PRELIMINARY DATA SHEET LPD200MX PACKAGED HIGH DYNAMIC RANGE PHEMT • • FEATURES ♦ 1.0 dB Noise Figure at 1.8 GHz ♦ 15.5 dBm P-1dB 1.8 GHz, 17dBm@6GHz, 10.5dBm@12GHz ♦ 19 dB Power Gain at 1.8 GHz, 10dB@6GHz, 8dB@12GHz ♦ 31 dBm IP3 at 1.8 GHz ♦ 60% Power-Added-Efficiency DESCRIPTION AND APPLICATIONS The LPD200 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam directwrite 0.25 µm by 200 µm Schottky barrier gate. The recessed “mushroom” Ti/Pt/Au gate structure minimizes parasitic gate-source and gate resistances. The epitaxial structure and processing have been optimized for high dynamic range. The LPD200’s active areas are passivated with Si3N4, and the micro X package is ideal for low-cost, high-performance applications that require a surfacemount package. The LPD200MX is designed for commercial systems for use in low noise amplifiers and oscillators operating over the RF and Microwave frequency ranges. The low noise figure makes it appopriate for use in receivers in MMDS and GPS. This device is also suitable as a driver stage for WLAN and ISM band spread spectrum applications. • ELECTRICAL SPECIFICATIONS @ TAmbient = 25°C Parameter Symbol Test Conditions Min Typ Max Units Saturated Drain-Source Current IDSS VDS = 2 V; VGS = 0 V 45 75 mA Power at 1-dB Compression P-1dB f=1.8GHz; VDS = 5 V; IDS = 50% IDSS 14 15.5 dBm Power Gain at 1-dB Compression G-1dB f=1.8GHz; VDS = 5 V; IDS = 50% IDSS 18 19 dB Power-Added Efficiency PAE f=1.8GHz; VDS = 5 V; IDS = 50% IDSS; POUT = 19.5 dBm 60 % Noise Figure NF f=1.8GHz; VDS = 5V; IDS = 50% IDSS 1.4 dB f=1.8GHz; VDS = 3V; IDS = 25% IDSS 1.0 31 dBm 70 mS Output Intercept Point IP3 f=1.8GHz; VDS = 5V; IDS = 50% IDSS; POUT = 4 dBm Transconductance GM VDS = 2 V; VGS = 0 V Gate-Source Leakage Current IGSO VGS = -5 V Pinch-Off Voltage VP VDS = 2 V; IDS = 1 mA -0.25 Gate-Source Breakdown Voltage Magnitude |VBDGS| IGS = 1 mA 6 7 V Gate-Drain Breakdown Voltage Magnitude |VBDGD| IGD = 1 mA 8 9 V Phone: (408) 988-1845 Fax: (408) 970-9950 http:// www.filss.com 50 1 10 µA -1.5 V Revised: 5/02/01 Email: [email protected] PRELIMINARY DATA SHEET LPD200MX PACKAGED HIGH DYNAMIC RANGE PHEMT • ABSOLUTE MAXIMUM RATINGS Parameter Symbol Test Conditions Drain-Source Voltage VDS Gate-Source Voltage Min Max Units TAmbient = 22 ± 3 °C 7 V VGS TAmbient = 22 ± 3 °C -3 V Drain-Source Current IDS TAmbient = 22 ± 3 °C IDSS mA Gate Current IG TAmbient = 22 ± 3 °C 5 mA RF Input Power PIN TAmbient = 22 ± 3 °C 60 mW Channel Operating Temperature TCH TAmbient = 22 ± 3 °C 175 ºC Storage Temperature TSTG — 175 ºC -65 Notes: Even temporary operating condions that exceed the Absolute Maximum Ratings could result in permanent damage to the device. • HANDLING PRECAUTIONS To avoid damage to the devices care should be exercised during handling. Proper Electrostatic Discharge (ESD) precautions should be observed at all stages of storage, handling, assembly, and testing. These devices should be treated as Class 1A (0-500 V). Further information on ESD control measures can be found in MIL-STD-1686 and MIL-HDBK-263. • APPLICATIONS NOTES & DESIGN DATA Applications Notes are available from your local Filtronic Sales Representative or directly from the factory. Complete design data, including S-parameters, noise data, and large-signal models are available on the Filtronic web site. • PACKAGE OUTLINE (dimensions in inches) All information and specifications are subject to change without notice. Phone: (408) 988-1845 Fax: (408) 970-9950 http:// www.filss.com Revised: 5/02/01 Email: [email protected]