 900 MHz) Gpe 10 11 — dB Collector Efficiency (VCC = 25 Vdc, Pout = 10 W, ICQ = 100 mA, f = 900 MHz) ηC 35 — — % Ψ — — 30:1 — RF Specifications (100% Tested) Characteristic Load Mismatch Tolerance (VCC = 25 Vdc, Pout = 10 W, ICQ = 100 mA, f = 900 MHz—all phase angles at frequency of test) Typical Performance Efficiency vs. Frequency 80 (as measeured in a broadband circuit) Pout = 25 W 70 Efficiency (%) 60 Pout = 10 W 50 40 VCC = 25 V 30 ICQ = 100m A Circuit Tuned for 25 W Load Line 20 10 0 840 855 870 885 900 915 Frequency (MHz) Ericsson Components RF Power Products 675 Jarvis Drive Morgan Hill, CA 95037 USA Telephone: 408-778-9434 1-877-GOLDMOS (1-877-465-3667) e-mail: [email protected] www.ericsson.com/rfpower 2 Specifications subject to change without notice. LF © Ericsson Components AB 1994 EUS/KR 1301-PTB 20038 Uen Rev. D 09-28-98