PHOTOMULTlPLlER TUBES R2693, R2693P Transmission Mode Low Noise Bialkali Photocathode 28mm (1-1/8 inch) Diameter, Side-on Type FEATURES Low Dark Current Low Dark Counts (R2693P) Wide Photocathode Excellent Spatial Uniformity Fast Time Response APPLICATIONS Fluorescence Detector Chemiluminescence Detector Raman Spectroscopy Emission Spectroscopy Light Scattering Detector GENERAL Parameter Description Unit Spectral Response Wavelength of Maximum Response 185 to 650 nm 375 nm Low noise bialkali 16(H) 18(W) mm Photocathode MateriaI Minimum Effective Area Figure 1: Electron Trajectories LIGHT Dynode Structure Number of Stages PHOTOCATHODE PHOTOELECTRONS UV glass Window Material GLASS BULB Circular-cage 9 Direct Interelectrode Capacitances Anode to Last Dynode Anode to All Other Electrodes 1.2 3.4 pF pF FOCUSING ELECTRODES 2nd DYNODE 11-pin base JEDEC No. B11-88 Base SuitabIe Socket E678–11A (option) Applicable Socket Assembly E717–21 (option) 1st DYNODE 3rd DYNODE TPMSC0003EB Figure 2: Typical Spatial Uniformity SPOTSIZE : 1mm DIA X SUPPLY VOLTAGE : 1000V WAVELENGTH : 400nm RELATIVE SENSITIVITY (%) Y 100 100 80 80 60 60 40 40 20 20 0 0 8 4 0 4 DISTANCE FROM CENTER OF PHOTOCATHODE (mm) 8 9 4.5 0 4.5 DISTANCE FROM CENTER OF PHOTOCATHODE (mm) RELATIVE SENSITIVITY (%) Y-Axis X-Axis 9 TPMSB0066EA Subject to local technical requirements and regulations, availability of products included in this promotional material may vary. Please consult with our sales office. Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. © 1993 Hamamatsu Photonics K.K. PHOTOMULTlPLlER TUBES R2693, R2693P MAXIMUM RATINGS (Absolute Maximum Values) Parameter Between Anode and Cathode Between Anode and Last Dynode Supply Voltage Average Anode Current Ambient Temperature A CHARACTERISTlCS (at 25 ) Parameter Cathode Sensitivity Quantum Efficiency at 375nm Luminous B Radiant at 375nm (Peak) Blue C Anode Sensitivity Luminous D Radiant at 375nm Anode Pulse Rise Time Electron Transit Time Time Response Anode Current Stability 0.1 –80 to +50 mA 20.5 50 20.5 50 30 100 30 62 7.0 300 3.7 105 6 106 8.6 G H J Current Hysteresis Voltage Hysteresis Unit % A/lm mA/W A/lm-b A/lm A/W 62 7.0 300 3.7 105 6 106 100 0.5 Transit Time Spread (FWHM) K Vdc Vdc R2693P for Photon Counting Min. Typ. Max. Anode Dark Current E (After 30min. storage in darkness) Anode Dark Counts E ENI(Equivalent Noise Input) F D Unit 1250 250 R2693 for General Purpose Min. Typ. Max. D Gain Value 5.0 10-17 1.2 18 1.0 3.9 0.5 1.0 0.1 2.0 nA 15 50 cps 10-17 1.2 18 1.0 W ns ns ns 0.5 1.0 % % NOTES A: Averaged over any interval of 30 seconds maximum. B: The light source is a tungsten filament lamp operated at a distribution temperature of 2856K. Supply voltage is 100 volts between the cathode and all other electrodes connected together as anode. C: The value is cathode output current when a blue filter(Corning CS-5-58 polished to 1/2 stock thickness) is interposed between the light source and the tube under the same condition as Note B. D: Measured with the same light source as Note B and with the voltage distribution ratio shown in Table 1 below. Table 1:Voltage Distribution Ratio Electrodes Ratio R2693P Electrodes Ratio K Dy1 Dy2 Dy3 • • • • Dy9 P 1 1 1 ••••••••1 1 E: Measured with the same supply voltage and voltage distribution ratio as Note D after removal of light. F: ENI is an indication of the photon-limited signal-to-noise ratio. It refers to the amount of light in watts to produce a signal-to-noise ratio of unity in the output of a photomultiplier tube. 2q.ldb.G. f S where q = Electronic charge (1.60 10-19 coulomb). ldb = Anode dark current(after 30 minutes storage) in amperes. G = Gain. f = Bandwidth of the system in hertz. 1 hertz is used. S = Anode radiant sensitivity in amperes per watt at the wavelength of peak response. lmin. 100(%) li K Dy1 Dy2 Dy3 • • • • Dy9 P 2.5 1.5 1 • • • • • • • • 1 1 SuppIy Voltage : 1000Vdc, K : Cathode,Dy : Dynode, P : Anode ENI = lmax. Hysteresis = ANODE CURRENT R2693 G:The rise time is the time for the output pulse to rise from 10% to 90% of the peak amplitude when the entire photocathode is illuminated by a delta function light pulse. H: The electron transit time is the interval between the arrival of delta function light pulse at the entrance window of the tube and the time when the anode output reaches the peak amplitube. In measurement, the whole photocathode is illuminated. J: Also called transit time jitter. This is the fluctuation in