LMA411 LOW NOISE PHEMT MMIC • FEATURES ♦ ♦ ♦ ♦ ♦ • 8.5 GHz to 14 GHz Frequency Band 2 dB Noise Figure 18 dB Gain 19 dBm Output Power at Saturation +6 V Single Bias Supply DESCRIPTION AND APPLICATIONS The Filtronic Solid State LMA411 is a high dynamic range low noise PHEMT amplifier that operates from 8.5 to 14GHz. Reactively matched 2-stage amplifier provides 18dB nominal gain with 2dB typical noise figure and 1-dB gain compression power output of +17dBm that can be used as a pre-driver amplifier for phased array radar as well as commercial communications applications. Ground is provided to the circuitry through vias to the backside metallization. • ELECTRICAL SPECIFICATIONS @ TAmbient = 25°C (VDD = +6.0V, ZIN = ZOUT = 50Ω) Parameter Symbol Frequency Band F Small Signal Gain S21 RS = 10/5Ω, IDS = 50% IDSS 17 18 Saturated Drain Current IDSS RS = 0/0Ω 105 225 315 mA Small Signal Gain Flatness ∆S21 ±0.8 ±1.2 dB Noise Figure NF 2 3.5 dB Power at 1-dB Compression P-1dB 17 Output Power at Saturation PSAT Input Return Loss S11 -10 dB Output Return Loss S22 -14 dB Reverse Isolation S12 -34 dB Phone: (408) 988-1845 Fax: (408) 970-9950 Test Conditions Min Typ 8.5 19 http:// www.filss.com Max Units 14 GHz dB dBm dBm Revised: 09/07/01 Email: [email protected] LMA411 LOW NOISE PHEMT MMIC • ABSOLUTE MAXIMUM RATINGS Parameter Symbol Test Conditions Drain Voltage VD Operating Current Min Max Units TAmbient = 22 ± 3 °C 7 V IOP TAmbient = 22 ± 3 °C 315 mA RF Input Power PIN TAmbient = 22 ± 3 °C 15 dBm Total Power Dissipation PTOT TAmbient = 22 ± 3 °C 2 W Channel Operating Temperature TCH TAmbient = 22 ± 3 °C 150 ºC Storage Temperature Maximum Assembly Temperature (1 min. max.) TSTG — 165 ºC TMAX — 300 ºC -65 Notes: • Operating conditions that exceed the Absolute Maximum Ratings could result in permanent damage to the device. • Recommended Continuous Operating Limits should be observed for reliable device operation. • Power Dissipation defined as: PTOT ≡ (PDC + PIN) – POUT, where PDC: DC Bias Power PIN: RF Input Power POUT: RF Output Power • This GaAs MMIC is susceptible to damage from Electrostatic Discharge. Proper precautions should be used when handling these devices. Phone: (408) 988-1845 Fax: (408) 970-9950 http:// www.filss.com Revised: 09/07/01 Email: [email protected] LMA411 LOW NOISE PHEMT MMIC • ASSEMBLY DRAWING 50% of Idss BIAS Notes: • Recommended lead bond technique is thermocompression wedge bonding with 0.001” (25µm) diameter wire. The bond tool force shall be 35-38 gram. Bonding stage temperature shall be 230-240°C, heated tool (150-160°C) is recommended. Ultrasonic bonding is not recommended. • The recommended die attach is a eutectic 80/20 Gold/Tin solder, using a stage temperature of 285-290°C. Maximum time at temperature is 1 minute. Use of forming gas (90% N2 , 10% H2 ) for best results. • • Bond on bond or stitch bond acceptable. Conductor over conductor acceptable. Conductors must not short. Phone: (408) 988-1845 Fax: (408) 970-9950 http:// www.filss.com Revised: 09/07/01 Email: [email protected] LMA411 LOW NOISE PHEMT MMIC • ASSEMBLY DRAWING 75% of Idss BIAS Phone: (408) 988-1845 Fax: (408) 970-9950 http:// www.filss.com Revised: 09/07/01 Email: [email protected] LMA411 LOW NOISE PHEMT MMIC • MECHANICAL OUTLINE Notes: • All units are in microns (µm). • All bond pads are 100 X 100 µm2 . • • Unless otherwise specified. • HANDLING PRECAUTIONS To avoid damage to the devices care should be exercised during handling. Proper Electrostatic Discharge (ESD) precautions should be observed at all stages of storage, handling, assembly, and testing. These devices should be treated as Class 1A (0-500 V). Further information on ESD control measures can be found in MIL-STD-1686 and MIL-HDBK-263. All information and specifications are subject to change without notice. Phone: (408) 988-1845 Fax: (408) 970-9950 http:// www.filss.com Revised: 09/07/01 Email: [email protected]