PTF 10019 70 Watts, 860–960 MHz GOLDMOS™ Field Effect Transistor Description • • The PTF 10019 is an internally matched, 70 Watt LDMOS FET intended for cellular, GSM, and D-AMPS applications in the 860 to 960 MHz range. Nitride surface passivation and full gold metallization ensure excellent device lifetime and reliability. • • • • INTERNALLY MATCHED Performance at 960 MHz, 28 Volts - Output Power = 70 Watts - Power Gain = 14.5 dB Typ - Efficiency = 50% Typ Full Gold Metallization Silicon Nitride Passivated Excellent Thermal Stability 100% Lot Traceability Typical Output Power vs. Input Power 74 Output Power 66 58 60 50 Efficiency 42 40 20 VDD = 28 V 34 IDQ = 600 mA f = 960 MHz 26 Efficiency (%) Output Power (Watts) 80 100 2 3 4 19 568 A-1 955 18 0 10 0.0 1.0 2.0 3.0 4.0 Input Power (Watts) Package 20237 RF Specifications (100% Tested) Characteristic Gain (VDD = 28 V, Pout = 70 W, IDQ = 600 mA, f = 960 MHz) Power Output at 1 dB Compression (VDD = 28 V, IDQ = 600 mA, f = 960 MHz) Drain Efficiency (VDD = 28 V, Pout = 70 W, IDQ = 600 mA, f = 960 MHz) Load Mismatch Tolerance (VDD = 28 V, Pout = 70 W, IDQ = 600 mA, f = 960 MHz —all phase angles at frequency of test) Symbol Min Typ Max Units Gpe 13.0 14.5 — dB P-1dB 70 75 — Watts h 45 50 — % Y — — 10:1 — All published data at TCASE = 25°C unless otherwise indicated. e 1 e PTF 10019 Electrical Characteristics (100% Tested) Characteristic Conditions Symbol Min Typ Max Units Drain-Source Breakdown Voltage VGS = 0 V, ID = 25 mA V(BR)DSS 65 — — Volts Drain-Source Leakage Current VDS = 26 V, VGS = 0 V IDSS — — 1.0 mA Gate Threshold Voltage VDS = 10 V, ID = 75 mA VGS(th) 3.0 — 5.0 Volts Forward Transconductance VDS = 10 V, ID = 3 A gfs — 3.0 — Siemens Maximum Ratings Parameter Symbol Value Unit Drain-Source Voltage VDSS 65 Vdc Gate-Source Voltage VGS ±20 Vdc Operating Junction Temperature TJ 200 °C Total Device Dissipation PD 215 Watts 1.25 W/°C Above 25°C derate by Storage Temperature Range TSTG –40 to +150 °C Thermal Resistance (TCASE = 70°C) RqJC 0.8 °C/W Typical Performance Typical POUT, Gain, and Efficiency (at P-1 dB) vs. Frequency 14 80 70 Power Gain (dB) 13 60 Efficiency (%) 12 800 850 900 950 50 1000 60 12 10 8 6 4 900 Frequency (MHz) 50 Efficiency (%) VDD = 28 V, IDQ = 600 mA, POUT = 70 W 915 930 Frequency (MHz) 2 40 - 30 5 -15 20 Return Loss (dB) 945 Efficiency 15 14 -25 10 960 Return Loss Output Power (W) 70 Gain (dB) Gain 90 Output Power and Efficiency Power Gain @ P-1dB 16 Broadband Test Fixture Performance 16 e PTF 10019 Output Power (at P-1dB) vs. Supply Voltage Power Gain vs. Output Power 90 17 IDQ = 600 mA 16 15 IDQ = 300 mA 14 13 12 IDQ = 150 mA 11 85 80 75 70 65 f = 960 MHz IDQ = 600 mA 60 55 10 0.1 1.0 10.0 23 100.0 25 Output Power (Watts) 180 3rd Order f1 = 959.900 MHz f2 = 960.000 MHz 5th -40 7th 33 20 18 VGS = 0 V f = 1 MHz 160 140 16 14 Cgs 120 12 100 -50 10 80 8 Cds 60 40 6 4 Crss 20 2 0 -60 0 10 20 30 40 50 60 70 0 0 80 Output Power (Watts-PEP) 10 20 30 40 Supply Voltage (Volts) * This part is internally matched. Measurements of the finished product will not yield these figures. Bias Voltage vs. Temperature Voltage normalized to 1.0 V Series show current (A) 1.04 Bias Voltage (V) IMD (dBc) Cds and Cgs (pF) VDD = 28 V IDQ = 600 mA 31 Capacitance vs. Voltage * 200 -10 -30 29 Drain-Source Voltage (Volts) Intermodulation Distortion vs. Output Power -20 27 1.02 0.40 1.32 1.00 2.25 3.17 0.98 4.09 5.02 0.96 0.94 -20 30 80 Temp. (°C) 3 130 Crss (pF) Gain (dB) Output Power (Watts) 18 e PTF 10019 Impedance Data Z0 = 10 W (VDD = 28 V, Pout = 70 W, IDQ = 600 mA) D Z Source Z Load G S Z Source W Frequency Z Load W MHz R jX R jX 840 0.9 0 2.3 1.7 860 1.0 -0.2 2.0 1.6 900 1.2 -0.4 1.8 1.6 920 1.2 -0.4 1.7 1.6 960 1.8 -0.7 1.6 1.7 980 2.2 -0.6 1.6 1.8 Test Circuit Test Circuit Schematic for f = 960 MHz DUT l1, l6 l2 l3 l4 l5 C1, C2, C4, C6 C3 C5 PTF 10019 Microstrip 50 W 0.125 l 960 GHz 0.186 l 960 GHz 0.200 l 960 GHz 0.060 l 960 GHz 36 pF 3.6 pF 0.01 mF LDMOS Field Effect Transistor Microstrip 50 W Microstrip 10 W Microstrip 7.5 W Microstrip 50 W Chip Cap ATC 100 B Chip Cap ATC 100 A Capacitor Digi-Key P4917-ND 4 C7 C8 L1 R1, R2, R3 R4 Circuit Board 50 mF, 35 V Electrolytic Capacitor, Digi-Key P5276 1.7 pF Chip Cap ATC 100 B 4 Turn, #20 AWG, .120"I.D. 220 W, 1/4 W Resistor 10K W, 1/4 W Resistor .028" Dielectric Thickness, er = 4.0, AlliedSignal, G200, 2 oz. copper e PTF 10019 10019 Components Layout (not to scale) Artwork (1 inch ) Ericsson Microelectronics RF Power Products Morgan Hill, CA 95037 USA 1-877-GOLDMOS (465-3667) United States +46 8 757 4700 International e-mail: [email protected] www.ericsson.com/rfpower 5 Specifications subject to change without notice. L3 © 1997 Ericsson Inc. EUS/KR 1301-PTF 10019 Uen Rev. A 10-22-99 e Notes: 6