PTF 10160 85 Watts, 860–960 MHz GOLDMOS ® Field Effect Transistor Description • • The PTF 10160 is an internally matched 85–watt GOLDMOS FET intended for cellular, GSM, D-AMPS and EDGE applications. It operates with 53% efficiency and 16 dB typical gain. Full gold metallization ensures excellent device lifetime and reliability. • • • • INTERNALLY MATCHED Performance at 960 MHz, 26 Volts - Output Power = 85 Watts - Power Gain = 16 dB Typ - Efficiency = 53% Typ Full Gold Metallization Silicon Nitride Passivated Excellent Thermal Stability 100% Lot Traceability Typical Output Power& Efficiency vs. Input Power 120 70 60 Efficiency 50 80 40 VDD = 26 V 60 30 IDQ = 700 mA f = 960 MHz 40 20 20 Efficiency (%) Output Power (Watts) 100 1016 0 1234 5600 55A 10 Output Power 0 0 0 1 2 3 4 5 Package 20248 Input Power (Watts) RF Specifications (100% Tested) Characteristic Gain (VDD = 26 V, POUT = 85 W, IDQ = 700 mA, f = 960 MHz) Power Output at 1 dB Compression (VDD = 26 V, IDQ = 700 mA, f = 960 MHz) Drain Efficiency (VDD = 26 V, POUT = 85 W, IDQ = 700 mA, f = 960 MHz) Load Mismatch Tolerance (VDD = 26 V, POUT = 85 W, IDQ = 700 mA, f = 960 MHz —all phase angles at frequency of test) Symbol Min Typ Max Units Gpe 15 16 — dB P-1dB 85 90 — Watts h 50 53 — % Y — — 5:1 — All published data at TCASE = 25°C unless otherwise indicated. e 1 e PTF 10160 Electrical Characteristics Characteristic (100% Tested) Conditions Drain-Source Breakdown Voltage VGS = 0 V, ID = 25 mA Symbol Min Typ Max Units V(BR)DSS 65 — — Volts Drain-Source Leakage Current VDS = 26 V, VGS = 0 V IDSS — — 1.0 mA Gate Threshold Voltage VDS = 10 V, ID = 75 mA VGS(th) 3.0 — 5.0 Volts Forward Transconductance VDS = 10 V, ID = 3 A gfs — 3.0 — Siemens Maximum Ratings Parameter Symbol Value Unit Drain-Source Voltage VDSS 65 Vdc Gate-Source Voltage VGS ±20 Vdc Operating Junction Temperature TJ 200 °C Total Device Dissipation PD 205 Watts 1.18 W/°C Above 25°C derate by Storage Temperature Range TSTG –40 to +150 °C Thermal Resistance (TCASE = 70°C) RqJC 0.85 °C/W 100 16 90 15 Gain (dB) VDD = 26.0 V 80 IDQ = 700 mA 13 12 70 Efficiency (%) 11 10 860 880 900 920 940 60 50 960 Efficiency (%) 50 16 Gain Gain (dB) Output Power (W) Output Power & Efficiency 17 Gain 60 110 18 14 Broadband Test Fixture Performance 20 40 VDD = 26 V 12 030 IDQ = 700 mA POUT = 85 W -205 8 -15 10 Return Loss 4 860 Frequency (MHz) 865 870 875 880 885 Frequency (MHz) 2 890 895 -20 0 900 Return Loss (dB) Typical POUT, Gain & Efficiency (at P-1dB) vs. Frequency Efficiency (%) Typical Performance e PTF 10160 Efficiency (%) 50 16 Gain (dB) Gain 12 VDD = 26 V 40 IDQ = 700 mA -305 POUT = 85 W 20 -15 8 Return Loss 4 920 925 930 935 940 945 950 10 -25 0 -35 960 