FILTRONIC LMA411

LMA411
LOW NOISE PHEMT MMIC
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FEATURES
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8.5 GHz to 14 GHz Frequency Band
2 dB Noise Figure
18 dB Gain
19 dBm Output Power at Saturation
+6 V Single Bias Supply
DESCRIPTION AND APPLICATIONS
The Filtronic Solid State LMA411 is a high dynamic range low noise PHEMT amplifier that
operates from 8.5 to 14GHz. Reactively matched 2-stage amplifier provides 18dB nominal gain with
2dB typical noise figure and 1-dB gain compression power output of +17dBm that can be used as a
pre-driver amplifier for phased array radar as well as commercial communications applications.
Ground is provided to the circuitry through vias to the backside metallization.
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ELECTRICAL SPECIFICATIONS @ TAmbient = 25°C
(VDD = +6.0V, ZIN = ZOUT = 50Ω)
Parameter
Symbol
Frequency Band
F
Small Signal Gain
S21
RS = 10/5Ω, IDS = 50% IDSS
17
18
Saturated Drain Current
IDSS
RS = 0/0Ω
105
225
315
mA
Small Signal Gain Flatness
∆S21
±0.8
±1.2
dB
Noise Figure
NF
2
3.5
dB
Power at 1-dB Compression
P-1dB
17
Output Power at Saturation
PSAT
Input Return Loss
S11
-10
dB
Output Return Loss
S22
-14
dB
Reverse Isolation
S12
-34
dB
Phone: (408) 988-1845
Fax: (408) 970-9950
Test Conditions
Min
Typ
8.5
19
http:// www.filss.com
Max
Units
14
GHz
dB
dBm
dBm
Revised: 09/07/01
Email: [email protected]
LMA411
LOW NOISE PHEMT MMIC
•
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
Test Conditions
Drain Voltage
VD
Operating Current
Min
Max
Units
TAmbient = 22 ± 3 °C
7
V
IOP
TAmbient = 22 ± 3 °C
315
mA
RF Input Power
PIN
TAmbient = 22 ± 3 °C
15
dBm
Total Power Dissipation
PTOT
TAmbient = 22 ± 3 °C
2
W
Channel Operating Temperature
TCH
TAmbient = 22 ± 3 °C
150
ºC
Storage Temperature
Maximum Assembly Temperature
(1 min. max.)
TSTG
—
165
ºC
TMAX
—
300
ºC
-65
Notes:
• Operating conditions that exceed the Absolute Maximum Ratings could result in permanent damage to the device.
• Recommended Continuous Operating Limits should be observed for reliable device operation.
• Power Dissipation defined as: PTOT ≡ (PDC + PIN) – POUT, where
PDC: DC Bias Power
PIN: RF Input Power
POUT: RF Output Power
• This GaAs MMIC is susceptible to damage from Electrostatic Discharge. Proper precautions should be used when
handling these devices.
Phone: (408) 988-1845
Fax: (408) 970-9950
http:// www.filss.com
Revised: 09/07/01
Email: [email protected]
LMA411
LOW NOISE PHEMT MMIC
•
ASSEMBLY DRAWING
50% of Idss BIAS
Notes:
• Recommended lead bond technique is thermocompression wedge bonding with 0.001” (25µm) diameter wire. The
bond tool force shall be 35-38 gram. Bonding stage temperature shall be 230-240°C, heated tool (150-160°C) is
recommended. Ultrasonic bonding is not recommended.
• The recommended die attach is a eutectic 80/20 Gold/Tin solder, using a stage temperature of 285-290°C.
Maximum time at temperature is 1 minute. Use of forming gas (90% N2 , 10% H2 ) for best results.
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•
Bond on bond or stitch bond acceptable.
Conductor over conductor acceptable. Conductors must not short.
Phone: (408) 988-1845
Fax: (408) 970-9950
http:// www.filss.com
Revised: 09/07/01
Email: [email protected]
LMA411
LOW NOISE PHEMT MMIC
•
ASSEMBLY DRAWING
75% of Idss BIAS
Phone: (408) 988-1845
Fax: (408) 970-9950
http:// www.filss.com
Revised: 09/07/01
Email: [email protected]
LMA411
LOW NOISE PHEMT MMIC
•
MECHANICAL OUTLINE
Notes:
• All units are in microns (µm).
• All bond pads are 100 X 100 µm2 .
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• Unless otherwise specified.
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HANDLING PRECAUTIONS
To avoid damage to the devices care should be exercised during handling. Proper Electrostatic
Discharge (ESD) precautions should be observed at all stages of storage, handling, assembly, and
testing. These devices should be treated as Class 1A (0-500 V). Further information on ESD control
measures can be found in MIL-STD-1686 and MIL-HDBK-263.
All information and specifications are subject to change without notice.
Phone: (408) 988-1845
Fax: (408) 970-9950
http:// www.filss.com
Revised: 09/07/01
Email: [email protected]