FUJI 1MBI600NN-060

n Outline Drawing
IGBT MODULE ( N series )
n Features
• Square RBSOA
• Low Saturation Voltage
• Less Total Power Dissipation
• Improved FWD Characteristic
• Minimized Internal Stray Inductance
• Overcurrent Limiting Function (~3 Times Rated Current)
n Applications
• High Power Switching
• A.C. Motor Controls
• D.C. Motor Controls
• Uninterruptible Power Supply
n Maximum Ratings and Characteristics
n Equivalent Circuit
• Absolute Maximum Ratings
Items
Collector-Emitter Voltage
Gate -Emitter Voltage
Collector
Current
Max. Power Dissipation
Operating Temperature
Storage Temperature
Isolation Voltage
Screw Torque
( Tc=25°C)
Symbols
VCES
VGES
Continuous
IC
1ms
IC PULSE
Continuous
-IC
1ms
-IC PULSE
PC
Tj
Tstg
A.C. 1min.
Vis
Mounting *1
Terminals *2
Terminals *3
Ratings
600
± 20
600
1200
600
1200
2000
+150
-40 ∼ +125
2500
3.5
4.5
1.7
Units
V
V
A
W
°C
°C
V
Nm
Note: *1:Recommendable Value; 2.5 ∼ 3.5 Nm (M5) or (M6)
*2:Recommendable Value; 3.5 ∼ 4.5 Nm (M6)
*3:Recommendable Value; 1.3 ∼ 1.7 Nm (M4)
• Electrical Characteristics
Items
Zero Gate Voltage Collector Current
Gate-Emitter Leackage Current
Gate-Emitter Threshold Voltage
Collector-Emitter Saturation Voltage
Input capacitance
Output capacitance
Reverse Transfer capacitance
Turn-on Time
Turn-off Time
Diode Forward On-Voltage
Reverse Recovery Time
( at Tj=25°C )
Symbols
ICES
IGES
VGE(th)
VCE(sat)
Cies
Coes
Cres
tON
tr
tOFF
tf
VF
trr
Test Conditions
VGE=0V VCE=600V
VCE=0V VGE=± 20V
VGE=20V IC=600mA
VGE=15V IC=600A
VGE=0V
VCE=10V
f=1MHz
VCC=300V
IC=600A
VGE=± 15V
RG=2.7Ω
IF=600A VGE=0V
IF=600A
Min.
Symbols
Rth(j-c)
Rth(j-c)
Rth(c-f)
Test Conditions
IGBT
Diode
With Thermal Compound
Min.
Typ.
4.5
39600
8800
4000
0.6
0.2
0.6
0.2
Max.
4.0
60
7.5
2.8
Units
mA
µA
V
V
pF
1.2
0.6
1.0
0.35
3.0
300
µs
V
ns
• Thermal Characteristics
Items
Thermal Resistance
Typ.
0.0125
Max.
0.063
0.11
Units
°C/W
Collector current vs. Collector-Emitter voltage
Collector current vs. Collector-Emitter voltage
T j=25°C
T j=125°C
1400
1400
V GE =20V,15V,12V,
V GE =20V,15V,12V
1200
C
1000
10V
800
600
400
Collector current : I
Collector current : I
C
[A]
[A]
1200
1000
10V
800
600
400
200
200
8V
8V
0
0
0
1
2
3
4
5
0
3
4
Collector-Emitter vs. Gate-Emitter voltage
T j=25°C
T j=125°C
CE
[V]
[V]
10
Collector-Emitter voltage V
8
6
IC=
4
1200A
600A
2
300A
0
8
6
IC=
4
1200A
600A
2
300A
0
0
5
10
15
20
25
0
5
Gate-Emitter voltage : V GE [V]
10
15
20
25
Gate-Emitter voltage : V GE [V]
Switching time vs. Collector current
Switching time vs. Collector current
V CC =300V, R G =2.7 Ω , V GE ±15V, T j=25°C
V CC =300V, R G =2.7 Ω , V GE =±15V, Tj=125°C
1000
1000
t off
on, t r, t off, t f
tr
tf
Switching time : t
100
10
t on
[nsec]
t off
tr
on, t r, t off, t f
[nsec]
t on
Switching time : t
5
Collector-Emitter vs. Gate-Emitter voltage
10
CE
2
Collector-Emitter voltage : V CE [V]
Collector-Emitter voltage : V CE [V]
Collector-Emitter voltage :V
1
tf
100
10
0
200
400
600
800
Collector current : I C [A]
1000
0
200
400
600
800
Collector current : I C [A]
1000
Switching time vs. R G
Dynamic input characteristics
T j= 2 5 ° C
V CC =300V, I C = 6 0 0 A , V GE = ± 1 5 V , T j = 2 5 ° C
25
V CC = 2 0 0 V
300V
[V]
ton
toff
tf
100
[V]
tr
20
300
15
200
10
100
5
Gate-Emitter Voltage : V
400
CE
400V
GE
1000
Collector-Emitter voltage : V
Switching time : t
on, t r, t off, t f [nsec]
500
10
0
0
1
10
0
500
1000
Gate resistance : R G [ Ω ]
1500
2000
2500
3000
G a t e c h a r g e : Q G [nC]
Forward current vs. Forward voltage
Reverse recovery characteristics
V GE = O V
t rr, I rr vs. I F
1400
I rr 1 2 5 ° C
rr
1000
600
400
200
Reverse recovery time
800
I rr 2 5 ° C
t rr 1 2 5 ° C
:t
Reverse recovery current : I
F
[A]
[A]
1200
[nsec]
25°C
rr
T j= 1 2 5 ° C
Forward current : I
3500
100
t rr 2 5 ° C
0
0
1
2
3
4
0
200
400
600
800
1000
Forward current : I F [A]
Forward voltage : V F [V]
Reversed biased safe operating area
+ V GE = 1 5 V , - V GE < 1 5 V , T j < 1 2 5 ° C , R G > 2.7 Ω
Transient thermal resistance
6000
5000
Thermal resistance : R
Collector current : I
C
[A]
0,1
th(j-c)
[°C/W]
Diode
IGBT
0,01
4000
SCSOA
(non-repetitive pulse)
3000
2000
1000
RBSOA (Repetitive pulse)
0
0,001
0,01
0,1
Pulse width : PW [sec]
1
0
100
200
300
400
500
Collector-Emitter voltage : V C E [V]
600
Switching loss vs. Collector current
Capacitance vs. Collector-Emitter voltage
V CC=300V, R G =2.7 Ω , V GE =±15V
T j=25°C
30
E on 125°C
E on 25°C
20
10
E rr 125°C
, C oes , C res [nF]
E off 25°C
ies
40
C ies
10
Capacitance : C
Switching loss : E
100
E off 125°C
50
on
, E off , E rr [mJ/cycle]
60
E rr 25°C
C oes
C res
1
0
0
200
400
600
800
1000
0
Collector Current : I C [A]
Fuji Electric GmbH
Fuji Electric (UK) Ltd.
Lyoner Straße 26
Commonwealth House
2 Chalkhill Road Hammersmith
D-60528 Frankfurt/M
London W6 8DW, UK
Tel.: 069 - 66 90 29 - 0
Fax.: 069 - 66 90 29 - 56
Tel.: 0181 - 233 11 30
Fax.: 0181 - 233 11 60
5
10
15
20
25
30
Collector-Emitter Voltage : V CE [V]
P.O. Box 702708-Dallas, TX 75370 Phone (972) 233-1589 Fax (972) 233-0481 www.collmer.com
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