www.ti.com SLES127 − FEBRUARY 2005 TM FEATURES D 2×125 W at 10% THD+N Into 4-W BTL D 2×98 W at 10% THD+N Into 6-W BTL D 2×76 W at 10% THD+N Into 8-W BTL D 4×45 W at 10% THD+N Into 3-W SE D 4×35 W at 10% THD+N Into 4-W SE D 1×192 W at 10% THD+N Into 3-W PBTL D 1×240 W at 10% THD+N Into 2-W PBTL D >100 dB SNR (A-Weighted) D <0.1% THD+N at 1 W D Thermally Enhanced Package Option: − DKD (36-Pin PSOP3) D High-Efficiency Power Stage (>90%) With 140-mW Output MOSFETs D Power-On Reset for Protection on Power Up Without Any Power-Supply Sequencing D Integrated Self-Protection Circuits Including: − − − − Undervoltage Overtemperature Overload Short Circuit A low-cost, high-fidelity audio system can be built using a TI chipset, comprised of a modulator (e.g., TAS5508) and the TAS5152. This system only requires a simple passive LC demodulation filter to deliver high-quality, high-efficiency audio amplification with proven EMI compliance. This device requires two power supplies, 12 V for GVDD and VDD, and 35 V for PVDD. The TAS5152 does not require power-up sequencing due to internal power-on reset. The efficiency of this digital amplifier is greater than 90% into 6 Ω, which enables the use of smaller power supplies and heatsinks. The TAS5152 has an innovative protection system integrated on-chip, safeguarding the device against a wide range of fault conditions that could damage the system. These safeguards are short-circuit protection, overcurrent protection, undervoltage protection, and overtemperature protection. The TAS5152 has a new proprietary current-limiting circuit that reduces the possibility of device shutdown during high-level music transients. A new programmable overcurrent detector allows the use of lower-cost inductors in the demodulation output filter. BTL OUTPUT POWER vs SUPPLY VOLTAGE 130 D Error Reporting D EMI Compliant When Used With 110 Recommended System Design APPLICATIONS D Mini/Micro Audio System D DVD Receiver D Home Theater DESCRIPTION The TAS5152 is a third-generation, high-performance, integrated stereo digital amplifier power stage with improved protection system. The TAS5152 is capable of driving a 4-Ω bridge-tied load (BTL) at up to 125 W per channel with low integrated noise at the output, low THD+N performance, and low idle power dissipation. 100 PO − Output Power − W D Intelligent Gate Drive TC = 75°C THD+N @ 10% 120 4Ω 90 80 70 6Ω 60 50 40 30 8Ω 20 10 0 0 5 10 15 20 25 30 35 PVDD − Supply Voltage − V Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet. PurePath Digital and PowerPAD are trademarks of Texas Instruments. Other trademarks are the property of their respective owners. ! "#$ %!& % "! "! '! ! !( ! %% )*& % "!+ %! !!$* $%! !+ $$ "!!& Copyright 2005, Texas Instruments Incorporated www.ti.com SLES127 − FEBRUARY 2005 These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates. GENERAL INFORMATION The TAS5152 is available in a 36-pin PSOP3 (DKD) thermally enhanced package. The package contains a heat slug that is located on the top side of the device for convenient thermal coupling to the heatsink. DKD PACKAGE (TOP VIEW) GVDD_B OTW SD PWM_A RESET_AB PWM_B OC_ADJ GND AGND VREG M3 M2 M1 PWM_C RESET_CD PWM_D VDD GVDD_C 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 36 35 34 33 32 31 30 29 28 27 26 25 24 23 22 21 20 19 GVDD_A BST_A PVDD_A OUT_A GND_A GND_B OUT_B PVDD_B BST_B BST_C PVDD_C OUT_C GND_C GND_D OUT_D PVDD_D BST_D GVDD_D MODE Selection Pins MODE PINS M3 M2 M1 0 0 0 0 0 1 0 1 0 0 1 1 1 0 0 1 0 1 1 1 0 PWM INPUT OUTPUT CONFIGURATION PROTECTION SCHEME 2N (1) AD/BD modulation 2 channels BTL output BTL mode (2) Reserved 1N (1) AD modulation 2 channels BTL output BTL mode (2) 1N (1) AD modulation 1 channel PBTL output PBTL mode. Only PWM_A input is used. 4 channels SE output Protection works similarly to BTL mode (2). Only difference in SE mode is that OUT_x is Hi-Z instead of a pulldown through internal pulldown resistor. 1N (1) AD modulation Reserved 1 1 1 (1) The 1N and 2N naming convention is used to indicate the required number of PWM lines to the power stage per channel in a specific mode. (2) An overload protection (OLP) occurring on A or B causes both channels to shut down. An OLP on C or D works similarly. Global errors like overtemperature error (OTE), undervoltage protection (UVP) and power-on reset (POR) affect all channels. Package Heat Dissipation Ratings (1) PARAMETER TAS5152DKD RθJC (°C/W)—2 BTL or 4 SE channels (8 transistors) 1.28 RθJC 〈°C/W)—1 BTL or 2 SE channel(s) (4 transistors) 2.56 RθJC (°C/W)—(1 transistor) Pad area (2) 8.6 80 mm2 (1) JC is junction-to-case, CH is case-to-heatsink. (2) RθCH is an important consideration. Assume a 2-mil thickness of typical thermal grease between the pad area and the heatsink. The RθCH with this condition is 0.8°C/W for the DKD package and 1.8°C/W for the DDV package. 