1MBC15-060,1MB15D-060, Molded IGBT 600V / 15A Molded Package Features · Small molded package · Low power loss · Soft switching with low switching surge and noise · High reliability, high ruggedness (RBSOA, SCSOA etc.) · Comprehensive line-up Applications · Inverter for Motor drive · AC and DC Servo drive amplifier · Uninterruptible power supply Equivalent Circuit Schematic Maximum ratings and characteristics Absolute maximum ratings (at Tc=25°C unless otherwise specified) 1MBC15-060 / IGBT Item Collector-Emitter voltage Gate-Emitter voltaga Collector DC Tc=25°C current Tc=80°C 1ms Tc=25°C Max. power dissipation(IGBT) Operating temperature Storage temperature Screw torque IGBT Symbol VCES VGES IC25 IC80 Icp PC Tj Tstg - Rating 600 ±20 24 15 96 90 +150 -40 to +150 40 Unit V V A A A W °C °C N·m Symbol VCES VGES IC25 IC100 Icp PC PC Tj Tstg - Rating 600 ±20 33 15 132 120 60 +150 -40 to +150 50 Unit V V A A A W W °C °C N·m C:Collector G:Gate E:Emitter 1MB15D-060 / IGBT+FWD Item Collector-Emitter voltage Gate-Emitter voltaga Collector DC Tc=25°C current Tc=100°C 1ms Tc=25°C Max. power dissipation (IGBT) Max. power dissipation (FWD) Operating temperature Storage temperature Screw torque IGBT + FWD C:Collector G:Gate E:Emitter Molded IGBT 1MBC15-060, 1MB15D-060 Electrical characteristics (at Tj=25°C unless otherwise specified) 1MBC15-060 / IGBT Item Symbol Zero gate voltage collector current Gate-Emitter leakage current Gate-Emitter threshold voltage Collector-Emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Turn-on time Characteristics Min. Typ. ICES – – 5.5 – – – – – – – – IGES VGE(th) VCE(sat) Cies Coes Cres ton tr toff tf Turn-off time – – – – 1000 200 40 – – – – Conditions Unit VGE=0V, VCE=600V VCE=0V, VGE=±20V VCE=20V, IC=15mA VGE=15V, IC=15A VGE=0V VCE=10V f=1MHz VCC=300V IC=15A VGE=±15V RG=160 ohm (Half Bridge) mA µA V V pF Conditions Unit VGE=0V, VCE=600V VCE=0V, VGE=±20V VCE=20V, IC=15mA VGE=15V, IC=15A VGE=0V V CE=10V f=1MHz VCC=300V, I C=15A VGE=±15V RG=160 ohm (Half Bridge) IF=15A, VGE=0V IF=15A, VGE=-10V, di/dt=100A/µs mA µA V V pF Max. 1.0 20 8.5 3.0 – – – 1.2 0.6 1.0 0.35 µs 1MB15D-060 / IGBT+FWD Item Symbol Zero gate voltage collector current Gate-Emitter leakage current Gate-Emitter threshold voltage Collector-Emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Turn-on time Characteristics Min. Typ. ICES – – 5.5 – – – – – – – – – – IGES VGE(th) VCE(sat) Cies Coes Cres ton tr toff tf VF trr Turn-off time FWD forward on voltage Reverse recovery time – – – – 1000 200 40 – – – – – – Max. 1.0 20 8.5 3.0 – – – 1.2 0.6 1.0 0.35 3.0 0.3 µs V µs Thermal resistance characteristics 1MBC15-060 / IGBT Item Thermal resistance Symbol Rth(j-c) Characteristics Min. Typ. – – Conditions Unit Max. 1.38 IGBT °C/W 1MB15D-060 / IGBT+FWD Item Thermal resistance Symbol Rth(j-c) Rth(j-c) Characteristics Min. Typ. – – – – Conditions Unit Max. 1.04 2.08 IGBT FWD Outline drawings, mm 1MBC15-060 1MB15D-060 TO-220AB TO-3P °C/W °C/W 1MBC15-060, 1MB15D-060 Molded IGBT Characteristics 