7MBR35UA120 IGBT Modules IGBT MODULE (U series) 1200V / 35A / PIM Features · Low VCE(sat) · Compact Package · P.C. Board Mount Module · Converter Diode Bridge Dynamic Brake Circuit Applications · Inverter for Motoe Drive · AC and DC Servo Drive Amplifier · Uninterruptible Power Supply Maximum ratings and characteristics Absolute maximum ratings (Tc=25°C unless otherwise specified) Item Symbol Inverter Collector-Emitter voltage Gate-Emitter voltage Continuous ICP 1ms Collector current Brake Collector power disspation Collector-Emitter voltage Gate-Emitter voltage Collector current -IC -IC pulse PC VCES VGES IC ICP Collector power disspation Repetitive peak reverse voltage Repetitive peak reverse voltage Average output current Surge current (Non-Repetitive) I2t (Non-Repetitive) PC V RRM V RRM IO IFSM I2t Tj Operating junction temperature Tstg Storage temperature Isolation between terminal and copper base *2 Viso voltage between thermistor and others *3 Mounting screw torque Converter Condition VCES VGES IC Rating Tc=25°C Tc=80°C Tc=25°C Tc=80°C 1ms 1 device Continuous 1ms Tc=25°C Tc=80°C Tc=25°C Tc=80°C 1 device 50Hz/60Hz sine wave Tj=150°C, 10ms half sine wave AC : 1 minute *1 Recommendable value : 2.5 to 3.5 N·m (M5) *2 All terminals should be connected together when isolation test will be done. *3 Two thermistor terminals should be connected together, each other terminals should be connected together and shorted to base plate when isolation test will be done. 1200 ±20 35 25 70 50 35 70 160 1200 ±20 25 15 50 30 115 1200 1600 35 260 338 +150 -40 to +125 AC 2500 AC 2500 3.5 *1 Unit V V A W V V A W V V A A A 2s °C °C V N·m 7MBR35UA120 IGBT Module Electrical characteristics (Tj=25°C unless otherwise specified) Item Symbol Reverse current Forward on voltage ICES IGES VGE(th) VCE(sat) (terminal) VCE(sat) (chip) Cies ton tr tr(i) toff tf VF (terminal) VF (chip) trr ICES IGES VCE(sat) (terminal) VCE(sat) (chip) ton tr toff tf IRRM V FM Reverse current Resistance IRRM R B value B Inverter Zero gate voltage collector current Gate-Emitter leakage current Gate-Emitter threshold voltage Collector-Emitter saturation voltage Input capacitance Turn-on time Turn-off time Forward on voltage Brake Reverse recovery time Zero gate voltage collector current Gate-Emitter leakage current Collector-Emitter saturation voltage Turn-on time Converter Turn-off time Thermistor Condition VCE=1200V, VGE=0V VCE=0V, VGE=±20V VCE=20V, IC=35mA Tj=25°C VGE=15V Tj=125°C Ic=35A Tj=25°C Tj=125°C VGE=0V, VCE=10V, f=1MHz V CC=600V IC=35A VGE=±15V RG= 43 Ω Tj=25°C Tj=125°C Tj=25°C Tj=125°C VGE= 0 V IF=35A IF=35A VCE=1200V, VGE=0V VCE=0V, VGE=±20V Tj=25°C IC=25A Tj=125°C VGE=15V Tj=25°C Tj=125°C V CC=600V IC=25A VGE=±15V RG= 68 Ω V R=1200V IF=35 A VGE=0V V R=1600V T=25°C T=100°C T=25/50°C terminal chip Characteristics Typ. Max. 1.0 200 6.5 8.5 2.25 2.70 