LP750P100 PACKAGED 0.5 WATT POWER PHEMT • FEATURES ♦ ♦ ♦ ♦ ♦ • 41 dBm IP3 at 12 GHz 27.5 dBm P-1dB at 12 GHz 10.5 dB Power Gain at 12 GHz 2.5 dB Noise Figure at 12 GHz 60% Power-Added-Efficiency DESCRIPTION AND APPLICATIONS The LP750P100 is a packaged Aluminum Gallium Arsenide/Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam direct-write 0.25 µm Schottky barrier gate. The recessed “mushroom” gate structure minimizes parasitic gate-source and gate resistances. The epitaxial structure and processing have been optimized for reliable high-power/low-noise applications. The LP750 also features Si3 N4 passivation and is available in die form or in surface-mount packages. The LP750P100 is designed for medium-power, linear amplification. This device is suitable for applications in commercial and military environments, and it is appropriate to be used as a medium power transistor in SATCOM uplink transmitters, medium-haul digital radio transmitters, PCS high efficiency amplifiers, and WLL systems. • ELECTRICAL SPECIFICATIONS @ TAmbient = 22 ± 3 °C Parameter Symbol Test Conditions Min Typ Output Power @ 1 dB Compression P1dB f = 12GHz; VDS = 8V; IDS = 50% IDSS 26.0 27.5 dBm Power Gain @ 1 dB Compression G1dB f = 12GHz; VDS = 8V; IDS = 50% IDSS 9.0 10.5 dB Maximum Available Gain MAG f = 12GHz; VDS = 8V; IDS = 50% IDSS 14.0 dB Noise Figure NF f = 12GHz; VDS = 5V; IDS = 33% IDSS 2.5 dB Power-Added Efficiency η f = 12GHz; VDS = 5V; IDS = 50% IDSS; POUT = 25dBm 60 % Output Intercept Point IP3 f = 12GHz; VDS = 8V; IDS = 50% IDSS; POUT = 10dBm 41 dBm Saturated Drain-Source Current IDSS VDS = 2V; VGS = 0V 180 Transconductance GM VDS = 2V; VGS = 0V 230 280 Pinch-Off Voltage VP VDS = 2V; IDS = 4mA -2.0 -1.2 Gate-Drain Breakdown Voltage Magnitude |VBDGD| IGD = 4mA 12 15 V Gate-Source Breakdown Voltage Magnitude |VBDGS| IGS = 4mA 12 16 V Gate-Source Leakage Current Magnitude |IGSL| VGS = -5V Phone: (408) 988-1845 Fax: (408) 970-9950 http:// www.filtronicsolidstate.com Max 265 5 Units mA mS -0.25 45 V µA Revised: 03/02/01 Email: [email protected] LP750P100 PACKAGED 0.5 WATT POWER PHEMT • RECOMMENDED CONTINUOUS OPERATING LIMITS Parameter Symbol Nominal Units Drain-Source Voltage VDS 8 V Gate-Source Voltage VGS -1.2 V Drain-Source Current IDS 0.8 IDSS mA RF Input Power PIN 150 mW Channel Operating Temperature TCH 150 °C Ambient Temperature TSTG -20/50 °C Notes: Device should be operated at or below Recommended Continuous Operating Limits for reliable performance. • ABSOLUTE RATINGS Parameter Symbol Test Conditions Drain-Source Voltage VDS Gate-Source Voltage Min Max Units TAmbient = 22 ± 3 °C 12 V VGS TAmbient = 22 ± 3 °C -4 V Drain-Source Current IDS TAmbient = 22 ± 3 °C 200% IDSS mA Gate Current IG TAmbient = 22 ± 3 °C 35 mA RF Input Power PIN TAmbient = 22 ± 3 °C 250 mW Channel Operating Temperature TCH TAmbient = 22 ± 3 °C 175 ºC Storage Temperature TSTG — 175 ºC -65 Notes: Even temporary operating conditions that exceed the Absolute Maximum Ratings could result in permanent damage to the device. • APPLICATIONS NOTES & DESIGN DATA Applications Notes are available from your local Filtronic Sales Representative or directly from the factory. Complete design data, including S-parameters, noise data, and large-signal models are available on the Filtronic web site. • HANDLING PRECAUTIONS To avoid damage to the devices care should be exercised during handling. Proper Electrostatic Discharge (ESD) precautions should be observed at all stages of storage, handling, assembly and, testing. These devices should be treated as Class 1A (0-500 V). Further information on ESD control measures can be found in MIL-STD-1686 and MIL-HDBK-263. Phone: (408) 988-1845 Fax: (408) 970-9950 http:// www.filtronicsolidstate.com Revised: 03/02/01 Email: [email protected] LP750P100 PACKAGED 0.5 WATT POWER PHEMT • PACKAGE OUTLINE dimensions in mils, tolerance = ± 2 mils All information and specifications are subject to change without notice. Phone: (408) 988-1845 Fax: (408) 970-9950 http:// www.filtronicsolidstate.com Revised: 03/02/01 Email: [email protected]