PTF 10153 60 Watts, 1.8–2.0 GHz GOLDMOS ® Field Effect Transistor Description The PTF 10153 is an internally matched 60–watt GOLDMOS FET intended for CDMA and TDMA applications from 1.8 to 2.0 GHz. It operates with 40% efficiency and 11.5 dB minimum gain. Nitride surface passivation and full gold metallization ensure excellent device lifetime and reliability. 90 60 80 70 50 60 50 40 30 40 30 VDD = 28 V 20 IDQ = 650mA f = 1880 MHz 20 10 INTERNALLY MATCHED • Guaranteed Performance at 1805, 1843, 1880 MHz, 28 V - Output Power = 60 Watts Min - Power Gain = 11.5 dB Min • Full Gold Metallization • Silicon Nitride Passivated • Back Side Common Source • Excellent Thermal Stability • 100% Lot Traceability Efficiency (%) Output Power (Watts) Typical Output Power & Efficiency vs. Input Power • 1015 3456 3 99 A-12 53 10 0 0 0 2 4 6 8 10 12 Input Power (Watts) Package 20248 RF Specifications (100% Tested) Characteristic Symbol Min Typ Max Units Gps 11.5 — — dB P-1dB 60 — — Watts Drain Efficiency (VDD = 28 V, POUT = 60 W, IDQ = 650 mA, f = 1805, 1843, 1880 MHz) hD 40 — — % Return Loss (VDD = 28 V, POUT = 60 W, IDQ = 650 mA, f = 1805, 1843, 1880 MHz) — — — –9.5 dB Load Mismatch Tolerance (VDD = 28 V, POUT = 60 W, IDQ = 650 mA, f = 1805 —all phase angles at frequency of test) Y — — 10:1 — Gain (VDD = 28 V, POUT = 60 W, IDQ = 650 mA, f = 1805, 1843, 1880 MHz) Power Output at 1 dB Compression (VDD = 28 V, IDQ = 650 mA, f = 1880 MHz) All published data at TCASE = 25°C unless otherwise indicated. e 1 e PTF 10153 Electrical Characteristics (100% Tested) Characteristic Conditions Symbol Min Typ Max Units Drain-Source Breakdown Voltage VGS = 0 V, ID = 25 mA V(BR)DSS 65 — — Volts Zero Gate Voltage Drain Current VDS = 28 V, VGS = 0 V IDSS — — 1 mA Gate Threshold Voltage VDS = 10 V, ID = 75 mA VGS(th) 3.0 — 5.0 Volts Forward Transconductance VDS = 10 V, ID = 0.5 A gfs 1.0 — — Siemens Maximum Ratings Parameter Symbol Value Unit Drain-Source Voltage VDSS 65 Vdc Gate-Source Voltage VGS ±20 Vdc Operating Junction Temperature TJ 200 °C Total Device Dissipation at PD 237 Watts 1.35 W/°C Above 25°C derate by Storage Temperature Range TSTG –40 to +150 °C Thermal Resistance (TCASE = 70°C) RqJC 0.74 °C/W Typical Performance 76 10 62 Output Pow er (W) 9 8 48 VDD = 28 V Efficiency (%) 34 IDQ = 650 mA 7 1750 1800 1850 1900 1950 20 2000 50 16 40 Gain - 30 5 VDD = 28V 12 IDQ = 650 mA -10 20 POUT = 60 W 8 10 -15 4 1800 Frequency (MHz) Return Loss (dB) 1820 1840 1860 Frequency (MHz) 2 0 -25 1880 Return Loss Gain (dB) 60 Efficiency (%) Gain (dB) Gain 11 90 Output Power & Efficiency 12 20 Efficiency Broadband Test Fixture Performance Typical POUT, Gain & Efficiency (at P-1dB) vs. Frequency e PTF 10153 Bias Voltage vs. Temperature Capacitance vs. Supply Voltage * 1.03 24 240 Voltage normalized to 1.0 V Series show