2.60 1.95 2.40 2.30 3 0.53 1.20 0.43 0.60 0.03 0.37 1.00 0.07 0.30 2.05 2.40 2.20 1.75 2.10 1.90 0.35 1.0 200 2.40 2.90 2.85 2.10 2.60 2.55 0.53 1.20 0.43 0.60 0.37 1.00 0.07 0.30 1.0 1.35 1.70 1.25 1.0 5000 495 520 3375 3450 Unit Min. 4.5 465 3305 Characteristics Typ. Max. Unit Min. mA nA V V nF µs V µs mA nA V µs mA V mA Ω K Thermal resistance Characteristics Item Symbol Thermal resistance ( 1 device ) Rth(j-c) Contact thermal resistance Rth(c-f) * Condition Inverter IGBT Inverter FWD Brake IGBT Converter Diode With thermal compound - 0.05 0.76 1.19 1.07 0.90 - * This is the value which is defined mounting on the additional cooling fin with thermal compound Equivalent Circuit Schematic [Converter] 21(P) [Brake] [Thermistor] [Inverter] 22(P1) 8 20(Gu) 1(R) 2(S) 3(T) 18(Gv) 19(Eu) 7(B) 14(Gb) 15(Ew) 17(Ev) 4(U) 13(Gx) 16(Gw) 5(V) 12(Gy) 6(W) 11(Gz) 10(En) 23(N) 24(N1) 9 °C/W 7MBR35UA120 IGBT Module Characteristics (Representative) [ Inverter ] Collector current vs. Collector-Emitter voltage (typ.) [ Inverter ] Collector current vs. Collector-Emitter voltage (typ.) Tj= 25°C / chip Tj= 125°C / chip 60 60 VGE=20V 15V 12V Collector current : Ic [A] Collector current : Ic [A] VGE=20V 50 50 40 30 10V 20 15V 12V 40 30 10V 20 10 10 8V 8V 0 0 0 1 2 3 4 Collector-Emitter voltage : VCE [V] 0 5 1 2 [ Inverter ] 4 5 [ Inverter ] Collector current vs. Collector-Emitter voltage (typ.) Collector-Emitter voltage vs. Gate-Emitter voltage (typ.) VGE=15V / chip Tj=25°C / chip 10 60 Collector - Emitter voltage : VCE [ V ] Tj=25°C 50 Collector current : Ic [A] 3 Collector-Emitter voltage : VCE [V] Tj=125°C 40 30 20 10 8 6 4 Ic=50A Ic=25A Ic= 12.5A 2 0 0 0 1 2 3 4 5 5 Collector-Emitter voltage : VCE [V] 10 15 20 25 Gate - Emitter voltage : VGE [ V ] [ Inverter ] [ Inverter ] Capacitance vs. Collector-Emitter voltage (typ.) Dynamic Gate charge (typ.) VGE=0V, f= 1MHz, Tj= 25°C Vcc=600V, Ic=35A, Tj= 25°C Collector-Emitter voltage : VCE [ 200V/div ] Gate - Emitter voltage : VGE [ 5V/div ] Capacitance : Cies, Coes, Cres [ nF ] 10.0 Cies 1.0 Coes Cres VGE VCE 0 0.1 0 10 20 Collector-Emitter voltage : VCE [V] 30 0 30 60 90 Gate charge : Qg [ nC ] 120 150 IGBT Module 7MBR35UA120 [ Inverter ] Switching time vs. Collector current (typ.) [ Inverter ] Switching time vs. Collector current (typ.) Vcc=600V, VGE=±15V, Rg=43Ω, Tj= 25°C Vcc=600V, VGE=±15V, Rg=43Ω, Tj=125°C 10000 Switching time : ton, tr, toff, tf [ nsec ] Switching time : ton, tr, toff, tf [ nsec ] 10000 1000 ton tr toff 100 tf 1000 toff ton tr 100 tf 10 10 0 10 20 30 40 0 50 10 Collector current : Ic [ A ] 20 [ Inverter ] 50 [ Inverter ] Switching loss vs. Collector current (typ.) Vcc=600V, Ic=35A, VGE=±15V, Tj= 25°C Vcc=600V, VGE=±15V, Rg=43Ω 14 Switching loss : Eon, Eoff, Err [ mJ/pulse ] Switching time : ton, tr, toff, tf [ nsec ] 40 Switching time vs. Gate resistance (typ.) 10000 tr