PRELIMINARY DATA SHEET LP6836SOT343 PACKAGED MEDIUM POWER PHEMT • FEATURES ♦ 0.5 dB Noise Figure at 2 GHz ♦ 19 dBm P-1dB 2 GHz, 19 dBm at 6 GHz ♦ 20 dB Power Gain at 2 GHz, 10 dB at 6 GHz ♦ 70% Power-Added-Efficiency • DESCRIPTION AND APPLICATIONS The LP6836SOT343 is a packaged AlGaAs/InGaAs/AlGaAs pseudomorphic high electron mobility transistor (pHEMT) intended for applications requiring medium output power and/or high dynamic range. It utilizes a 0.25 µm x 360 µm Schottky barrier gate, defined by electron-beam photolithography. The LP6836’s active areas are passivated with Si3N4, and the SOT343 (also known as SC-70) package is ideal for low-cost, high-performance applications that require a surfacemount package. The LP6836SOT343 is designed for commercial systems for use in low noise amplifiers and oscillators operating over the RF and Microwave frequency ranges. The low noise figure makes it appropriate for use in receivers in MMDS and GPS. This device is also suitable as a driver stage for WLAN and ISM band spread spectrum applications. • ELECTRICAL SPECIFICATIONS @ TAmbient = 25°°C Parameter Symbol Test Conditions Min Typ Max Saturated Drain-Source Current IDSS VDS = 2 V; VGS = 0 V 80 Power at 1-dB Compression P-1dB f=2GHz; VDS = 3 V; IDS = 50% IDSS 18 19 dBm Power Gain at 1-dB Compression G-1dB f=2GHz; VDS = 3 V; IDS = 50% IDSS 18 20 dB Power-Added Efficiency PAE f=2GHz; VDS = 3 V; IDS = 50% IDSS; POUT = 19.5 dBm 70 % Noise Figure NF f=2GHz; VDS = 3V; IDS = 25% IDSS 0.5 dB f=2GHz; VDS = 3V; IDS = 50% IDSS 0.7 dB 100 mS mA Transconductance GM VDS = 2 V; VGS = 0 V Gate-Source Leakage Current IGSO VGS = -5 V Pinch-Off Voltage VP VDS = 2 V; IDS = 2 mA -0.25 Gate-Source Breakdown Voltage Magnitude |VBDGS| IGS = 2 mA 11 15 V Gate-Drain Breakdown Voltage Magnitude |VBDGD| IGD = 2 mA 12 16 V Phone: (408) 988-1845 Fax: (408) 970-9950 http:// www.filss.com 75 125 Units 1 10 µA -2.0 V Revised: 1/20/01 Email: [email protected] PRELIMINARY DATA SHEET LP6836SOT343 PACKAGED MEDIUM POWER PHEMT • ABSOLUTE MAXIMUM RATINGS Parameter Symbol Test Conditions Drain-Source Voltage VDS Gate-Source Voltage Min Max Units TAmbient = 22 ± 3 °C 7 V VGS TAmbient = 22 ± 3 °C -3 V Drain-Source Current IDS TAmbient = 22 ± 3 °C IDSS mA Gate Current IG TAmbient = 22 ± 3 °C 5 mA RF Input Power PIN TAmbient = 22 ± 3 °C 60 mW Channel Operating Temperature TCH TAmbient = 22 ± 3 °C 175 ºC Storage Temperature TSTG — 175 ºC -65 Notes: Even temporary operating conditions that exceed the Absolute Maximum Ratings could result in permanent damage to the device. • HANDLING PRECAUTIONS To avoid damage to the devices care should be exercised during handling. Proper Electrostatic Discharge (ESD) precautions should be observed at all stages of storage, handling, assembly, and testing. These devices should be treated as Class 1A (0-500 V). Further information on ESD control measures can be found in MIL-STD-1686 and MIL-HDBK-263. • APPLICATIONS NOTES & DESIGN DATA Applications Notes are available from your local Filtronic Sales Representative or directly from the factory. Complete design data, including S-parameters, noise data, and large-signal models are available on the Filtronic web site. • PACKAGE OUTLINE (dimensions in mm) SOURCE GATE DRAIN SOURCE All information and specifications are subject to change without notice. Phone: (408) 988-1845 Fax: (408) 970-9950 http:// www.filss.com Revised: 1/20/01 Email: [email protected]