PRELIMINARY • PERFORMANCE (1.8 GHz) ♦ 33 dBm Output Power (P1dB) ♦ 14 dB Power Gain (G1dB) ♦ 46 dBm Output IP3 ♦ 10V Operation ♦ 50% Power-Added Efficiency ♦ Evaluation Boards Available ♦ Design Data Available on Website ♦ Usable Gain to 4GHz • DESCRIPTION AND APPLICATIONS FPD2000AS 2W PACKAGED POWER PHEMT SEE PACKAGE OUTLINE FOR MARKING CODE The FPD2000AS is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (pHEMT), optimized for power applications in L-Band. The surface-mount package has been optimized for low parasitics. Typical applications include drivers or output stages in PCS/Cellular base station transmitter amplifiers, as well as other power applications in WLL/WLAN amplifiers. • ELECTRICAL SPECIFICATIONS AT 22°C Parameter Symbol Test Conditions Min Typ Max Units RF SPECIFICATIONS MEASURED AT f = 1.8 GHz USING CW SIGNAL Power at 1dB Gain Compression P1dB VDS = 10V; IDS = 350 mA 32 33 12.5 14.0 dBm ΓS and ΓL tuned for Optimum IP3 Power Gain at dB Gain Compression G1dB VDS = 10V; IDS = 350 mA ΓS and ΓL tuned for Optimum IP3 Maximum Stable Gain MSG S21/S12 Power-Added Efficiency 3 -Order Intermodulation Distortion 20 dB 45 % PIN = 0dBm, 50Ω system PAE VDS = 10V; IDS = 350 mA ΓS and ΓL tuned for Optimum IP3 at 1dB Gain Compression rd VDS = 10 V; IDS = 350 mA IP3 VDS = 10V; IDS = 350 mA ΓS and ΓL tuned for Optimum IP3 -47 -44 dBc 1150 1325 mA POUT = 22 dBm (single-tone level) Saturated Drain-Source Current IDSS VDS = 1.3 V; VGS = 0 V 975 Maximum Drain-Source Current IMAX VDS = 1.3 V; VGS ≅ +1 V 1800 mA Transconductance GM VDS = 1.3 V; VGS = 0 V 1200 mS Gate-Source Leakage Current IGSO VGS = -3 V 35 85 1.4 µA Pinch-Off Voltage |VP| VDS = 1.3 V; IDS = 4 mA 0.7 0.9 Gate-Source Breakdown Voltage |VBDGS| IGS = 4 mA 14 16 V Gate-Drain Breakdown Voltage |VBDGD| IGD = 4 mA 20 22 V Thermal Resistivity (channel-to-case) ΘCC See Note on following page 20 °C/W Phone: +1 408 850-5790 Fax: +1 408 850-5766 http:// www.filcs.com V Revised: 05/03/04 Email: [email protected] PRELIMINARY • RECOMMENDED OPERATING BIAS CONDITIONS Drain-Source Voltage: From 5V to 10V Quiescent Current: From 25% IDSS to 55% IDSS • ABSOLUTE MAXIMUM RATINGS1 Parameter Symbol Test Conditions Drain-Source Voltage VDS Gate-Source Voltage FPD2000AS 2W PACKAGED POWER PHEMT Max Units -3V < VGS < +0V 12 V VGS 0V < VDS < +8V -3 V Drain-Source Current IDS For VDS > 2V IDSS mA Gate Current IG Forward / Reverse current +15/-2 mA PIN Under any acceptable bias state 900 mW Channel Operating Temperature TCH Under any acceptable bias state 175 ºC Storage Temperature TSTG Non-Operating Storage 150 ºC Total Power Dissipation PTOT See De-Rating Note below 7.6 W Comp. Under any bias conditions 5 dB RF Input Power 2 Gain Compression 3 Min -40 Simultaneous Combination of Limits 2 or more Max. Limits 80 2 TAmbient = 22°C unless otherwise noted Max. RF Input Limit must be further limited if input VSWR > 2.5:1 3 Users should avoid exceeding 80% of 2 or more Limits simultaneously % 1 Notes: • Operating