2SK2642-01MR FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET Features TO-220F15 High speed switching Low on-resistance No secondary breakdown Low driving power High voltage VGS=±35V Guarantee Avalanche-proof 2.54 Applications Switching regulators UPS DC-DC converters General purpose power amplifier 3. Source Equivalent circuit schematic Drain(D) Maximum ratings and characteristicAbsolute maximum ratings (Tc=25°C unless otherwise specified) Item Drain-source voltage Continuous drain current Pulsed drain current Gate-source voltage Maximum Avalanche Energy Max. power dissipation Operating and storage temperature range Symbol V DS ID ID(puls] VGS EAV *1 PD Tch Tstg Rating 500 ±15 ±60 ±35 88.7 50 +150 -55 to +150 Unit V A A V mJ W °C °C Gate(G) Source(S) *1 L=0.72mH, Vcc=50V Electrical characteristics (Tc =25°C unless otherwise specified) Item Drain-source breakdown voltaget Gate threshold voltage Symbol V(BR)DSS VGS(th) Zero gate voltage drain current IDSS Gate-source leakage current Drain-source on-state resistance Forward transcondutance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time ton IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf IAV V SD trr Qrr Turn-off time toff Avalanche capability Diode forward on-voltage Reverse recovery time Reverse recovery charge Min. Test Conditions ID=1mA VGS=0V ID=1mA VDS=VGS VDS=500V VGS=0V VGS=±35V VDS=0V ID=7.5A VGS=10V 500 3.5 Tch=25°C Tch=125°C ID=7.5A VDS=25V VDS =25V VGS=0V f=1MHz 4.5 VCC=300V ID=15A VGS=10V RGS=10 Ω L=100µH Tch=25°C IF=2xID VGS=0V Tch=25°C IF=ID VGS=0V -di/dt=100A/µs Tch=25°C Typ. Max. Units 4.0 4.5 10 500 0.2 1.0 10 100 0.44 0.55 9.0 1400 2100 250 380 110 170 30 50 110 170 90 140 55 90 15 1.1 500 8.0 1.65 V V µA mA nA Ω S pF ns A V ns µC Thermalcharacteristics Item Thermal resistance Symbol Rth(ch-c) Rth(ch-a) Test Conditions channel to case channel to ambient Min. Typ. Max. 2.50 62.5 Units °C/W °C/W 1 2SK2642-01MR FUJI POWER MOSFET Characteristics Typical output characteristics Drain-source on-state resistance RDS(on)=f(Tch):ID=7.5A,VGS=10V o ID=f(VDS):80µs pulse test,Tc=25 C 2.0 40 VGS=20V 35 10V 1.5 30 8V RDS(on) [ Ω ] ID [A] 25 20 7V 15 1.0 max. typ. 6.5V 10 0.5 6V 5 5.5V 0.0 5V 0 0 5 10 15 20 25 30 -50 35 0 50 VDS [V] 150 Typical drain-source on-state resistance Typical transfer characteristic o RDS(on)=f(ID):80 µs pulse test, Tc=25 C o ID=f(VGS):80µs pulse test,VDS=25V,Tch=25 C 4.0 VGS= 5V 3.5 10 100 o Tch [ C] 5.5V 6.5V 6V 7V 1 3.0 10 RDS(on) [ Ω] ID [A] 2.5 0 2.0 1.5 -1 10 1.0 0.5 0.0 -2 10 0 1 2 3 4 5 6 7 8 9 10 0 5 10 VGS [ V ] 15 20 25 ID [ A ] Typical forward transconductance Gate threshold voltage VGS(th)=f(Tch):ID=1mA,VDS=VGS o gfs=f(ID):80 µs pulse test,VDS=25V,Tch=25 C 6.0 5.0 1 10 max. gfs [s] VGS(th) [V] 4.0 typ. min. 3.0 0 10 2.0 1.0 -1 10 10-1 0.0 0 1 10 10 ID [A] -50 0 50 100 150 o Tch [ C ] 2 2SK2642-01MR FUJI POWER MOSFET Typical gate charge characteristic Typical capacitances C=f(VDS):VGS=0V,f=1MHz o VGS=f(Qg):ID=15A,Tc=25 C 40 400 10n Vcc=400V 0V 35 10 c= V Vc 250 V 0 40 30 350 300 Ciss C [F] 250 250V 25 200 20 150 15 VGS [V] VDS [V] 1n Coss 100p Crss 100V 100 10 5 50 0 10p -2 10 10 -1 10 0 1 2 10 10 0 20 40 60 80 100 120 140 160 0 180 Qg [nC] VDS [V] Forward characteristic of reverse of diode IF=f(VSD):80 µs pules test,VGS=0V Power Dissipation PD=f(Tc) 70 60 1 10 o 50 40 0 10 PD [W] IF [A] Tch=25 C typ. 30 20 -1 10 10 -2 10 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 1.4 0 50 100 150 o Tc [ C ] VSD [V] Safe operating area o ID=f(VDS):D=0.01,Tc=25 C Transient thermal impedande Zthch=f(t) parameter:D=t/T 10 2 10 1 1 t=0.01µs 10 DC 1µs 0.5 10 10µs 0 100µs ID [A] Zthch-c [K/W] 0.2 0.1 0 10 1ms 0.05 -1 10 10ms 0.02 10 -1 100ms 0.01 0 -2 10 -5 10 10 -4 10 -3 -2 10 t [s] -1 10 0 10 10 1 10 -2 10 0 1 10 2 10 10 3 VDS [V] 3 2SK2642-01MR FUJI POWER MOSFET Avalanche energy derating Eas=f(starting Tch):Vcc=50V,IAV=15A 100 80 Eas [mJ] 60 40 20 0 0 50 100 150 o Starting Tch [ C ] 4