HAMAMATSU R7154

PHOTOMULTIPLIER TUBE
R7154
High Sensitivity Solar Blind Photocathode (160 to 320 nm)
28mm (1-1/8 Inch) Diameter, 9-Stage, Side-On Type
FEATURES
Spectral Response ........................... 160 to 320 nm
Cathode Sensitivity
Radiant at 254 nm .......................... 62mA/W Typ.
Quantum Efficiency at 254 nm ..................... 30 %
Anode Sensitivity (at 1000V)
Radiant at 254 nm ................... 6.2 × 105A/W Typ.
APPLICATIONS
Emission Spectroscopy
UV Spectrophotometer
TPMSF0073
GENERAL
Figure 1: Typical Spectral Response
Parameter
Description/Value
Unit
Spectral Response
Wavelength of Maximum Response
Photocathode
Material
Minimum Effective Area
Window Material
Dynode
Secondary Emitting Surface
Structure
Number of Stages
Direct Interelectrode Capacitances
Anode to Last Dynode
Anode to All Other Electrodes
Base
160 to 320
254
nm
nm
Cs-Te
8 × 24
Quartz
—
mm
—
Sb-Cs
Circular-cage
9
—
—
—
4
6
11-pin base
JEDEC No.B11-88
45
E678-11A(option)
E717-21(option)
pF
pF
TPMSB0128EA
g
—
—
CATHODE RADIANT SENSITIVITY (mA/W)
QUANTUM EFFICIENCY (%)
Weight
Suitable Socket
Suitable Socket Assembly
100
CATHODE RADIANT
SENSITIVITY
10
1
QUANTUM
EFFICIENCY
0.1
0.01
100
200
300
400
500
WAVELENGTH (nm)
Subject to local technical requirements and regulations, availability of products included in this promotional material may vary. Please consult with our sales office.
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are
subject to change without notice. No patent rights are granted to any of the circuits described herein. ©1997 Hamamatsu Photonics K.K
PHOTOMULTIPLIER TUBE R7154
MAXIMUM RATINGS (Absolute Maximum Values)
Rating
Unit
Between Anode and Cathode
1250
Vdc
Between Anode and Last Dynode
Average Anode CurrentA
250
0.1
Vdc
mA
-80 to +50
°C
Parameter
Supply Voltage
Ambient Temperature
CHARACTERISTICS (at 25°C)
Parameter
Min.
Typ.
Max.
—
—
30
62
—
—
%
mA/W
1.0 × 105 6.2 × 105
—
A/W
—
1.0 × 107
—
—
—
1
10
nA
W
Unit
Cathode sensitivity
Quantum Efficiency at 254 nm
Radiant at 254nm
Anode Sensitivity
Radiant at 254nm
Gain
F
Anode Dark Current (After 30 minutes storage in the darkness)
G
—
9.1 × 10-17
—
Time Response
Anode Pulse Rise TimeH
Electron Transit TimeI
Transit Time Spread (TTS)J
—
—
—
2.2
22
1.2
—
—
—
ns
ns
ns
Anode Current StabilityK
Light Hysteresis
Voltage Hysteresis
—
—
0.1
1.0
—
—
%
%
ENI (Equivalent Noise Input)
E
NOTES
A: Averaged over any interval of 30 seconds maximum.
B: The light source is a tungsten filament lamp operated at a distribution
temperature of 2856K. Supply voltage is 100 volts between the cathode and all other electrodes connected together as anode.
C: Red/White ratio is the quotient of the cathode current measured using a red filter(Toshiba R-68) interposed between the light source
and the tube by the cathode current measured with the filter removed
under the same conditions as Note B.
D: The value is cathode output current when a blue filter(Corning CS-558 polished to 1/2 stock thickness) is interposed between the light
source and the tube under the same condition as Note B.
E: Measured with the same light source as Note B and with the voltage
distribution ratio shown in Table 1 below.
Table 1: Voltage Distribution Ratio
Electrode
K Dy1 Dy2 Dy3 Dy4 Dy5 Dy6 Dy7 Dy8 Dy9 P
Distribution
1 1
Ratio
Supply Voltage=1000Vdc
K:Cathode Dy:Dynode
1
1
P:Anode
1
1
1
1
1
1
F: Measured with the same supply voltage and voltage distribution ratio
as Note E after removal of light.
G: ENI is an indication of the photon-limited signal-to-noise ratio. It refers to the amount of light in watts to produce a signal-to-noise ratio
of unity in the output of a photomultiplier tube.
2q·ldb·G·∆f
S
where
q = Electronic charge (1.60 × 10-19 coulomb).
ldb = Anode dark current(after 30 minutes storage) in amperes.
G = Gain.
∆f = Bandwidth of the system in hertz. 1 hertz is used.
S = Anode radiant sensitivity in amperes per watt at the
wavelength of peak response.
H: The rise time is the time for the output pulse to rise from 10% to 90%
of the peak amplitude when the entire photocathode is illuminated by
a delta function light pulse.