electron transit time between individual pulses in the single photoelectron mode, and may be defined as the FWHM of the frequency distribution of electron transit times. K: Hysteresis is temporary instability in anode current after light and voltage are applied. l max. li l min. TIME 0 5 6 7 (minutes) TPMSB0002EA (1)Current Hysteresis The tube is operated at 750 volts with an anode current of 1 microampere for 5 minutes. The light is then removed from the tube for a minute. The tube is then re-illuminated by the previous light level for a minute to measure the variation. (2)Voltage Hysteresis The tube is operated at 300 volts with an anode current of 0.1 micro -ampere for 5 minutes. The light is then removed from the tube and the supply voltage is quickly increased to 800 volts. After a minute, the supply voltage is then reduced to the previous value and the tube is re-illuminated for a minute to measure the variation. Figure 3: Typical Spectral Response Figure 4: Typical Time Response TPMSB0060EA 100 CATHODE RADIANT SENSITIVITY 100 80 60 10 40 QUANTUM EFFICIENCY TRAN SIT TIM TIME (ns) CATHODE RADIANT SENSITIVITY (mA/W) QUANTUM EFFICIENCY (%) TPMSB0061EA 200 1 E 20 10 8 6 4 0.1 2 RISE 1 0.01 200 400 300 800 600 500 700 1000 1500 SUPPLY VOLTAGE (V) WAVELENGTH (nm) Figure 5: Typical Gain and Anode Dark Current (R2693) TPMSB0062EA Figure 6: Typical Single Photoelectron Pulse Height Distribution (R2693P) 10–5 10–6 10–7 N AI G 10–8 EN T GAIN 105 10–9 AR K C U R R 104 10–10 0.8 + SIGNAL DARK 0.6 WAVELENGTH OF INCIDENT LIGHT : 400nm SUPPLY VOLTAGE : 1000vdc SIGNAL+DARK COUNTS : 5364cps DARK COUNTS : 15cps AMBIENT TEMPERATURE : +25 0.4 0.2 AN O D E D 103 COUNTS PER CHANNEL 106 FULL SCALE(SIGNAL+DARK):1 10 4 FULL SCALE(DARK) :1 10 3 107 TPMSB0063EA 1.0 ANODE DARK CURRENT(A) 108 TIME DARK 102 10–11 0 0 101 300 400 500 600 800 1000 200 400 600 800 1000 CHANNEL NUMBER(ch) 10–12 1300 DISCRIMINATION LEVEL SUPPLY VOLTAGE(V) Figure 7: Typical Temperature Coefficient of Anode Sensitivity +1.2 TPMSB0064EA Figure 8: Typical Temperature Characteristics of Dark Current(R2693) (at 1000V, after 30minutes storage) TPMSB0065EA 100 10 ANODE DARK CURRENT (nA) TEMPERATURE COEFFICIENT(%/ ) +0.8 +0.4 0 –0.4 1 0.1 –0.8 –1.2 200 300 400 500 WAVELENGTH (nm) 600 700 0.01 0 20 40 60 TEMPERATURE (°C) 80 100 PHOTOMULTlPLlER TUBES R2693, R2693P Figure 9: Dimensional Outline and Basing Diagram (Unit: mm) 29.0 1.7 18MIN. 76MAX. 90MAX. DY5 49.0 2.5 16MIN. PHOTOCATHODE 5 DY6 6 7 DY4 4 DY7 8 DY8 DY3 3 DY2 9 DY9 2 10 P 1 11 K DY1 DIRECTION OF LIGHT 34MAX. HA COATING BOTTOM VIEW (BASING DIAGRAM) 11 PIN BASE JEDEC No. B11-88 TPMSA0007EA Figure 10: Optional Accessories (Unit: mm) Socket E678-11A D Type Socket Assembly E717-21 49 PMT 3.5 33.0 0.3 5 38 SOCKET PIN No. 10 P DY9 DY8 3.5 41.0 0.5 C2 R8 C1 8 7 R7 4.8 33 5 DY7 29 C3 R9 9 38.0 0.3 49.0 0.3 R10 SIGNAL GND SIGNAL OUTPUT RG-174/U (BLACK) POWER SUPPLY GND AWG22 (BLACK) DY6 6 DY5 5 DY4 4 DY3 3 DY2 2 DY1 K 1 R6 R to R10 : 330k C1 to C3 : 0.01 F R5 31.0 0.5 HOUSING (INSULATOR) R4 450 10 R3 18 4 29 POTTING COMPOUND R2 R1 11 –HV AWG22 (VIOLET) R1 to R10 : 330k C1 to C3 : 0.01 F TACCA0002ED TACCA0008EB Hamamatsu also provides C4900 series compact high voltage power supplies and C6270 series DP type socket assemblies which incorporate a DC to DC converter type high voltage power supply. Warning–Personal Safety Hazards Electrical Shock–Operating voltages applied to this device present a shock hazard. HAMAMATSU PHOTONICS K.K., Electoron Tube Center 314-5, Shimokanzo, Toyooka-village, Iwata-gun, Shizuoka-ken, 438-0193, Japan, Telephone: (81)539/62-5248, Fax: (81)539/62-2205 U.S.A.: Hamamatsu Corporation: 360 Foothill Road, Bridgewater. N.J. 08807-0910, U.S.A., Telephone: (1)908-231-0960, Fax: (1)908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49)8152-375-0, Fax: (49)8152-2658 France: Hamamatsu Photonics France S.A.R.L.: 8, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: (33)1 69 53 71 00, Fax: (33)1 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limted: Lough Point, 2 Gladbeck Way, Windmill Hill, Enfield, Middlesex EN2 7JA, United Kingdom, Telephone: (44)181-367-3560, Fax: (44)181-367-6384 North Europe: Hamamatsu Photonics Norden AB: Färögatan 7, S-164-40 Kista Sweden, Telephone: (46)8-703-29-50, Fax: (46)8-750-58-95 Italy: Hamamatsu Photonics Italia: S.R.L.: Via Della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39)2-935 81 733, Fax: (39)2-935 81 741 TPMS1014E01 MAR. 1993