PTF 10134 100 Watts, 2.1–2.2 GHz GOLDMOS ® Field Effect Transistor Description The PTF 10134 is an internally matched GOLDMOS FET intended for WCDMA applications from 2.1 to 2.2 GHz. It is rated at 100 watts power output and operates with 10 dB typical gain. Nitride surface passivation and gold metallization ensure excellent device lifetime and reliability. • INTERNALLY MATCHED • Guaranteed Performance at 2.17 GHz, 28 V - Output Power = 100 Watts Min - Power Gain = 10 dB Typ • Full Gold Metallization • Excellent Thermal Stability • 100% Lot Traceability Typical Output Power & Efficiency vs. Input Power 120 48 Output Power 40 Efficiency 80 32 60 24 40 VDD = 28 V 16 20 IDQ = 1.3 A Total f = 2170 MHz 8 0 Efficiency (%) X Output Power (Watts) 100 101 569934 53 1234 A 0 0 2 4 6 8 10 12 14 Input Power (Watts) Package 20250 RF Specifications (100% Tested) Characteristic Gain (VDD = 28 V, POUT = 30 W, IDQ = 1.3 A Total, f = 2.17 GHz) Power Output at 1.5 dB Compression (VDD = 28 V, IDQ = 1.3 A Total, f = 2.17 GHz) Drain Efficiency (VDD = 28 V, POUT = 100 W, IDQ = 1.3 A Total, f = 2.17 GHz) Load Mismatch Tolerance (VDD = 28 V, POUT = 80 W, IDQ = 1.3 A Total, f = 2.17 GHz —all phase angles at frequency of test) Symbol Min Typ Max Units Gps 9.5 10 — dB P-1dB 100 — — Watts hD — 37 — % Y — — 10:1 — All published data at TCASE = 25°C unless otherwise indicated. e 1 e PTF 10134 Electrical Characteristics (100% Tested—characteristics, conditions and limits shown per side) Characteristic (per side) Conditions Symbol Min Typ Max Units V(BR)DSS 65 — — Volts IDSS — — 5.0 mA VGS(th) 3.0 — 5.0 Volts gfs — 4.0 — Siemens Drain-Source Breakdown Voltage VGS = 0 V, ID = 100 mA Zero Gate Voltage Drain Current VDS = 28 V, VGS = 0 V Gate Threshold Voltage VDS = 10 V, ID = 150 mA Forward Transconductance VDS = 10 V, ID = 2 A Maximum Ratings Parameter Symbol Value Unit Drain-Source Voltage (1) VDSS 65 Vdc Gate-Source Voltage (1) VGS ±20 Vdc Operating Junction Temperature TJ 200 °C Total Device Dissipation PD 440 Watts 2.51 W/°C –40 to +150 °C Above 25°C derate by Storage Temperature Range TSTG Thermal Resistance (TCASE = 70°C) (1) per RqJC 0.39 °C/W side Gain 11 Output Power (W) 10 100 80 Gain (dB) VDD = 28 V 9 60 IDQ = 1.3 A Total 8 7 2100 40 Efficiency (%) 2120 2140 2160 2180 20 2200 50 VDD = 28 V 9 Gain (dB) 120 60 Gain Output Power & Efficiency 12 11 IDQ = 1.3 A Total POUT = 25 W 7 Efficiency 40 - 30 5 20 -15 5 -25 10 Return Loss 3 2100 Frequency (MHz) 2120 2140 2160 Frequency (MHz) 2 -35 0 2180 Return Loss (dB) Broadband Test Fixture Performance Typical POUT , Gain & Efficiency (at P-1dB) vs. Frequency Efficiency (%) Typical Performance e PTF 10134 Power Gain vs. Output Power Output Power vs. Supply Voltage 11 IDQ = 1300 mA 10 IDQ = 650 mA 9 IDQ = 325 mA 8 VDD = 28 V f = 2170 MHz 60 55 IDQ = 1.3 A Total