e PTB 20145 9 Watts, 915–960 MHz Cellular Radio RF Power Transistor Description The 20145 is a class AB, NPN, common emitter RF power transistor intended for 25 Vdc operation from 915 to 960 MHz. Rated at 9 watts minimum output power, it may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability. 100% lot traceability is standard. 9 Watts, 915–960 MHz Class AB Characteristics 50% Min Collector Efficiency at 9 Watts Tested to solderability standards: - IEC-68-2-54 - ANSI/J Std-002-A Gold Metallization Silicon Nitride Passivated Surface Mountable Available in Tape and Reel Typical Output Power vs. Input Power Output Power (Watts) 12 10 20 8 LO 14 TC O DE 5 6 4 VCC = 25V 2 ICQ = 50 mA f = 960 MHz 0 0.00 0.25 0.50 0.75 1.00 1.25 Input Power (Watts) Package 20208 Maximum Ratings Parameter Symbol Value Unit Collector-Emitter Voltage VCER 55 Vdc Collector-Base Voltage VCBO 60 Vdc Emitter-Base Voltage (collector open) VEBO 4.0 Vdc Collector Current (continuous) IC 2.6 Adc Total Device Dissipation at Tflange = 25°C PD 33 Watts 0.19 W/°C Above 25°C derate by Storage Temperature Range TSTG –40 to +150 °C Thermal Resistance (Tflange = 70°C) RθJC 5.3 °C/W 1 9/28/98 e PTB 20145 Electrical Characteristics (100% Tested) Characteristic Conditions Symbol Min Typ Max Units Breakdown Voltage C to E IB = 0 A, IC = 50 mA V(BR)CEO 24 30 — Volts Breakdown Voltage C to E VBE = 0 V, IC = 50 mA V(BR)CES 65 70 — Volts Breakdown Voltage E to B IC = 0 A, IE = 250 mA V(BR)EBO 3.5 5 — Volts DC Current Gain VCE = 5 V, IC = 1 A hFE 20 50 120 — Symbol Min Typ Max Units Gain (VCC = 25 Vdc, Pout = 9 W, ICQ = 50 mA, f = 960 MHz) Gpe 9 10 — dB Collector Efficiency (VCC = 25 Vdc, Pout = 9 W, ICQ = 50 mA, f = 960 MHz) ηC 50 — — % Ψ — — 30:1 — RF Specifications (100% Tested) Characteristic Load Mismatch Tolerance (VCC = 25 Vdc, Pout = 9 W, ICQ = 50 mA, f = 960 MHz—all phase angles at frequency of test) Impedance Data (data shown for fixed-tuned broadband circuit) (VCC = 25 Vdc, Pout = 9 W, ICQ = 50 mA) Z Source Frequency Z Load Z Source Z Load MHz R jX R jX 915 2.2 -2.5 3.4 7.1 937 2.2 -2.4 3.5 7.9 960 2.1 -2.2 3.7 8.6 2 e PTB 20145 Typical Performance Gain & Efficiency vs. Frequency (as measured in a broadband circuit) 11 80 10 70 9 60 8 Efficiency (%) 50 7 Vcc = 25 V ICQ = 50 mA 40 6 POUT = 9 W 30 5 915 930 945 Efficiency (%) Gain (dB) Gain (dB) 20 960 Frequency (MHz) Ericsson Components RF Power Products 675 Jarvis Drive Morgan Hill, CA 95037 USA Telephone: 408-778-9434 1-877-GOLDMOS (1-877-465-3667) e-mail: [email protected] www.ericsson.com/rfpower 3 Specifications subject to change without notice. LF © Ericsson Components AB 1995 EUS/KR 1301-PTB 20145 Uen Rev. D 09-28-98