2 www.ti.com SLES127 − FEBRUARY 2005 Absolute Maximum Ratings Ordering Information over operating free-air temperature range unless otherwise noted(1) TAS5152 VDD to AGND –0.3 V to 13.2 V GVDD_X to AGND –0.3 V to 13.2 V PVDD_X to GND_X (2) OUT_X to GND_X (2) –0.3 V to 50 V –0.3 V to 63.2 V VREG to AGND –0.3 V to 4.2 V GND_X to GND –0.3 V to 0.3 V GND_X to AGND –0.3 V to 0.3 V GND to AGND –0.3 V to 0.3 V PWM_X, OC_ADJ, M1, M2, M3 to AGND –0.3 V to 4.2 V Maximum continuous sink current (SD, OTW) Maximum operating junction temperature range, TJ Storage temperature PACKAGE DESCRIPTION TAS5152DKD 36-pin PSOP3 For the most current specification and package information, see the TI Web site at www.ti.com. –0.3 V to 50 V BST_X to GND_X (2) RESET_X, SD, OTW to AGND TA 0°C to 70°C –0.3 V to 7 V 9 mA 0°C to 125°C –40_C to 125_C Lead temperature, 1,6 mm (1/16 inch) from case for 10 seconds 260_C Minimum pulse width low 50 ns (1) Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not implied. Exposure to absolutemaximum-rated conditions for extended periods may affect device reliability. (2) These voltages represent the dc voltage + peak ac waveform measured at the terminal of the device in all conditions. 3 www.ti.com SLES127 − FEBRUARY 2005 Terminal Functions TERMINAL NAME NO. FUNCTION (1) FUNCTION AGND 9 P Analog ground BST_A 35 P HS bootstrap supply (BST), external capacitor to OUT_A required BST_B 28 P HS bootstrap supply (BST), external capacitor to OUT_B required BST_C 27 P HS bootstrap supply (BST), external capacitor to OUT_C required BST_D 20 P HS bootstrap supply (BST), external capacitor to OUT_D required GND 8 P Ground GND_A 32 P Power ground for half-bridge A GND_B 31 P Power ground for half-bridge B GND_C 24 P Power ground for half-bridge C GND_D 23 P Power ground for half-bridge D GVDD_A 36 P Gate-drive voltage supply requires 0.1-µF capacitor to AGND GVDD_B 1 P Gate-drive voltage supply requires 0.1-µF capacitor to AGND GVDD_C 18 P Gate-drive voltage supply requires 0.1-µF capacitor to AGND GVDD_D 19 P Gate-drive voltage supply requires 0.1-µF capacitor to AGND M1 13 I Mode selection pin M2 12 I Mode selection pin M3 11 I Mode selection pin OC_ADJ 7 O Analog overcurrent programming pin requires resistor to ground OTW 2 O Overtemperature warning signal, open drain, active-low OUT_A 33 O Output, half-bridge A OUT_B 30 O Output, half-bridge B OUT_C 25 O Output, half-bridge C OUT_D 22 O Output, half-bridge D PVDD_A 34 P Power supply input for half-bridge A requires close decoupling of 0.1-µF capacitor to GND_A PVDD_B 29 P Power supply input for half-bridge B requires close decoupling of 0.1-µF capacitor to GND_B PVDD_C 26 P Power supply input for half-bridge C requires close decoupling of 0.1-µF capacitor to GND_C PVDD_D 21 P Power supply input for half-bridge D requires close decoupling of 0.1-µF capacitor to GND_D PWM_A 4 I Input signal for half-bridge A PWM_B 6 I Input signal for half-bridge B PWM_C 14 I Input signal for half-bridge C PWM_D 16 I Input signal for half-bridge D RESET_AB 5 I Reset signal for half-bridge A and half-bridge B, active-low RESET_CD 15 I Reset signal for half-bridge C and half-bridge D, active-low SD 3 O Shutdown signal, open drain, active-low VDD 17 P Power supply for digital voltage regulator requires 0.1-µF capacitor to GND. P Digital regulator supply filter pin requires 0.1-µF capacitor to AGND VREG 10 (1) I = input, O = Output, P = Power 4 DESCRIPTION www.ti.com SLES127 − FEBRUARY 2005 SYSTEM BLOCK DIAGRAM OTW System Microcontroller SD TAS5508 OTW SD BST_A BST_B RESET_AB RESET_CD VALID PWM_A LeftChannel Output OUT_A Output H-Bridge 1 Input H-Bridge 1 PWM_B OUT_B Bootstrap Capacitors 2nd-Order L-C Output Filter for Each Half-Bridge 2-Channel H-Bridge BTL Mode OUT_C PWM_C 4 35 V PVDD System Power Supply GND 12 V 4 PVDD Power Supply Decoupling OC_ADJ AGND VREG M3 OUT_D 2nd-Order L-C Output Filter for Each Half-Bridge BST_C VDD M2 GND PVDD_A, B, C, D M1 GVDD_A, B, C, D Input H-Bridge 2 PWM_D Hardwire Mode Control Output H-Bridge 2 GND_A, B, C, D RightChannel Output BST_D Bootstrap Capacitors 4 GVDD VDD VREG Power Supply Decoupling Hardwire OC Limit GND GVDD (12 V)/VDD (12 V) VAC 5 www.ti.com SLES127 − FEBRUARY 2005 FUNCTIONAL BLOCK DIAGRAM VDD Undervoltage Protection OTW Internal Pullup Resistors to VREG SD M1 Protection and I/O Logic M2 M3 4 VREG VREG Power On Reset AGND Temp. Sense GND RESET_AB Overload Protection RESET_CD Isense OC_ADJ GVDD_D BST_D PVDD_D PWM_D PWM Rcv. Ctrl. Timing Gate Drive OUT_D BTL/PBTL−Configuration Pulldown Resistor GND_D GVDD_C BST_C PVDD_C PWM_C PWM Rcv. Ctrl. Timing Gate Drive OUT_C BTL/PBTL−Configuration Pulldown Resistor GND_C GVDD_B BST_B PVDD_B PWM_B PWM Rcv. Ctrl. Timing Gate Drive OUT_B BTL/PBTL−Configuration Pulldown Resistor GND_B GVDD_A BST_A PVDD_A PWM_A PWM Rcv. Ctrl. Timing Gate Drive OUT_A BTL/PBTL−Configuration Pulldown Resistor GND_A 6 www.ti.com