7MBR100U2B060 IGBT Modules IGBT MODULE (U series) 600V / 100A / PIM Features · Low VCE(sat) · Compact Package · P.C. Board Mount Module · Converter Diode Bridge Dynamic Brake Circuit Applications · Inverter for Motoe Drive · AC and DC Servo Drive Amplifier · Uninterruptible Power Supply Maximum ratings and characteristics Absolute maximum ratings (Tc=25°C unless otherwise specified) Item Symbol Condition Collector-Emitter voltage Gate-Emitter voltage Converter Brake Inverter VCES VGES IC Collector current ICP -IC -IC pulse Collector power disspation PC Collector-Emitter voltage VCES Gate-Emitter voltage VGES Collector current IC ICP Collector power disspation PC Repetitive peak reverse voltage V RRM Repetitive peak reverse voltage V RRM Average output current IO Surge current (Non-Repetitive) IFSM I2t (Non-Repetitive) I2t Tj Operating junction temperature Tstg Storage temperature Isolation between terminal and copper base *2 Viso voltage between thermistor and others *3 Mounting screw torque Continuous 1ms 1ms 1 device Continuous 1ms 1 device 50Hz/60Hz sine wave Tj=150°C, 10ms half sine wave AC : 1 minute *1 Recommendable value : 2.5 to 3.5 N·m (M5) *2 All terminals should be connected together when isolation test will be done. *3 Two thermistor terminals should be connected together, each other terminals should be connected together and shorted to base plate when isolation test will be done. Rating 600 ±20 100 200 100 200 378 600 ±20 50 100 187 600 800 100 700 2450 +150 -40 to +125 AC 2500 AC 2500 3.5 *1 Unit V V A A A W V V A A W V V A A A 2s °C °C V V N·m 7MBR100U2B060 IGBT Module Electrical characteristics (Tj=25°C unless otherwise specified) Item Symbol Condition Characteristics Typ. Max. 1.0 200 6.2 6.7 7.7 2.30 2.60 2.50 1.85 2.00 8.4 0.51 1.20 0.22 0.60 0.16 0.58 1.20 0.07 0.45 2.10 2.40 2.40 1.60 1.65 0.35 1.0 200 2.10 2.40 2.40 1.85 2.15 0.42 1.20 0.24 0.60 0.42 1.20 0.03 0.45 1.0 1.20 1.50 1.10 1.0 5000 465 495 520 3305 3375 3450 Unit Min. Reverse current Forward on voltage ICES IGES VGE(th) VCE(sat) (terminal) VCE(sat) (chip) Cies ton tr tr(i) toff tf VF (terminal) VF (chip) trr ICES IGES VCE(sat) (terminal) VCE(sat) (chip) ton tr toff tf IRRM V FM Reverse current Resistance IRRM R B value B Inverter Zero gate voltage collector current Gate-Emitter leakage current Gate-Emitter threshold voltage Collector-Emitter saturation voltage Input capacitance Turn-on time Turn-off time Forward on voltage Brake Reverse recovery time Zero gate voltage collector current Gate-Emitter leakage current Collector-Emitter saturation voltage Turn-on time Thermistor Converter Turn-off time VCE=600V, VGE=0V VCE=0V, VGE=±20V VCE=20V, IC=100mA Tj=25°C VGE=15V Tj=125°C Ic=100A Tj=25°C Tj=125°C VGE=0V, VCE=10V, f=1MHz V CC=300V IC=100A VGE=±15V RG=33Ω Tj=25°C Tj=125°C Tj=25°C Tj=125°C VGE=0V IF=100A IF=100A VCE=600V, VGE=0V