FILTRONIC FPD10000V

PRELIMINARY
FPD10000V
10W POWER PHEMT FOR WIMAX POWER AMPLIFIERS
•
•
PERFORMANCE (3.5 GHz)
(802.16-2004 WiMAX Modulation)
♦ 30 dBm Output Power, < 2.5% EVM
♦ 9.5 dB Power Gain
♦ Class AB Efficiency 10% (10V / 1A IDQ)
GATE
DRAIN
♦ Class B Efficiency 18% (8V / 300 mA IDQ)
BOND PAD
BOND PAD
♦ 39 dBm CW Output Power
(16X)
(16X)
♦ > 48 dBm 3rd Order Intercept Point
♦ Plated Source Vias – No Source wirebonds needed
♦ 2.5 and 3.5 GHz Evaluation boards available (packaged device)
DIE SIZE (µm): 3750 x 750
DIE THICKNESS: 50µm
BONDING PADS (µm): >70 x 60
SEE BONDING DIAGRAM BELOW
DESCRIPTION AND APPLICATIONS
The FPD10000V is a discrete depletion mode AlGaAs/InGaAs pseudomorphic High Electron
Mobility Transistor (pHEMT), optimized for WiMAX (WMAN) IEEE 802.16 power amplifiers.
The device can be biased from Class C (IDQ < 200 mA), to Class A (IDQ = 1.0 – 1.5 A) to deliver
optimal linear power over the desired output power range. The FPD10000V is also available in
packaged form.
•
ELECTRICAL SPECIFICATIONS AT 22°C
Parameter
Symbol
Test Conditions
Min
Typ
Max
Units
RF SPECIFICATIONS MEASURED AT f = 3.5 GHz
Power at 1dB Gain Compression
P1dB
dBm
9.5
dB
31.0
31.5
dBm
29.5
30
dBm
Class AB Mode
10
%
Class B Mode
20
ΓS and ΓL tuned for Optimum IP3
CW Single Tone
Power Gain at dB Gain Compression
39.5
VDS = 10V; IDQ = 1.0 A
G1dB
CW Single Tone
VDS = 10V; IDQ = 1.0 A
Class AB Mode
Channel Power with 802.16-2004
2.5% max. EVM
PCH
Channel Power with 802.16-2004
2.5% max. EVM
PCH
Power-Added Efficiency
Eff
Class AB Mode
VDS = 10 V; IDQ = 1.0 A
Class B Mode
VDS = 8 V; IDQ = 350 mA typ.
802.16-2004 modulation
Saturated Drain-Source Current
IDSS
VDS = 1.3 V; VGS = 0 V
5.2
A
Gate-Source Leakage Current
IGSO
VGS = -3 V
3
mA
Pinch-Off Voltage
|VP|
VDS = 1.3 V; IDS = 19 mA
Gate-Drain Breakdown Voltage
|VBDGD|
IGD = 19 mA
Thermal Resistivity
ΘCC
See Note on following page
Phone: +1 408 850-5790
Fax: +1 408 850-5766
http:/www.filtronic.co.uk/semis
30
1.1
V
35
V
3.5
°C/W
Revised: 8/5/05
Email: [email protected]
PRELIMINARY
FPD10000V
10W POWER PHEMT FOR WIMAX POWER AMPLIFIERS
•
RECOMMENDED OPERATING BIAS CONDITIONS
Drain-Source Voltage:
From 6V to 12V
Quiescent Current:
From 200mA (Class B) to 1.5A (Class A)
•
ABSOLUTE MAXIMUM RATINGS1
Parameter
Symbol
Test Conditions
Drain-Source Voltage
VDS
Gate-Source Voltage
Max
Units
-3V < VGS < +0V
15
V
VGS
0V < VDS < +8V
-3
V
Drain-Source Current
IDS
For VDS > 2V
0.5IDSS
mA
Gate Current
IG
Forward or reverse current
+60/-15
mA
RF Input Power
2
PIN
Under any acceptable bias state
2.25
W
Channel Operating Temperature
TCH
Under any acceptable bias state
175
ºC
Storage Temperature
TSTG
Non-Operating Storage
150
ºC
Total Power Dissipation
PTOT
See De-Rating Note below
40
W
Comp.
Under any bias conditions
5
dB
2 or more Max. Limits
80
%
Gain Compression
3
Simultaneous Combination of Limits
1
3
Min
TAmbient = 22°C unless otherwise noted
-40
2
Max. RF Input Limit must be further limited if input VSWR > 2.5:1
Users should avoid exceeding 80% of 2 or more Limits simultaneously
Notes:
• Operating conditions that exceed the Absolute Maximum Ratings could result in permanent damage to the device.
• Thermal Resitivity specification assumes a Au/Sn eutectic die attach onto a Au-plated copper heatsink or rib.
• Power Dissipation defined as: PTOT ≡ (PDC + PIN) – POUT, where
PDC: DC Bias Power
PIN: RF Input Power
POUT: RF Output Power
• Absolute Maximum Power Dissipation to be de-rated as follows above 22°C:
PTOT= 40W – (0.29W/°C) x THS
where THS = heatsink or ambient temperature above 22°C
Example: For a 85°C heatsink temperature: PTOT = 40W – (0.29 x (85 – 22)) = 21.7W
•
HANDLING PRECAUTIONS
To avoid damage to the devices care should be exercised during handling. Proper Electrostatic
Discharge (ESD) precautions should be observed at all stages of storage, handling, assembly, and
testing. This product has be tested to Class 1A (> 250V but < 500V) using JESD22 A114, Human
Body Model, and to Class A, (< 200V) using JESD22 A115, Machine Model..
•
ASSEMBLY INSTRUCTIONS
The recommended die attach is gold/tin eutectic solder under a nitrogen atmosphere. Stage
temperature should be 280-290°C; maximum time at temperature is one minute. The recommended
wire bond method is thermo-compression wedge bonding with 1.0 mil (0.025 mm) gold wire. Stage
temperature should be 250-260°C.
Phone: +1 408 850-5790
Fax: +1 408 850-5766
http:/www.filtronic.co.uk/semis
Revised: 8/5/05
Email: [email protected]
PRELIMINARY
FPD10000V
10W POWER PHEMT FOR WIMAX POWER AMPLIFIERS
•
APPLICATIONS NOTES & DESIGN DATA
Recommendations on matching circuits is available from your local Filtronic Sales Representative or
directly from the factory. User must ensure that proper bias sequencing is observed: Gate bias
must be applied before Drain bias, and during power-down the Drain bias must be removed
first.
•
BONDING / ASSEMBLY DIAGRAM
Notes:
¾ 25 µm (0.001 in.) gold wire is recommended. No Source wire bonds are needed, device
features Source thru-vias. 16 bonds each side, Gate and Drain.
¾ User must ensure that the die attach material is uniform and free of voiding underneath the
die to ensure proper thermal heatsinking. A useful guideline is a 0.001 – 0.002 in. (0.025 –
0.050 mm) fillet of die attach material all around the periphery of the die.
All information and specifications are subject to change without notice.
Phone: +1 408 850-5790
Fax: +1 408 850-5766
http:/www.filtronic.co.uk/semis
Revised: 8/5/05
Email: [email protected]