SLES127 − FEBRUARY 2005 RECOMMENDED OPERATING CONDITIONS CONDITIONS MIN NOM MAX UNIT PVDD_x Half-bridge supply DC supply voltage 0 35 37 V GVDD_x Supply for logic regulators and gate-drive circuitry DC supply voltage 10.8 12 13.2 V VDD Digital regulator input DC supply voltage 10.8 12 13.2 V RL (BTL) RL (SE) Output filter: L = 10 µH, C = 470 nF Output AD modulation, switching frequency > 350 kHz 3 4 Load impedance 2 3 RL (PBTL) LOutput (BTL) 2 10 LOutput (SE) Output-filter inductance Output-filter LOutput (PBTL) FPWM TJ 1.5 Ω Minimum output inductance under short-circuit condition µH 10 10 PWM frame rate 192 Junction temperature 384 0 432 kHz 125 _C AUDIO SPECIFICATIONS (BTL) PVDD_X = 35 V, GVDD = VDD = 12 V, BTL mode, RL = 4 Ω, audio frequency = 1 kHz, AES17 filter, FPWM = 384 kHz, case temperature = 75°C, unless otherwise noted. Audio performance is recorded as a chipset, using TAS5508 PWM processor with an effective modulation index limit of 96.1%. All performance is in accordance with recommended operating conditions unless otherwise specified. TAS5152 SYMBOL Po PARAMETER Power output per channel THD+N Total harmonic distortion + noise Vn SNR Output integrated noise Signal-to-noise ratio (1) DNR Dynamic range CONDITIONS MIN TYP MAX UNIT RL = 4 Ω,10% THD, clipped input signal 125 RL = 6 Ω,10% THD, clipped input signal 98 RL = 8 Ω,10% THD, clipped input signal 76 RL = 4 Ω, 0 dBFS, unclipped input signal 96 RL = 6 Ω, 0 dBFS, unclipped input signal 72 RL = 8 Ω, 0 dBFS, unclipped input signal 57 0 dBFS 0.3 1W 0.1 A-weighted 145 µV A-weighted 102 dB A-weighted, input level = –60 dBFS using TAS5508 modulator 102 dB A-weighted, input level = –60 dBFS using TAS5518 modulator 110 dB 2 W Pidle Power dissipation due to idle losses (IPVDDx) PO = 0 W, 2 channels switching (2) (1) SNR is calculated relative to 0-dBFS input level. (2) Actual system idle losses are affected by core losses of output inductors. W % 7 www.ti.com SLES127 − FEBRUARY 2005 AUDIO SPECIFICATIONS (Single-Ended Output) PVDD_X = 35 V, GVDD = VDD = 12 V, SE mode, RL = 4 Ω, audio frequency = 1 kHz, AES17 filter, FPWM = 384 kHz, case temperature = 75°C, unless otherwise noted. Audio performance is recorded as a chipset, using TAS5086 PWM processor with an effective modulation index limit of 96.1%. All performance is in accordance with recommended operating conditions unless otherwise specified. TAS5152 SYMBOL Po PARAMETER Power output per channel THD+N Total harmonic distortion + noise Vn SNR Output integrated noise Signal-to-noise ratio (1) DNR CONDITIONS MIN RL = 3 Ω,10% THD, clipped input signal 45 RL = 4 Ω,10% THD, clipped input signal 35 RL = 3 Ω, 0 dBFS, unclipped input signal 35 RL = 4 Ω, 0 dBFS, unclipped input signal 25 0 dBFS 0.2 1W 0.1 MAX UNIT W % A-weighted 90 µV A-weighted 100 dB 100 dB 2 W A-weighted, input level = –60 dBFS using TAS5508 modulator PO = 0 W, 4 channels switching (2) Dynamic range TYP Pidle Power dissipation due to idle losses (IPVDDx) (1) SNR is calculated relative to 0-dBFS input level. (2) Actual system idle losses are affected by core losses of output inductors. AUDIO SPECIFICATIONS (PBTL) PVDD_X = 35 V, GVDD = VDD = 12 V, PBTL mode, RL = 3 Ω, audio frequency = 1 kHz, AES17 filter, FPWM = 384 kHz, case temperature = 75°C, unless otherwise noted. Audio performance is recorded as a chipset, using TAS5508 PWM processor with an effective modulation index limit of 96.1%. All performance is in accordance with recommended operating conditions unless otherwise specified. TAS5152 SYMBOL Po PARAMETER Power output per channel THD+N Total harmonic distortion + noise Vn SNR Output integrated noise Signal-to-noise ratio (1) DNR Dynamic range CONDITIONS TYP MAX UNIT RL = 3 Ω,10% THD, clipped input signal 192 RL = 2 Ω,10% THD, clipped input signal 240 RL = 3 Ω, 0 dBFS, unclipped input signal 145 RL = 2 Ω, 0 dBFS, unclipped input signal 190 0 dBFS 0.2 1W 0.1 A-weighted 160 µV A-weighted 102 dB A-weighted, input level = –60 dBFS using TAS5508 modulator 102 dB A-weighted, input level = –60 dBFS using TAS5518 modulator 110 dB 2 W Pidle Power dissipation due to idle losses (IPVDDx) PO = 0 W, 1 channel switching (2) (1) SNR is calculated relative to 0-dBFS input level. (2) Actual system idle losses are affected by core losses of output inductors. 