ENI =
I: The electron transit time is the interval between the arrival of delta
function light pulse at the entrance window of the tube and the time
when the anode output reaches the peak amplitude. In measurement, the whole photocathode is illuminated.
J: Also called transit time jitter. This is the fluctuation in electron transit
time between individual pulses in the signal photoelectron mode, and
may be defined as the FWHM of the frequency distribution of electron transit times.
ANODE
CURRENT
K: Hysteresis is temporary instability in anode current after light and
voltage are applied.
l max.
li
l min.
Hysteresis =
l max — l min.
× 100(%)
li
(1) Light Hysteresis
The tube is operated at 750 volts with an anode current of 1 micro-ampere for 5 minutes. The light is then removed from the tube for a minute.
The tube is then re-illuminated by the previous light level for a minute to
measure the variation.
(2) Voltage Hysteresis
The tube is operated at 300 volts with an anode current of 0.1 microampere for 5 minutes. The light is then removed from the tube and the
supply voltage is quickly increased to 800 volts. After a minute, the supply voltage is then reduced to the previous value and the tube is reilluminated for a minute to measure the variation.
TIME
5
0
6
7 (minutes)
TPMSB0002EA
Figure 2: Typical Gain and Anode Radiant Sensitivity
108
Figure 3: Typical Time Response
TPMSB0129EA
TPMSB0004EB
108
100
80
60
107
107
40
TRAN
SIT T
106
106
105
TYPICAL ANODE
SENSITIVITY
TIME (ns)
105
IME
20
GAIN
ANODE RADIANT SENSITIVITY (A/IW)
TYPICAL CURRENT
AMPLIFICATION
10
8
6
104
MINIMUM ANODE
SENSITIVITY
103
102
500
104
4
103
700
1000
SUPPLY VOLTAGE (V)
102
1500
RISE
TIME
2
1
300
500
700
1000
SUPPLY VOLTAGE (V)
1500
PHOTOMULTIPLIER TUBE R7154
Unit: mm
Figure 6: Dimensional Outline and Basing Diagram
Figure 7: Socket E678-11A (Option)
49
28.5 ± 1.5
38
8MIN.
5
DY6
6
7 DY7
8 DY8
DY3 3
94MAX.
80MAX.
9 DY9
DY2 2
1
DY1
11
K
10
5
P
DIRECTION
OF LIGHT
29
4
49.0 ± 0.25
24MIN.
DY4 4
33
DY5
PHOTOCATHODE
3.5
T9 BULB
Bottom View
(Basing Diagram)
18
32.2 ± 0.5
11 PIN BASE
JEDEC No.B11-88
TPMSA0005EB
TACCA0064EA
Figure 8: D Type Socket Assembly E717-21 (Option)
PMT
3.5
33.0 ± 0.3
5
SOCKET
PIN No.
10
P
DY9
38.0 ± 0.3
49.0 ± 0.3
R10
C3
R9
C2
R8
C1
SIGNAL GND
SIGNAL OUTPUT
RG-174/U (BLACK)
POWER SUPPLY GND
AWG22 (BLACK)
9
DY8
8
DY7
7
R7
DY6
6
DY5
5
DY4
4
DY3
3
HOUSING
(INSULATOR)
DY2
2
POTTING
COMPOUND
DY1
K
1
4
29
R6 R to R10 : 330kW
C1 to C3 : 0.01mF
R5
450 ± 10
L
R4
31.0 ± 0.5
R3
R2
R1
11
Type No.
L
E717-21 41 ± 0.5
E717-63 30 ± 0.5
-HV
AWG22 (VIOLET)
TACCA0002EC
* Hamamatsu also provides compact high voltage power supplies and C956 series DP type socket assemblies which incorporate a DC to DC converter type
high voltage power supply.
Warning—Personal Safety Hazards
Electrical Shock—Operating voltages applies to this
device present a shock hazard.
HAMAMATSU PHOTONICS K.K., Electoron Tube Center
314-5, Shimokanzo, Toyooka-village, Iwata-gun, Shizuoka-ken, 438-0193, Japan, Telephone: (81)539/62-5248, Fax: (81)539/62-2205
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, Bridgewater. N.J. 08807-0910, U.S.A., Telephone: (1)908-231-0960, Fax: (1)908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49)8152-375-0, Fax: (49)8152-2658
France: Hamamatsu Photonics France S.A.R.L.: 8, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: (33)1 69 53 71 00, Fax: (33)1 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limted: Lough Point, 2 Gladbeck Way, Windmill Hill, Enfield, Middlesex EN2 7JA, United Kingdom, Telephone: (44)181-367-3560, Fax: (44)181-367-6384
North Europe: Hamamatsu Photonics Norden AB: Färögatan 7, S-164-40 Kista Sweden, Telephone: (46)8-703-29-50, Fax: (46)8-750-58-95
Cat. No. TPMS1036E01
Italy: Hamamatsu Photonics Italia: S.R.L.: Via Della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39)2-935 81 733, Fax: (39)2-935 81 741
SEPT. 1997 T
Printed in Japan (1,000)