FILTRONIC LMA417

LMA417
MEDIUM POWER PHEMT MMIC
•
FEATURES
♦
♦
♦
♦
♦
•
18 GHz to 24 GHz Frequency Band
19 dB Gain
23 dBm Output Power at Saturation
14 dB Input/Output Return Loss
+4 V Dual Bias Supply
DESCRIPTION AND APPLICATIONS
The Filtronic Solid State LMA417 is a 3-stage medium power PHEMT amplifier that provides 19dB
linear power gain with 1-dB gain compression power output of greater than +21dBm for commercial
mm-W (millimeter-wave) 18 & 23GHz PCN/PCS and 20GHz SatCom application. Ground is
provided to the circuitry through vias to the backside metallization.
•
ELECTRICAL SPECIFICATIONS @ TAmbient = 25°°C
(VDD = +4.0V, ZIN = ZOUT = 50Ω)
Parameter
Symbol
Small Signal Gain
S21
Test Conditions
60% IDSS
Operating Frequency
Min
Typ
18±0.5 GHz
18
19
dB
20±0.5 GHz
17
18
dB
23±0.5 GHz
17
18
dB
18
dB
24.5-26.5 GHz
Saturated Drain Current
IDSS
Small Signal Gain Flatness
∆S21
165
495
Units
mA
18-24 GHz
±1
dB
24-26.5 GHz
±1.5
dB
21
dBm
Power at 1-dB Compression
P-1dB
Power at Saturation
PSAT
23
dBm
Input Return Loss
S11
-14
dB
Output Return Loss
S22
-14
dB
Reverse Isolation
S12
-48
dB
Phone: (408) 988-1845
Fax: (408) 970-9950
60% IDSS
360
Max
http:// www.filss.com
Revised: 03/23/01
Email: [email protected]
LMA417
MEDIUM POWER PHEMT MMIC
•
ABSOLUTE MAXIMUM RATINGS
Parameter
Notes:
•
•
•
•
Symbol
Test Conditions
Drain Voltage
VD
Gate Voltage
Min
Max
Units
TAmbient = 22 ± 3 °C
7
V
VG
TAmbient = 22 ± 3 °C
-1
V
Operating Current
IOP
TAmbient = 22 ± 3 °C
495
mA
RF Input Power
PIN
TAmbient = 22 ± 3 °C
15
dBm
Total Power Dissipation
PTOT
TAmbient = 22 ± 3 °C
3.5
W
Channel Operating Temperature
TCH
TAmbient = 22 ± 3 °C
150
ºC
Storage Temperature
Maximum Assembly Temperature
(1 min. max.)
TSTG
—
165
ºC
TMAX
—
300
ºC
-65
Operating conditions that exceed the Absolute Maximum Ratings could result in permanent damage to the device.
Recommended Continuous Operating Limits should be observed for reliable device operation.
Power Dissipation defined as: PTOT ≡ (PDC + PIN) – POUT, where
PDC: DC Bias Power
PIN: RF Input Power
POUT: RF Output Power
This GaAs MMIC is susceptible to damage from Electrostatic Discharge. Proper precautions should be used when
handling these devices.
Phone: (408) 988-1845
Fax: (408) 970-9950
http:// www.filss.com
Revised: 03/23/01
Email: [email protected]
LMA417
MEDIUM POWER PHEMT MMIC
•
ASSEMBLY DRAWING
Notes:
•
•
•
•
Recommended lead bond technique is thermocompression wedge bonding with 0.001” (25µm) diameter wire. The
bond tool force shall be 35-38 gram. Bonding stage temperature shall be 230-240°C, heated tool (150-160°C) is
recommended. Ultrasonic bonding is not recommended.
The recommended die attach is a eutectic 80/20 Gold/Tin solder, using a stage temperature of 285-290°C.
Bond on bond or stitch bond acceptable.
Conductor over conductor acceptable. Conductors must not short.
Phone: (408) 988-1845
Fax: (408) 970-9950
http:// www.filss.com
Revised: 03/23/01
Email: [email protected]
LMA417
MEDIUM POWER PHEMT MMIC
•
MECHANICAL OUTLINE
Notes:
•
•
•
•
•
All units are in microns (µm).
All bond pads are 100 X 100 µm 2 .
Bias pad (VDD ) size is 100 X 121.5 µm 2 .
Unless otherwise specified.
HANDLING PRECAUTIONS
To avoid damage to the devices care should be exercised during handling. Proper Electrostatic
Discharge (ESD) precautions should be observed at all stages of storage, handling, assembly, and
testing. These devices should be treated as Class 1A (0-500 V). Further information on ESD control
measures can be found in MIL-STD-1686 and MIL-HDBK-263.
All information and specifications are subject to change without notice.
Phone: (408) 988-1845
Fax: (408) 970-9950
http:// www.filss.com
Revised: 03/23/01
Email: [email protected]