current (A) VGS = 0 V f = 1 MHz 160 18 Cgs 120 12 Cds 80 Bias Voltage (V) 200 Crss Cds and Cgs (pF) 1.02 6 Crss 40 0 10 20 30 1.00 0.400 0.99 1.383 2.367 0.98 3.350 0.97 4.333 0.96 0 0 1.01 5.317 0.95 40 -20 Supply Voltage (Volts) 130 Power Gain vs. Output Power 14.0 100 IDQ = 650 Power Gain (dB) Output Power (Watts) 80 Temp. (°C) Output Power (@ 1 dB Compression) vs. Supply Voltage 80 60 IDQ = 650mA f =1880 MHz 40 13.5 IDQ = 550 13.0 IDQ = 450 VDD = 28 V f = 1880 MHz 12.5 12.0 20 24 26 28 30 32 34 1 36 Supply Voltage (Volts) 10 100 Output Power (Watts) Intermodulation Distortion vs. Output Power 2-Tone IMD vs. Output Power (as measured in a broadband circuit) (as measured in a broadband circuit) -20 0 -10 VDD = 28V, IDQ = 650 mA -20 f1 = 1880 MHz, f2 = 1879 MHz -30 3rd Order IMD (dBc) IMD (dBc) 30 -30 5th -40 -50 7th VDD = 28 V -40 IDQ = 650 mA -50 f1 = 1880 MHz f2 = 1879 MHz -60 -60 -70 -70 0 20 40 60 10 80 30 50 70 Output Power (Watts-PEP) Output Power (Watts-PEP) * This part is internally matched. Measurements of the finished product will not yield these results. 3 90 e PTF 10153 Impedance Data ARD G EN E R -3.40 2.12 1.20 1842 3.05 -3.86 1.97 1.31 1880 4.07 -4.04 1.88 1.31 1930 4.56 -5.10 1.59 1.68 1960 6.10 -5.90 1.46 1.74 1990 7.50 -6.75 1.48 1.61 2000 8.75 -7.40 1.53 1.64 1805 MHz 0.1 Z Source 2000 MHz 0 .2 .3 Test Circuit Block Diagram for f = 2 GHz D.U.T. l1 l2 l3 l4 l5 l6 l7 l8 l9 l10 PTF 10153 0.086 l 2 GHz 0.132 l 2 GHz 0.112 l 2 GHz 0.064 l 2 GHz 0.127 l 2 GHz 0.041 l 2 GHz 0.206 l 2 GHz 0.077 l 2 GHz 0.070 l 2 GHz 0.028 l 2 GHz NPN RF Transistor Microstrip 50 W Microstrip 50 W Microstrip 9.24 W Microstrip 78 W Microstrip 6.64 W Microstrip 9.24 W Microstrip 65 W Microstrip 21.87 W Microstrip 50 W Microstrip 50 W C1, C11 Capicitor, 10 µF ATC 100 B C2 Capicitor, 0.1 µF, 50 V Digi-Key PCC103BCT C3, C6, C4, C7 Capicitor, 10 pF ATC 100 B C5 Capicitor, 1.1 pF ATC 100 B C10 Capicitor, 0.30 pF ATC 100 B C12 Capicitor, 0.1 µF ATC 100 B R1, R2 Resistor, 220 W Digi-Key 2.2QBK R3 Resistor, 1.0 W Digi-Key, # P1OCT L1 Chip Inductor, 8 µH Coilcraft A03T L2 Chip Inductor, 2.7 µH N/A L3 Ferrite, 6 mm N/A PCB 0.050”, er = 6.0, 2 oz. Copper, TMM6, Rogers Corporation 4 0.4 2.27 0.3 1805 1805 MHz 0.2 jX 0.1 R 0.0 jX <--- R E LE WAV MHz Z Load 2000 MHz S NG TH Z Load W DTOW ARD L OA Z Source W 0.1 S - W AV ELE NG T H S T OW G Frequency Z0 = 50 W AT O Z Load 0 .2 Z Source R --> D VDD = 28 V, POUT = 60 W, IDQ = 650 mA e PTF 10153 Assembly Diagram (not to scale) Artwork (not to scale) Ericsson Inc. Microelectronics Morgan Hill, CA 95037 USA 1877-GOLDMOS (465-3667) United States +46 8 757 4700 International e-mail: [email protected] www.ericsson.com/rfpower 5 Specifications subject to change without notice. L3 © 1999, 2000 Ericsson Inc. EUS/KR 1522-PTF 10153 Uen Rev. B 11-06-00