955 Power Gain vs. Output Power 17 IDQ = 700 mA Power Gain (dB) 60 Return Loss (dB) Efficiency (%) Broadband Test Fixture Performance 20 16 IDQ IDQ = =350 400mA m 15 IDQ = 175 mA 14 VDD = 28 V f = 960 MHz 13 1 10 Frequency (MHz) 100 1000 Output Power (Watts) Intermodulation Distortion vs. Output Power Output Power vs. Supply Voltage (as measured in a broadband circuit) 100 90 VDD = 26 V, IDQ = 700 mA -20 f1 = 960 MHz, f2 = 960.1 MHz 80 IMD (dBc) Output Power (Watts) -10 70 IDQ = 700 mA f = 960 MHz 60 -30 5th -40 7th 50 -50 40 -60 22 24 26 28 30 32 0 300 VGS = 0 V f = 1 MHz 10 Cds Bias Voltage (V) 150 Crss (pF) 15 5 50 0 10 20 30 100 1.01 0.86 1.00 2.5 4.16 0.99 5.8 0.98 7.42 9.06 0.97 Crss 0 80 Voltage normalized to 1.0 V Series show current (A) 1.02 20 Cgs 100 60 1.03 25 200 40 Bias Voltage vs. Temperature Capacitance vs. Voltage * 250 20 Output Power (Watts-PEP) Supply Voltage (Volts) Cds and Cgs (pF) 3rd Order 0 0.96 40 -20 Supply Voltage (Volts) 30 80 Temp. (°C) * This part is internally matched. Measurements of the finished product will not yield these figures. 3 130 e PTF 10160 Spectrum Due to Modulation (Edge Modulation) Without correction circuit 200 kHz = -36 dBc 400 kHz = -57 dBc 600 kHz = -70 dBc 4 e PTF 10160 Impedance Data VDD = 26 V, POUT = 85 W, IDQ = 700 mA D Z Source Z Load Z0 = 50 W G S Z Source W Frequency Z Load W MHz R jX R jX 860 2.1 -1.5 2.6 1.1 880 2.6 -1.6 2.6 1.3 900 3 -1.7 2.6 1.5 920 4.1 -1.7 2.4 1.5 940 6.3 -1.5 2.3 1.65 960 7.1 1.5 2.2 1.8 Test Circuit Test Circuit Schematic for f = 921 to 960 MHz DUT l1, l9 l2 l3 l4 l5 l6 l7 l8 l1, l9 PTF 10160 0.037 l 0.120 l 0.080 l 0.187 l 0.204 l 0.250 l 0.031 l 0.157 l 0.037 l LDMOS Transistor Microstrip 50 W Microstrip 50 W Microstrip 50 W Microstrip 9.29 W Microstrip 6.98 W Microstrip 77.9 W Microstrip 50 W Microstrip 50 W Microstrip 50 W C1, C3, C4, C8 C2 C5 Digi-Key C6 Digi-Key C7 J1, J2 R1, R2, R3 100 B Capacitor, 36 pF 100 B Capacitor, 2.7 pF P4525-ND Capacitor, 0.1 µF, 50 V P5182-ND Capacitor, 100 µF, 50 V ATC 100 B Capacitor, 3.3 pF SMA Panel Mount Female Connector 220 W Resistor, Digi-Key 1K QBK Circuit Board .031" Thickness, e = 4.0, r AlliedSignal, G200, 2 oz. copper 5 e PTF 10160 10160 Components Layout (not to scale) ERICSSON 10160_A OUTPUT Artwork (not to scale) 6 e PTF 10160 Case Outline Specifications Package 20248 Primary dimensions are inches; alternate dimensions are mm. Ericsson Inc. Microelectronics Morgan Hill, CA 95037 USA 1-877-GOLDMOS (465-3667) United States +46 8 757 4700 International e-mail: [email protected] www.ericsson.com/rfpower 7 Specifications subject to change without notice. L3 © 1999, 2000, 2001 Ericsson Inc. EUS/KR 1522-PTF 10160 Uen Rev. A 12-03-00