PTF 10112 60 Watts, 1.8–2.0 GHz GOLDMOS™ Field Effect Transistor Description • The PTF 10112 is an internally matched common source N-channel enhancement-mode lateral MOSFET intended for CDMA and TDMA applications from 1.8 to 2.0 GHz. It is rated at 60 watts power output. Nitride surface passivation and full gold metallization ensure excellent device lifetime and reliability. • • • • • • INTERNALLY MATCHED Guaranteed Performance at 1.93, 1.99 GHz, 28 V - Output Power = 60 Watts Min - Power Gain = 12 dB Typ Full Gold Metallization Silicon Nitride Passivated Back Side Common Source Excellent Thermal Stability 100% Lot Traceability Typical Output Power vs. Input Power Output Power (Watts) 80 60 1011 3456 2 98 A-12 40 37 VCC = 28 V 20 IDQ = 580 mA f = 2000 MHz 0 0 1 2 3 4 5 6 Input Power (Watts) Package 20248 RF Specifications (100% Tested) Characteristic Gain (VDD = 28 V, POUT = 15 W, IDQ = 580 mA, f = 1.93, 1.99 GHz) Power Output at 1 dB Compression (VDD = 28 V, IDQ = 580 mA, f = 1.99 GHz) Drain Efficiency (VDD = 28 V, POUT = 60 W, IDQ = 580 mA, f = 1.99 GHz) Load Mismatch Tolerance (VDD = 28 V, POUT = 60 W, IDQ = 580 mA, f = 1.99 GHz —all phase angles at frequency of test) Symbol Min Typ Max Units Gps 11 12 — dB P-1dB 60 — — Watts hD — 41 — % Y — — 10:1 — All published data at TCASE = 25°C unless otherwise indicated. e 1 e PTF 10112 Electrical Characteristics (100% Tested) Characteristic Conditions Symbol Min Typ Max Units Drain-Source Breakdown Voltage VGS = 0 V, ID = 100 mA V(BR)DSS 65 — — Volts Zero Gate Voltage Drain Current VDS = 28 V, VGS = 0 V IDSS — — 5.0 mA Gate Threshold Voltage VDS = 10 V, ID = 150 mA VGS(th) 3.0 — 5.0 Volts Forward Transconductance VDS = 10 V, ID = 2 A gfs — 4.0 — Siemens Maximum Ratings Parameter Symbol Value Unit Drain-Source Voltage VDSS 65 Vdc Gate-Source Voltage VGS ±20 Vdc Operating Junction Temperature TJ 200 °C Total Device Dissipation at PD 237 Watts 1.35 W/°C Above 25°C derate by Storage Temperature Range TSTG –40 to +150 °C Thermal Resistance (TCASE = 70°C) RqJC 0.74 °C/W Output Power (W) Gain (dB) 13 12 70 Gain (dB) 60 11 10 50 VCC = 28 V IDQ = 580 mA 9 1750 1850 40 Efficiency (%) 1950 30 2050 60 50 Gain (dB) 12 40 VDD = 28 V 11 Efficiency (%) @P-1dB IDQ = 580mA 0 30 -10 20 POUT = 20 W 10 -20 10 Return Loss (dB) 9 1930 Frequency (MHz) 1940 1950 1960 1970 Frequency (MHz) 2 1980 -30 0 1990 Return Loss (dB) 80 Gain (dB) 14 Broadband Test Fixture Performance 13 Output Power & Efficiency Typical POUT, Gain & Efficiency (at P-1dB) vs. Frequency Efficiency (%) Typical Performance e PTF 10112 Intermodulation Distortion vs. Output Power Output Power vs. Supply Voltage (as measured in a broadband circuit) -15 VDD = 28 V -25 70 IMD (dBc) Output Power (Watts) 80 60 IDQ = 580 mA f = 2000 MHz 50 IM3 IDQ = 580 mA f1 = 1959 MHz -35 f2 = 1960 MHz IM5 -45 IM7 -55 -65 40 22 24 26 28 30 32 0 34 10 20 30 40 50 60 70 Output Power (Watts-PEP) Supply Voltage (Volts) Power Gain vs. Output Power Capacitance vs. Supply Voltage * 14 24 240 11 10 IDQ = 290 mA 9 8 VDD = 28 V f = 2000 MHz IDQ = 145 mA 7 200 VGS = 0 V f = 1 MHz 160 18 Cgs 120 12 Cds 80 6 40 Crss 0 0.1 1.0 10.0 Crss Cds and Cgs (pF) IDQ = 580 mA 12 100.0 0 0 10 Output Power (Watts) 20 30 40 Supply Voltage (Volts) * This part is internally matched. Measurements of the finished product will not yield these results. Bias Voltage vs. Temperature 1.03 Voltage normalized to 1.0 V Series show current (A) 1.02 Bias Voltage (V) Power Gain (dB) 13 1.01 1.00 0.400 0.99 1.383 2.367 0.98 3.350 0.97 4.333 0.96 5.317 0.95 -20 30 Temp. (°C) 3 80 130 e PTF 10112 Impedance Data VDD = 28 V, POUT = 60 W, IDQ = 580 mA D Z Source Z Load G S Z Source W Frequency Z Load W GHz R jX R jX 1.75 3.74 -4.50 1.48 0.25 1.80 3.80 -4.80 1.56 -0.20 1.85 3.96 -5.10 1.66 -0.50 1.90 4.90 -5.50 1.32 -0.80 1.95 7.90 -6.10 1.16 -0.60 2.00 9.00 -4.60 1.10 -0.45 2.05 10.00 -1.70 1.18 -0.30 4 Z0 = 50 W e PTF 10112 Test Circuit Test Circuit Block Diagram for f = 1.93–1.99 GHz Q1 l1, l6 l2 l3 l4 l5 C1, C2, C5, C8 C3, C7 C4, C6 PTF 10112 .10 l @ 2.0 GHz .08 l @ 2.0 GHz .162 l @ 2.0 GHz .22 l @ 2 GHz 10 pF Chip Cap 0.1 mF Chip Cap 10 mF SMT Tantalum LDMOS RF Transistor Microstrip 50 W Microstrip 9.4 W Microstrip 70 W Microstrip 5.8 W Microstrip 65 W ATC 100 B L1 L2 R1, R2 R3 R4 R5 Circuit Board 2.7 nh SMT Coil 4mm SMT Ferrite Bead 220 W Chip Resistor K1206 2K SMT Potentiometer 10 W Chip Resistor K1206 1W Chip Resistor K1206 .028" Dielectric Thickness, er = 4.0, AlliedSignal, G200, 2 oz. copper e 10112 Artwork (1 inch ) Parts Layout (not to scale) Ericsson Microelectronics RF Power Products Morgan Hill, CA 95037 USA 1-877-GOLDMOS (465-3667) United States +46 8 757 4700 International e-mail: [email protected] www.ericsson.com/rfpower 5 Specifications subject to change without notice. L3 © 1998 Ericsson Inc. EUS/KR 1301-PTF 10112 Uen Rev. A 01-08-2000 e Notes: 6