8 MIN W % www.ti.com SLES127 − FEBRUARY 2005 ELECTRICAL CHARACTERISTICS RL= 4 Ω. FPWM = 384 kHz, unless otherwise noted. All performance is in accordance with recommended operating conditions unless otherwise specified. SYMBOL PARAMETER CONDITIONS TAS5152 MIN TYP MAX UNITS 3 V Internal Voltage Regulator and Current Consumption VREG Voltage regulator, only used as a reference node IVDD VDD supply current IGVDD_x Gate supply current per half-bridge IPVDD_x Half-bridge idle current VDD = 12 V 3.3 3.6 Operating, 50% duty cycle 7 17 Idle, reset mode 6 11 50% duty cycle mA 5 16 Reset mode 0.3 1 50% duty cycle, without output filter or load 15 25 mA Reset mode, no switching 7 25 µA mA Output Stage MOSFETs RDSon,LS Drain-to-source resistance, LS TJ= 25°C, includes metallization resistance, GVDD = 12 V 140 155 mΩ RDSon,HS Drain-to-source resistance, HS TJ= 25°C, includes metallization resistance, GVDD = 12 V 140 155 mΩ 9 www.ti.com SLES127 − FEBRUARY 2005 ELECTRICAL CHARACTERISTICS (continued) RL= 4 Ω. FPWM = 384 kHz, unless otherwise noted. All performance is in accordance with recommended operating conditions unless otherwise specified. SYMBOL PARAMETER CONDITIONS TAS5152 MIN TYP MAX UNITS I/O Protection Vuvp,G Undervoltage protection limit, GVDD_x Vuvp,hyst(1) Undervoltage protection hysteresis OTW(1) Overtemperature warning 115 Temperature drop needed below OTW temp. for OTWHYST(1) OTW to be inactive after the OTW event OTE(1) 9.8 V 250 mV 125 135 _C 25 Overtemperature error 145 155 _C 165 _C OTE-OTW OTE-OTW differential differential(1) 30 _C Temperature drop needed below OTE temp. for OTEHYST(1) SD to be released following an OTE event 25 _C 1.25 ms OLPC Overload protection counter IOC Overcurrent limit protection IOCT ROCP Overcurrent response time RPD Fpwm = 384 kHz Resistor-programmable, high end, ROCP = 15 kΩ 8.5 10.8 11.8 A 69 kΩ 210 OC programming resistor range Resistor tolerance = 5% Internal pulldown resistor at the output of each half-bridge Connected when RESET is active to provide bootstrap capacitor charge. Not used in SE mode 15 ns 2.5 kΩ Static Digital Specifications VIH High-level input voltage VIL Low-level input voltage Leakage Input leakage current PWM_A, PWM_B, PWM_C, PWM_D, M1, M2, M3, RESET_AB, RESET_CD 2 V –10 0.8 V 10 µA kΩ OTW/SHUTDOWN (SD) RINT_PU Internal pullup resistance, OTW to VREG, SD to VREG VOH High-level output voltage Internal pullup resistor VOL Low-level output voltage FANOUT Device fanout OTW , SD (1) Specified by design 10 External pullup of 4.7 kΩ to 5V IO = 4 mA No external pullup 20 26 32 3 3.3 3.6 4.5 5 0.2 30 0.4 V V Devices www.ti.com SLES127 − FEBRUARY 2005 TYPICAL CHARACTERISTICS, BTL CONFIGURATION TOTAL HARMONIC DISTORTION + NOISE vs OUTPUT POWER OUTPUT POWER vs SUPPLY VOLTAGE 10 TC = 75°C THD+N @ 10% 120 110 100 PO − Output Power − W THD+N − Total Harmonic Distortion + Noise − % 130 TC = 75°C PVDD = 35 V One Channel 1 4Ω 6Ω 0.1 4Ω 90 80 70 6Ω 60 50 40 30 8Ω 8Ω 20 10 0.01 0 1 10 0 100 5 10 15 20 25 PO − Output Power − W PVDD − Supply Voltage − V Figure 1 Figure 2 UNCLIPPED OUTPUT POWER vs SUPPLY VOLTAGE SYSTEM EFFICIENCY vs OUTPUT POWER 130 30 35 100 120 TC = 75°C 90 110 80 8Ω 70 90 80 Efficiency − % PO − Output Power − W 100 4Ω 70 60 50 6Ω 40 6Ω 4Ω 60 50 40 30 30 20 20 8Ω 10 TC = 25°C Two Channels 10 0 0 0 5 10 15 20 25 30 35 0 25 50 75 100 125 150 175 200 225 250 PVDD − Supply Voltage − V PO − Output Power − W Figure 3 Figure 4 11 www.ti.com SLES127 − FEBRUARY 2005 SYSTEM POWER LOSS vs OUTPUT POWER SYSTEM OUTPUT POWER vs CASE TEMPERATURE 50 150 TC = 25°C 45 130 40 120 PO − Output Power − W 4Ω 35 Power Loss − W 4Ω 140 30 6Ω 25 20 15 10 6Ω 110 100 90 80 70 60 8Ω 50 40 30 20 8Ω 5 THD+N @10% 10 0 0 0 25 50 75 100 125 150 175 200 225 250 10 20 30 40 60 70 80 90 100 110 120 TC − Case Temperature − °C Figure 5 Figure 6 NOISE AMPLITUDE vs FREQUENCY 0 TC = 75°C –60 dB 1 kHz −10 −20 Noise Amplitude − dBr −30 −40 −50 −60 −70 −80 −90 −100 −110 −120 −130 −140 −150 0 2 4 6 8 10 12 14 f − Frequency − kHz Figure 7 12 50 PO − Output Power − W 16 18 20 22 www.ti.com SLES127 − FEBRUARY 2005 TYPICAL CHARACTERISTICS, SE CONFIGURATION TOTAL HARMONIC DISTORTION + NOISE vs OUTPUT POWER OUTPUT POWER vs SUPPLY VOLTAGE TC = 75°C THD+N @ 10% 45 40 PO − Output Power − W 10 1 3Ω 0.1 35 30 3Ω 25 20 15 4Ω 4Ω 10 5 0.01 0 1 10 0 50 5 10 15 20 25 PO − Output Power − W PVDD − Supply Voltage − V Figure 8 Figure 9 30 35 OUTPUT POWER vs CASE TEMPERATURE 60 3Ω 55 50 PO − Output Power − W THD+N − Total Harmonic Distortion + Noise − % 50 TC = 75°C PVDD = 35 V One Channel 45 40 35 30 4Ω 25 20 15 10 5 THD+N@ 10% 0 10 20 30 40 50 60 70 80 90 100 110 120 TC − Case Temperature − °C Figure 10 13 www.ti.com SLES127 − FEBRUARY 2005 TYPICAL CHARACTERISTICS, PBTL CONFIGURATION TOTAL HARMONIC DISTORTION + NOISE vs OUTPUT POWER OUTPUT POWER vs SUPPLY VOLTAGE 10 TC = 75°C THD+N @ 10% 240 220 200 PO − Output Power − W THD+N − Total Harmonic Distortion + Noise − % 260 TC = 75°C PVDD = 35 V One Channel 1 2Ω 0.1 180 160 2Ω 140 120 100 80 60 3Ω 3Ω 40 20 0.01 0 1 10 100 0 300 5 10 20 25 PVDD − Supply Voltage − V Figure 11 Figure 12 SYSTEM OUTPUT POWER vs CASE TEMPERATURE 300 THD+N @ 10% 280 2Ω PO − Output Power − W 260 240 3Ω 220 200 180 160 140 120 100 10 20 30 40 50 60 70 80 90 100 110 120 TC − Case Temperature − °C Figure 13 14 15 PO − Output Power − W 30 35 www.ti.com SLES127 − FEBRUARY 2005 PVDD 10 Ω GVDD 10 µF 3.3 Ω 100 nF 47 µF 50 V 10 Ω 1000 µF 50 V 10 nF 50 V 10 nF 50 