PR EL IM INA RY EB-CCD TV SCAN RATE TYPE : N7640 SLOW SCAN TYPE : N7220 For Low-Light-Level Imaging with high S/N ratio IMAGING COMPARISON Using Resolution Test Chart ■ Imaging Conditions Object illuminance: 0.1 lx Lens: FUJINON-TV Zoom Lens/H6x 12.5R :F1.2/f2 Commercial 2/3-inch CCD OVERVIEW EB-CCD N7640 SENSITIVITY COMPARISON (Calculated data) TAPPB0068EA 1000 SENSITIVITY (V. µJ-1. cm-2) The EB-CCD is an absolutely new high-sensitivity imaging device that employs the “Electron Bombardment (EB)” effect for image intensification. The EB-CCD basically consists of a photocathode and a CCD chip arranged in parallel in a vacuum tube. An optical image is converted at the photocathode into an electron image, which is then accelerated and directly bombards the CCD surface to produce electron multiplication. Even a low-light-level image can be brought into view with a high S/N ratio. Two types of EB-CCD are available depending on the readout method: the N7640 designed to operate at the TV scan rate and the N7220 for slow scan readout. Both types are compact and simple in structure, and deliver high sensitivity yet ensure high S/N ratio. The EB-CCD will open up new applications as the next generation of low-light-level imaging devices. EB-CCD N7640 100 NORMAL 2/3" CCD 10 1 200 300 400 500 600 700 800 WAVELENGTH (nm) 900 1000 1100 APPLICATIONS SPECTRAL RESPONSE ●High sensitivity video camera 102 • Semiconductor wafer inspection • Real time fluorescence observation • Biochemical emission imaging • Biophoton imaging CATHODE RADIANT SENSITIVITY (mA/W) QUANTUM EFFICIENCY (%) CATHODE SENSITIVITY FEATURES TV scan rate type ●Resolution ●Gain ●Detection limit *1 400 TV lines 700 0.3 mlx Slow scan type ●Resolution ●Gain ●Detection limit TII B0020EA 450 TV lines 1300 Detectable down to single photon region 101 QUANTUM EFFICIENCY 100 10-1 10-2 100 200 300 400 500 600 700 800 900 1000 WAVELENGTH (nm) *1: Minimum illuminance on the photocathode required to produce an image. SPECIFICATIONS ●EB-CCD Parameter Focusing Method Window Material Photocathode Maximum Supply Voltage Gain (Typ.)*2 Limiting Resolution (Typ.) Effective Area (H✕V) Casing Material Lead Wire Sheath Dimension *2: N7640 at -6 kV, N7220 at -8 kV N7640 N7220 Proximity-focused Synthetic silica Multialkali -6 700 400 9.2 ✕ 6.8 -8 1300 450 12.2 ✕ 12.2 Poly Oxy Methylene (POM) Teflon φ53 ✕ 16.5 (excluding lead pins) Unit kV TV lines mm mm ●Internal CCD Parameter Drive Method CCD Format Pixel Size Number of Effective Pixels (H✕V) Saturation Charge Dark Current Readout Noise*5 CCD Readout Frequency Vertical Clock Horizontal Clock Output N7640 Frame transfer 2/3 inch format 14 ✕ 14 658 ✕ 490 65 ✕103 *3 80 e- / (pixel·frame) 100 14 2 phases 2 phases MOSFET source follower, two stages with load *3: At 25 °C, MPP (Multi-Pinned Phase) operation, 33 ms/frame *4: At 0 °C, MPP (Multi-Pinned Phase) operation N7220 Full frame transfer 1 inch format 24 ✕ 24 512 ✕ 512 200 ✕103 *4 300 e- / (pixel·s) 50 1 2 phases 2 phases Unit mm electrons e- RMS MHz - MOSFET source follower, one stage - *5: N7640 at 12 MHz, N7220 at 150 kHz ●Ratings Parameter Operating Temperature Range Storage Temperature Range Min. -30 -40 Max. +40 +40 Unit °C °C PHOTON COUNTING IMAGING EXAMPLE Slow Scan Type N7220 Exposure Time: 0.02 s Exposure Time: 20 s Object Illuminance 0.00002 lx ●Conditions Light source Tungsten lamp Object illuminance 2✕10-5 lx 5.6 Lens F value Supply voltage -8 kV Ambient temperature -25 C (Resolution 450 TV lines) DIMENSIONAL OUTLINES (Unit: mm) (Frame Transfer CCD) EFFECTIVE IMAGING AREA 9.2(H)✕6.8(V) MIN. 9.2 N7640 6.9 ± 0.1 15.2 ± 0.2 3.57 29 