FMA501 Preliminary Data Sheet OC-192 MODULATOR DRIVER AMPLIFIER • FEATURES ♦ ♦ ♦ ♦ ♦ ♦ • DC – 20 GHz Frequency Bandwidth 17dB Small Signal Gain 8 Vpp Output Voltage -12 dB input/output return loss Chip Size: 1.18 x 2.3 mm Minimal Group Delay Variation DESCRIPTION AND APPLICATIONS The Filtronic Solid State FMA501 is a medium power pHEMT amplifier that operates from DC to 20 GHz. This nine-stage travelling wave amplifier provides 17 dB nominal small signal gain and 8 V peak-to-peak NRZ output at bit rates to 12.5 Gb/sec. The FMA501 is designed as the output stage for OC-192 MZ modulator driver amplifiers for optical data communication applications, and can be cascaded with the FMA500 Pre-Driver MMIC to provide 30 dB of voltage gain. • ELECTRICAL SPECIFICATIONS @ TAmbient = 25°C (VDD = +8.0V, VGG = -3.0V; VGC = +1.5V; ZIN = ZOUT = 50Ω) Parameter Symbol 3dB Operating Bandwidth BW 20 GHz Small Signal Gain S21 17 dB Operating Current IOP 220 mA Input Return Loss S11 -12 dB Output Return Loss S22 -12 dB Gain Control GC VGC = 0V to 1.5V 6 dB Group Delay Variation ∆τgrp Over Bandwidth ±20 ps Rise/Fall time, 20%-80% τR/F Output Voltage at Saturation VOUT 10Gb/sec, NRZ, VIN = 2Vpp 8 V Saturated Output Power PSAT VIN = 2Vpp 25.5 dBm Phone: (408) 988-1845 Fax: (408) 970-9950 Test Conditions Min Typ 20 http:// www.filss.com Max 30 Units ps Revised: 3/22/02 Email: [email protected] FMA501 Preliminary Data Sheet OC-192 MODULATOR DRIVER AMPLIFIER • ABSOLUTE MAXIMUM RATINGS Parameter Symbol Test Conditions Drain Voltage VDD Operating Current Min Max Units TAmbient = 22 ± 3 °C 8.5 V IOP TAmbient = 22 ± 3 °C 250 mA RF Input Power PIN TAmbient = 22 ± 3 °C 12 dBm Channel Operating Temperature TCH TAmbient = 22 ± 3 °C 150 ºC Storage Temperature Maximum Assembly Temperature (1 min. max.) TSTG — 165 ºC TMAX — 300 ºC -65 Notes: • Operating conditions that exceed the Absolute Maximum Ratings could result in permanent damage to the device. • Recommended Continuous Operating Limits should be observed for reliable device operation. • This PHEMT is susceptible to damage from Electrostatic Discharge. Proper precautions should be used when handling these devices. • MEASURED PERFORMANCE: 10 Gb/s NRZ Eye Test (VDD = +8.0V, VGG = -3.0V; VGC = +1.5V; ZIN = ZOUT = 50Ω) Phone: (408) 988-1845 Fax: (408) 970-9950 http:// www.filss.com Revised: 3/22/02 Email: [email protected] Preliminary Data Sheet FMA501 OC-192 MODULATOR DRIVER AMPLIFIER • ASSEMBLY DIAGRAM GND Chip capacitor: 100nF VDD=7~8V Inductor for drain = 300uH Gate bias: VGG = -3.0 V Gain control: VGC = 1.5 V Notes: • Apply VGG first, then VGC and VDD. • Disconnect VGC first, then VDD and VGG when turning off. • Recommended lead bond technique is thermocompression wedge bonding with 0.001” (25µm) diameter wire. The bond tool force shall be 35-38 gram. Bonding stage temperature shall be 230-240°C, heated tool (150-160°C) is recommended. Ultrasonic bonding is not recommended. • The recommended die attach is Ablebond silver epoxy, the stabilize bake temperature is set at 150°C for 45 minutes. • Bond on bond or stitch bonds acceptable. • Conductor over conductor acceptable. Conductors must not short. Phone: (408) 988-1845 Fax: (408) 970-9950 http:// www.filss.com Revised: 3/22/02 Email: [email protected] Preliminary Data Sheet FMA501 OC-192 MODULATOR DRIVER AMPLIFIER • MECHANICAL OUTLINE Notes: • All units are in microns (µm). • All pads are 100 X 100 µm2. • HANDLING PRECAUTIONS To avoid damage to the devices care should be exercised during handling. Proper Electrostatic Discharge (ESD) precautions should be observed at all stages of storage, handling, assembly, and testing. These devices should be treated as Class 1A (0-500 V). Further information on ESD control measures can be found in MIL-STD-1686 and MIL-HDBK-263. All information and specifications are subject to change without notice. Phone: (408) 988-1845 Fax: (408) 970-9950 http:// www.filss.com Revised: 3/22/02 Email: [email protected]