V TAS5152DKD 100 nF 1 Microcontroller 2 0Ω Optional 3 BKND_ERR GVDD_B GVDD_A 35 OTW SD 5 VALID 22 kΩ PWM_P_2 7 OUT_A RESET_AB GND_A PWM_B GND_B OC_ADJ OUT_B 12 13 14 28 AGND BST_B VREG BST_C 26 M3 PVDD_C M2 OUT_C M1 GND_C PWM_C GND_D RESET_CD OUT_D 10 Ω 47 µF 50 V 47 µF 50 V 100 nF 50 V 3.3 Ω 470 nF 100 V 23 10 µH@10 A PVDD_D 17 100 nF 50 V 20 BST_D 19 18 GVDD_C 10 nF 50 V 10 µH@10 A 24 21 PWM_D 100 nF 100 nF 50 V 22 VDD 10 µF 33 nF 100 nF 50 V 25 16 GVDD 33 nF 27 15 1Ω 10 nF 50 V 29 PVDD_B 10 100 nF 11 3.3 Ω 30 9 TAS5508 100 nF 50 V 31 GND 470 nF 100 V 10 µH@10 A 32 3.3 Ω 10 µH@10 A 33 PWM_A 8 PWM_M_2 100 nF 50 V 34 PVDD_A 6 PWM_M_1 33 nF BST_A 4 PWM_P_1 100 nF 50 V 36 47 µF 50 V 100 nF 50 V 3.3 Ω 10 nF 50 V 33 nF GVDD_D PVDD 100 nF 100 nF 10 Ω 3.3 Ω 10 nF 50 V 1000 µF 50 V Figure 14. Typical Differential (2N) BTL Application With AD Modulation Filters 15 www.ti.com SLES127 − FEBRUARY 2005 PVDD 10 Ω GVDD 10 µF 3.3 Ω 100 nF 47 µF 50 V 10 Ω 1000 µF 50 V 10 nF 50 V 10 nF 50 V TAS5152DKD 100 nF 1 Microcontroller 2 0Ω Optional 3 BKND_ERR GVDD_B GVDD_A 35 OTW SD 5 VALID 7 OUT_A RESET_AB GND_A PWM_B GND_B OC_ADJ OUT_B 11 12 13 14 28 AGND BST_B VREG BST_C 26 M3 PVDD_C M2 OUT_C M1 GND_C PWM_C GND_D RESET_CD OUT_D 10 Ω 100 nF 47 µF 50 V 47 µF 50 V 3.3 Ω 470 nF 100 V 10 µH@10 A PVDD_D 100 nF 50 V 20 BST_D 19 18 GVDD_C 100 nF 50 V 23 21 PWM_D 10 nF 50 V 10 µH@10 A 22 VDD 10 µF 100 nF 50 V 24 17 GVDD 33 nF 100 nF 50 V 25 16 No connect 33 nF 27 15 1Ω 10 nF 50 V 29 PVDD_B 10 TAS5508 3.3 Ω 30 9 100 nF 100 nF 50 V 31 GND 470 nF 100 V 10 µH@10 A 32 3.3 Ω 10 µH@10 A 33 PWM_A 8 PWM_P_2 100 nF 50 V 34 PVDD_A 6 No connect 22 kΩ 33 nF BST_A 4 PWM_P_1 100 nF 50 V 36 47 µF 50 V 50 nF 100 V 3.3 Ω 10 nF 50 V 33 nF GVDD_D PVDD 100 nF 100 nF 10 Ω 3.3 Ω 10 nF 50 V 1000 µF 50 V Figure 15. Typical Non-Differential (1N) BTL Application With AD Modulation Filters 16 www.ti.com SLES127 − FEBRUARY 2005 10 Ω 100 nF GVDD 10 µF PVDD 47 µF 50 V 10 Ω 3.3 Ω TAS5152DKD 100 nF 1 Microcontroller 2 0Ω Optional 3 BKND_ERR GVDD_B GVDD_A 35 OTW 5 VALID SD PVDD_A 39 kΩ PWM_P_3 7 33 PWM_A OUT_A RESET_AB GND_A PWM_B GND_B OC_ADJ OUT_B 30 29 PVDD_B 9 TAS5508 12 13 14 BST_B VREG BST_C 27 M3 PVDD_C M2 OUT_C M1 GND_C PWM_C GND_D RESET_CD OUT_D 47 µF 50 V 23 10 µH@10 A D 21 PWM_D PVDD_D 100 nF 50 V 20 BST_D GVDD_D PVDD 100 nF 100 nF 3.3 Ω 100 nF 100 V PVDD 220 µF 50 V 1 µF 50 V 100 nF 100 V 10 nF 50 V 100 nF 100 V 3.3 Ω C 10 nF @ 50 V 2.7 kΩ PVDD 3.3 Ω PVDD/2 220 µF 50 V 1 µF 50 V 100 nF 100 V 10 nF 50 V 3.3 Ω 10 nF @ 50 V 3.3 Ω PVDD/2 220 µF 50 V 220 µF 50 V 100 nF 100 V B 2.7 kΩ PVDD 1000 µF 50 V 10 nF 50 V 10 Ω 2.7 kΩ 47 µF 50 V 33 nF 19 18 GVDD_C 10 Ω A C 10 µH@10 A 22 VDD 10 µF 47 µF 50 V 100 nF 50 V 24 17 100 nF 100 nF 50 V 25 16 1Ω 33 nF 26 15 GVDD 33 nF 28 AGND 10 11 B 31 GND 100 nF 10 µH@10 A 32 8 PWM_P_4 A 10 µH@10 A 100 nF 50 V 34 6 PWM_P_2 33 nF BST_A 4 PWM_P_1 1000 µF 50 V 10 nF 50 V 36 220 µF 50 V PVDD/2 1 µF 50 V 100 nF 100 V 10 nF 50 V 100 nF 100 V 3.3 Ω D 10 nF @ 50 V 2.7 kΩ PVDD 3.3 Ω 220 µF 50 V 1 µF 50 V 100 nF 100 V 10 nF 50 V 3.3 Ω 10 nF @ 50 V 3.3 Ω PVDD/2 220 µF 50 V 220 µF 50 V Figure 16. Typical SE Application 17 www.ti.com SLES127 − FEBRUARY 2005 PVDD 10 Ω GVDD 10 µF 3.3 Ω 100 nF 47 µF 50 V 10 Ω 1000 µF 50 V 10 nF 50 V 10 nF 50 V TAS5152DKD 100 nF 1 Microcontroller 2 0Ω Optional 3 BKND_ERR GVDD_B GVDD_A 35 OTW SD 5 VALID 30 kΩ 7 OUT_A RESET_AB GND_A PWM_B GND_B OC_ADJ OUT_B TAS5508 13 14 28 AGND BST_B VREG BST_C 26 M3 PVDD_C M2 OUT_C M1 GND_C PWM_C GND_D RESET_CD OUT_D 10 Ω 47 µF 50 V 47 µF 50 V 10 µH@10 A 23 10 µH@10 A 22 21 PVDD_D 100 nF 50 V 20 VDD 100 nF 100 nF 50 V 24 17 10 µF 33 nF 100 nF 50 V 25 16 GVDD 33 nF 27 PWM_D BST_D 19 18 GVDD_C 47 µF 50 V 33 nF GVDD_D PVDD 100 nF 100 nF 10 Ω 3.3 Ω 10 nF 50 V 1000 µF 50 V Figure 17. Typical Differential (2N) PBTL Application With AD Modulation Filters 18 3.3 Ω 10 nF 50 V 29 PVDD_B 15 1Ω 100 nF 100 V 30 10 12 470 nF 63 V 31 9 11 10 µH@10 A 10 µH@10 A 32 GND 3.3 Ω 33 PWM_A 8 100 nF 100 nF 50 V 34 PVDD_A 6 PWM_M_1 33 nF BST_A 4 PWM_P_1 100 nF 100 V 36 www.ti.com SLES127 − FEBRUARY 2005 PVDD 10 Ω GVDD 10 µF 3.3 Ω 100 nF 47 µF 50 V 10 Ω 1000 µF 50 V 10 nF 50 V TAS5152DKD 100 nF 1 Microcontroller 2 0Ω Optional 3 BKND_ERR GVDD_B GVDD_A 35 OTW SD 5 VALID 7 OUT_A RESET_AB GND_A PWM_B GND_B OC_ADJ OUT_B 13 14 No connect 28 AGND BST_B VREG BST_C 26 M2 OUT_C M1 GND_C PWM_C GND_D RESET_CD OUT_D 10 Ω 100 nF 47 µF 50 V 100 nF 100 V 3.3 Ω 10 nF 50 V 10 µH@10 A 24 23 10 µH@10 A 22 21 PWM_D PVDD_D 100 nF 50 V 20 VDD 10 µF 100 nF 50 V 470 nF 63 V 47 µF 50 V 25 17 GVDD 33 nF 100 nF 50 V PVDD_C 16 No connect 33 nF 27 M3 3.3 Ω 29 PVDD_B 15 1Ω 100 nF 100 V 30 10 12 10 nF 50 V 31 GND TAS5508 10 µH@10 A 32 9 11 10 µH@10 A 33 PWM_A 8 100 nF 100 nF 50 V 34 PVDD_A 6 No connect 30 kΩ 33 nF BST_A 4 PWM_P_1 36 BST_D 19 18 GVDD_C 47 µF 50 V 33 nF GVDD_D PVDD 100 nF 100 nF 10 Ω 3.3 Ω 10 nF 50 V 1000 µF 