VCE=0V, VGE=±20V Tj=25°C IC=50A Tj=125°C VGE=15V Tj=25°C Tj=125°C V CC=300V IC=50A VGE=±15V RG=68Ω V R=600V IF=100A VGE=0V V R=800V T=25°C T=100°C T=25/50°C terminal chip mA nA V V nF µs V µs mA nA V µs mA V mA Ω K Thermal resistance Characteristics Item Symbol Condition Min. Thermal resistance ( 1 device ) Contact thermal resistance Inverter IGBT Inverter FWD Brake IGBT Converter Diode With thermal compound Rth(j-c) * Characteristics Typ. Max. Rth(c-f) 0.33 0.67 0.67 0.47 0.05 * This is the value which is defined mounting on the additional cooling fin with thermal compound Equivalent Circuit Schematic [Converter] 21(P) [Brake] [Thermistor] [Inverter] 22(P1) 8 20(Gu) 1(R) 2(S) 3(T) 18(Gv) 19(Eu) 7(B) 14(Gb) 15(Ew) 17(Ev) 4(U) 13(Gx) 16(Gw) 5(V) 12(Gy) 6(W) 11(Gz) 10(En) 23(N) 24(N1) 9 Unit °C/W 7MBR100U2B060 IGBT Module Characteristics (Representative) [ Inverter ] [ Inverter ] Collector current vs. Collector-Emitter voltage (typ.) Collector current vs. Collector-Emitter voltage (typ.) Tj= 25°C / chip Tj= 125°C / chip 250 250 VGE=20V 15V 12V VGE=20V 15V 12V 200 Collector current : Ic [A] Collector current : Ic [A] 200 10 150 100 10V 150 100 8V 50 50 8V 0 0 0 1 2 3 4 0 5 1 Collector-Emitter voltage : VCE [V] [ Inverter ] Collector current vs. Collector-Emitter voltage (typ.) 4 5 Tj=25°C / chip 10 Tj=25°C 200 Collector - Emitter voltage : VCE [ V ] 250 Tj=125°C 150 100 50 0 8 6 4 Ic=200A Ic=100A Ic= 50A 2 0 2 3 4 5 10 15 20 25 Gate - Emitter voltage : VGE [ V ] Collector-Emitter voltage : VCE [V] [ Inverter ] [ Inverter ] Dynamic Gate charge (typ.) Capacitance vs. Collector-Emitter voltage (typ.) VGE=0V, f= 1MHz, Tj= 25°C Vcc=300V, Ic=100A, Tj= 25°C Collector-Emitter voltage : VCE [ V ] 100.00 Cies 10.00 Coes 1.00 Cres 500 25 400 20 300 15 VGE 200 10 100 5 VCE 0 0.10 0 10 20 Collector-Emitter voltage : VCE [V] 30 0 0 100 200 300 400 Gate charge : Qg [ nC ] 500 [V] 1 Gate - Emitter voltage : VGE 0 Capacitance : Cies, Coes, Cres [ nF ] 3 [ Inverter ] Collector-Emitter voltage vs. Gate-Emitter voltage (typ.) VGE=15V / chip Collector current : Ic [A] 2 Collector-Emitter voltage : VCE [V] IGBT Module 7MBR100U2B060 [ Inverter ] [ Inverter ] Switching time vs. Collector current (typ.) Switching time vs. Collector current (typ.) Vcc=300V, VGE=±15V, Rg=33Ω, Tj= 25°C Vcc=300V, VGE=±15V, Rg=33Ω, Tj=125°C 10000 1000 Switching time : ton, tr, toff, tf [ nsec ] Switching time : ton, tr, toff, tf [ nsec ] 10000 toff ton tr 100 tf ton 1000 toff tr 100 tf 10 10 0 50 100 150 0 200 Collector current : Ic [ A ] [ Inverter ] Switching time vs. Gate resistance (typ.) Vcc=300V, Ic=100A, VGE=±15V, Tj= 25°C 150 200 Vcc=300V, VGE=±15V, Rg=33Ω 10 1000 Switching loss : Eon, Eoff, Err [ mJ/pulse ] Switching time : ton, tr, toff, tf [ nsec ] 100 [ Inverter ] Switching loss vs. Collector current (typ.) 10000 tr toff ton tf 100 8 Eon(125°C) Eoff(125°C) 6 