ton toff 1000 100 tf 12 Eon(125°C) 10 Eon(25°C) 8 6 Eoff(125°C) 4 Eoff(25°C) Err(125°C) Err(25°C) 2 10 0 10.0 100.0 1000.0 0 10 20 Gate resistance : Rg [ Ω ] 30 40 50 [ Inverter ] Switching loss vs. Gate resistance (typ.) Reverse bias safe operating area (max.) Vcc=600V, Ic=35A, VGE=±15V, Tj= 125°C +VGE=15V,-VGE <= 15V, RG >= 43Ω ,Tj <= 125°C 20 80 Eon Collector current : Ic [ A ] 15 10 Eoff 5 60 40 20 Err 0 0 10.0 60 Collector current : Ic [ A ] [ Inverter ] Switching loss : Eon, Eoff, Err [ mJ/pulse ] 30 Collector current : Ic [ A ] 100.0 Gate resistance : Rg [ Ω ] 1000.0 0 400 800 1200 Collector - Emitter voltage : VCE [ V ] IGBT Module 7MBR35UA120 [ Inverter ] [ Inverter ] Forward current vs. Forward on voltage (ty p.) Reverse recovery characteristics (ty p.) chip Vcc=600V, VGE=±15V, Rg=43Ω 60 1000 T j=25°C Reverse recovery current : Irr [ A ] Reverse recovery time : trr [ nsec ] Forward current : IF [ A ] 50 T j=125°C 40 30 20 10 trr (125°C) trr (25°C) 100 Irr (125°C) Irr (25°C) 10 0 0 1 2 3 0 4 10 Forward on voltage : VF [ V ] 20 30 40 50 Forward current : IF [ A ] [ Converter ] Forward current vs. Forward on voltage (ty p.) chip 60 50 Forward current : IF [ A ] T j=25°C T j=125°C 40 30 20 10 0 0.0 0.5 1.0 1.5 2.0 Forward on voltage : VFM [ V ] [ Thermistor ] Temperature characteristic (typ .) Transient thermal resistance (max.) 100 FWD[Inverter] IGBT[Brake] Resistance : R [ kΩ ] Thermal resistanse : Rth(j-c) [ °C/W ] 10.000 1.000 Conv.Diode IGBT[Inverter] 0.100 0.010 0.001 0.010 0.100 Pulse width : P w [ sec ] 1.000 10 1 0.1 -60 -40 -20 0 20 40 60 80 100 Temperature [°C ] 120 140 160 180 7MBR35UA120 IGBT Module [ Brake ] [ Brake ] Collector current vs. Collector-Emitter voltage (typ.) Collector current vs. Collector-Emitter voltage (typ.) Tj= 25°C / chip Tj= 125°C / chip 40 40 15V VGE=20V 15V 12V 20 10V 12V 30 Collector current : Ic [A] Collector current : Ic [A] VGE=20V 30 20 10V 10 10 8V 8V 0 0 0 1 2 3 4 0 5 Collector-Emitter voltage : VCE [V] 1 2 [ Brake ] 4 5 [ Brake ] Collector current vs. Collector-Emitter voltage (typ.) VGE=15V / chip Collector-Emitter voltage vs. Gate-Emitter voltage (typ.) Tj=25°C / chip 40 10 Collector - Emitter voltage : VCE [ V ] Collector current : Ic [A] 3 Collector-Emitter voltage : VCE [V] Tj=25°C 30 Tj=125°C 20 10 8 6 4 Ic=30A Ic=15A Ic=7.5A 2 0 0 0 1 2 3 4 5 5 10 15 20 25 Gate - Emitter voltage : VGE [ V ] Collector-Emitter voltage : VCE [V] [ Brake ] Capacitance vs. Collector-Emitter voltage (typ.) [ Brake ] Dynamic Gate charge (typ.) Vcc=600V, Ic=25A, Tj= 25°C VGE=0V, f= 1MHz, Tj= 25°C Collector-Emitter voltage : VCE [ 200V/div ] Gate - Emitter voltage : VGE [ 5V/div ] Capacitance : Cies, Coes, Cres [ nF ] 10.0 Cies 1.0 Coes Cres VGE VCE 0 0.1 0 10 20 Collector-Emitter voltage : VCE [V] 30 0 30 60 Gate charge : Qg [ nC ] 90 IGBT Module Outline Drawings, mm 7MBR35UA120