1MBC15-060,1MB15D-060 Collector current vs. Collector-Emitter voltage Tj=125°C 50 50 40 40 Collector current : Ic [A] Collector current : Ic [A] Collector current vs. Collector-Emitter voltage Tj=25°C 30 20 30 20 10 10 0 0 0 1 2 3 4 5 0 1 Collector-Emitter voltage : VCE [V] 2 Collector-Emitter vs. Gate-Emitter voltage 5 Tj=125°C 10 10 Collector-Emitter voltage : VCE [V] Collector-Emitter voltage : VCE [V] 4 Collector-Emitter vs. Gate-Emitter voltage Tj=25°C 8 6 4 2 0 8 6 4 2 0 0 5 10 15 20 0 5 Gate-Emitter voltage : VGE [V] 10 15 20 Gate-Emitter voltage : VGE [V] Switching time vs. Collector current Vcc=300V, RG=160 ohm, VGE=±15V, Tj=25°C Switching time vs. Collector current Vcc=300V, RG=160 ohm, VGE=±15V, Tj=125°C 1000 1000 Switching time : ton, tr, toff, tf [n sec.] Switching time : ton, tr, toff, tf [n sec.] 3 Collector-Emitter voltage : VCE [V] 100 100 10 10 0 5 10 15 Collector current : Ic [A] 20 25 30 0 5 10 15 20 Collector current : Ic [A] 25 30 IGBT Module 1MBC15-060, 1MB15D-060 Characteristics 1MBC15-060,1MB15D-060 Switching time vs. RG Vcc=300V, Ic=15A, VGE=±15V, Tj=125°C Switching time : ton, tr, toff, tf [n sec.] Switching time : ton, tr, toff, tf [n sec.] Switching time vs. RG Vcc=300V, Ic=15A, VGE=±15V, Tj=25°C 1000 100 1000 100 10 10 0 100 200 300 400 500 600 700 0 800 100 200 Dynamic input characteristics 500 600 700 800 Tj=25°C 25 20 300 15 200 10 100 5 1000 Capacitance : Cies, Coes, Cres [nF] 400 Gate-Emitter voltage : VGE [V] Collector-Emitter voltage : VCE [V] 400 Capacitance vs. Collector-Emitter voltage Tj=25°C 500 300 Gate resistance : RG [ohm] Gate resistance : RG [ohm] 100 10 0 0 0 35 10 20 30 40 50 Gate charge : Qg [nC] 60 70 0 80 5 10 15 20 25 Collector-Emitter voltage : VCE [V] 30 35 Typical short circuit capability Vcc=400V, RG=160 ohm, Tj=125°C Reversed biased safe operating area < +VGE=15V, -VGE = 15V, Tj < = 125°C, RG > = 160 ohm 250 100 200 80 150 60 100 40 50 20 25 20 15 10 5 0 0 0 100 200 300 400 500 Collector-Emitter voltage : VCE [V] 600 700 0 5 10 15 Gate voltage : VGE [V] 20 25 Short circuit time : tsc [µs] Short circuit time current : Isc [A] Collector current : Ic [A] 30 1MBC15-060, 1MB15D-060 IGBT Module Characteristics 1MBC15-060,1MB15D-060 Thermal resistance : Rth (j-c) [°C/W] Transient thermal resistance 101 100 10-1 10-2 10-4 10-3 10-2 10-1 100 Pulse width : PW [sec.] 1MB15D-060 Reverse recovery time vs. Forward current Reverse recovery current vs. Forward current -di/dt=45A / µsec -di/dt=45A / µsec 4 500 3 reverse recovery current : Irr [A] reverse recovery time : trr [nsec] 400 300 200 100 2 1 0 0 0 5 10 15 20 0 25 5 Forward current : IF [A] 10 15 20 25 Forward current : IF [A] Reverse recovery time characteristics vs. -di/dt IF=15A, Tj=125°C Forward current vs. Foeward voltage 500 10 400 8 300 6 200 4 100 2 50 Forward current : IF [A] 30 20 10 0 0 0 0.5 1.0 1.5 2.0 2.5 Forward voltage : VF [V] 3.0 3.5 4.0 0 0 50 100 150 -di/dt 200 [ A / µsec ] 250 300 reverse recovery current : Irr [A] reverse recovery time : trr [nsec] 40