f = 2170 MHz 50 45 40 7 0.1 1.0 10.0 24 100.0 26 28 32 34 Intermodulation Distortion vs. Output Power Capacitance vs. Supply Voltage * (as measured in a broadband circuit) 450 -15 30 Cds and Cgs (pF) 400 VDD = 28 V, IDQ = 1.3 A Total f1 = 2169 MHz, f2 = 2170 MHz IMD (dBc) 3rd Order -35 5th -45 7th -55 VGS = 0 V f = 1 MHz 350 300 25 20 Cgs 250 15 200 Cds 150 10 100 50 -65 5 Crss 0 20 40 60 80 100 120 0 0 10 Output Power (Watts-PEP) 20 30 40 Supply Voltage (Volts) * This part is internally matched. Measurements of the finished product will not yield these results. Bias Voltage vs. Temperature 1.03 Voltage normalized to 1.0 V Series show current (A) 1.02 Bias Voltage (V) 0 36 Supply Voltage (Volts) Output Power (Watts) -25 30 Crss Power Gain (dB) Output Power (Watts) 65 1.01 1.00 0.800 0.99 2.767 0.98 4.733 0.97 6.700 0.96 8.667 0.95 -20 30 Temp. (°C) 3 80 130 e PTF 10134 Impedance Data D Z Load ---> S 2.00 5.76 -14.40 2.10 -1.80 2.05 7.40 -15.60 2.60 -2.60 2.10 9.60 -17.60 3.00 -3.00 2.15 16.00 -17.80 2.80 -3.80 2.20 19.00 -14.60 2.60 -4.00 2.25 22.00 -6.00 2.44 -3.40 2.30 20.00 -1.20 2.60 -2.80 Z Load 2.3 GHz 2.0 GHz 2.3 GHz 0.1 < -- - WA V Z Source 0.2 2.0 GHz 45 0. 5 0.0 0.3 .4 4 0.4 jX 0.3 R 0.2 jX 0.1 R E LE GHz 0.0 Z Load W LOAD S TO W A RD NG T H Z Source W Frequency 0.1 D - WAV E LE NG THS T OW AR D G EN E RA T OR G G Z0 = 50 W 0 .2 Z Source 0.3 (VDD = 28 V, POUT = 100 W, IDQ = 1.3 A Total) e PTF 10134 Test Circuit Test Circuit Block Diagram for f = 2.0 GHz l1 l2, l17 l3, l6 l4, l7 l5, l8 l9, l13 l10, l14 l11, l15 l12, l16 l 18 0.184l 2.0 GHz Microstrip 50 W 0.044l 2.0 GHz Microstrip 26.1 W 0.025l 2.0 GHz Microstrip 43.9 W 0.185l 2.0 GHz Microstrip 67.2 W 0.053l 2.0 GHz Microstrip 8.7 W 0.076l 2.0 GHz Microstrip 8.7 W 0.031l 2.0 GHz Microstrip 9.5 W 0.072l 2.0 GHz Microstrip15.13W 0.341l 2.0 GHz Microstrip 58 W 0.119l 2.0 GHz Microstrip 50 W C1, C2, C3, C4, C5, C6, C15, C16 ATC 100B C7, C8, C13, C14 Digi-Key P4525-ND C9, C10, C11, C12, C19, C20 Digi-Key PC56106-ND C17, C18 ATC 100B C 21 ATC 100B R1, R2, R3, R4 Digi-Key P220ECT-ND L1, L2 TOKO,# LL2012-F2N7S L3, L4 PHILIPS,#BDS31314-6-452 T1, T2 Semi-rigid Coaxial Cable, 50 W Circuit Board Roger Microwave 5 Capacitor, 10 pF Capacitor, 0.1 µF Capacitor, 10 µF 35VDC Capacitor, 0.1 µF Capacitor, 0.3pF Resistor, 220 W Coil, 2.7 nH, SMT Ferrite Bead, 4mm TMM4, er 6.0, THICKNESS 0.30”, 2 OZ COPPER e PTF 10134 Assembly Diagram (not to scale) Artwork (scale approximate) 6 e PTF 10134 Package Mechanical Description Package 20250 Ericsson Inc. Microelectronics Morgan Hill, CA 95037 USA 1-877-GOLDMOS (465-3667) United States +46 8 757 4700 International e-mail: [email protected] www.ericsson.com/rfpower 7 Specifications subject to change without notice. L3 © 1999, 2000, 2001 Ericsson Inc. EUS/KR 1522-PTF 10134 Uen Rev. A 01-16-01