50 V Figure 18. Typical Non-Differential (1N) PBTL Application 19 www.ti.com SLES127 − FEBRUARY 2005 THEORY OF OPERATION POWER SUPPLIES To facilitate system design, the TAS5152 needs only a 12-V supply in addition to the (typically) 35-V power-stage supply. An internal voltage regulator provides suitable voltage levels for the digital and low-voltage analog circuitry. Additionally, all circuitry requiring a floating voltage supply, e.g., the high-side gate drive, is accommodated by built-in bootstrap circuitry requiring only a few external capacitors. In order to provide outstanding electrical and acoustical characteristics, the PWM signal path including gate drive and output stage is designed as identical, independent half-bridges. For this reason, each half-bridge has separate gate drive supply (GVDD_X), bootstrap pins (BST_X), and power-stage supply pins (PVDD_X). Furthermore, an additional pin (VDD) is provided as supply for all common circuits. Although supplied from the same 12-V source, it is highly recommended to separate GVDD_A, GVDD_B, GVDD_C, GVDD_D, and VDD on the printed-circuit board (PCB) by RC filters (see application diagram for details). These RC filters provide the recommended high-frequency isolation. Special attention should be paid to placing all decoupling capacitors as close to their associated pins as possible. In general, inductance between the power supply pins and decoupling capacitors must be avoided. (See reference board documentation for additional information.) For a properly functioning bootstrap circuit, a small ceramic capacitor must be connected from each bootstrap pin (BST_X) to the power-stage output pin (OUT_X). When the power−stage output is low, the bootstrap capacitor is charged through an internal diode connected between the gate-drive power-supply pin (GVDD_X) and the bootstrap pin. When the power-stage output is high, the bootstrap capacitor potential is shifted above the output potential and thus provides a suitable voltage supply for the high-side gate driver. In an application with PWM switching frequencies in the range 352 kHz to 384 kHz, it is recommended to use 33-nF ceramic capacitors, size 0603 or 0805, for the bootstrap supply. These 33-nF capacitors ensure sufficient energy storage, even during minimal PWM duty cycles, to keep the high-side power stage FET (LDMOS) fully turned on during the remaining part of the PWM cycle. In an application running at a reduced switching frequency, generally 192 kHz, the bootstrap capacitor might need to be increased in value. Special attention should be paid to the power-stage power supply; this includes component selection, PCB placement and routing. As indicated, each half-bridge has independent power-stage supply pins (PVDD_X). For optimal electrical performance, EMI compliance, and 20 system reliability it is important that each PVDD_X pin is decoupled with a 100-nF ceramic capacitor placed as close as possible to each supply pin. It is recommended to follow the PCB layout of the TAS5152 reference design. For additional information on recommended power supply and required components, see the application diagrams given previously in this data sheet. The 12-V supply should be from a low-noise, low-output-impedance voltage regulator. Likewise, the 35-V power-stage supply is assumed to have low output impedance and low noise. The power-supply sequence is not critical as facilitated by the internal power-on-reset circuit. Moreover, the TAS5152 is fully protected against erroneous power-stage turnon due to parasitic gate charging. Thus, voltage-supply ramp rates (dV/dt) are non-critical within the specified range (see the Recommended Operating Conditions section of this data sheet). SYSTEM POWER-UP/POWER-DOWN SEQUENCE Powering Up The TAS5152 does not require a power-up sequence. The outputs of the H−bridges remain in a high-impedance state until the gate-drive supply voltage (GVDD_X) and VDD voltage are above the undervoltage protection (UVP) voltage threshold (see the Electrical Characteristics section of this data sheet). Although not specifically required, it is recommended to hold RESET_AB and RESET_CD in a low state while powering up the device. This allows an internal circuit to charge the external bootstrap capacitors by enabling a weak pulldown of the half-bridge output. When the TAS5152 is being used with TI PWM modulators such as the TAS5508, no special attention to the state of RESET_AB and RESET_CD is required, provided that the chipset is configured as recommended. Powering Down The TAS5152 does not require a power-down sequence. The device remains fully operational as long as the gate-drive supply (GVDD_X) voltage and VDD voltage are above the undervoltage protection (UVP) voltage threshold (see the Electrical Characteristics section of this data sheet). Although not specifically required, it