19 +0 6.8 1.78 ± 0.15 PHOTOCATHODE (MULTIALKALI) 53 -0.3 TV Rate Type INDEX MARK CABLE LENGTH 200 MIN. INPUT WINDOW (SYNTHETIC SILICA) RED BLACK 0.5 ± 0.2 2.0 ± 0.3 Input Side 16.5 ± 0.3 Output Side 5 ± 0.3 LEAD (TEFLON COVER) RED : PHOTOCATHODE (–HV) BLACK : OUTER FLANGE (GND) (Full Frame Transfer CCD) 15.2±0.2 1.78×11 =19.6 +0 5.9±0.1 29 PHOTOCATHODE (MULTIALKALI) 53–0.3 EFFECTIVE IMAGING AREA 12.2✕12.2 MIN. N7220 19 Slow Scan Type TAPPA0037EA INDEX MARK INPUT WINDOW (SYNTHETIC SILICA) CABLE LENGTH 200 MIN. RED BLACK 0.5 ± 0.2 2±0.2 Input Side 16.5 ± 0.3 5 ± 0.3 Output Side LEAD (TEFLON COVER) RED : PHOTOCATHODE (–HV) BLACK : OUTER FLANGE (GND) TAPPA0034ED EB-CCD CAMERA C8080 The C8080 is an EB-CCD camera incorporating a TV scan type EB-CCD (N7640). The C8080 is designed for simple use and functions, yet capable of imaging at very low light levels. Hamamatsu also provides the C8081 power supply ideal for use with the C8080 EB-CCD camera. ●SPECIFICATIONS Specifications EB-CCD (N7640) Frame transfer CCD 185 to 900 200 to 700 8.58 ✕ 6.86 (2/3 inch format) 640 ✕ 480 14 ✕ 14 130 000 60 Hz interlace RS-170 (EIA) 0 to +40 -10 to +40 Below 90 (no condensation) +15 (500 mA), -15 (500 mA), +5 (500 mA) 90 ✕ 75 ✕ 160 Approx. 1.4 Parameter EB-CCD Image Sensor Spectral Response Gain Effective Area Number of Effective Pixels (H ✕ V) Pixel Size Saturation Charge Frame Rate Image Output Method Operating Temperature Range Storage Temperature Range Humidity Range Input Voltage (Input Current) Dimension (W ✕ H ✕ D) Weight Unit nm mm µm electrons °C °C % V mm kg ●DEDICATED POWER SUPPLY C8081 (Option) Unit V ac VA mm kg Specifications 85 to 135 (50 Hz, 60 Hz) 90 161 ✕ 44 ✕ 213 Approx. 1.2 Parameter Input Voltage Maximum Power Consumption Dimension (W ✕ H ✕ D) Weight DIMENSIONAL OUTLINES (Unit: mm) ● C8080 90 4.1 160 EB-CCD CAMERA 12 H.V. SWITCH GAIN CONTROL C8080 HV ON/OFF SENSITIVITY 75 MIN. POWER MAX. CONTROL 8 41 VIDEO 40 POWER INPUT (HIROSE HR10A-R13R-20SB) 40 4-M3, DEPTH: 8 66 VIDEO SIGNAL OUTPUT (BNC) 1/4-20 UNC, DEPTH: 8 32 C MOUNT DEPTH: 6 9 9 TAPPA0041EA Subject to local technical requirements and regulations, availability of products in this promotional material may vary. Please consult with our sales office. Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies and omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. © 2000 Hamamatsu Photonics K.K. HOMEPAGE URL http://www.hamamatsu.com HAMAMATSU PHOTONICS K.K., Electron Tube Center 314-5, Shimokanzo, Toyooka-village, Iwata-gun, Shizuoka-ken, 438-0193, Japan, Telephone: (81)539/62-5248, Fax: (81)539/62-2205 U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P. O. Box 6910, Bridgewater. N.J. 08807-0910, U.S.A., Telephone: (1)908-231-0960, Fax: (1)908-231-1218 E-mail: [email protected] Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49)8152-375-0, Fax: (49)8152-2658 E-mail: [email protected] France: Hamamatsu Photonics France S.A.R.L.: 8, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: (33)1 69 53 71 00, Fax: (33)1 69 53 71 10 E-mail: [email protected] United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road Welwyn Garden City Hertfordshire AL7 1BW, United Kingdom, Telephone: 44-(0)1707-294888, Fax: 44(0)1707-325777 E-mail: [email protected] North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171-41 SOLNA, Sweden, Telephone: (46)8-509-031-00, Fax: (46)8-509-031-01 E-mail: [email protected] TAPP1032E01 Italy: Hamamatsu Photonics Italia: S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39)02-935 81 733, Fax: (39)02-935 81 741 E-mail: [email protected] OCT. 2000 (9910) IP Printed in Japan (1000)