conditions that exceed the Absolute Maximum Ratings will result in permanent damage to the device. • Total Power Dissipation defined as: PTOT ≡ (PDC + PIN) – POUT, where: PDC: DC Bias Power PIN: RF Input Power POUT: RF Output Power • Total Power Dissipation to be de-rated as follows above 22°C: PTOT= 7.6 - (0.05W/°C) x TPACK where TPACK = source tab lead temperature above 22°C (coefficient of de-rating formula is the Thermal Conductivity) Example: For a 55°C source lead temperature: PTOT = 7.6 - (0.05 x (55 – 22)) = 5.95W • For optimum heatsinking, metal-filled through (Source) via holes should be used directly below the central metallized ground pad on the bottom of the package. • Note on Thermal Resistivity: The nominal value of 20°C/W is measured with the package mounted on a large heatsink with thermal compound to ensure adequate (unsoldered) contact. The package temperature is referred to the Source leads. • HANDLING PRECAUTIONS To avoid damage to the devices care should be exercised during handling. Proper Electrostatic Discharge (ESD) precautions should be observed at all stages of storage, handling, assembly, and testing. These devices should be treated as Class 1A per ESD-STM5.1-1998, Human Body Model. Further information on ESD control measures can be found in MIL-STD-1686 and MIL-HDBK-263. Phone: +1 408 850-5790 Fax: +1 408 850-5766 http:// www.filcs.com Revised: 05/03/04 Email: [email protected] PRELIMINARY FPD2000AS 2W PACKAGED POWER PHEMT • BIASING GUIDELINES ¾ Active bias circuits provide good performance stabilization over variations of operating temperature, but require a larger number of components compared to self-bias or dual-biased. Such circuits should include provisions to ensure that Gate bias is applied before Drain bias, otherwise the pHEMT may be induced to self-oscillate. Contact your Sales Representative for additional information. ¾ Dual-bias circuits are relatively simple to implement, but will require a regulated negative voltage supply for depletion-mode devices such as the FPD2000AS. ¾ Self-biased circuits employ an RF-bypassed Source resistor to provide the negative Gate-Source bias voltage, and such circuits provide some temperature stabilization for the device. A nominal value for circuit development is 1.43 Ω for the recommended 200mA operating point. This approach will require a DC Source resistor capable of at least 200mW dissipation. ¾ The recommended 350mA bias point is nominally a Class AB mode. A small amount of RF gain expansion prior to the onset of compression is normal for this operating point. • PACKAGE OUTLINE (dimensions in millimeters – mm) PACKAGE MARKING CODE Example: f1ZD P2F f = Filtronic 1ZD = Lot and Date Code P2F = Status, Part Code, Part Type All information and specifications subject to change without notice. Phone: +1 408 850-5790 Fax: +1 408 850-5766 http:// www.filcs.com Revised: 05/03/04 Email: [email protected] PRELIMINARY • FPD2000AS 2W PACKAGED POWER PHEMT TYPICAL RF