LP1500SOT89 LOW NOISE, HIGH LINEARITY PACKAGED PHEMT • FEATURES ♦ 27.5 dBm Output Power at 1-dB Compression at 1.8 GHz ♦ 17 dB Power Gain at 1.8 GHz ♦ 1.0 dB Noise Figure ♦ 44 dBm Output IP3 at 1.8 GHz ♦ 50% Power-Added Efficiency • DESCRIPTION AND APPLICATIONS The LP1500SOT89 is a packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) pseudomorphic High Electron Mobility Transistor (pHEMT). It utilizes a 0.25 µm x 1500 µm Schottky barrier gate, defined by electron-beam photolithography. The recessed “mushroom” gate structure minimizes parasitic gate-source and gate resistance. The epitaxial structure and processing have been optimized for reliable high-power applications. The LP1500 also features Si3N4 passivation and is available in die form or in other packages. Typical applications include drivers or output stages in PCS/Cellular amplifiers, WLL and WLAN systems, and other types of wireless infrastructure systems. • ELECTRICAL SPECIFICATIONS @ TAmbient = 25°C Parameter Symbol Test Conditions Min Typ Max Units Saturated Drain-Source Current IDSS VDS = 2 V; VGS = 0 V LP1500SOT89-1 375 420 450 mA LP1500SOT89-2 451 490 526 mA LP1500SOT89-3 527 560 600 mA Power at 1-dB Compression P-1dB VDS = 5 V; IDS = 50% IDSS 26 27.5 dBm Power Gain at 1-dB Compression G-1dB VDS = 5 V; IDS = 50% IDSS 15 17 dB Power-Added Efficiency PAE VDS = 5 V; IDS = 50% IDSS; PIN = 15 dBm 50 % Noise Figure NF VDS = 5 V; IDS = 50% IDSS 1.0 dB Output Third-Order Intercept Point IP3 VDS = 5V; IDS = 50% IDSS; PIN = -1 dBm 44 dBm Maximum Drain-Source Current IMAX VDS = 2 V; VGS = 1 V 925 mA Transconductance GM VDS = 2 V; VGS = 0 V 400 mS Gate-Source Leakage Current IGSO VGS = -5 V Pinch-Off Voltage VP VDS = 2 V; IDS = 8 mA Gate-Source Breakdown Voltage Magnitude |VBDGS| Gate-Drain Breakdown Voltage Magnitude frequency=1.8 GHz |VBDGD| Phone: (408) 988-1845 Fax: (408) 970-9950 300 10 100 µA -0.25 -1.2 -2.0 V IGS = 8 mA -10 -12 V IGD = 8 mA -10 -13 V http:// www.filss.com Revised: 1/16/02 Email: [email protected] LP1500SOT89 LOW NOISE, HIGH LINEARITY PACKAGED PHEMT • ABSOLUTE MAXIMUM RATINGS Notes: • • • • • Parameter Symbol Test Conditions Drain-Source Voltage VDS Gate-Source Voltage Min Max Units TAmbient = 22 ± 3 °C 7 V VGS TAmbient = 22 ± 3 °C -3 V Drain-Source Current IDS TAmbient = 22 ± 3 °C IDSS mA Gate Current IG TAmbient = 22 ± 3 °C 15 mA RF Input Power PIN TAmbient = 22 ± 3 °C 350 mW Channel Operating Temperature TCH TAmbient = 22 ± 3 °C 175 ºC Storage Temperature TSTG — 175 ºC Total Power Dissipation PTOT TAmbient = 22 ± 3 °C 2.3 W -65 Operating conditions that exceed the Absolute Maximum Ratings could result in permanent damage to the device. Power Dissipation defined as: PTOT ≡ (PDC + PIN) – POUT, where PDC: DC Bias Power PIN: RF Input Power POUT: RF Output Power Absolute Maximum Power Dissipation to be de-rated as follows above 25°C: PTOT= 2.3W – (0.015W/°C) x TPACK where TPACK = source tab lead temperature This PHEMT is susceptible to damage from Electrostatic Discharge. Proper precautions should be used when handling these devices. OPTIMUM POWER OUTPUT MATCHING Frequency (GHz) Load State Magnitude Phase 1.8 0.61 -146° 2.2 0.52 -143° 2.5 0.56 -141° • HANDLING PRECAUTIONS To avoid damage to the devices care should be exercised during handling. Proper Electrostatic Discharge (ESD) precautions should be observed at all stages of storage, handling, assembly, and testing. These devices should be treated as Class 1A (0-500 V). Further information on ESD control measures can be found in MIL-STD-1686 and MIL-HDBK-263. • APPLICATIONS NOTES & DESIGN DATA Applications Notes are available from your local Filtronic Sales Representative or directly from the factory. Complete design data, including S-parameters, noise data, and large-signal models are available on the Filtronic web site. Phone: (408) 988-1845 Fax: (408) 970-9950 http:// www.filss.com Revised: 1/16/02 Email: [email protected] LP1500SOT89 LOW NOISE, HIGH LINEARITY PACKAGED PHEMT • PACKAGE OUTLINE (dimensions in inches) All information and specifications are subject to change without notice. Phone: (408) 988-1845 Fax: (408) 970-9950 http:// www.filss.com Revised: 1/16/02 Email: [email protected]