is a good practice to hold RESET_AB and RESET_CD low during power down, thus preventing audible artifacts including pops or clicks. When the TAS5152 is being used with TI PWM modulators such as the TAS5508, no special attention to the state of RESET_AB and RESET_CD is required, provided that the chipset is configured as recommended. www.ti.com SLES127 − FEBRUARY 2005 Use of TAS5152 in High-Modulation-Index Capable Systems ERROR REPORTING The SD and OTW pins are both active-low, open-drain outputs. Their function is for protection-mode signaling to a PWM controller or other system-control device. Any fault resulting in device shutdown is signaled by the SD pin going low. Likewise, OTW goes low when the device junction temperature exceeds 125°C (see the following table). SD OTW DESCRIPTION 0 0 Overtemperature (OTE) or overload (OLP) or undervoltage (UVP) 0 1 Overload (OLP) or undervoltage (UVP) 1 0 Junction temperature higher than 125°C (overtemperature warning) 1 1 Junction temperature lower than 125°C and no OLP or UVP faults (normal operation) Note that asserting either RESET_AB or RESET_CD low forces the SD signal high, independent of faults being present. TI recommends to monitoring the OTW signal using the system microcontroller and responding to an overtemperature warning signal by, e.g., turning down the volume to prevent further heating of the device resulting in device shutdown (OTE). To reduce external component count, an internal pullup resistor to 3.3V is provided on both SD and OTW outputs. Level compliance for 5-V logic can be obtained by adding external pullup resistors to 5 V (see the Electrical Characteristics section of this data sheet for further specifications). DEVICE PROTECTION SYSTEM TAS5152 contains advanced protection circuitry carefully designed to facilitate system integration and ease of use, as well as to safeguard the device from permanent failure due to a wide range of fault conditions such as short circuits, overload, overtemperature, and undervoltage. The TAS5152 responds to a fault by immediately setting the power stage in a high-impedance state (Hi-Z) and asserting the SD pin low. In situations other than overload, the device automatically recovers when the fault condition has been removed, i.e., the junction temperature has dropped or the voltage supply has increased. For highest possible reliability, recovering from an overload fault requires external reset of the device (see the Device Reset section of this data sheet) no sooner than 1 second after the shutdown. This device requires at least 50 ns of low time on the output per 384-kHz PWM frame rate in order to keep the bootstrap capacitors charged. As an example, if the modulation index is set to 99.2% in the TAS5508, this setting allows PWM pulse durations down to 20 ns. This signal, which does not meet the 50-ns requirement, is sent to the PWM_x pin and this low-state pulse time does not allow the bootstrap capacitor to stay charged. In this situation, the low voltage across the bootstrap capacitor can cause a failure of the high-side MOSFET transistor, especially when driving a low-impedance load. The TAS5152 device requires limiting the TAS5508 modulation index to 96.1% to keep the bootstrap capacitor charged under all signals and loads. Therefore, TI strongly recommends using a TI PWM processor, such as TAS5508 or TAS5086, with the modulation index set at 96.1% to interface with TAS5152. Overcurrent (OC) Protection With Current Limiting and Overload Detection The device has independent, fast-reacting current detectors with programmable trip threshold (OC threshold) on all high-side and low-side power-stage FETs. See the following table for OC-adjust resistor values. The detector outputs are closely monitored by two protection systems. The first protection system controls the power stage in order to prevent the output current from further increasing, i.e., it performs a current-limiting function rather than prematurely shutting down during combinations of high-level music transients and extreme speaker load impedance drops. If the high-current situation persists, i.e., the power stage is being overloaded, a second protection system triggers a latching shutdown, resulting in the power stage being set in the high-impedance (Hi-Z) state. Current limiting and overload protection are independent for the half-bridges A and B and, respectively, C and D. That is, if the bridge-tied load between half-bridges A and B causes an overload fault, only half-bridges A and B are shut down. D For the lowest-cost bill of materials in terms D of component selection, the OC threshold measure should be limited, considering the power output requirement and minimum load impedance. Higher-impedance loads require a lower OC threshold. The demodulation-filter inductor must retain at least 3 µH of inductance at twice the OC threshold setting. 