Eon(25°C) 4 Eoff(25°C) 2 Err(125°C) Err(25° 10 0 10 100 1000 0 50 100 150 200 Collector current : Ic [ A ] Gate resistance : Rg [ Ω ] [ Inverter ] Switching loss vs. Gate resistance (typ.) Vcc=300V, Ic=100A, VGE=±15V, Tj= 125°C [ Inverter ] Reverse bias safe operating area (max.) +VGE=15V,-VGE <= 15V, RG >= 33Ω ,Tj <= 125°C 15 250 Eon Collector current : Ic [ A ] Switching loss : Eon, Eoff, Err [ mJ/pulse ] 50 Collector current : Ic [ A ] 10 Eoff 5 200 150 100 50 Err 0 0 10 100 Gate resistance : Rg [ Ω ] 1000 0 200 400 600 Collector - Emitter voltage : VCE [ V ] 800 IGBT Module 7MBR100U2B060 Forward current vs. Forward on voltage (ty p.) Reverse recovery characteristics (ty p.) chip Vcc=300V, VGE=±15V, Rg=33Ω 1000 250 Forward current : IF [ A ] T j=125°C Reverse recovery current : Irr [ A ] Reverse recovery time : trr [ nsec ] T j=25°C 200 150 100 50 Irr (125°C) Irr (25°C) 100 trr (125°C) trr (25°C) 10 0 0.0 0.5 1.0 1.5 2.0 2.5 0 3.0 50 Forward on volt age : VF [ V ] 100 150 200 Forward current : IF [ A ] [ Converter ] Forward current vs. Forward on voltage (ty p.) chip 250 Forward current : IF [ A ] 200 150 100 T j=125°C T j=25°C 50 0 0.0 0.5 1.0 1.5 2.0 Forward on volt age : VFM [ V ] [ Thermistor ] Temp erature characteristic (ty p.) Transient thermal resistance (max.) 100 1.000 FWD[Inverter], IGBT[Brake] IGBT[Inverter] Conv.Diode 0.100 0.010 0.001 Resistance : R [ kΩ ] Thermal resistanse : Rth(j-c) [ °C/W ] 10.000 10 1 0.1 0.010 0.100 Pulse width : Pw [ sec ] 1.000 -60 -40 -20 0 20 40 60 80 100 T emperat ure [°C ] 120 140 160 180 7MBR100U2B060 IGBT Module [ Brake ] [ Brake ] Collector current vs. Collector-Emitter voltage (typ.) Tj= 25°C / chip Collector current vs. Collector-Emitter voltage (typ.) Tj= 125°C / chip 120 120 VGE=20V 15V 12V VGE=20V 15V 100 Collector current : Ic [A] Collector current : Ic [A] 100 80 10V 60 40 12V 80 10V 60 40 20 20 8V 8V 0 0 0 1 2 3 4 0 5 1 Collector-Emitter voltage : VCE [V] [ Brake ] 4 5 Collector-Emitter voltage vs. Gate-Emitter voltage (typ.) Tj=25°C / chip 10 Collector - Emitter voltage : VCE [ V ] 120 100 Tj=25°C 80 Tj=125°C 60 40 20 8 6 4 Ic=100A Ic= 50A Ic= 25A 2 0 0 1 2 3 5 4 10 15 25 Gate - Emitter voltage : VGE [ V ] Collector-Emitter voltage : VCE [V] [ Brake ] [ Brake ] Capacitance vs. Collector-Emitter voltage (typ.) VGE=0V, f= 1MHz, Tj= 25°C Dynamic Gate charge (typ.) Vcc=300V, Ic=50A, Tj= 25°C 10.00 Collector-Emitter voltage : VCE [ V ] Cies 1.00 20 Coes Cres 0.10 500 25 400 20 15 300 VGE 200 10 100 5 VCE 0 0 0.01 0 10 20 Collector-Emitter voltage : VCE [V] 30 0 50 100 150 200 Gate charge : Qg [ nC ] 250 Gate - Emitter voltage : VGE [ V ] 0 Capacitance : Cies, Coes, Cres [ nF ] 3 [ Brake ] Collector current vs. Collector-Emitter voltage (typ.) VGE=15V / chip Collector current : Ic [A] 2 Collector-Emitter voltage : VCE [V] IGBT Module Outline Drawings, mm 7MBR100U2B060