PRELIMINARY FPD10000V 10W POWER PHEMT FOR WIMAX POWER AMPLIFIERS • • PERFORMANCE (3.5 GHz) (802.16-2004 WiMAX Modulation) ♦ 30 dBm Output Power, < 2.5% EVM ♦ 9.5 dB Power Gain ♦ Class AB Efficiency 10% (10V / 1A IDQ) GATE DRAIN ♦ Class B Efficiency 18% (8V / 300 mA IDQ) BOND PAD BOND PAD ♦ 39 dBm CW Output Power (16X) (16X) ♦ > 48 dBm 3rd Order Intercept Point ♦ Plated Source Vias – No Source wirebonds needed ♦ 2.5 and 3.5 GHz Evaluation boards available (packaged device) DIE SIZE (µm): 3750 x 750 DIE THICKNESS: 50µm BONDING PADS (µm): >70 x 60 SEE BONDING DIAGRAM BELOW DESCRIPTION AND APPLICATIONS The FPD10000V is a discrete depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (pHEMT), optimized for WiMAX (WMAN) IEEE 802.16 power amplifiers. The device can be biased from Class C (IDQ < 200 mA), to Class A (IDQ = 1.0 – 1.5 A) to deliver optimal linear power over the desired output power range. The FPD10000V is also available in packaged form. • ELECTRICAL SPECIFICATIONS AT 22°C Parameter Symbol Test Conditions Min Typ Max Units RF SPECIFICATIONS MEASURED AT f = 3.5 GHz Power at 1dB Gain Compression P1dB dBm 9.5 dB 31.0 31.5 dBm 29.5 30 dBm Class AB Mode 10 % Class B Mode 20 ΓS and ΓL tuned for Optimum IP3 CW Single Tone Power Gain at dB Gain Compression 39.5 VDS = 10V; IDQ = 1.0 A G1dB CW Single Tone VDS = 10V; IDQ = 1.0 A Class AB Mode Channel Power with 802.16-2004 2.5% max. EVM PCH Channel Power with 802.16-2004 2.5% max. EVM PCH Power-Added Efficiency Eff Class AB Mode VDS = 10 V; IDQ = 1.0 A Class B Mode VDS = 8 V; IDQ = 350 mA typ. 802.16-2004 modulation Saturated Drain-Source Current IDSS VDS = 1.3 V; VGS = 0 V 5.2 A Gate-Source Leakage Current IGSO VGS = -3 V 3 mA Pinch-Off Voltage |VP| VDS = 1.3 V; IDS = 19 mA Gate-Drain Breakdown Voltage |VBDGD| IGD = 19 mA Thermal Resistivity ΘCC See Note on following page Phone: +1 408 850-5790 Fax: +1 408 850-5766 http:/www.filtronic.co.uk/semis 30 1.1 V 35 V 3.5 °C/W Revised: 8/5/05 Email: [email protected] PRELIMINARY FPD10000V 10W POWER PHEMT FOR WIMAX POWER AMPLIFIERS • RECOMMENDED OPERATING BIAS CONDITIONS Drain-Source Voltage: From 6V to 12V Quiescent Current: From 200mA (Class B) to 1.5A (Class A) • ABSOLUTE MAXIMUM RATINGS1 Parameter Symbol Test Conditions Drain-Source Voltage VDS Gate-Source Voltage Max Units -3V < VGS < +0V 15 V VGS 0V < VDS < +8V -3 V Drain-Source Current IDS For VDS > 2V 0.5IDSS mA Gate Current IG Forward or reverse current +60/-15 mA RF Input Power 2 PIN Under any acceptable bias state 2.25 W Channel Operating Temperature TCH Under any acceptable bias state 175 ºC Storage Temperature TSTG Non-Operating Storage 150 ºC Total Power Dissipation PTOT See De-Rating Note below 40 W Comp. Under any bias conditions 5 dB 2 or more Max. Limits 80 % Gain Compression 3 Simultaneous Combination of Limits 1 3 Min TAmbient = 22°C unless otherwise noted -40 2 Max. RF Input Limit must be further limited if input VSWR > 2.5:1 Users should avoid exceeding 80% of 2 or more Limits simultaneously Notes: • Operating conditions that exceed the Absolute Maximum Ratings could result in permanent damage to the device. • Thermal Resitivity specification assumes a Au/Sn eutectic die attach onto a Au-plated copper heatsink or rib. • Power Dissipation defined as: PTOT ≡ (PDC + PIN) – POUT, where PDC: DC Bias Power PIN: RF Input Power POUT: RF Output Power • Absolute Maximum Power Dissipation to be de-rated as follows above 22°C: PTOT= 40W – (0.29W/°C) x THS where THS = heatsink or ambient temperature above 22°C Example: For a 85°C heatsink temperature: PTOT = 40W – (0.29 x (85 – 22)) = 21.7W • HANDLING PRECAUTIONS To avoid damage to the devices care should be exercised during handling. Proper Electrostatic Discharge (ESD) precautions should be observed at all stages of storage, handling, assembly, and testing. This product has be tested to Class 1A (> 250V but < 500V) using JESD22 A114, Human Body Model, and to Class A, (< 200V) using JESD22 A115, Machine Model.. • ASSEMBLY INSTRUCTIONS The recommended die attach is gold/tin eutectic solder under a nitrogen atmosphere. Stage temperature should be 280-290°C; maximum time at temperature is one minute. The recommended wire bond method is thermo-compression wedge bonding with 1.0 mil (0.025 mm) gold wire. Stage temperature should be 250-260°C. Phone: +1 408 850-5790 Fax: +1 408 850-5766 http:/www.filtronic.co.uk/semis Revised: 8/5/05 Email: [email protected] PRELIMINARY FPD10000V 10W POWER PHEMT FOR WIMAX POWER AMPLIFIERS • APPLICATIONS NOTES & DESIGN DATA Recommendations on matching circuits is available from your local Filtronic Sales Representative or directly from the factory. User must ensure that proper bias sequencing is observed: Gate bias must be applied before Drain bias, and during power-down the Drain bias must be removed first. • BONDING / ASSEMBLY DIAGRAM Notes: ¾ 25 µm (0.001 in.) gold wire is recommended. No Source wire bonds are needed, device features Source thru-vias. 16 bonds each side, Gate and Drain. ¾ User must ensure that the die attach material is uniform and free of voiding underneath the die to ensure proper thermal heatsinking. A useful guideline is a 0.001 – 0.002 in. (0.025 – 0.050 mm) fillet of die attach material all around the periphery of the die. All information and specifications are subject to change without notice. Phone: +1 408 850-5790 Fax: +1 408 850-5766 http:/www.filtronic.co.uk/semis Revised: 8/5/05 Email: [email protected]