21 www.ti.com SLES127 − FEBRUARY 2005 Unfortunately, most inductors have decreasing inductance with increasing temperature and increasing current (saturation). To some degree, an increase in temperature naturally occurs when operating at high output currents, due to core losses and the DC resistance of the inductor’s copper winding. A thorough analysis of inductor saturation and thermal properties is strongly recommended. resulting in all half-bridge outputs being set in the high-impedance state (Hi-Z) and SD being asserted low. OTE is latched in this case. To clear the OTE latch, both RESET_AB and RESET_CD must be asserted. Thereafter, the device resumes normal operation. Setting the OC threshold too low might cause issues such as lack of enough output power and/or unexpected shutdowns due to too-sensitive overload detection. The UVP and POR circuits of the TAS5152 fully protect the device in any power-up/down and brownout situation. While powering up, the POR circuit resets the overload circuit (OLP) and ensures that all circuits are fully operational when the GVDD_X and VDD supply voltages reach 9.8 V (typical). Although GVDD_X and VDD are independently monitored, a supply voltage drop below the UVP threshold on any VDD or GVDD_X pin results in all half-bridge outputs immediately being set in the high-impedance state (Hi-Z) and SD being asserted low. The device automatically resumes operation when all supply voltages have increased above the UVP threshold. In general, it is recommended to follow closely the external component selection and PCB layout as given in the Application section. For added flexibility, the OC threshold is programmable within a limited range using a single external resistor connected between the OC_ADJ pin and AGND. (See the Electrical Characteristics section of this data sheet for information on the correlation between programmingresistor value and the OC threshold.) It should be noted that a properly functioning overcurrent detector assumes the presence of a properly designed demodulation filter at the power-stage output. Short-circuit protection is not provided directly at the output pins of the power stage but only on the speaker terminals (after the demodulation filter). It is required to follow certain guidelines when selecting the OC threshold and an appropriate demodulation inductor: OC-Adjust Resistor Values (kW) Max. Current Before OC Occurs (A) 15 10.8 22 9.4 27 8.6 39 6.4 47 6 69 4.7 Overtemperature Protection The TAS5152 has a two-level temperature-protection system that asserts an active-low warning signal (OTW) when the device junction temperature exceeds 125°C (nominal) and, if the device junction temperature exceeds 155°C (nominal), the device is put into thermal shutdown, 22 Undervoltage Protection (UVP) and Power-On Reset (POR) DEVICE RESET Two reset pins are provided for independent control of half-bridges A/B and C/D. When RESET_AB is asserted low, all four power-stage FETs in half-bridges A and B are forced into a high-impedance state (Hi-Z). Likewise, asserting RESET_CD low forces all four power-stage FETs in half-bridges C and D into a high-impedance state. Thus, both reset pins are well suited for hard-muting the power stage if needed. In BTL modes, to accommodate bootstrap charging prior to switching start, asserting the reset inputs low enables weak pulldown of the half-bridge outputs. In the SE mode, the weak pulldowns are not enabled, and it is therefore recommended to ensure bootstrap capacitor charging by providing a low pulse on the PWM inputs when reset is asserted high. Asserting either reset input low removes any fault information to be signalled on the SD output, i.e., SD is forced high. A rising-edge transition on either reset input allows the device to resume operation after an overload fault. www.ti.com SLES127 − FEBRUARY 2005 MECHANICAL DATA 23 PACKAGE OPTION ADDENDUM www.ti.com 30-Mar-2005 PACKAGING INFORMATION Orderable Device Status (1) Package Type Package Drawing Pins Package Eco Plan (2) Qty TAS5152DKD ACTIVE SSOP DKD 36 29 TAS5152DKDR ACTIVE SSOP DKD 36 500 Lead/Ball Finish MSL Peak Temp (3) Pb-Free (RoHS) CU SNBI Level-4-260C-72 HR/ Level-2-220C-1 YEAR Pb-Free (RoHS) CU SNBI Level-4-260C-72 HR/ Level-2-220C-1 YEAR (1) The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device. (2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS) or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability information and additional product content details. TBD: The Pb-Free/Green conversion plan has not been defined. Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes. Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material) (3) MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature. Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals. 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