PERFORMANCE (VDS = 10V IDS = 350mA f = 2000 MHz): 34.00 3.50 32.00 3.00 30.00 2.50 28.00 2.00 26.00 Pout 1.50 Comp Point 24.00 1.00 22.00 .50 20.00 .00 18.00 4.00 6.00 8.00 10.00 12.00 14.00 16.00 18.00 20.00 Gain Compression (dB) Output Power (dBm) Power Transfer Characteristic -.50 22.00 Input Power (dBm) 70.00% 70.00% 60.00% 60.00% 50.00% 50.00% PAE (%) PAE Eff. 40.00% 40.00% 30.00% 30.00% 20.00% 20.00% 10.00% 10.00% .00% 6.00 8.00 10.00 12.00 14.00 16.00 18.00 20.00 22.00 Drain Efficiency (%) Drain Efficiency and PAE .00% 24.00 Input Power (dBm) Phone: +1 408 850-5790 Fax: +1 408 850-5766 http:// www.filcs.com Revised: 05/03/04 Email: [email protected] PRELIMINARY FPD2000AS 2W PACKAGED POWER PHEMT IM Products vs. Input Power -20.00 27.00 -25.00 Output Power (dBm) Pout Im3, dBc -35.00 23.00 -40.00 -45.00 21.00 IM Products (dBc) -30.00 25.00 -50.00 19.00 -55.00 17.00 -60.00 3.00 5.00 7.00 9.00 11.00 13.00 Input Power (dBm) Note: Graph above shows Input and Output power as single carrier or single-tone levels. IP3_dBm = 44 dBm 2.0 0.6 0 .8 1.0 FPD2000AS IP3 CONTOURS 2 GHz Swp Max 244 IP3_dBm = 42 dBm IP3_dBm = 50 dBm 0. 4 3.0 4 .0 IP3_dBm = 40 dBm 5.0 0 .2 IP3_dBm = 52 dBm 10.0 5.0 4.0 3.0 2.0 1.0 0.8 0.6 0.4 0 0.2 10 .0 IP3_dBm = 48 dBm -1 0.0 NOTE: IP3 contours generated with PIN = 11dB back-off from P1dB. Local maxima for best linearity located at: ΓL = 15 + j4.5 Ω and ΓL = 28 – j25 Ω with ΓS = 9.5 - j4 Ω - 0.2 -5 .0 IP3_dBm = 46 dBm -4 . 0 -3. 0 .0 -2 4 Phone: +1 408 850-5790 Fax: +1 408 850-5766 -1.0 -0 .8 -0. 6 . -0 http:// www.filcs.com Swp Min 1 Revised: 05/03/04 Email: [email protected] PRELIMINARY FPD2000AS 2W PACKAGED POWER PHEMT FPD2000AS POWER CONTOURS 2 GHz 0 .6 0.8 1.0 Swp Max 181 2. 0 Pout_dBm = 22 dBm 0. 4 3. 0 4.0 5.0 0 .2 Pout_dBm = 32 dBm 10.0 5.0 4.0 3.0 2.0 1.0 0.8 0.6 Pout_dBm = 34 dBm 0.4 0 0.2 10 .0 NOTE: Power contours measured at constant input power, level set to meet nominal P1dB rating at optimum match point. Optimum match: ΓS = 3 – j6 Ω and ΓL = 11 – j3 Ω -10 .0 Pout_dBm = 30 dBm -0 .2 -5 .0 -4 . 0 Pout_dBm = 28 dBm -3 .0 -0 .8 -0 . 6 Pout_dBm = 26 dBm .0 -2 4 Swp Min 1 -1.0 . -0 Pout_dBm = 24 dBm FPD2000AS I-V Curves 1.400 VGS = 0V Drain-Source Current (A) 1.200 1.000 VGS = -0.25V .800 VGS = -0.50V .600 VGS = -0.75V .400 VGS = -1.0V .200 .000 0.00 VGS = -1.25V 1.00 2.00 3.00 4.00 5.00 6.00 7.00 8.00 Drain-Source Voltage (V) Phone: +1 408 850-5790 Fax: +1 408 850-5766 http:// www.filcs.com Revised: 05/03/04 Email: [email protected] PRELIMINARY • FPD2000AS 2W PACKAGED POWER PHEMT RF PERFORMANCE OVER FREQUENCY: FPD2000AS at VDS = 10V and IDS = 350mA 30.0 25.0 Gain 20.0 15.0 S21 MSG 10.0 5.0 0.0 0 500 1000 1500 2000 2500 3000 3500 4000 Frequency (MHz) FPD2000AS at VDS = 10V and IDS = 350mA 40 35 Power (dBm) or Gain (dB) 30 P1dB 25 G1dB 20 15 10 5 0 500 1000 1500 2000 2500 3000 3500 4000 Frequency (MHz) Phone: +1 408 850-5790 Fax: +1 408 850-5766 http:// www.filcs.com Revised: 05/03/04 Email: [email protected]